NPT35015D

GaN Power Transistor, 28 V, 18 W 3.3 - 3.8 GHz NPT35015 Rev. V1 Features Functional Schematic • Optimized for CW, Pulsed, WiMAX, and other applications from 3.3 - 3.8 GHz • 18 W P3dB CW Power • 25 W P3dB Peak Envelope Power • 1.7 W Linear Power @ 2% EVM for single carrier OFDM, 10.3 dB peak/average, 10.3 dB @ 0.01% Probability on CCDF, 10.5 dB Gain, 18% Drain Efficiency • 100% RF tested • Thermally-Enhanced Surface Mount SOIC Package • High Reliability Gold Metallization Process • Subject to EAR99 Export Control • RoHS* Compliant Pin Configuration Applications • • • • • • Defense Communications Land Mobile Radio Avionics Wireless Infrastructure ISM VHF/UHF/L/S-Band Radar 1-4 Gate 5-8 Drain 9 Paddle1 1. The exposed pad centered on the package bottom must be connected to RF and DC ground. This path must also provide a low thermal resistance heat path. Description The NPT35015 GaN HEMT is a power transistor optimized for 3.3 - 3.5 GHz operation. This device supports CW, pulsed, and linear operation with output power levels to 18 W. This transistor is assembled in an industry standard surface mount plastic package. Ordering Information 1 Part Number Package NPT35015DT Tube (97 pieces) NPT35015DR 1500 piece reel * Restrictions on Hazardous Substances, compliant to current RoHS EU directive. MACOM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: https://www.macom.com/support DC-0008217 GaN Power Transistor, 28 V, 18 W 3.3 - 3.8 GHz NPT35015 Rev. V1 Typical 2-Tone RF Performance: (measured in test fixture) Freq. = 3.5 GHz, VDS = 28 V, IDQ = 200 mA, Tone Spacing = 1 MHz, TC = 25C Parameter Test Conditions Symbol Min. Typ. Max. Units Peak Envelope Power 3 dB Compression 1 dB Compression P3dB, PEP P1dB, PEP 14 — 18 10 — W Small Signal Gain — GSS 10 11 — dB Drain Efficiency 3 dB Compression ƞ 43 48 — % Typical RF Specifications (CW): (measured in Load Pull System) Freq. = 3.5 GHz, VDS = 28 V, IDQ = 200 mA, TC = 25C Parameter Test Conditions Symbol Min. Typ. Max. Units Average Output Power 3 dB Compression P3dB — 18 — W Small Signal Gain 3 dB Compression 1 dB Compression P3dB, Pulsed P1dB, Pulsed — 20 15 — W Typical OFDM Performance: (measured in load pull system, refer to Table 1 and Figure 1)) VDS = 28 V, IDQ = 200 mA, Single Carrier OFDM waveform 64-QAM 3/4, 8 burst, 20 ms frame, 15 ms frame data, 3.5 GHz channel bandwidth, Peak/Avg = 10.3 dB @ 0.01% probability on CCDF, POUT = 1.7 W avg., TC = 25°C Parameter Test Conditions Symbol Min. Typ. Max. Units Power Gain 3.3 - 3.8 GHz GP — 10.5 — dB Drain Efficiency 3.3 - 3.8 GHz ƞ — 18 — % Error Vector Magnitude 3.3 - 3.8 GHz EVM — 2 — % Input Return Loss 3.3 - 3.8 GHz IRL — 10 — dB Handling Procedures Please observe the following precautions to avoid damage: Static Sensitivity Gallium Nitride Circuits are sensitive to electrostatic discharge (ESD) and can be damaged by static electricity. Proper ESD control techniques should be used when handling these HBM Class 1A devices. 