MAGX-S10035-045000

MAGX-000035-045000 GaN on SiC HEMT Pulsed Power Transistor 45 W Peak, DC-3500 MHz, 1 ms Pulse, 10% Duty Rev. V2 Features        MAGX-000035-045000 GaN on SiC Depletion Mode Transistor Common-Source Configuration Broadband Class AB Operation Thermally Enhanced Cu/Mo/Cu Package RoHS* Compliant +50V Typical Operation MTTF = 600 years (TJ < 200°C) Application  Civilian and Military Pulsed Radar Description The MAGX-000035-045000 is a gold metalized unmatched Gallium Nitride (GaN) on Silicon Carbide (SiC) RF power transistor optimized for civilian and military radar pulsed applications between DC 3500 MHz. Using state of the art wafer fabrication processes, these high performance transistors provide high gain, efficiency, bandwidth and ruggedness over a wide bandwidth for today’s demanding application needs. The MAGX-000035045000 is constructed using a thermally enhanced Cu/Mo/Cu flanged ceramic package which provides excellent thermal performance. High breakdown voltages allow for reliable and stable operation in extreme mismatched load conditions unparalleled with older semiconductor technologies. 1 1 Ordering Information Part Number Description MAGX-000035-045000 Bulk Packaging MAGX-S10035-045000 Sample Board (2.7 - 3.5 GHz) * Restrictions on Hazardous Substances, European Union Directive 2002/95/EC. M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: https://www.macom.com/support MAGX-000035-045000 GaN on SiC HEMT Pulsed Power Transistor 45 W Peak, DC-3500 MHz, 1 ms Pulse, 10% Duty Rev. V2 Electrical Specifications1: Freq. = 2700-3500 MHz, TA = 25°C Parameter Test Conditions Symbol Min. Typ. Max. Units RF Functional Tests: VDD = 50 V, IDQ = 100 mA, 1 ms Pulse, 10% Duty Output Power PIN= 4 W POUT 45 54 - W Power Gain PIN= 4 W GP 10.5 11.3 - dB Drain Efficiency PIN= 4 W ηD 48 55 - % Input Return Loss PIN= 4 W IRL - -8 - dB Load Mismatch Stability PIN= 4 W VSWR-S - 5:1 - - Load Mismatch Tolerance PIN= 4 W VSWR-T - 10:1 - - Symbol Min. Typ. Max. Units Electrical Specifications1: Freq. = 1030-1090 MHz, TA = 25°C Parameter Test Conditions RF Functional Tests: VDD = 50 V, IDQ = 100 mA, 1 ms Pulse, 10% Duty Output Power PIN= 0.9 W POUT - 60 - W Power Gain PIN= 0.9 W GP - 18 - dB Drain Efficiency PIN= 0.9 W ηD - 64 - % Input Return Loss PIN= 0.9 W IRL - -8 - dB Load Mismatch Stability PIN= 0.9 W VSWR-S - 5:1 - - Load Mismatch Tolerance PIN= 0.9 W VSWR-T - 10:1 - - Electrical Characteristics: TA = 25°C Parameter Test Conditions Symbol Min. Typ. Max. Units Drain-Source Leakage Current VGS = -8 V, VDS = 175 V IDS - - 3.0 mA Gate Threshold Voltage VDS = 5 V, ID = 6 mA VGS (TH) -5 -3 -2 V Forward Transconductance VDS = 5 V, ID = 1500 mA GM 1.1 - - S Input Capacitance VDS = 0 V, VGS = -8 V, F = 1 MHz CISS - 13.2 - pF Output Capacitance VDS = 50 V, VGS = -8 V, F = 1 MHz COSS - 5.6 - pF Reverse Transfer Capacitance VDS = 50 V, VGS = -8 V, F = 1 MHz CRSS - 0.5 - pF DC Characteristics Dynamic Characteristics 2 2 1. Electrical Specifications measured in MACOM RF evaluation board. M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: https://www.macom.com/support MAGX-000035-045000 GaN on SiC HEMT Pulsed Power Transistor 45 W Peak, DC-3500 MHz, 1 ms Pulse, 10% Duty Rev. V2 Absolute Maximum Ratings2,3,4 Parameter Supply Voltage (VDD) (Pulsed) Supply Voltage (VGg) Supply Current (IDMAX) for pulsed operation at VDD = 50 V Input Power (PIN) for pulsed operation at VDD = 50 V Absolute Max. Junction/Channel Temperature Power Dissipation at 85 ºC for pulsed operation at VDD = 50 V Limit +65 V -8 to 0 V 3A PIN (nominal) + 3 dB 200ºC 48 W MTTF (TJ