NPA1006-SMBPPR

This part is not recommended for new designs. Please refer to part number NPA1006A for a form, fit and function alternative. GaN Amplifier 28 V, 12.5 W 20 - 1000 MHz NPA1006 Rev. V5 Features • • • • • • • • • • • GaN on Si HEMT D-Mode Amplifier Suitable for Linear & Saturated Applications Broadband Operation from 20 - 1000 MHz 50 Ω Input Matched, Output Unmatched 28 V Operation 14 dB Gain @ 900 MHz 65% Drain Efficiency @ 900 MHz 100% RF Tested Lead-Free 6 x 5 mm 8-lead PDFN Package Halogen-Free “Green” Mold Compound RoHS* Compliant Functional Schematic VG 1 8 N/C The NPA1006 is a GaN on silicon amplifier optimized for 20 - 1000 MHz operation. This amplifier has been designed for saturated and linear operation with output levels to 12.5 W (41 dBm) assembled in a lead-free 6 x 5 mm 8-lead PDFN plastic package. RFIN 2 7 RFOUT / VD RFIN 3 6 RFOUT / VD The NPA1006 is ideally suited for general purpose narrowband to broadband applications in test and measurement, defense communications, land mobile radio and wireless infrastructure. N/C 4 5 N/C Description Input Match 9 Paddle Pin Designations Ordering Information 1 Pin # Pin Name Function 1 VG Gate Voltage 2, 3 RFIN RF Input Part Number Package 4, 5 N/C2 No Connection NPA1006 Bulk Quantity 6, 7 RFOUT / VD RF Output / Drain Voltage NPA1006-TR0500 500 piece reel 8 N/C2 No Connection NPA1006-SMB Sample Board 9 Paddle3 Ground 1. Reference Application Note M513 for reel size information. 2. All no connection pins may be left floating or grounded. 3. The exposed pad centered on the package bottom must be connected to RF and DC ground. This path must also provide a low thermal resistance heat path. * Restrictions on Hazardous Substances, compliant to current RoHS EU directive. 1 MACOM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: https://www.macom.com/support DC-0008533 This part is not recommended for new designs. Please refer to part number NPA1006A for a form, fit and function alternative. GaN Amplifier 28 V, 12.5 W 20 - 1000 MHz NPA1006 Rev. V5 RF Electrical Specifications: TC = 25°C , VDS = 28 V, IDQ = 88 mA, 100 - 1000 MHz Broadband Characterization Circuit Parameter Test Conditions Symbol Min. Typ. Max. Units Small Signal Gain CW, 900 MHz GSS - 15.0 - dB Gain CW, POUT = 41 dBm, 900 MHz GP 12.5 14.0 - dB Saturated Output Power CW, 900 MHz PSAT - 42.9 - dBm Drain Efficiency CW, POUT = 41 dBm, 900 MHz ηD 61 65 - % Power Added Efficiency CW, POUT = 41 dBm, 900 MHz PAE 57.5 62.4 - % Drain Efficiency CW, 900 MHz ηDSAT - 70 - % Drain Voltage (VDS) Drain Voltage VDS - 28 - V Ruggedness All phase angles  VSWR = 15:1, No Device Damage DC Electrical Specifications: T C = 25°C Parameter Test Conditions Symbol Min. Typ. Max. Units Drain-Source Leakage Current VGS = -8 V, VDS = 100 V IDLK - 6 - mA Gate-Source Leakage Current VGS = -8 V, VDS = 0 V IGLK - 3 - mA Gate Threshold Voltage VDS = 28 V, ID = 6 mA VT -2.5 -1.5 -0.5 V Gate Quiescent Voltage VDS = 28 V, ID = 88 mA VGSQ -2.1 -1.2 -0.3 V On Resistance VDS = 2 V, ID = 45 mA RON - 0.8 - Ω Saturated Drain Current VDS = 7 V