MAGX-L21214-650L00

MAGX-001214-650L0x GaN on SiC HEMT Pulsed Power Transistor 650 W Peak, 1200-1400 MHz, 300 μs Pulse, 10% Duty Features Rev. V3 MAGX-001214-650L00  GaN on SiC Depletion-Mode Transistor Technology  Internally Matched  Common-Source Configuration  Broadband Class AB Operation  RoHS* Compliant and 260°C Reflow Compatible  +50 V Typical Operation  MTTF = 600 Years (TJ < 200 °C) Applications  L-Band pulsed radar. Description The MAGX-001214-650L0x is a gold-metalized matched Gallium Nitride (GaN) on Silicon Carbide (SiC) RF power transistor optimized for pulsed L-Band radar applications. Using state of the art wafer fabrication processes, these high performance transistors provide high gain, efficiency, bandwidth, and ruggedness over a wide bandwidth for today’s demanding application needs. High breakdown voltages allow for reliable and stable operation under more extreme mismatch load conditions compared with older semiconductor technologies. Ordering Information Part Number Description MAGX-001214-650L00 GaN Transistor MAGX-L21214-650L00 1200-1400 MHz Evaluation Board Typical RF Performance Under Standard Operating Conditions, POUT = 650 W (Peak) Freq. (MHz) PIN (W) Gain (dB) ID (A) Eff. (%) RL (dB) Droop (dB) +1dB OD (W) VSWR-S (3:1) 1200 8.7 18.8 21.3 61.0 -13.9 0.2 717 S 1250 8.5 18.9 22.0 58.9 -13.8 0.3 726 S 1300 8.0 19.1 22.4 57.8 -13.5 0.3 724 S 1350 7.0 19.7 21.8 59.7 -15.8 0.3 723 S 1400 7.0 19.7 21.1 61.4 -15.0 0.2 697 S * Restrictions on Hazardous Substances, European Union Directive 2002/95/EC. 1 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: https://www.macom.com/support MAGX-001214-650L0x GaN on SiC HEMT Pulsed Power Transistor 650 W Peak, 1200-1400 MHz, 300 μs Pulse, 10% Duty Rev. V3 Electrical Specifications: Freq. = 1200 - 1400 MHz, TA = 25°C Parameter Test Conditions Symbol Min. Typ. Max. Units PIN - 7.5 10.3 W GP 18 19.5 - dB ηD 55 60 - % Droop - 0.3 0.6 dB VSWR-S - 2:1 - - VSWR-T - 3:1 - - Test Conditions Symbol Min. Typ. Max. Units Drain-Source Leakage Current VGS = -8 V, VDS = 175 V IDS - 1.7 33 mA Gate Threshold Voltage VDS = 5 V, ID = 90 mA VGS (TH) -5 -2.9 -2 V Forward Transconductance VDS = 5 V, ID = 21 mA GM 16.2 21.7 - S CISS N/A N/A N/A pF COSS - 55 - pF CRSS - 5.5 - pF RF Functional Tests Peak Input Power Power Gain Drain Efficiency Pulse Droop Load Mismatch Stability VDD = 50 V, IDQ = 500 mA Pulse Width = 300 µs, Duty Cycle = 10% POUT = 650 W Peak (65 W avg.) Load Mismatch Tolerance Electrical Characteristics: TA = 25°C Parameter DC Characteristics Dynamic Characteristics Input Capacitance Output Capacitance Reverse Transfer Capacitance Not applicable - Input matched VDS = 50 V, VGS = -8 V, Freq. = 1 MHz 2 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: https://www.macom.com/support MAGX-001214-650L0x GaN on SiC HEMT Pulsed Power Transistor 650 W Peak, 1200-1400 MHz, 300 μs Pulse, 10% Duty Rev. V3 Absolute Maximum Ratings1,2,3 Parameter Limit Drain Voltage (VDD) +65 V Gate Voltage (VGG) -8 to 0 V Drain Current (IDD) 27 A 4 Input Power (PIN) Operating Junction Temperature PIN (nominal) + 3 dB 5 250ºC Peak Pulsed Power Dissipation at 85ºC 700 W Operating Temperature Range -40 to +85ºC Storage Temperature Range -65 to +150ºC ESD Min. - Charged Device Model (CDM) 1300 V ESD Min. - Human Body Model (HBM) 4000 V 1. Exceeding any one or combination of these limits may cause permanent damage to this device. 