NPT2019

GaN brochure_final_for website.qxd:Layout 1 5/29/14 4:26 PM Page 1 RF High Power GaN Portfolio www.macom.com GaN brochure_final_for website.qxd:Layout 1 5/29/14 4:26 PM Page 2 GaN RF Power Products Next generation high power semiconductor technology MACOM continues to develop industry-leading gallium nitride (GaN) RF power products. Our product portfolio leverages MACOM’s more than 60-year heritage of providing best-in-class standard, application specific and custom solutions for our radar, EW and communications customers. MACOM GaN products are offered as unmatched transistors, internally matched power transistors, and fully matched power pallets and modules. Using high performance GaN HEMT processes and leveraging our proprietary die layout and assembly techniques, these products exhibit robust thermal properties and excellent RF performance with respect to power, gain, gain-flatness, efficiency and ruggedness for applications up to 3.5 GHz. MACOM’s high power GaN in space-saving plastic is setting the standard for applications where SMT manufacturing, small size and light weight are required. 3 x 6 mm DFN packaged transistors are available in 10, 15, 50, and 90 W power levels. These DFN transistors are also offered in fully matched, high gain, power modules which provide highly integrated, compact solutions. Why choose GaN? MACOM GaN RF transistors improve upon the high power handling and voltage operation of LDMOS with the high frequency performance of GaAs. Improved efficiency, power, density and bandwidth give your applications enhanced performance in a smaller footprint. GaN advantages include: • High breakdown voltage • Superior power density • High RF gain and efficiency • Superior broadband capability • High frequency operation • Excellent thermal conductivity Leveraging deep experience in RF, MACOM engineers are expanding our power transistor family to fuel the future of military and commercial radars. These rugged devices deliver greater flexibility and multi-function capability in your radar communications. Our growing GaN portfolio includes 5 W-90 W transistors in SOT-89 or DFN plastic packaging, 1000 W ceramic packages and L-, S-band fully matched modules. Turn to MACOM today and in the future for superior performance, high power GaN solutions. Learn more at www.macom.com GaN Pallets Ceramic Flanged & Flangeless 14x24 Plastic SMD TO-272 Plastic PSOP Plastic 3x6 DFN Plastic Surface Mount 5x6 DFN Plastic Surface Mount 2.5x4.5 SOT-89 CW Pulsed Watts 10 20 30 50 100 200 500 100 0 GaN brochure_final_for website.qxd:Layout 1 5/29/14 4:26 PM Page 3 Radar GaN in plastic surface mount modules enable SWAP improvements and speed time-to-market for next generation AESA radar systems Features and Benefits • Fully matched over wide bandwidths enables new multifunction system capability with broad frequency operation and complex waveforms • Small size, SMT enables system SWAP and faster time-to-market through standard surface mount assembly • High gain and 50 V operation significantly reduces the size of energy storage capacitors and current draw • Engineered for SMT assembly with low thermals and low pulse droop Description MACOM’s portfolio of surface mount, GaN in plastic power modules affords radar