pulsed, pulse width 300 µs ID(SAT) - 3.5 - A 2 MACOM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: https://www.macom.com/support DC-0008533 This part is not recommended for new designs. Please refer to part number NPA1006A for a form, fit and function alternative. GaN Amplifier 28 V, 12.5 W 20 - 1000 MHz NPA1006 Rev. V5 Absolute Maximum Ratings3,4,5 Parameter Absolute Maximum Drain Source Voltage, VDS 100 V Gate Source Voltage, VGS -10 to 3 V Gate Current, IG 12 mA Junction Temperature, TJ +200°C Operating Temperature -40°C to +85°C Storage Temperature -65°C to +150°C ESD Min. - Human Body Model (HBM) +500 V 3. Exceeding any one or combination of these limits may cause permanent damage to this device. 4. MACOM does not recommend sustained operation near these survivability limits. 5. Operating at nominal conditions with T J ≤ 200°C will ensure MTTF > 1 x 106 hours. Thermal Characteristics6 Parameter Test Conditions Symbol Typical Units Thermal Resistance VDS = 28 V, TJ = 200°C ӨJC 4.6 °C/W 6. Junction temperature (T J) measured using IR Microscopy. Case temperature measured using thermocouple embedded in heat-sink. Handling Procedures Please observe the following precautions to avoid damage: Static Sensitivity Gallium Nitride Circuits are sensitive to electrostatic discharge (ESD) and can be damaged by static electricity. Proper ESD control techniques should be used when handling these HBM Class 1B devices. 3 MACOM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: https://www.macom.com/support DC-0008533 This part is not recommended for new designs. Please refer to part number NPA1006A for a form, fit and function alternative. GaN Amplifier 28 V, 12.5 W 20 - 1000 MHz NPA1006 Rev. V5 Characterization Circuit and Recommended Tuning Solution 100 - 1000 MHz Broadband VGS VDS C1 10 mF C2 0.01 mF C3 4.7 mF R1 49.9 W L1 0.9 mH L2 5.4 nH RF In C4 2400 pF NPA1006 C5 4.7 pF C6 2400 pF RF Out Bias Sequencing Description Parts measured on the characterization board (20-mil thick RO4350). The PCB’s electrical and thermal ground is provided using a standard-plated densely packed via hole array (see recommended via pattern). Turning the device ON Matching is provided using a combination of lumped elements and transmission lines as shown in the simplified schematic above. Recommended tuning solution component placement, transmission lines, and details are shown on the next page. Turning the device OFF 1. Set VGS to the pinch-off (VP), typically -5 V. 2. Turn on VDS to nominal voltage (28 V). 3. Increase VGS until the IDS current is reached. 4. Apply RF power to desired level. 1. Turn the RF power off. 2. Decrease VGS down to VP. 3. Decrease VDS down to 0 V. 4. Turn off VGS. Recommended Via Pattern (All dimensions shown as inches) 4 MACOM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: https://www.macom.com/support DC-0008533 This part is not recommended for new designs. Please refer to part number NPA1006A for a form, fit and function alternative. GaN Amplifier 28 V, 12.5 W 20 - 1000 MHz NPA1006 Rev. V5 Characterization Circuit