PH3135-20M

PH3135-20M Radar Pulsed Power Transistor 20W, 3.1-3.5 GHz, 100µs Pulse, 10% Duty Rev. V1 Outline Drawing Features          NPN silicon microwave power transistors Common base configuration Broadband Class C operation High efficiency inter-digitized geometry Diffused emitter ballasting resistors Gold metallization system Internal input and output impedance matching Hermetic metal/ceramic package RoHS compliant Absolute Maximum Ratings at 25°C Symbol Rating Units Collector-Emitter Voltage Parameter VCES 65 V Emitter-Base Voltage VEBO 3.0 V Collector Current (Peak) IC 2.4 A Power Dissipation @ +25°C PTOT 200 W Storage Temperature TSTG -65 to +200 °C Junction Temperature TJ 200 °C Electrical Specifications: TC = 25 ± 5°C (Room Ambient ) Parameter Test Conditions Frequency Collector-Emitter Breakdown Voltage IC = 10mA Symbol Min Max Units BVCES 65 - V ICES - 1.5 mA Collector-Emitter Leakage Current VCE = 40V Thermal Resistance Vcc = 36V, Pout = 20W F = 3.1, 3.3, 3.5 GHz RTH(JC) - 1.1 °C/W Output Power Vcc = 36V, Pout = 20W F = 3.1, 3.3, 3.5 GHz PIN - 3.6 W Power Gain Vcc = 36V, Pout = 20W F = 3.1, 3.3, 3.5 GHz GP 7.5 - dB Collector Efficiency Vcc = 36V, Pout = 20W F = 3.1, 3.3, 3.5 GHz C 35 - % Input Return Loss Vcc = 36V, Pout = 20W F = 3.1, 3.3, 3.5 GHz RL - -6 dB Load Mismatch Tolerance Vcc = 36V, Pout = 20W F = 3.1, 3.3, 3.5 GHz VSWR-T - 2:1 - 1 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: https://www.macom.com/support PH3135-20M Radar Pulsed Power Transistor 20W, 3.1-3.5 GHz, 100µs Pulse, 10% Duty Rev. V1 Typical RF Performance Freq. (GHz) Pin (W) Pout (W) Gain (dB) Ic (A) Eff (%) RL (dB) VSWR-T (2:1) 3.1 2.4 20 9.19 1.29 43.1 -10.2 P 3.3 2.7 20 8.65 1.28 43.4 -10.9 P 3.5 3.0 20 8.30 1.28 43.4 -13.0 P Collector Efficiency vs. Frequency 9.5 50 9.0 45 Efficiency (%) Gain (dB) Gain vs. Frequency 8.5 8.0 7.5 40 35 30 3.1 3.2 3.3 3.4 Freq (GHz) 3.5 3.1 3.2 3.3 3.4 Freq (GHz) RF Test Fixture Impedance F (GHz) ZIF (Ω) ZOF (Ω) 3.1 16.0 + j5.5 19.0 + j3.4 3.3 14.5 + j1.6 14.2 - j2.8 3.5 11.3 + j0.0 10.7 - j3.3 2 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: https://www.macom.com/support 3.5 PH3135-20M Radar Pulsed Power Transistor 20W, 3.1-3.5 GHz, 100µs Pulse, 10% Duty Rev. V1 Test Fixture Circuit Dimensions Test Fixture Assembly 3 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: https://www.macom.com/support PH3135-20M Radar Pulsed Power Transistor 20W, 3.1-3.5 GHz, 100µs Pulse, 10% Duty Rev. V1 M/A-COM Technology Solutions Inc. All rights reserved. Information in this document is provided in connection with M/A-COM Technology Solutions Inc ("MACOM") products. 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