Silicon Step Recovery Diodes
MMDx & SMMDx Series
Rev. V4
Features
• Output Combs to 40+ GHz
• Transition Times down to 35 ps
• Screening per MIL-PRF-19500 and MIL-PRF38534 available
Plastic SMT w/leads
Description
The diodes feature fully passivated, true mesa
construction for sharp transitions and improved
stability. The beam lead SRDs have the industry’s
fastest transition times for millimeter wave
multiplication and picoseconds pulse forming.
Chip & Beam Lead Electrical Specifications: T A = 25°C
Model
Voltage
Breakdown
(VB)
Junction
Capacitance
(CJ)
Lifetime
(t)
Transition
Time
(tt)
Frequency
Cutoff
(FCO)
Theta
(θJC)
V
pF
ns
ps
GHz
°C/W
Min.
Min.
Max.
Min.
Typ.
Typ.
Max.
Typ.
Max.
MMD805-C12
60
2.5
3.5
80
100
250
300
130
15
MMD810-C12
50
1.5
2.5
40
70
200
250
200
22
MMD820-C12
40
1.0
1.7
30
60
80
100
390
25
MMD830-C11
25
0.5
1.0
15
30
60
80
700
45
MMD832-C11
20
0.4
0.8
10
15
60
80
660
50
MMD835-C11
15
0.3
0.7
10
20
60
70
800
60
MMD837-C11
20
0.2
0.4
5
10
60
70
1300
60
MMD840-C11
15
0.2
0.4
7
15
60
70
880
60
MMDB30-B11
14
0.15
0.25
1
4
30
38
530
600
MMDB35-B11
16
0.13
0.20
1
4
35
45
482
600
MMDB45-B11
25
0.11
0.20
3
8
45
58
410
600
Chip
Beam Lead
Test Conditions:
VB: IR = 10 µA
CJ: VR = 6 V, 1 MHz
t: IF = 10 mA, IR = 6 mA @ 50% Recovery
tt: for Chip: IF = 10 mA, VR = 10 V
tt: for Beam Lead: IF = 3 mA, VR = 7 V
FCO: 1/2πRS
1
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For further information and support please visit:
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DC-0012557
Silicon Step Recovery Diodes
MMDx & SMMDx Series
Rev. V4
Absolute Maximum Ratings
Parameters
Rating
Reverse Voltage
Rated VBR
Forward Current
Chip = 150 mA
Beam Lead = 50 mA
CW Power Dissipation
150°C / θJC @ +25°C,
derate linearly to zero @ THSK = +175°C
Operating / Storage Temperature
-65°C to +175°C
Mounting / Bonding Temperature
Chip = +310°C for 30 seconds
Beam Lead = +235°C for 10 seconds
Chip & Beam Lead Outline Drawings
2
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DC-0012557
Silicon Step Recovery Diodes
MMDx & SMMDx Series
Rev. V4
Ceramic Packaged Electrical Specifications: T A = 25°C
Model
Voltage
Breakdown
(VB)
Total
Capacitance
(CT)
Lifetime
(t)
V
pF
ns
Min.
MMD805-
MMD810-
MMD820-
MMD830-
MMD832-
MMD835-
60
50
40
25
20
15
3
Package
ps
Min.
Max.
2.57
3.57
E25
2.58
3.58
E28 / 28X
2.68
3.68
2.68
3.68
2.75
3.75
T89
2.56
3.56
0805-2
1.58
2.58
E28 / 28X
1.68
2.68
1.68
2.68
1.75
2.75
T89
1.08
1.78
E28 / 28X
1.18
1.88
1.18
1.88
1.06
1.76
0805-2
0.58
1.08
E28 / 28X
0.68
1.18
0.68
1.18
0.56
1.06
0805-2
0.48
0.88
E28 / 28X
0.58
0.98
0.58
0.98
0.46
0.86
0805-2
0.38
0.88
E28 / 28X
0.42
0.92
0.48
0.98
0.36
0.86
Test Conditions:
VB: IR = 10 µA
CT: VR = 6 V, 1 MHz
t: IF = 10 mA, IR = 6 mA @ 50% Recovery
tt: for MMD805 - MMD840: IF = 10 mA, VR = 10 V
tt: for MMDB30 - MMDB45: IF = 3 mA, VR = 7 V
Min.
Transition
Time
(tt)
80
40
30
15
10
10
Typ.
100
70
60
30
15
20
Typ.
250
200
80
60
60
50
Max.