2 MACOM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: https://www.macom.com/support DC-0008217 GaN Power Transistor, 28 V, 18 W 3.3 - 3.8 GHz NPT35015 Rev. V1 DC Electrical Characteristics: TC = 25C Parameter Test Conditions Symbol Min. Typ. Max. Units Drain-Source Breakdown Voltage VGS = -8 V, ID = 8 mA VBDS 100 — — V Gate-Source Leakage Current VGS = -8 V, VDS = 60 V IDLK — — 4 mA Gate Threshold Voltage VDS = 28 V, ID = 8 mA VT -2.3 -1.8 -1.3 V Gate Quiescent Voltage VDS = 28 V, ID = 200 mA VGSQ -2.0 -1.5 -1.0 V On Resistance VGS = 2 V, ID = 60 mA RON — 0.45 0.50 Ω Drain Current VDS = 7 V pulsed, pulse width 300 µs 0.2% Duty Cycle, VGS = 2 V ID — 5 — A Off Characteristics On Characteristics Absolute Maximum Ratings2,3,4 Parameter Absolute Maximum Drain Source Voltage, VDS 100 V Gate Source Voltage, VGS -10 to 3 V Total Device Power Dissipation (derated above 25°C) 28 W Junction Temperature, TJ +200°C Operating Temperature -40°C to +85°C Storage Temperature -65°C to +150°C 2. Exceeding any one or combination of these limits may cause permanent damage to this device. 3. MACOM does not recommend sustained operation near these survivability limits. 4. Operating at nominal conditions with TJ ≤ 200°C will ensure MTTF > 1 x 106 hours. Thermal Characteristics5 Parameter Test Conditions Symbol Typical Units Thermal Resistance VDS = 28 V, TJ = 200°C RJC 6.25 °C/W 5. Junction temperature (TJ) measured using IR Microscopy. Case temperature measured using thermocouple embedded in heat-sink. 3 MACOM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: https://www.macom.com/support DC-0008217 GaN Power Transistor, 28 V, 18 W 3.3 - 3.8 GHz NPT35015 Rev. V1 Table 1: Optimum Impedance Characteristics for Single Carrier OFDM waveform 64-QAM 3/4, 8 burst, 20 ms frame, 15 ms frame data, 3.5 GHz Channel Bandwidth, Peak/Avg = 10.3 dB @ 0.01% probability on CCDF, 2% EVM. Frequency (MHz) ZS (Ω) ZL (Ω) POUT (W) Gain (dB) Drain Efficiency (%) 3300 5.4 - j10.3 2.9 - j2.5 1.7 10.9 19 3400 5.0 - j10.7 2.9 - j2.6 1.8 11.0 22 3500 4.4 - j11.2 2.8 - j2.7 1.7 10.9 21 3600 4.0 - j12.5 2.8 - j3.3 1.7 10.9 20 3700 3.5 - j13.4 3.0 - j3.8 1.8 10.8 20 3800 3.5 - j14.6 3.2 - j4.2 1.8 10.7 20 Impedance Reference ZS and ZL vs. Frequency Figure 1 - Optimum Impedance Characteristics for OFDM Tuning, VDS = 28 V, IDQ = 200 mA 4 MACOM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: https://www.macom.com/support DC-0008217 GaN Power Transistor, 28 V, 18 W 3.3 - 3.8 GHz NPT35015 Rev. V1 Load-Pull Data, Reference Plane at Device Leads: VDS = 28 V, IDQ = 200 mA (unless noted) 5 MACOM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: https://www.macom.com/support DC-0008217 GaN Power Transistor, 28 V, 18 W 3.3 - 3.8 GHz NPT35015 Rev. V1 Load-Pull Data, Reference Plane at Device Leads: 6 MACOM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: https://www.macom.com/support DC-0008217 GaN Power Transistor, 28 V, 18 W 3.3 - 3.8 GHz NPT35015 Rev. V1 AD-006 3.4 - 3.6 GHz, 1.7 W Linear WiMAX Application Board & Schematic 802.16e Single Carrier OFDM, 64-QAM 3/4, 8-burst, 20 ms frame 100% filled, 3.5 MHz channel bandwidth, PAR = 10.3 dB @ 0.01% CCDF VDS VGS + + C15 C1 C2 C3 C10 C9 C8 C7 C16 R2 R1 40 mils 600 mils C4 C6 C5 35 mils 520 mils RFOUT RFIN C11 C12 68 mils 80 mils 90 mils 490 mils 40 mils 340 mils 430 mils 175 mils 595 mils 240 mils 68 mils 240 mils NPT35015 C14 C13 Figure 9 - AD-006 Demonstration Board and Schematic 7 MACOM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: https://www.macom.com/support DC-0008217 GaN Power Transistor, 28 V, 18 W 3.3 - 3.8 GHz NPT35015 Rev. V1 Parts list Reference Value Tolerance Manufacturer Part Number C1 0.1 µF 10% Kemet C1206C104K1RACTU C2, C7 0.01 µF 10% AVX 12061C103KAT2A C3, C6 1000 pF 