MAGX-003135-120L00

MAGX-003135-120L00 GaN on SiC HEMT Pulsed Power Transistor 120 W Peak, 3.1 to 3.5 GHz, 300 μs Pulse, 10% Duty Rev. V4 Features          GaN on SiC Depletion-Mode HEMT Transistor Common-Source Configuration Broadband Class AB Operation Thermally Enhanced Cu/Mo/Cu Package RoHS* Compliant +50 V Typical Operation MTTF = 600 Years (TJ < 200°C) 3A001.b.3.a.3 Export Classification MSL-1 Description The MAGX-003135-120L00 is a gold metalized matched Gallium Nitride (GaN) on Silicon Carbide RF power transistor optimized for civilian and military radar pulsed applications between 3.1 - 3.5 GHz. Using state of the art wafer fabrication processes, these high performance transistors provide high gain, efficiency, bandwidth, ruggedness over a wide bandwidth for today’s demanding application needs. The MAGX-003135-120L00 is constructed using a thermally enhanced Cu/Mo/Cu flanged ceramic package which provides excellent thermal performance. High breakdown voltages allow for reliable and stable operation in extreme mismatched load conditions unparalleled with older semiconductor technologies. Ordering Information Part Number Description MAGX-003135-120L00 120 W GaN Power Transistor MAGX-003135-SB4PPR 3.1-3.5 GHz Evaluation Board * Restrictions on Hazardous Substances, European Union Directive 2011/65/EU. 1 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: https://www.macom.com/support MAGX-003135-120L00 GaN on SiC HEMT Pulsed Power Transistor 120 W Peak, 3.1 to 3.5 GHz, 300 μs Pulse, 10% Duty Rev. V4 Electrical Specifications: Freq. = 3.1 - 3.5 GHz, TA = 25°C Parameter Symbol Min. Typ. Max. Units RF Functional Tests: PIN = 10 W, VDD = 50 V, IDQ = 300 mA, Pulse Width = 300 µs, Duty = 10% Peak Output Power POUT 120 135 - W Power Gain GP 10.8 11.8 - dB Drain Efficiency ηD 45 52 - % Load Mismatch Stability VSWR-S - 5:1 - - Load Mismatch Tolerance VSWR-T - 10:1 - - Electrical Characteristics: TA = 25°C Parameter Test Conditions Symbol Min. Typ. Max. Units IDS - 0.5 9 mA VGS (TH) -5 -3 -2 V DC Characteristics Drain-Source Leakage Current VGS = -8 V, VDS = 175 V Gate Threshold Voltage VDS = 5 V, ID = 23 mA Forward Transconductance VDS = 5 V, ID = 9 A GM 3.3 - - S Input Capacitance Not Applicable (Input Matched) CISS N/A N/A N/A pF Output Capacitance VDS = 50 V, VGS = -8 V, F = 1 MHz COSS - 13.4 16 pF Reverse Transfer Capacitance VDS = 50 V, VGS = -8 V, F = 1 MHz CRSS - 1.4 2.2 pF Dynamic Characteristics 2 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: https://www.macom.com/support MAGX-003135-120L00 GaN on SiC HEMT Pulsed Power Transistor 120 W Peak, 3.1 to 3.5 GHz, 300 μs Pulse, 10% Duty Rev. V4 Absolute Maximum Ratings1,2,3,4,5 Parameter Limit Input Power (PIN) 42 dBm Drain Supply Voltage (VDD) +65 V Gate Supply Voltage (VGG) -8 to 0 V Supply Current (IDD) 6.7 A Absolute Maximum Junction/Channel Temperature 200ºC Pulsed Power Dissipation at 85ºC 170 W (Pulse Width = 100 μs) 144 W (Pulse Width = 300 μs) Operating Temperature -40 to +95ºC Storage Temperature -65 to +150ºC ESD Min. - Charged Device Model (CDM) 300 V ESD Min. - Human Body Model (HBM) 700 V 1. 2. 3. 4. Exceeding any one or combination of these limits may cause permanent damage to this device. MACOM does not recommend sustained operation near these survivability limits. For saturated performance, the following is recommended: (3*VDD + abs(VGG)) 1 x 106 hours. Junction temperature directly affects device MTTF and should be kept as low as possible to maximize lifetime. 5. Junction Temperature (TJ) = TC + ӨJC * ((V * I) - (POUT - PIN)). Typical Transient Thermal Resistances (IDQ = 300 mA, 300 μs pulse, 10% duty cycle): a) Freq. = 3.1 GHz, ӨJC = 0.63C/W TJ = 178C (TC = 85C, 50 V, 5.15 A, POUT = 120 W, PIN = 9.5 W) b) Freq. = 3.3 GHz, ӨJC = 0.69C/W TJ = 188C (TC = 85C, 50 V, 5.24 A, POUT = 120 W, PIN = 7.0 W) c) Freq. = 3.5 GHz, ӨJC = 0.67C/W TJ = 180C (TC = 85C, 50 V, 5.12 A, POUT = 120 W, PIN = 6.8 W) 3 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: https://www.macom.com/support MAGX-003135-120L00 GaN on SiC HEMT Pulsed Power Transistor 120 W Peak, 3.1 to 3.5 GHz, 300 μs Pulse, 10% Duty Rev. V4 Evaluation Board Assembly (3.1 - 3.5 GHz) Correct Device Sequencing Evaluation Board Impedances Freq. (MHz) ZIF (Ω) ZOF (Ω) 3100 5.9 - j4.2 4.1 - j2.4 3300 5.2 - j4.8 4.0 - j2.8 3500 3.9 - j5.0 2.6 - j2.6 Zif INPUT NETWORK OUTPUT NETWORK Turning the device ON 1. Set VGS to the pinch-off (VP), typically -5 V. 2. Turn on VDS to nominal voltage (50 V). 