MAGX-002731-180L00

MAGX-002731-180L0x GaN on SiC HEMT Pulsed Power Transistor 180 W Peak, 2700 to 3100 MHz, 300 μs Pulse, 10% Duty Features         Rev. V6 MAGX-002731-180L00 GaN Depletion Mode HEMT Microwave Transistor Common Source Configuration Broadband Class AB Operation Thermally Enhanced Cu/Mo/Cu Package RoHS Compliant +50 V Typical Operation MTTF of 600 Years (TJ < 200ºC) EAR99 Export Classification Applications  Civilian and Military Pulsed Radar Description The MAGX-002731-180L00 and MAGX-002731180L0S are gold metalized matched Gallium Nitride (GaN) on Silicon Carbide RF power transistors optimized for civilian and military radar pulsed applications between 2700 - 3100 MHz. MAGX-002731-180L0S Using state of the art wafer fabrication processes, these high performance transistors provide high gain, efficiency, bandwidth, ruggedness over a wide bandwidth for today’s demanding application needs. The MAGX-002731-180L00 and MAGX-002731180L0S are constructed using thermally enhanced Cu/Mo/Cu flanged ceramic packages which provide excellent thermal performance. High breakdown voltages allow for reliable and stable operation in extreme mismatched load conditions unparalleled with older semiconductor technologies. Ordering Information1 Part Number Package MAGX-002731-180L00 Standard Flange MAGX-002731-180L0S Earless Flange MAGX-S32731-180L00 2700 – 3100 MHz Evaluation Board 1. When ordering the evaluation board, please indicate on sales order notes if it will be used for: A. Standard Flange devices B. Earless Flange devices 1 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: https://www.macom.com/support MAGX-002731-180L0x GaN on SiC HEMT Pulsed Power Transistor 180 W Peak, 2700 to 3100 MHz, 300 μs Pulse, 10% Duty Rev. V6 Electrical Specifications2: 2700 - 3100 MHz, TA = 25°C Parameter Test Conditions Symbol Min. Typ. Max. Units RF Functional Tests: VDD = 50 V, IDQ = 500 mA, 300 µs Pulse, 10% Duty Cycle Output Power PIN = 14 Wpk POUT 180 215 - Wpk Gain PIN = 14 Wpk GP 11.1 11.8 - dB Drain Efficiency PIN = 14 Wpk ηD 43 51 - % Load Mismatch Stability PIN = 14 Wpk VSWR-S - 5:1 - - Load Mismatch Tolerance PIN = 14 Wpk VSWR-T - 10:1 - - 2. Typical RF performance measured in an RF evaluation board. Electrical Characteristics: TA = 25°C Parameter Test Conditions Symbol Min. Typ. Max. Units IDS - - 12 mA DC Characteristics Drain-Source Leakage Current VGS = -8 V, VDS = 175 V Gate Threshold Voltage VDS = 5 V, ID = 30 mA VGS (TH) -5 -3 -2 V Forward Transconductance VDS = 5 V, ID = 3.5 mA GM 5 - - S Input Capacitance N/A - Input Internally Matched CISS N/A N/A N/A pF Output Capacitance VDS = 50 V, VGS = -8 V, F = 1 MHz COSS - 26.1 30.3 pF Reverse Transfer Capacitance VDS = 50 V, VGS = -8 V, F = 1 MHz CRSS - 2.3 4.7 pF Dynamic Characteristics 2 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: https://www.macom.com/support MAGX-002731-180L0x GaN on SiC HEMT Pulsed Power Transistor 180 W Peak, 2700 to 3100 MHz, 300 μs Pulse, 10% Duty Rev. V6 Absolute Maximum Ratings3,4,5 Parameter Absolute Maximum Drain Supply Voltage (VDD) +65 V Gate Supply Voltage (VGG) -8 V to 0 V Drain Supply Current (ID) 10 A 6 Input Power (PIN) PIN (nominal) + 3 dB Operating Junction Temperature 7 250ºC Peak Pulsed Power Dissipation @ 85°C 192 W Operating Temperature -40°C to +85°C Storage Temperature -65°C to +150°C ESD Min. - Charged Device Model (CDM) 350 V ESD Min. - Human Body Model (HBM) 550 V Maximum Solder Temperature 260°C 3. Exceeding any one or combination of these limits may cause permanent damage to this device. 4. MACOM does not recommend sustained operation near these survivability limits. 5. For saturated performance it is recommended that the sum of ( 3 * V DD + | VGG | ) < 175 V. 6. Input Power Limit is +3 dB over nominal drive required to achieve P OUT = 180 W. 7. Operating junction temperature is measured with infrared (IR) microscope. Junction temperature directly affects a device's MTTF and should be kept as low as possible to maximize lifetime.  