MAGX-002731-030L00
GaN HEMT Pulsed Power Transistor
2.7 - 3.1 GHz, 30W Peak, 500us Pulse, 10% Duty Cycle
Production V1
23 Aug 11
Features
GaN depletion mode HEMT microwave transistor
Common source configuration
Broadband Class AB operation
Thermally enhanced Cu/Mo/Cu package
RoHS Compliant
+50V Typical Operation
MTTF of 114 years (Channel Temperature < 200°C)
Application
Civilian and Military Pulsed Radar
Product Description
The MAGX-002731-030L00 is a gold metalized matched
Gallium Nitride (GaN) on Silicon Carbide RF power transistor
optimized for civilian and military radar pulsed applications
between 2700 - 3100 MHz. Using state of the art wafer
fabrication processes, these high performance transistors
provide high gain, efficiency, bandwidth, ruggedness over a
wide bandwidth for today’s demanding application needs. The
MAGX-002731-030L00 is constructed using a thermally
enhanced Cu/Mo/Cu flanged ceramic package which provides
excellent thermal performance. High breakdown voltages allow
for reliable and stable operation in extreme mismatched load
conditions unparalleled with older semiconductor technologies.
Typical RF Performance
Pin
Pout Gain Id-Pk
(W
(A)
Peak) (dB)
Freq
(MHz)
(W
Peak)
Eff
(%)
2700
3
46
11.8
1.7
56
2900
3
43
11.6
1.6
53
3100
3
41
11.2
1.5
56
Typical RF performance measured in M/A-COM RF test fixture.
Devices tested in common source Class-AB configuration as
follows: Vdd=50V, Idq=250mA (pulsed), F=2.7—3.1 GHz,
Pulse=500us, Duty=10%.
Ordering Information
MAGX-002731-030L00
MAGX-002731-SB1PPR
30W GaN Power Transistor
Evaluation Fixture
1
ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology
Solutions is considering for development. Performance is based on target specifications, simulated results, and/or prototype measurements. Commitment to develop is not guaranteed.
PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology
Solutions has under development. Performance is based on engineering tests. Specifications are
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. Commitment to produce in volume is not guaranteed.
• North America Tel: 800.366.2266 / Fax: 978.366.2266
• Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300
• Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Visit www.macomtech.com for additional data sheets and product information.
M/A-COM Technology Solutions and its affiliates reserve the right to make changes to the
product(s) or information contained herein without notice.
MAGX-002731-030L00
GaN HEMT Pulsed Power Transistor
2.7 - 3.1 GHz, 30W Peak, 500us Pulse, 10% Duty Cycle
Production V1
23 Aug 11
Absolute Maximum Ratings Table (1, 2, 3)
Supply Voltage (Vdd)
Supply Voltage (Vgg)
+65V
-8 to 0V
Supply Current (Id1)
Input Power (Pin)
3000 mA
+30 dBm
Absolute Max. Junction/Channel Temp
Continuous Power Dissipation (Pdiss) at 85 ºC
200 ºC
27 W
Pulsed Power Dissipation (Pavg) at 85 ºC
65 W
MTTF (TJ250 V
MSL Level
MSL1
(1) Operation of this device above any one of these parameters may cause permanent damage.
(2) Channel temperature directly affects a device's MTTF. Channel temperature should be kept as low as
possible to maximize lifetime.
(3) For saturated performance it recommended that the sum of (3*Vdd + abs(Vgg))
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