10% Kemet C0805C102K1RACTU C5 100 pF 10% Kemet C0805C101K1RACTU C8 1 µF 10% Panasonic ECJ-5YB2A105M C4, C9 - C11, C14 5.6 pF ±0.1 pF ATC ATC600F5R6B C12 0.3 pF ±0.1 pF ATC ATC600F0R3B C13 0.6 pF ±0.1 pF ATC ATC600F0R6B C15 150 µF 20% Nichicon UPW1C151MED C16 270 µF 20% United Chemi-Con ELXY630ELL271MK25S R1 10 Ω 1% Panasonic ERJ-2RKF10R0X R2 0.33 Ω 1% Panasonic ERJ-6RQFR33V PCB Rogers RO4350, r=3.5, t = 30 mils 8 MACOM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: https://www.macom.com/support DC-0008217 GaN Power Transistor, 28 V, 18 W 3.3 - 3.8 GHz NPT35015 Rev. V1 AD-006 3.4 - 3.6 GHz, 1.7 W Linear WiMAX Application Design 802.16e Single Carrier OFDM, 64-QAM 3/4, 8-burst, 20 ms frame 100% filled, 3.5 MHz channel bandwidth, PAR = 10.3 dB @ 0.01% CCDF 9 MACOM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: https://www.macom.com/support DC-0008217 GaN Power Transistor, 28 V, 18 W 3.3 - 3.8 GHz NPT35015 Rev. V1 AD-006 3.4 - 3.6 GHz, 1.7 W Linear WiMAX Application Design 802.16e Single Carrier OFDM, 64-QAM 3/4, 8-burst, 20 ms frame 100% filled, 3.5 MHz channel bandwidth, PAR = 10.3 dB @ 0.01% CCDF 10 MACOM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: https://www.macom.com/support DC-0008217 GaN Power Transistor, 28 V, 18 W 3.3 - 3.8 GHz NPT35015 Rev. V1 Mounting Footprint Package Dimensions and Pin out† Dim. Millimeters Min. Max. Min. Max. A 0.189 0.196 4.80 4.98 B 0.150 0.157 3.81 3.99 C 0.107 0.123 2.72 3.12 D 0.071 0.870 1.870 2.21 E 0.230 0.244 5.85 6.19 f † Inches 0.050 BSC 1.270 BSC F 0.0138 0.0192 0.35 0.49 G 0.055 0.061 1.40 1.55 G1 0.000 0.004 0.00 0.10 H 0.075 0.098 1.91 2.50 L 0.016 0.035 0.41 0.89 m 0° 8° 0° 8° Meets JEDEC moisture sensitivity level 3 requirements. Plating is Matte Sn. 11 MACOM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: https://www.macom.com/support DC-0008217 GaN Power Transistor, 28 V, 18 W 3.3 - 3.8 GHz NPT35015 Rev. V1 MACOM Technology Solutions Inc. (“MACOM”). All rights reserved. These materials are provided in connection with MACOM’s products as a service to its customers and may be used for informational purposes only. Except as provided in its Terms and Conditions of Sale or any separate agreement, MACOM assumes no liability or responsibility whatsoever, including for (i) errors or omissions in these materials; (ii) failure to update these materials; or (iii) conflicts or incompatibilities arising from future changes to specifications and product descriptions, which MACOM may make at any time, without notice. These materials grant no license, express or implied, to any intellectual property rights. THESE MATERIALS ARE PROVIDED "AS IS" WITH NO WARRANTY OR LIABILITY, EXPRESS OR IMPLIED, RELATING TO SALE AND/OR USE OF MACOM PRODUCTS INCLUDING FITNESS FOR A PARTICULAR PURPOSE, MERCHANTABILITY, INFRINGEMENT OF INTELLECTUAL PROPERTY RIGHT, ACCURACY OR COMPLETENESS, OR SPECIAL, INDIRECT, INCIDENTAL, OR CONSEQUENTIAL DAMAGES WHICH MAY RESULT FROM USE OF THESE MATERIALS. MACOM products are not intended for use in medical, lifesaving or life sustaining applications. MACOM customers using or selling MACOM products for use in such applications do so at their own risk and agree to fully indemnify MACOM for any damages resulting from such improper use or sale. 12 MACOM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: https://www.macom.com/support DC-0008217