system designers a common platform and pin-out architecture to leverage across a growing range of frequency bands. These fully matched, 2-stage GaN power modules deliver 90 W typical output power in a lightweight, 14 x 24 mm package, and deliver breakthrough power performance. Optimized for commercial air traffic control and military radar applications, the new SMT laminate packaged modules deliver GaN power performance while enabling significant application and manufacturing efficiencies. Supporting standard surface mount assembly, the module leverages commercial best practices for high-volume manufacturing, ensuring additional benefits including improved assembly yield, lower component count, and reduced touch labor. The 2-stage module is internally matched to 50 ohms, which requires no external matching components, and allows reduction in overall part count, further streamlining assembly processes. Supporting voltage operation from 28 to 50 V with high gain to reduce input power requirements, the module maximizes power and cooling efficiency and provides robust performance over a wide range of input voltages. Flexible voltage operation equips system operators to optimize the module for different power requirements and dynamically manage their total system power budget. Block Diagrams 1.2 - 1.4 GHz Line-ups 2x MAGX-001214-125L00 MAGX-001214-500L00 500 W 32 dB gain MAGX-000035-01000P MAGX-000040-00500P 4x MAGX-001214-500L00 1750 W 32 dB gain MAGX-000035-05000P 250 W 30 dB gain L-Band Devices MAGX-001214-125L00 MAGX-001214-250L00 MAGX-001214-500L00 MAGX-001214-500L0S MAGX-000040-00500P MAGX-000035-01000P MAGX-000035-01000X MAGX-000035-015000 MAGX-000035-01500P MAGX-000035-01500S MAGX-000035-030000 MAGX-000035-045000 MAGX-000035-05000P MAGX-000035-09000P MAMG-001214-090PSM GaN brochure_final_for website.qxd:Layout 1 5/29/14 4:27 PM Page 4 Avionics and Air Traffic Control MACOM’s high power GaN is leading the future of next generation power in Avionics systems. Features and Benefits • High power allows customer to upgrade systems for increased range and performance • High efficiency reduces the power consumption and cooling requirements of systems • Increased ruggedness provides greater tolerance under demanding operating conditions and improves the reliability of the system • High voltage operation enhances the system performance and reduces the bias current load of power supplies and distribution network Description MACOM’s high power GaN power transistors optimized for avionics applications offer customers greater performance, flexibility and functionality through the benefits of GaN on SiC technology. A growing family of leading power GaN transistors offer high pulsed power operation of up to 600 W for Avionics applications in the 960-1215 MHz and 1030-1090 MHz bands. The GaN technology offers the customer higher power and efficiency operation in a similar size and footprint compared to LDMOS or Si Bipolar technologies. Furthermore, the inherent higher thermal performance and higher breakdown voltage of GaN benefit the customer with great flexibility in wider-band operation, increased power handling leading to longer pulse lengths and duty cycles and increased ruggedness under load mismatch conditions. Block Diagrams 