2. MACOM does not recommend sustained operation near these survivability limits. 3. For saturated performance it is recommended that the sum of ( 3 * VDD + | VGG | ) < 175 V. 4. Input Power Limit is +3 dB over nominal drive required to achieve POUT = 650 W. 5. Operating junction temperature is measured with infrared (IR) microscope. Junction temperature directly affects a device's MTTF and should be kept as low as possible to maximize lifetime.  MTTF = 5.3 x 106 hours (TJ < 200°C)  MTTF = 6.8 x 104 hours (TJ < 250°C) Thermal Characteristics Parameter Test Conditions Symbol Typical Units Thermal Resistance TC = 70ºC, VDD = 50 V, IDQ = 500 mA, POUT = 650 W Pulse Width = 300 µs, Duty Cycle = 10% ΘJC 0.25 °C/W 3 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: https://www.macom.com/support MAGX-001214-650L0x GaN on SiC HEMT Pulsed Power Transistor 650 W Peak, 1200-1400 MHz, 300 μs Pulse, 10% Duty Rev. V3 Test Fixture Assembly Contact factory for gerber file or additional circuit information. Correct Device Sequencing Test Fixture Impedances F (MHz) ZIF (Ω) ZOF (Ω) 1200 0.8 - j0.9 1.4 + j0.2 1250 0.8 - j0.7 1.4 + j0.2 1300 0.7 - j0.6 1.4 + j0.1 1350 0.7 - j0.4 1.2 + j0.1 1400 0.7 - j0.2 1.1 + j0.2 Zif INPUT NETWORK Turning the device ON 1. Set VGS to the pinch-off (VP), typically -5 V. 2. Turn on VDS to nominal voltage (50 V). 3. Increase VGS until the IDS current is reached. 4. Apply RF power to desired level. Turning the device OFF 1. Turn the RF power off. 2. Decrease VGS down to VP. 3. Decrease VDS down to 0 V. 4. Turn off VGS. OUTPUT NETWORK Zof Contact factory for gerber file or additional circuit information. 4 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: https://www.macom.com/support MAGX-001214-650L0x GaN on SiC HEMT Pulsed Power Transistor 650 W Peak, 1200-1400 MHz, 300 μs Pulse, 10% Duty Rev. V3 RF Power Transfer Curve (Output Power vs. Input Power) 850 Output Power (W) 750 650 550 450 1.20 GHz 350 1.30 GHz 250 1.40 GHz 150 50 1.0 3.0 5.0 7.0 9.0 11.0 13.0 15.0 Input Power (W) RF Power Transfer Curve (Drain Efficiency vs. Output Power) 70 Drain Efficiency (%) 60 50 40 1.20 GHz 1.30 GHz 30 1.40 GHz 20 50 150 250 350 450 550 650 750 Output Power (W) 5 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: https://www.macom.com/support 850 MAGX-001214-650L0x GaN on SiC HEMT Pulsed Power Transistor 650 W Peak, 1200-1400 MHz, 300 μs Pulse, 10% Duty Rev. V3 Outline Drawing MAGX-001214-650L00 6 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: https://www.macom.com/support MAGX-001214-650L0x GaN on SiC HEMT Pulsed Power Transistor 650 W Peak, 1200-1400 MHz, 300 μs Pulse, 10% Duty Rev. V3 M/A-COM Technology Solutions Inc. All rights reserved. Information in this document is provided in connection with M/A-COM Technology Solutions Inc ("MACOM") products. These materials are provided by MACOM as a service to its customers and may be used for informational purposes only. Except as provided in MACOM's Terms and Conditions of Sale for such products or in any separate agreement related to this document, MACOM assumes no liability whatsoever. 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