and Recommended Tuning Solution 100 - 1000 MHz Broadband VGS VDS C1 C3 C2 RFIN R1 L1 RFOUT C4 L2 C5 C6 Parts List Reference Value Tolerance Manufacturer Part Number C1 10 µF 20% TDK C2012X5R1C106M085AC C2 0.01 µF 10% AVX 06031C103JAT2A C3 4.7 µF 10% TDK C5750X7R2A475K230KA C4, C6 2400 pF - Dielectric Labs, Inc. C08BL242X-5UN-X0 C5 4.7 pF 0.1 pF Murata GQM2195C2E4R7BB12 R1 49.9 Ω 1% Panasonic ERJ-6ENF49R9V L1 0.9 µH 10% Coilcraft 1008AF-901XJLC L2 5.4 nH 5% Coilcraft 0906-5_LB PCB Rogers RO4350, er=3.5, 0.020” Heat Sink Copper Heat Sink 3.0” x 2.75” 5 MACOM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: https://www.macom.com/support DC-0008533 This part is not recommended for new designs. Please refer to part number NPA1006A for a form, fit and function alternative. GaN Amplifier 28 V, 12.5 W 20 - 1000 MHz NPA1006 Rev. V5 Typical Performance Measured in the Broadband 100 - 1000 MHz Characterization Circuit: CW, VDS = 28 V, IDQ = 88 mA (unless otherwise noted) Deembedded device S-Parameters with RG = 470 Ω 25 Broadband Circuit S-Parameters 25 0 0 s21 s21 s11 -15 -20 5 -20 -25 1.2 0 -15 5 0.2 0.4 0.6 0.8 1 s21 (dB) 10 10 0 0.2 0.4 0.6 0.8 1 s11, s22 (dB) -10 -10 0 -5 s22 15 15 0 s11 20 -5 s22 s11, S22 (dB) s21 (dB) 20 -25 1.2 Frequency (GHz) Frequency (GHz) Performance vs. Frequency at POUT = 41 dBm Performance vs. Input Return Loss at POUT = 41 dBm 16 90 16 -10 14 -12 12 -14 10 -16 Gain (dB) 70 13 60 12 50 11 40 10 30 0 0.2 0.4 0.6 Frequency (GHz) 0.8 1 Gain 8 -18 IRL 6 Input Return Loss (dB) 14 Power Added Efficiency (%) 80 PAE Gain (dB) Gain 15 -20 0 0.2 0.4 0.6 0.8 1 Frequency (GHz) 6 MACOM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: https://www.macom.com/support DC-0008533 This part is not recommended for new designs. Please refer to part number NPA1006A for a form, fit and function alternative. GaN Amplifier 28 V, 12.5 W 20 - 1000 MHz NPA1006 Rev. V5 Typical Performance Measured in the Broadband 100 - 1000 MHz Characterization Circuit: CW, VDS = 28 V, IDQ = 88 mA (unless otherwise noted) Gain vs. Frequency Gain vs. Frequency at PIN = 27 dBm 15 15 +25°C 14 14 -40°C 13 12 Gain (dB) Gain (dB) +85°C POUT = 30dBm 13 12 POUT = 40dBm 11 11 POUT = 41dBm 10 10 0 0.2 0.4 0.6 0.8 0 1 0.2 0.4 0.6 0.8 1 Frequency (GHz) Frequency (GHz) Input Return Loss vs. Frequency Input Return Loss at PIN = 27 dBm vs. Frequency -12 -13 -13 POUT = 40dBm Input Return Loss (dB) Input Return Loss (dB) POUT = 30dBm POUT = 41dBm -14 -15 -16 -17 -14 -15 -16 +25°C -17 -40°C +85°C -18 -18 0 0.2 0.4 0.6 0.8 0 1 0.2 Frequency (GHz) Power Added Efficiency vs. Frequency 0.8 1 90 POUT = 30dBm POUT = 40dBm POUT = 41dBm 80 70 +25°C Power Added Efficiency (%) Power Added Efficiency (%) 0.6 Power Added Efficiency at PIN = 27 dBm vs. Frequency 90 60 50 40 30 20 10 0 7 0.4 Frequency (GHz) 0.2 0.4 0.6 Frequency (GHz) 0.8 1 -40°C 80 +85°C 70 60 50 40 0 0.2 0.4 0.6 0.8 1 Frequency (GHz) MACOM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: https://www.macom.com/support DC-0008533 This part is not recommended for new designs. Please refer to part number