NPTB00004A

GaN Power Transistor, 28 V, 5 W DC - 6 GHz NPTB00004A Rev. V2 Functional Schematic Features GaN on Si HEMT D-Mode Transistor Suitable for linear and saturated applications Tunable from DC - 6 GHz 28 V Operation 14.8 dB Gain @ 2.5 GHz 57 % Drain Efficiency @ 2.5 GHz 100 % RF Tested Industry standard SOIC plastic package RoHS* Compliant N/C 1 8 N/C RFIN / VG 2 7 RFOUT / VD RFIN / VG 3 6 RFOUT / VD N/C 4 5 N/C Applications • • • • • • Defense Communications Land Mobile Radio Avionics Wireless Infrastructure ISM VHF/UHF/L/S-Band Radar 6 • • • • • • • • • 9 Paddle Pin Configuration Description The NPTB00004A GaN HEMT is a power transistor optimized for DC - 6 GHz operation. This device supports CW, pulsed, and linear operation with output power levels to 5 W (37 dBm) in an industry standard surface mount plastic package. 1, 4, 5, 8 N/C No Connection 2, 3 RFIN / VG RF Input / Gate 6, 7 RFOUT / VD RF Output / Drain 9 Paddle1 Ground / Source 1. The exposed pad centered on the package bottom must be connected to RF and DC ground. This path must also provide a low thermal resistance heat path. Ordering Information 1 Part Number Package NPTB00004A bulk quantity NPTB00004A-SMB sample board * Restrictions on Hazardous Substances, compliant to current RoHS EU directive. MACOM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: https://www.macom.com/support DC-0006406 GaN Power Transistor, 28 V, 5 W DC - 6 GHz NPTB00004A Rev. V2 RF Electrical Specifications: TC = 25C, VDS = 28 V, IDQ = 50 mA Parameter Test Conditions Symbol Min. Typ. Max. Units Small Signal Gain CW, 2.5 GHz GSS - 16 - dB Saturated Output Power CW, 2.5 GHz PSAT - 37.1 - dBm Drain Efficiency at Saturation CW, 2.5 GHz SAT - 63.7 - % Power Gain 2.5 GHz, POUT = 4 W GP 12.8 14.8 - dB Drain Efficiency 2.5 GHz, POUT = 4 W  45 57 - % Ruggedness: Output Mismatch All phase angles  VSWR = 15:1, No Device Damage DC Electrical Characteristics: TC = 25C Parameter Test Conditions Symbol Min. Typ. Max. Units Drain-Source Leakage Current VGS = -8 V, VDS = 100 V IDLK - - 2 mA Gate-Source Leakage Current VGS = -8 V, VDS = 0 V IGLK - - 1 mA Gate Threshold Voltage VDS = 28 V, ID = 2 mA VT -2.5 -1.6 -0.5 V Gate Quiescent Voltage VDS = 28 V, ID = 50 mA VGSQ -2.1 -1.3 -0.3 V On Resistance VDS = 2 V, ID = 15 mA RON - 1.6 -  Maximum Drain Current VDS = 7 V pulsed, pulse width 300 µs ID,MAX - 1.4 - A 2 MACOM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: https://www.macom.com/support DC-0006406 GaN Power Transistor, 28 V, 5 W DC - 6 GHz NPTB00004A Rev. V2 Absolute Maximum Ratings2,3,4 Parameter Absolute Maximum Drain Source Voltage, VDS 100 V Gate Source Voltage, VGS -10 to 3 V Gate Current, IG 4 mA Junction Temperature, TJ +200°C Operating Temperature -40°C to +85°C Storage Temperature -65°C to +150°C 2. Exceeding any one or combination of these limits may cause permanent damage to this device. 3. MACOM does not recommend sustained operation near these survivability limits. 4. Operating at nominal conditions with TJ ≤ 200°C will ensure MTTF > 1 x 106 hours. Thermal Characteristics5 Parameter Test Conditions Symbol Typical Units Thermal Resistance VDS = 28 V, TJ = 180°C RJC 15 °C/W 5. Junction temperature (TJ) measured using IR Microscopy. Case temperature measured using thermocouple embedded in heat-sink. Handling Procedures Please observe the following precautions to avoid damage: Static Sensitivity Gallium Nitride Circuits are sensitive to electrostatic discharge (ESD) and can be damaged by static electricity. Proper ESD control techniques should be used when handling these HBM Class 1A devices. 