960 - 1215 MHz Line-ups 2x MAGX-000912-125L00 MAGX-000912-500L00 500 W 32 dB gain MAGX-000035-01000P MAGX-000040-00500P 4x MAGX-000912-500L00 1750 W 32 dB gain MAGX-000035-05000P 250 W 32 dB gain Avionics Devices MAGX-000912-125L00 MAGX-000912-250L00 MAGX-000912-500L00 MAGX-000912-500L0S MAGX-001090-600L00 MAGX-000040-00500P MAGX-000035-01000P MAGX-000035-01000X MAGX-000035-015000 MAGX-000035-01500P MAGX-000035-01500S MAGX-000035-030000 MAGX-000035-045000 MAGX-000035-05000P MAGX-000035-09000P GaN brochure_final_for website.qxd:Layout 1 5/29/14 4:27 PM Page 5 ISM / Multi-Market MACOM—the first choice for GaN in communications, multi-market and ISM applications Features and Benefits • Broadband, unmatched transistors can be used for a variety of applications including communications, instrumentation and industrial, scientific and medical (ISM) • Very rugged–allows GaN transistors to withstand high VSWR mismatches during power on/start up and during operation without damaging the transistor • High voltage–reduces bias current load on power supply allowing for reduced cost power supplies • Excellent thermal performance–allows reduced heat sink costs for easier PCB designs • High RF gain and efficiency • MTTF of 600 years (channel temperature < 200°C) • EAR99 export classification Description As Gallium Nitride moves from its initial uses in Military and Radar applications to broader classes of products, MACOM is uniquely positioned to enable those markets. With more than a decade of GaN experience and the industry’s only dual source wafer fabrication agreement in place for GaN, MACOM satisfies many of the commercial requirements that have limited GaN penetration in broader markets. Packaging choices from ceramic flanged and flangeless to discrete plastic, including plastic laminate modules that enable traditional SMT PCB production techniques. The portfolio of 10, 14, 25, 30, 50, 100 W CW devices allows customers a wide set of options to build line ups for their ISM applications. Block Diagrams MRI X, Y, Z GRADIENT COILS RECEIVE COIL Small Cell GRADIENT AMPLIFIER x3 AMP LNA AMP TRANSMIT COIL FILTER ADC FREQUENCY SYNTHESIZER RF AMPLIFIER RF AMPLIFIER DAC DAC Driver Pout 1-5 W 10-20 W 10-20 W PROCESSORS AND DISPLAY CONTROLS ADC FILTER LNA TRANSMIT/ RECEIVE COIL GRADIENT TIMING AND CONTROL DAC TIMING AND WAVEFORM GENERATION Final Driver MMIC MAGX-000040-00500P MAGX-000035-01000X ISM Devices MAGX-000025-150000 MAGX-000035-01000X MAGX-000035-015000 MAGX-000035-01500S MAGX-000035-030000 MAGX-000035-045000 MAGX-000040-00500P MAGX-000245-014000 MAGX-000245-025000 Final MAGX-000035-01000X MAGX-000035-030000 MAGX-000035-030000 MACOM_PSG2014_080414_GaN pages_FINALmacom.qxd 8/4/14 3:05 PM Page 1 RF Power Products: GaN GaN on SiC RF Power Transistors: Pulsed Part Number MATR-GCHJ04-022050 Min Freq (MHz) Max Freq (MHz) Operating Voltage (V) Output Power (W) Min. Gain Pulse Duty Test Freq (dB) Width (µs) Cycle (%) (MHz) 1 4000 50 15 15 4000 50 50 60 11.3 18 3000 Package Size (mm) 10 1200-1400 Die (0.75 x 0.90 x 0.10) 1000 10 27 00 - 3500 1030 - 1090 Die (0.75 x 1.70 x 0.10) MATR-GCHJ04-066050 1 MAGX-000025-150000 1 2500 50 150 18 300 20 1200- 1400 MAGX-000040-00500P 1 4000 50 5 13 11 1000 3000 10 20 1600 4.5 x 4.0 x 1.5 MAGX-000035-01000P 