MAGX-S00245-025000

MAGX-000245-025000 GaN on SiC HEMT Power Transistor 25 W, DC-2.5 GHz, CW Power Rev. V1 Features        MAGX-000245-025000 GaN on SiC Depletion Mode Transistor Common-Source Configuration Broadband Class AB Operation Thermally Enhanced Cu/Mo/Cu Package RoHS* Compliant +28V Typical Operation MTTF = 600 years (TJ < 200°C) Primary Applications              RF Lighting RF Plasma Generation RF Heating RF Drying Material Processing Power Industrial Equipment ISM Broadcast MILCOM Datalinks Air Traffic Control Radar - Commercial Weather Radar - Commercial Military Radar - Military Description The MAGX-000245-025000 is a gold metalized unmatched Gallium Nitride (GaN) on Silicon Carbide (SiC) RF power transistor suitable for CW applications centered at 2.45GHz for a ppl i c at i o n in I S M/ Br oa dc as t / Pl as ma applications. This product differentiates itself from other GaN power transistors in that it runs well in CW. The matching network is compact and small. The frequency of operation covers DC - 2.5 GHz which captures commercial as well as military applications. This product is designed as a high power driver amplifier or final stage depending on the application. Using state of the art wafer fabrication processes, these high performance transistors provide high gain, efficiency, bandwidth and ruggedness over a wide bandwidth for today’s demanding application needs. The MAGX-000245-025000 is constructed using a thermally enhanced Cu/Mo/ Cu flanged ceramic package which provides excellent thermal performance. 1 Ordering Information Part Number Description MAGX-000245-025000 Bulk Packaging MAGX-S00245-025000 Sample Board (2.45 GHz) * Restrictions on Hazardous Substances, European Union Directive 2002/95/EC. M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macomtech.com for additional data sheets and product information. • North America Tel: 800.366.2266 / Fax: 978.366.2266 • Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 • Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 MAGX-000245-025000 GaN on SiC HEMT Power Transistor 25 W, DC-2.5 GHz, CW Power Rev. V1 Electrical Specifications1: Freq. = 2450 MHz, TA = 25°C Parameter Test Conditions Symbol Min. Typ. Max. Units RF Functional Tests: VDD = +28 V, IDQ = 100 mA, CW Operation Input Power Pout= 25 W Pin - 1.6 2.4 W Power Gain Pout= 25 W GP 10.2 12 - dB Drain Efficiency Pout= 25 W ηD 57 62 - % Load Mismatch Stability Pout= 25 W VSWR-S - 5:1 - - Load Mismatch Tolerance Pout= 25 W VSWR-T - 10:1 - - Electrical Characteristics: TA = 25°C Parameter Test Conditions Symbol Min. Typ. Max. Units Drain-Source Leakage Current VGS = -8 V, VDS = 175 V IDS - - 3.0 mA Gate Threshold Voltage VDS = 5 V, ID = 6 mA VGS (TH) -5 -3 -2 V Forward Transconductance VDS = 5 V, ID = 1500 mA GM 1.1 - - S Input Capacitance VDS = 0 V, VGS = -8 V, F = 1 MHz CISS - 13.2 - pF Output Capacitance VDS = 50 V, VGS = -8 V, F = 1 MHz COSS - 5.6 - pF Reverse Transfer Capacitance VDS = 50 V, VGS = -8 V, F = 1 MHz CRSS - 0.5 - pF DC Characteristics Dynamic Characteristics Correct Device Sequencing Turning the device ON 1. Set VGS to the pinch-off (VP), typically -5 V. 2. Turn on VDS to nominal voltage (+28V). 3. Increase VGS until the IDS current is reached. 4. Apply RF power to desired level. Turning the device OFF 1. Turn the RF power off. 2. Decrease VGS down to VP. 3. Decrease VDS down to 0 V. 4. Turn off VGS. 2 1. Electrical Specifications measured in MACOM RF evaluation board. M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macomtech.com for additional data sheets and product information. • North America Tel: 800.366.2266 / Fax: 978.366.2266 • Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 • Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 MAGX-000245-025000 GaN on SiC HEMT Power Transistor 25 W, DC-2.5 GHz, CW Power Rev. V1 Absolute Maximum Ratings2,3,4 Parameter Limit Supply Voltage (VDD) +32 V Supply Voltage (VGg) -8 to 0 V Supply Current (IDMAX) for CW Operation at VDD = +32 V Input Power (PIN) for CW Operation at VDD = +28 V Absolute Max. Junction/Channel Temperature Power Dissipation at 85 ºC for CW Operation at VDD = +28 V 3A PIN (nominal) + 3 dB 200ºC 13 W MTTF (TJ