MTTF = 5.3 x 106 hours (TJ < 200°C)  MTTF = 6.8 x 104 hours (TJ < 250°C) Thermal Characteristics Parameter Test Conditions Symbol Typical Units Thermal Resistance TC = 85ºC, VDD = 50 V, IDQ = 500 mA Pulse Width = 500 µs, Duty Cycle = 10% ΘJC 0.6 °C/W 3 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: https://www.macom.com/support MAGX-002731-180L0x GaN on SiC HEMT Pulsed Power Transistor 180 W Peak, 2700 to 3100 MHz, 300 μs Pulse, 10% Duty Rev. V6 Test Fixture Assembly Parts List Part Description C1, C2, C4 Capacitor, 12 pF, 250 V, 5%, ATC800A C3, C5 Capacitor, 0.1 µF, 100 V, 10%, X7R, 0805, TDK C6 Capacitor, 1.0 µF, 100 V, 5%, 1206, Murata C7 Capacitor, 22 µF, 100 V, 20%, Panasonic R1 Resistor, 12 ohm, 1/4 W, 1%, Axial, Vishay Dale J1, J2 SMA Connector J3, J6 Female Banana Jack, Black J4, J5 Female Banana Jack, Red PCB MACOM (Rogers RT6010.5LM, 0.25” thick, Er = 10.5) 4 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: https://www.macom.com/support MAGX-002731-180L0x GaN on SiC HEMT Pulsed Power Transistor 180 W Peak, 2700 to 3100 MHz, 300 μs Pulse, 10% Duty Rev. V6 Applications Section Typical Large-Signal Performance Curves 2700 - 3100 MHz, 300 µs Pulse, 10% Duty Cycle, VDD = 50 V, IDQ = 500 mA, PIN = 14 Wpk, TA = 25°C Output Power vs. Input Power Drain Efficiency vs. Output Power 55 275 50 Efficiency (%) POUT (Wpk) 225 175 125 2700 MHz 45 40 2700 MHz 35 2900 MHz 2900 MHz 75 3100 MHz 30 3100 MHz 25 25 2 4 6 8 10 12 14 16 18 20 PIN (Wpk) 40 60 80 100 120 140 160 180 200 POUT (Wpk) Gain vs. Output Power 15 Gain (dB) 14 13 2700 MHz 12 2900 MHz 3100 MHz 11 10 40 60 80 100 120 140 160 180 200 220 POUT (Wpk) 5 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: https://www.macom.com/support 220 MAGX-002731-180L0x GaN on SiC HEMT Pulsed Power Transistor 180 W Peak, 2700 to 3100 MHz, 300 μs Pulse, 10% Duty Rev. V6 Applications Section Typical Large-Signal Performance Curves 2700 - 3100 MHz, 500 µs Pulse, 10% Duty Cycle, VDD = 50 V, IDQ = 500 mA, PIN = 14 Wpk, TA = 25°C Output Power vs. Input Power Drain Efficiency vs. Output Power 275 55 50 Efficiency (%) POUT (Wpk) 225 175 125 2700 MHz 2900 MHz 75 45 40 2700 MHz 2900 MHz 3100 MHz 35 30 3100 MHz 25 25 2 4 6 8 10 12 14 16 18 20 160 180 200 220 PIN (Wpk) 40 60 80 100 120 140 160 180 200 POUT (Wpk) Gain vs. Output Power 15 Gain (dB) 14 13 2700 MHz 2900 MHz 3100 MHz 12 11 10 40 60 80 100 120 140 POUT (Wpk) 6 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: https://www.macom.com/support 220 MAGX-002731-180L0x GaN on SiC HEMT Pulsed Power Transistor 180 W Peak, 2700 to 3100 MHz, 300 μs Pulse, 10% Duty Rev. V6 Outline Drawing (Flanged) Bias Sequencing TURNING THE DEVICE ON TURNING THE DEVICE OFF 1. Set VGS to the pinch-off (VP), typically -5 V. 2. Turn on VDS to nominal voltage (50 V). 3. Increase VGS until the IDS current is reached . 4. Apply RF power to desired level. 1. Turn the RF power off. 2. Decrease VGS down to VP. 3. Decrease VDS down to 0 V. 4. Turn off VGS. 7 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: https://www.macom.com/support MAGX-002731-180L0x GaN on SiC HEMT Pulsed Power Transistor 180 W Peak, 2700 to 3100 MHz, 300 μs Pulse, 10% Duty Rev. V6 Outline Drawing (Flangeless) 8 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: https://www.macom.com/support MAGX-002731-180L0x GaN on SiC HEMT Pulsed Power Transistor 180 W Peak, 2700 to 3100 MHz, 300 μs Pulse, 10% Duty Rev. V6 M/A-COM Technology Solutions Inc. All rights reserved. Information in this document is provided in connection with M/A-COM Technology Solutions Inc ("MACOM") products. These materials are provided by MACOM as a service to its customers and may be used for informational purposes only. Except as provided in MACOM's Terms and Conditions of Sale for such products or in any separate agreement related to this document, MACOM assumes no liability whatsoever. MACOM assumes no responsibility for errors or omissions in these materials. MACOM may make changes to specifications and product descriptions at any time, without notice. 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