1 3500 50 10 14.8 14 1000 3000 10 20 1600 6.0 x 3.0 x 0.9 MAGX-000035-01500P 1 3500 50 15 19.5 14.2 1000 3000 10 20 1600 2600 6.0 x 3.0 x 0.9 MAGX-000035-05000P 1 3500 50 50 18 17 1000 3000 10 1600 6.0 x 3.0 x 0.9 MAGX-000035-09000P 1 3500 50 90 17.5 16.6 1000 3000 10 1600 1300 6.0 x 3.0 x 0.9 MAGX-000035-015000 1 3500 50 15 15.5 15 1000 3000 10 20 12 00 - 1400 14.0 x 8.1 x 3.3 MAGX-000035-01500S 1 3500 50 15 15.5 15 1000 3000 10 20 12 00 - 1400 5.6 x 8.1 x 2.4 MAGX-000035-045000 1 3500 50 50 60 11.3 18 1000 10 27 00 - 3500 1030 - 1090 20.3 x 10.9 x 4.0 MAGX-000912-125L00 960 1215 50 125 20 128 10 20.3 x 15.0 x 4.1 MAGX-000912-250L00 960 1215 50 250 19 128 10 20.3 x 15.0 x 4.1 MAGX-000912-500L00 960 1215 50 500 19.8 128 10 34.0 x 19.4 x 3.7 MAGX-000912-500L0S 960 1215 50 500 19.8 128 10 20.6 x 19.4 x 3.7 MAGX-001090-600L00 1030 1090 50 600 21.4 32 2 34.0 x 19.4 x 3.7 MAGX-001090-600L0S 1030 1090 50 600 21.4 32 2 20.6 x 19.4 x 3.7 MAGX-001214-125L00 1200 1400 50 125 19 300 10 20.3 x 15.0 x 4.1 MAGX-001214-250L00 1200 1400 50 250 19 300 10 20.3 x 15.0 x 4.1 MAGX-001214-500L00 1200 1400 50 500 19.2 300 10 34.0 x 19.4 x 3.7 MAGX-001214-500L0S 1200 1400 50 500 19.2 300 10 20.6 x 19.4 x 3.7 MAGX-001214-650L00 1200 1400 50 650 19 300 10 20.6 x 19.4 x 3.7 MAGX-001220-100L00 1200 2000 50 100 14 300 10 20.3 x 10.9 x 4.0 MAGX-002731-100L00 2700 3100 50 100 12 500 10 20.3 x 10.9 x 4.0 MAGX-002731-180L00 2700 3100 50 180 11 300 10 20.3 x 10.9 x 4.0 MAGX-002731-180L0S 2700 3100 50 180 11 300 10 9.7 x 10.9 x 3.5 MAGX-003135-120L00 3100 3500 50 120 11.8 300 10 20.3 x 10.9 x 4.0 Test Freq (MHz) Package Size (mm) 29.0 x 17.8 x 4.8 GaN on SiC RF Power Transistors: CW Part Number Min Freq (MHz) Max Freq (MHz) Operating Voltage (V) Output Power (W) Min. Gain (dB) MATR-GCHJ04-022050 1 2450 MATR-GCHJ04-066050 1 2450 50 14 15.2 2450 Die (0.75 x 0.90 x 0.10) 28 25 12 2450 Die (0.75 x 1.70 x 0.10) MAGX-000245-014000 1 2450 MAGX-000245-025000 1 2450 50 14 15.2 2450 14.0 x 8.1 x 3.3 28 25 12 2450 MAGX-000035-01000P 1 20.3 x 10.9 x 4.0 3500 50 10 14.5 1650 MAGX-000035-010000 1 6.0 x 3.0 x 0.9 3500 50 10 19 1300 14.0 x 8.1 x 3.3 MAGX-000035-01000S 1 3500 50 10 19 1300 5.6 x 8.1 x 2.4 MAGX-000040-00500P 1 4000 50 4 10 2700 4.5 x 4.0 x 1.5 Note: Part numbers are RoHS compliant ◆ indicates non-RoHS compliant Detailed specifications can be found quickly on our website at macom.com by typing the part number into the search box. All specifications are subject to change. MACOM_PSG2014_080414_GaN pages_FINALmacom.qxd 8/4/14 3:05 PM Page 2 RF Power Products: GaN GaN on SiC Modules and Pallets Part Number Min Freq (MHz) Max Freq (MHz) Operating Voltage (V) Output Power (W) Min. Gain (dB) Pulse Width (µs) Duty Cycle (%) Package Size (mm) MAMG-000912-090PSM 960 1215 50 90 30 300 10 24.0 x 14.0 x 3.2 MAMG-001214-090PSM 1200 1400 45 90 30.5 1000 10 24.0 x 14.0 x 3.2 MAMG-002735-085PSM 2700 3500 50 85 23 23 1000 750 10 20 24.0 x 14.0 x 3.2 MAMG-002735-030PSM 2700 3500 50 30 25.5 20 1000 750 10 20 7.0 x 7.0 x 1.4 MAPG-002729-350L00 2700 2900 50 350 11.5 300 10 50.8 x 22.9 x 5.8 GaN Bias Modules Part Number Positive Supply VDS1 (V) Positive Supply VDS2 (V) Negative Supply VGS (V) Pulse Enable TTL (V) Positive Supply I DS1 (mA) Positive Supply I DS2 (mA) Negative Supply I G S (mA) Peak Output Gate I G C (mA) Open Drain ON/OFF Prop Delay (ns) Package Size (mm) MABC-001000-000DPM 10 to 60 N/A -8 to 0 0/ 3.3 2.3 N/A -3 50 100/ 70 22.5 x 6.5 x 5.0 MABC-001000-00SDPM 10 to 60 4.4 to 5.6 -8 to 0 0/ 3.3 0 2.2 -3 50 100/ 70 22.5 x 6.5 x 5.0 GaN on Si RF Power Transistors: CW Part Number Min Freq (MHz) Max Freq (MHz) Operating Voltage (V) NPA1006 30 1000 28 500 NPT1007 0 1200 28 900 NPA1003 20 1500 28 1000 5 18 12 4 x 4 mm QFN-16 NPT1010B 0 2000 28 900 100 20 1.4 AC360B-2 NPT2010 0 2200 48 2100 100 17 1.7 AC360B-2 NPT2022 0 2200 48 900 100 19 1.3 TO272-2 NPT2021 0 2500 48 2100 50 17 1.9 TO272-2 NPA1007 30 2500 28 2000 10 11 7 6 x 5 mm DFN-8 NPA1008 30 2700 28 2500 5 13 17 4 x 4 mm QFN-24 NPT25100B 0 2700 28 2500 90 16 1.8 AC780B-2 NPT1015B 0 3500 28 2500 45 14 2.1 AC360B-2 NPT2020 0 3500 48 2100 50 17 2.3 AC360B-2 AC780B-2 NPT35050AB Test Freq (MHz) Output Power PSAT (W) Small Signal Gain (dB) RTH (°C/W) 15 15 4.6 6 x 5 mm DFN-8 200 18 1.0 AC780B-4 Package 3300 3800 28 3500 50 13 2.0 NPT1012B 0 4000 28 3000 25 13 4.0 AC200B-2 NPTB00025B 0 4000 28 3000 25 13 5.3 AC200B-2 16NPTB00004D 0 6000 28 2500 5 17 23.0 NPTB00004A 0 6000 28 2500 5 17 15.0 SOIC-8 MAGX-011086 0 6000 28 2500 5 17 17.0 4 x 4 mm QFN-24 NPT2018 0 6000 48 2500 12.5. 17.5 6.5 3 x 6 mm DFN-14 Small Signal Gain (dB) RTH (°C/W) SOIC-8 GaN on Si RF Power Transistors: Linear Part Number Min Freq (MHz) Max Freq (MHz) Operating Voltage (V) NPT25015D 0 3000 28 2500 23* 14 6.3 SOIC-8 NPT1004D 0 3000 28 2500 45* 13 4.3 SOIC-8 NPT35015D 3000 4000 28 3500 18* 11 6.3 SOIC-8 0 6000 48 2500 25* 16 3.8 3 x 6 mm DFN-14 NPT2019 *Typical peak power in linear or pulse applications Test Freq (MHz) Output Power PSAT (W) Package GaN brochure_final_for website.qxd:Layout 1 5/29/14 4:27 PM Page 8 GaN Package Guide Package by Part Number Approximate Dimensions (mm) MAGX-000040-00500P 4.5 x 4.0 x 1.5 MAGX-000035-01000P MAGX-000035-01500P MAGX-000035-05000P MAGX-000035-09000P Package Type Approximate Dimensions (mm) QFN4x4-24 4.0 x 4.0 x 0.9 SOIC-8NE 4.9 x 6.1 x 1.47 DFN3x6-14 6.0 x 3.0 x 1.0 TO272-2 23.62 x 11.18 x 2.59 AC200B-2 13.97 x 8.13 x 3.1 AC360B-2 20.32 x 10.92 x 3.86 AC360P-2 9.65 x 10.92 x 3.86 AC780P-2 20.57 x 19.43 x 3.6 AC780B-2 34.04 x 19.43 x 3.6 AC780B-4 34.04 x 19.43 x 3.6 6.0 x 3.0 x 0.9 MAMG-001214-090PSM MAMG-000912-090PSM MAMG-002735-085PSM 24.0 x 14.0 x 3.2 MAGX-000035-01000S MAGX-000035-01500S 24.0 x 14.0 x 3.2 MAGX-000035-010000 MAGX-000245-014000 MAGX-000035-015000 13.97 x 8.12 x 3.25 MAGX-000035-045000 MAGX-000245-025000 MAGX-000245-050000 MAGX-000245-100000 MAGX-002731-180L00 20.32 x 10.92 x 3.99 MAGX-000025-150000 28.96 x 17.78 x 4.78 MAGX-000912-125L00 MAGX-000912-250L00 MAGX-001214-125L00 MAGX-001214-250L00 20.32 x 14.96 x 4.11 MAGX-001214-500L0S MAGX-000912-500L0S MAGX-001090-600L0S 20.57 x 19.44 x 3.74 MAGX-001214-500L00 MAGX-000912-500L00 MAGX-001090-600L00 34.04 x 19.44 x 3.74 MAGX-001090-1KW000 MAGX-000245-014000 MAGX-000035-015000 41.15 x 16.62 x 5.13 GaN brochure_Aug BC_Layout 1 8/4/14 3:33 PM Page 1 M/A-COM Technology Solutions Inc. Lowell, Massachusetts 01851 North America 800.366.2266 • Europe +353.21.244.6400 India +91-80-43537383 • China (Shanghai) +86.21.5108.6464 www.macom.com GaN-082014-rev1