NPA1006A for a form, fit and function alternative. GaN Amplifier 28 V, 12.5 W 20 - 1000 MHz NPA1006 Rev. V5 Typical Performance Measured in the Broadband 100 - 1000 MHz Characterization Circuit: CW, VDS = 28 V, IDQ = 88 mA (unless otherwise noted) Gain vs. POUT Power Added Efficiency vs. POUT 15.0 Power Added Efficiency (%) 80 Gain (dB) 14.0 13.0 12.0 100MHz 500MHz 11.0 900MHz 10.0 10 15 20 25 30 35 40 70 100MHz 60 500MHz 50 900MHz 40 30 20 10 0 10 45 15 20 25 POUT (dBm) Input Return Loss vs. POUT 40 45 75 100 -1.1 100MHz 500MHz 900MHz 44mA -1.2 88mA 150mA -14 VGSQ (V) Input Return Loss (dB) 35 Quiescent VGS vs. Temperature -12 -13 30 POUT (dBm) -15 -1.3 -16 -1.4 -17 -18 10 15 20 25 30 POUT (dBm) 35 40 45 -1.5 -50 -25 0 25 50 o Temperature ( C) 8 MACOM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: https://www.macom.com/support DC-0008533 This part is not recommended for new designs. Please refer to part number NPA1006A for a form, fit and function alternative. GaN Amplifier 28 V, 12.5 W 20 - 1000 MHz NPA1006 Rev. V5 Typical 2-Tone Performance Measured in the Broadband 100 - 1000 MHz Characterization Circuit: 1 MHz Tone Spacing, VDS = 28 V, IDQ = 88 mA (unless otherwise noted) 2-Tone IMD vs. Output Power vs. IDQ 2-Tone Gain vs. Output Power vs. IDQ -10 17 44mA -15 16 88mA 132mA 15 150mA -25 176mA Gain (dB) IMD3 (dBc) -20 -30 -35 14 13 -40 12 -45 11 -50 0.01 0.1 1 10 44mA 88mA 132mA 150mA 176mA 10 0.01 50 0.1 1 POUT (W-PEP) 2-Tone IMD vs. Output Power (1 MHz Tone Spacing, IDQ = 132 mA, F = 450 MHz) 50 2-Tone IMD vs. Tone Spacing (POUT = 41 dBm-PEP, IDQ = 132 mA, F = 450 MHz) -10 -10 -IMD3 -15 +IMD3 -20 -20 -IMD5 +IMD5 -30 -IMD7 IMD (dBc) IMD (dBc) 10 POUT (W-PEP) +IMD7 -40 -25 -IMD3 +IMD3 -IMD5 +IMD5 -IMD7 +IMD7 -30 -35 -40 -50 -45 -60 0.01 0.1 1 POUT (W-PEP) 10 50 -50 0.1 1 10 100 Tone Spacing (MHz) 9 MACOM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: https://www.macom.com/support DC-0008533 This part is not recommended for new designs. Please refer to part number NPA1006A for a form, fit and function alternative. GaN Amplifier 28 V, 12.5 W 20 - 1000 MHz NPA1006 Rev. V5 Sample Board and Recommended Tuning Solution 20 - 1000 MHz Broadband Circuit (NPA1006-SMB) VGS VDS C1 10 mF C2 0.01 mF C3 4.7 mF R1 470 W R2 0W L1 0.9 mH L2 5.4 nH RF In C4 2400 pF C5 4.7 pF NPA1006 C6 2400 pF RF Out Parts List Reference 10 Value Tolerance Manufacturer Part Number C1 10 µF 20% TDK C2012X5R1C106M085AC C2 0.01 µF 10% AVX 06031C103JAT2A C3 4.7 µF 10% TDK C5750X7R2A475K230KA C4, C6 2400 pF - Dielectric Labs, Inc. C08BL242X-5UN-X0 C5 4.7 pF 0.1 pF Murata GQM2195C2E4R7BB12 R1 470 Ω 1% Panasonic ERJ-3EKF4700V R2 0Ω - Panasonic ERJ-6GEY0R00V L1 0.9 µH 10% Coilcraft 1008AF-901XJLC L2 5.4 nH 5% Coilcraft 0906-5_LB PCB Rogers RO4350, er=3.5, 0.020” Al Heat Sink Aluminum Heat sink MACOM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: https://www.macom.com/support DC-0008533 This part is not recommended for new designs. Please refer to part number NPA1006A for a form, fit and function alternative. GaN Amplifier 28 V, 12.5 W 20 - 1000 MHz