3 MACOM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: https://www.macom.com/support DC-0006406 GaN Power Transistor, 28 V, 5 W DC - 6 GHz NPTB00004A Rev. V2 Load-Pull Performance: VDS = 28 V, IDQ = 50 mA, TC = 25°C Reference Plane at Device Leads, CW Drain Efficiency and Output Power Tradeoff Impedance Frequency (MHz) ZS (Ω) ZL (Ω) PSAT (W) GSS (dB) Drain Efficiency @ PSAT (%) 900 6.1 + j15 72 + j36 7.0 23.0 68 2200 5.0 - j5.0 14 + j17 6.7 19.0 66 2700 5.0 - j10 13 + j12 6.7 17.0 62 5800 10 - j60 14 - j34 6.5 11.0 52 Impedance Reference ZS and ZL vs. Frequency ZL ZS Gain vs. Output Power Drain Efficiency vs. Output Power 25 70 60 15 10 5 15 4 Drain Efficiency (%) Gain (dB) 20 900MHz 2200MHz 2700MHz 5800MHz 20 50 900MHz 2200MHz 2700MHz 5800MHz 40 30 20 10 25 30 POUT (dBm) 35 40 0 15 20 25 30 35 40 POUT (dBm) MACOM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: https://www.macom.com/support DC-0006406 GaN Power Transistor, 28 V, 5 W DC - 6 GHz NPTB00004A Rev. V2 Evaluation Board and Recommended Tuning Solution 2.5 GHz Narrowband Circuit VGS VDS C2 0.1 mF C1 1.0 mF C3 0.01 mF C4 1000 pF C5 100 mF R2 0.033  C9 1000 pF C10 33 pF C8 0.01 mF C11 33 pF C6 1.0 mF C7 0.1 mF R1 200  RFOUT NPTB00004A RFIN C12 2.4 pF C14 3.3 pF C15 1.5 pF C13 2.7 pF Description Bias Sequencing Parts measured on evaluation board (20-mil thick RO4350). The PCB’s electrical and thermal ground is provided using a standard-plated densely packed via hole array (see recommended via pattern). Turning the device ON Matching is provided using a combination of lumped elements and transmission lines as shown in the simplified schematic above. Recommended tuning solution component placement, transmission lines, and details are shown on the next page. 1. Set VGS to the pinch-off (VP), typically -5 V. 2. Turn on VDS to nominal voltage (28 V). 3. Increase VGS until the IDS current is reached. 4. Apply RF power to desired level. Turning the device OFF 1. Turn the RF power off. 2. Decrease VGS down to VP. 3. Decrease VDS down to 0 V. 4. Turn off VGS. Recommended Via Pattern (All dimensions shown as inches) 5 MACOM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: https://www.macom.com/support DC-0006406 GaN Power Transistor, 28 V, 5 W DC - 6 GHz NPTB00004A Rev. V2 Evaluation Board and Recommended Tuning Solution 2.5 GHz Narrowband Circuit Parts list 6 Reference Value Tolerance Manufacturer Part Number C1, C6 1.0 µF 10% AVX 12101C105KAT2A C2, C7 0.1 µF 10% Murata GRM188R72A104KA35D C3, C8 0.01 µF 10% AVX 06031C103KAT2A C4, C9 1000 pF 10% AVX 06031C102KAT2A C5 100 µF 20% Panasonic ECE-V1JA101P C10, C11 33 pF 5% ATC ATC600F330JT C12 2.4 pF 5% ATC ATC600F2R4JT C13 2.7 pF 5% ATC ATC600F2R7JT C14 3.3 pF 5% ATC ATC600F3R3JT C15 1.5 pF 5% ATC ATC600F1R5JT R1 200 Ω 5% Panasonic ERJ-2GEJ201X R2 0.33 Ω 1% Susumu RL1220S-R33-F PCB Rogers RO4350, r = 3.5, 20 mil MACOM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: https://www.macom.com/support DC-0006406 GaN Power Transistor, 28 V, 5 W DC - 6 GHz NPTB00004A Rev. V2 Typical Performance as measured in the 2.5 GHz evaluation board: CW, VDS = 28 V, IDQ = 50 mA (unless noted) Gain vs. Output Power over Temperature Drain Efficiency vs. Output Power over Temperature 18 60 17 Drain Efficiency (%) Gain (dB) 16 15 14 13 12 11 15 +25°C -40°C +85°C 50 +25°C -40°C +85°C 20 40 30 20 10 25 30 35 0 15 40 20 25 POUT (dBm) 30 35 40 POUT (dBm) Quiescent VGS vs. Temperature -1.1 VGSQ (V) -1.2 -1.3 -1.4 -1.5 -50 25mA 50mA 75mA -25 0 25 50 75 100 o Temperature ( C) 7 MACOM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: https://www.macom.com/support DC-0006406 GaN Power Transistor, 28 V, 5 W DC - 6 GHz NPTB00004A Rev. V2 Typical 2-Tone Performance as measured in the 2.5 GHz evaluation board: 1 MHz Tone Spacing, VDS = 28 V, IDQ = 50 mA, TC = 25°C (unless noted) 2-Tone Gain vs. Output Power vs. Quiescent Current -15 18.0 -20 17.0 -25 16.0 Gain (dB) IMD (dBc) 2-Tone IMD3 vs. Output Power vs. Quiescent Current -30 17mA -35 25mA 15.0 14.0 50mA -40 100mA 1 25mA 50mA 13.0 75mA -45 0.1 17mA 75mA 100mA 12.0 0.1 10 1 POUT (W-PEP) 10 POUT (W-PEP) 2-Tone IMD vs. Output Power -10 IMD (dBc) -20 -IMD3 +IMD3 -IMD5 +IMD5 -IMD7 +IMD7 -30 -40 -50 -60 0.1 1 10 POUT (W-PEP) 8 MACOM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: https://www.macom.com/support DC-0006406 GaN Power Transistor, 28 V, 5 W DC - 6 GHz NPTB00004A Rev. V2 Evaluation Board and Recommended Tuning Solution 100-800 MHz BroadBand Circuit Parts list 9 Reference Value Tolerance Manufacturer Part Number C1, C8 1.0 µF 10% AVX 12101C105KAT2A C2, C7 0.1 µF 10% Murata GRM188R72A104KA35D C3, C6, C10 0.01 µF 10% AVX 06031C103KAT2A C4, C5, 1000 pF 10% AVX 06031C102KAT2A C9 100 µF 20% Panasonic ECE-V1JA101P C11, C14 240 pF 0.1 pF ATC ATC600F241F C12 10 pF 0.1 pF ATC ATC600F100B C13, C15 1.5 pF 5% ATC ATC600F1R5J F1 Material 73 - Fair-Rite 2673000801 L1 100 nH 5% Coilcraft 0805CS-101XJ L2 100 nH 5% Coilcraft 1812SMS-R10 L3, L5 5 nH 10% Coilcraft A02TKLJ L4 2.5 nH 10% Coilcraft A01TKLJ R1 300 Ω 5% Panasonic ERJ-14YJ301U R2 0.33 Ω 1% Susumu RL1220S-R33-F R3 470 Ω 1% Stackpole RHC2512FT470R R4 10 Ω 5% Panasonic ERJ-14YJ100U PCB Rogers RO4350, r=3.5, 0.020” MACOM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: https://www.macom.com/support DC-0006406 GaN Power Transistor, 28 V, 5 W DC - 6 GHz NPTB00004A Rev. V2 Evaluation Board and Recommended Tuning Solution 100-800 MHz BroadBand Circuit VGS VDS C2 0.1 mF C1 1.0 mF C3 0.01 mF C4 1000 pF L1 100 nH F1 R1 300  L2 100 nH R3 470  C10 0.01 mF C5 1000 pF R2 0.33  C6 0.01 mF L4 2.5 nH C9 100 mF C8 1.0 mF C7 0.1 mF L5 5.0 nH RFOUT L3 5.0 nH RFIN C13 1.5 pF NPTB00004A R4 10  C14 240 pF C15 1.5 pF C11 240 pF C12 10 pF 20 50 15 45 10 40 Gain 5 35 Drain Eff PSAT 0 100 200 300 400 500 600 700 30 45 25 40 20 35 15 30 10 25 Gain Drain Eff 30 800 5 100 200 300 Frequency (MHz) 500 600 20 800 700 15 40 14 30 13 20 Gain Drain Eff 10 30 0 25 -10 20 -20 15 s11, s22 (dB) 50 s21 (dB) Small Signal s-parameters vs Frequency 16 Drain Efficiency (%) Gain (dB) 400 Frequency (MHz) Performance vs Output Power (f = 600 MHz) 12 Drain Efficiency (%) 55 Gain (dB) Performance vs. Frequency at POUT = 36 dBm 25 PSAT (dBm), Drain Efficiency (%) Gain (dB) Performance vs. Frequency at POUT= PSAT -30 s21 s11 s22 11 15 10 20 25 30 POUT (dBm) 35 0 40 10 100 200 300 400 500 600 -40 800 700 Frequency (MHz) MACOM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: https://www.macom.com/support DC-0006406 GaN Power Transistor, 28 V, 5 W DC - 6 GHz NPTB00004A Rev. V2 SOIC 8-Lead Plastic Package† All dimensions shown as inches [millimeters]. † Meets JEDEC moisture sensitivity level 3 requirements. Plating is Matte Sn. 11 MACOM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: https://www.macom.com/support DC-0006406 GaN Power Transistor, 28 V, 5 W DC - 6 GHz NPTB00004A Rev. V2 MACOM Technology Solutions Inc. (“MACOM”). All rights reserved. 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