MAGX-002731-100L00

MAGX-002731-100L00 GaN HEMT Pulsed Power Transistor 2.7 - 3.1 GHz, 100W Peak, 500us Pulse, 10% Duty Cycle Production V1 23 Aug 11 Features        GaN depletion mode HEMT microwave transistor Common source configuration Broadband Class AB operation Thermally enhanced Cu/Mo/Cu package RoHS Compliant +50V Typical Operation MTTF of 114 years (Channel Temperature < 200°C) Application  Civilian and Military Pulsed Radar Product Description The MAGX-002731-100L00 is a gold metalized matched Gallium Nitride (GaN) on Silicon Carbide RF power transistor optimized for civilian and military radar pulsed applications between 2700 - 3100 MHz. Using state of the art wafer fabrication processes, these high performance transistors provide high gain, efficiency, bandwidth, ruggedness over a wide bandwidth for today’s demanding application needs. The MAGX-002731-100L00 is constructed using a thermally enhanced Cu/Mo/Cu flanged ceramic package which provides excellent thermal performance. High breakdown voltages allow for reliable and stable operation in extreme mismatched load conditions unparalleled with older semiconductor technologies. Typical RF Performance Freq. (MHz) Pin Pout (W (W Peak) Gain (dB) Id-Pk (A) Eff (%) 2700 7 109 12 4.2 51 2900 7 112 12 4.4 51 3100 7 109 12 4.2 52 Typical RF performance measured in M/A-COM RF test fixture. Devices tested in common source Class-AB configuration as follows: Vdd=50V, Idq=500mA (pulsed), F=2.7—3.1 GHz, Pulse=500us, Duty=10%. Ordering Information MAGX-002731-100L00 MAGX-002731-SB2PPR 100W GaN Power Transistor Evaluation Fixture 1 ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions is considering for development. Performance is based on target specifications, simulated results, and/or prototype measurements. Commitment to develop is not guaranteed. PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. Commitment to produce in volume is not guaranteed. • North America Tel: 800.366.2266 / Fax: 978.366.2266 • Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 • Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 Visit www.macomtech.com for additional data sheets and product information. M/A-COM Technology Solutions and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. MAGX-002731-100L00 GaN HEMT Pulsed Power Transistor 2.7 - 3.1 GHz, 100W Peak, 500us Pulse, 10% Duty Cycle Production V1 23 Aug 11 Absolute Maximum Ratings Table (1, 2, 3) Supply Voltage (Vdd) Supply Voltage (Vgg) +65V -8 to 0V Supply Current (Id1) Input Power (Pin) 7100 mA Pk +34 dBm Absolute Max. Junction/Channel Temp Pulsed Power Dissipation (Pavg) at 85 ºC 200 ºC 128W Thermal Resistance, (Tchannel = 200 ºC) 0.9 ºC/W VDD = 50V, IDQ = 500mA, Pout = 100W Peak (300us Pulse / 10% Duty) Operating Temp -40 to +95C Storage Temp Mounting Temperature -65 to +150C See solder reflow profile ESD Min. - Machine Model (MM) ESD Min. - Human Body Model (HBM) 50 V >250 V MSL Level MSL1 (1) Operation of this device above any one of these parameters may cause permanent damage. (2) Channel temperature directly affects a device's MTTF. Channel temperature should be kept as low as possible to maximize lifetime. (3) For saturated performance it recommended that the sum of (3*Vdd + abs(Vgg))