MAPRST0912-350
Avionics Pulsed Power Transistor
350 W, 960 - 1215 MHz, 10 µs Pulse, 10 % Duty
Features
Rev. V1
Outline Drawing
NPN silicon microwave power transistors
Common base configuration
Broadband Class C operation
High efficiency inter-digitized geometry
Diffused emitter ballasting resistors
Gold metallization system
Internal input and output impedance matching
Hermetic metal/ceramic package
RoHS* Compliant
Absolute Maximum Ratings @ +25°C
Parameter
Symbol
Rating
Collector-Emitter Voltage
VCES
65 V
Emitter-Base Voltage
VEBO
3V
Collector Current (Peak)
IC
32.5 A
Power Dissipation
PTOT
1.34 kW
Storage Temperature
TSTG
-65°C to +200°C
Junction Temperature
TJ
+200°C
Electrical Specifications: VCC = 50 V, PIN = 40 W, TA = 25 ± 5°C (unless otherwise noted)
Parameter
Symbol
Test Conditions
Units
Min.
Max.
Collector-Emitter Breakdown Voltage
BVCES
IC = 50 mA
V
65
-
Collector-Emitter Leakage Current
ICES
VCE = 50 V
mA
-
15
Thermal Resistance
RTH(JC)
F = 960, 1090, 1215 MHz
°C/W
-
0.13
Output Power
PO
F = 960, 1090, 1215 MHz
W
350
-
Power Gain
GP
F = 960, 1090, 1215 MHz
dB
9.4
-
Collector Efficiency
hC
F = 960, 1090, 1215 MHz
%
45
-
Input Return Loss
RL
F = 960, 1090, 1215 MHz
dB
-
-9
Load Mismatch Stability
VSWR-T
F = 960 MHz
-
-
10:1
Load Mismatch Tolerance
VSWR-S
F = 960, 1090, 1215 MHz
-
-
1.5:1
* Restrictions on Hazardous Substances, European Union Directive 2011/65/EU.
1
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Visit www.macom.com for additional data sheets and product information.
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MAPRST0912-350
Avionics Pulsed Power Transistor
350 W, 960 - 1215 MHz, 10 µs Pulse, 10 % Duty
Rev. V1
Typical RF Performance
P1dB Overdrive
Freq.
(MHz)
PIN
(W)
POUT
(W)
Gain
(dB)
Gain
(dB)
IC
(A)
Eff
(%)
RL
(dB)
VSWR-S
(1.5:1)
VSWR-T
(10:1)
POUT (W)
PO (dB)
960
40
421
10.22
—
15.7
53.4
-19.9
S
P
496
0.72
1090
40
401
10.01
—
15.0
53.4
-18.5
S
—
469
0.69
1215
40
399
9.99
0.23
15.0
53.2
-21.5
S
—
421
0.22
Note: Po(dB) is the difference between POUT at 1dB overdrive and POUT at PIN = 40W.
Gain vs. Frequency
Collector Efficiency vs. Frequency
2
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support
MAPRST0912-350
Avionics Pulsed Power Transistor
350 W, 960 - 1215 MHz, 10 µs Pulse, 10 % Duty
Rev. V1
RF Power Transfer Curve
(Output Power Vs. Input Power)
Broadband Test Fixture Impedance
F (MHz)
ZIF (Ω)
ZOF (Ω)
960
1.8 - j1.7
1.7 - j1.7
1030
1.7 - j1.4
1.8 - j1.2
1090
1.6 - j1.2
1.9 - j0.8
1150
1.4 - j1.0
1.9 - j0.6
1215
1.2 - j0.8
2.0 - j0.2
3
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support
MAPRST0912-350
Avionics Pulsed Power Transistor
350 W, 960 - 1215 MHz, 10 µs Pulse, 10 % Duty
Rev. V1
Test Fixture Circuit Dimensions
Test Fixture Assembly
4
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
For further information and support please visit:
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MAPRST0912-350
Avionics Pulsed Power Transistor
350 W, 960 - 1215 MHz, 10 µs Pulse, 10 % Duty
Rev. V1
M/A-COM Technology Solutions Inc. All rights reserved.
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5
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support