NPA1006 Rev. V5 Typical Performance Measured in the Broadband 20 - 1000 MHz Sample Board: CW, VDS = 28 V, IDQ = 88 mA (unless otherwise noted) Performance vs. Frequency at POUT= PSAT Performance vs. Frequency at POUT = 41 dBm 30 80 70 15 60 10 50 5 0 70 30 Gain (dB) Gain (dB) 20 40 0.2 0.4 0.6 0.8 20 50 10 40 0 40 0 1 0 0.2 Frequency (GHz) 0.8 1 30 13.5 60 13.0 50 12.5 40 30 12.0 Gain Drain Eff 20 s11 s22 25 s21 (dB) 70 -10 20 -15 15 -20 s11, s22 (dB) 14.0 -5 s21 Drain Efficiency (%) Gain (dB) 0.6 Small Signal S-Parameters vs. Frequency 80 14.5 10 11.0 10.5 15 0.4 Frequency (GHz) Performance vs. Output Power (f = 900 MHz) 11.5 60 Gain Psat Drain Eff PSAT (dBm), Drain Efficiency (%) 25 PSAT (dBm), Drain Efficiency (%) 80 Gain Psat Drain Eff 20 25 30 POUT (dBm) 35 40 0 45 10 -25 0 0.2 0.4 0.6 0.8 1 Frequency (GHz) 11 MACOM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: https://www.macom.com/support DC-0008533 This part is not recommended for new designs. Please refer to part number NPA1006A for a form, fit and function alternative. GaN Amplifier 28 V, 12.5 W 20 - 1000 MHz NPA1006 Rev. V5 Lead-Free 6 x 5 mm 8-Lead PDFN† All dimensions shown as inches [mm]. † Reference Application Note S2083 for lead-free solder reflow recommendations. Meets JEDEC moisture sensitivity level (MSL) 3 requirements. Plating is NiPdAu. 12 MACOM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: https://www.macom.com/support DC-0008533 This part is not recommended for new designs. Please refer to part number NPA1006A for a form, fit and function alternative. GaN Amplifier 28 V, 12.5 W 20 - 1000 MHz NPA1006 Rev. V5 MACOM Technology Solutions Inc. (“MACOM”). All rights reserved. These materials are provided in connection with MACOM’s products as a service to its customers and may be used for informational purposes only. Except as provided in its Terms and Conditions of Sale or any separate agreement, MACOM assumes no liability or responsibility whatsoever, including for (i) errors or omissions in these materials; (ii) failure to update these materials; or (iii) conflicts or incompatibilities arising from future changes to specifications and product descriptions, which MACOM may make at any time, without notice. These materials grant no license, express or implied, to any intellectual property rights. THESE MATERIALS ARE PROVIDED "AS IS" WITH NO WARRANTY OR LIABILITY, EXPRESS OR IMPLIED, RELATING TO SALE AND/OR USE OF MACOM PRODUCTS INCLUDING FITNESS FOR A PARTICULAR PURPOSE, MERCHANTABILITY, INFRINGEMENT OF INTELLECTUAL PROPERTY RIGHT, ACCURACY OR COMPLETENESS, OR SPECIAL, INDIRECT, INCIDENTAL, OR CONSEQUENTIAL DAMAGES WHICH MAY RESULT FROM USE OF THESE MATERIALS. MACOM products are not intended for use in medical, lifesaving or life sustaining applications. MACOM customers using or selling MACOM products for use in such applications do so at their own risk and agree to fully indemnify MACOM for any damages resulting from such improper use or sale. 13 MACOM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: https://www.macom.com/support DC-0008533