3. Increase VGS until the IDS current is reached. 4. Apply RF power to desired level. Turning the device OFF 1. Turn the RF power off. 2. Decrease VGS down to VP. 3. Decrease VDS down to 0 V. 4. Turn off VGS Zof 4 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: https://www.macom.com/support MAGX-003135-120L00 GaN on SiC HEMT Pulsed Power Transistor 120 W Peak, 3.1 to 3.5 GHz, 300 μs Pulse, 10% Duty Rev. V4 Typical Performance Curves: PIN = 10 W, VDD = 50 V, IDQ = 300 mA Peak Output Power vs. Frequency Power Gain vs. Frequency 150 12.0 Power Gain (dB) Peak Output Power (W) 300 us, 10% 145 140 135 130 300 us ,10% 100 us, 10% 125 100 us, 10% 11.8 100 us, 20% 11.6 11.4 11.2 100 us, 20% 120 11.0 3.1 3.2 3.3 3.4 3.5 3.1 3.2 Frequency (GHz) 3.3 3.4 3.5 3.4 3.5 Frequency (GHz) Drain Efficiency vs. Frequency Return Loss vs. Frequency 53 0.6 300 us ,10% 0.5 100 us, 20% Droop (dB) Drain Efficiency (%) 100 us, 10% 52 51 50 0.4 0.3 0.2 300 us ,10% 49 0.1 100 us, 10% 100 us, 20% 48 0.0 3.1 3.2 3.3 3.4 3.5 Frequency (GHz) 3.1 3.2 3.3 Frequency (GHz) Droop vs. Frequency -4 Return Loss (dB) 300 us ,10% -6 100 us, 10% 100 us, 20% -8 -10 -12 -14 3.1 3.2 3.3 3.4 3.5 Frequency (GHz) 5 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: https://www.macom.com/support MAGX-003135-120L00 GaN on SiC HEMT Pulsed Power Transistor 120 W Peak, 3.1 to 3.5 GHz, 300 μs Pulse, 10% Duty Rev. V4 Typical Performance Curves: VDD = 50 V, IDQ = 300 mA 180 55 Drain Efficiency (%) Peak Output Power (W) Output Power / Drain Efficiency vs. Input Power (Pulse Width = 300 μs, Duty = 10%) 150 120 3.1 GHz 3.3 GHz 90 50 45 3.1GHz 3.3GHz 40 3.5 GHz 3.5GHz 60 35 5 7 9 11 13 5 7 Input Power (W) 9 11 13 Input Power (W) Output Power / Drain Efficiency vs. Input Power (Pulse Width = 100 μs, Duty = 10%) 55 Drain Efficiency (%) Peak Output Power (W) 180 150 120 3.1 GHz 90 3.3 GHz 50 45 3.1 GHz 40 3.3 GHz 3.5 GHz 3.5 GHz 60 35 5 7 9 11 13 5 Input Power (W) 7 9 11 13 Input Power (W) Output Power / Drain Efficiency vs. Input Power (Pulse Width = 100 μs, Duty = 20%) 55 Drain Efficiency (%) Peak Output Power (W) 180 150 120 3.1 GHz 90 3.3 GHz 3.5 GHz 50 45 3.1 GHz 40 3.3 GHz 3.5 GHz 60 35 5 7 9 Input Power (W) 11 13 5 7 9 11 Input Power (W) 6 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: https://www.macom.com/support 13 MAGX-003135-120L00 GaN on SiC HEMT Pulsed Power Transistor 120 W Peak, 3.1 to 3.5 GHz, 300 μs Pulse, 10% Duty Rev. V4 Package Outline Handling Procedures Please observe the following precautions to avoid damage: Static Sensitivity Gallium Nitride devices are sensitive to electrostatic discharge (ESD) and can be damaged by static electricity. Proper ESD control techniques should be used when handling these devices. 7 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: https://www.macom.com/support MAGX-003135-120L00 GaN on SiC HEMT Pulsed Power Transistor 120 W Peak, 3.1 to 3.5 GHz, 300 μs Pulse, 10% Duty Rev. V4 M/A-COM Technology Solutions Inc. All rights reserved. Information in this document is provided in connection with M/A-COM Technology Solutions Inc ("MACOM") products. These materials are provided by MACOM as a service to its customers and may be used for informational purposes only. Except as provided in MACOM's Terms and Conditions of Sale for such products or in any separate agreement related to this document, MACOM assumes no liability whatsoever. MACOM assumes no responsibility for errors or omissions in these materials. MACOM may make changes to specifications and product descriptions at any time, without notice. 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