300
250
100
80
80
70
H20
T86
H20
T86
H20
T86
H20
T86
H20
T86
H20
T86
0805-2
(Continued next page)
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For further information and support please visit:
https://www.macom.com/support
DC-0012557
Silicon Step Recovery Diodes
MMDx & SMMDx Series
Rev. V4
Ceramic Packaged Electrical Specifications: T A = 25°C
Model
Voltage
Breakdown
(VB)
Total
Capacitance
(CT)
Lifetime
(t)
V
pF
ns
Min.
MMD837-
MMD840-
MMDB30-
MMDB35-
MMDB45-
20
15
14
16
25
Min.
Transition
Time
(tt)
Package
ps
Min.
Max.
Typ.
Typ.
Max.
0.28
0.48
0.32
0.52
0.38
0.58
0.26
0.46
805-2
0.28
0.48
E28 / 28X
0.32
0.52
0.38
0.58
0.26
0.46
0805-2
0.23
0.33
E28 / 28X
0.20
0.30
0.21
0.31
0805-2
0.21
0.28
E28 / 28X
0.18
0.22
0.19
0.26
0805-2
0.19
0.28
E28 / 28X
0.16
0.25
0.17
0.26
E28 / 28X
5
7
1
1
3
10
15
4
4
8
50
50
30
35
45
70
70
38
45
58
H27
T86
H27
T86
0402
0402
0402
0805-2
Test Conditions:
VB: IR = 10 µA
CT: VR = 6 V, 1 MHz
t: IF = 10 mA, IR = 6 mA @ 50% Recovery
tt: for MMD805 - MMD840: IF = 10 mA, VR = 10 V
tt: for MMDB30 - MMDB45: IF = 3 mA, VR = 7 V
Absolute Maximum Ratings
Parameters
Rating
Reverse Voltage
Rated VBR
Forward Current
MMD = 150 mA
MMDB = 50 mA
Operating / Storage Temperature
-65°C to +175°C
Mounting / Bonding Temperature
+260°C peak per JEDEC J-STD-20C
4
MACOM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support
DC-0012557
Silicon Step Recovery Diodes
MMDx & SMMDx Series
Rev. V4
Ceramic Outline Drawings: Dimension = mils (mm)
E25
E25
Capacitance (CP) = 0.07 pF
Inductance (LP) = 0.4 nH
E28X
Capacitance (CP) = 0.08 pF
Inductance (LP) = 0.4 nH
Capacitance (CP) = 0.08 pF
Inductance (LP) = 0.4 nH
H20
Capacitance (CP) = 0.18 pF
Inductance (LP) = 0.5 nH
H27
5
Capacitance (CP) = 0.12 pF
Inductance (LP) = 0.4 nH
(Continued next page)
MACOM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support
DC-0012557
Silicon Step Recovery Diodes
MMDx & SMMDx Series
Rev. V4
Ceramic Outline Drawings: Dimension = mils (mm)
T86
T89
Capacitance (CP) = 0.18 pF
Inductance (LP) = 1.0 nH
0402
Capacitance (CP) = 0.05 pF
Inductance (LP) = 0.2 nH
Capacitance (CP) = 0.25 pF
Inductance (LP) = 0.4 nH
0805-2
Capacitance (CP) = 0.06 pF
Inductance (LP) = 0.4 nH
6
MACOM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
For further information and support please visit:
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DC-0012557
Silicon Step Recovery Diodes
MMDx & SMMDx Series
Rev. V4
Glass Packaged Electrical Specifications: T A = 25°C
Model #
(-package)
Voltage
Breakdown
(VB)
Total
Capacitance
(CT)
Lifetime
(t)
V
pF
ns
Transition
Time
(tt)
Package
ps
Min.
Typ.
Max.
Min.
Typ.
Typ.
Max.
MMD0151-
15
0.70
0.80
10
15
100
—
MMD0153-
25
0.45
0.55
10
15
95
—
MMD0803-
70
4.15
6.15
200
250
275
400
MMD0815-
50
3.15
4.15
100
135
180
320
MMD0825-
45
1.15
2.15
30
50
130
160
MMD0833-
25
1.75
1.80
10
15
90
—
MMD0840-
15
0.60
0.75
10
20
75
—
A15
Test Conditions:
VB: IR = 10 µA
CT: for MMD0151 & MMD0153: VR = 6 V, 1 MHz
CT: for MMD0803 - MMD0840: VR = 10 V, 1 MHz
t: IF = 10 mA, IR = 6 mA @ 50% Recovery
tt: for MMD0803 - MMD0825: IF = 10 mA, VR = 10 V
tt: for MMD0151, MMD0153, MMD0833, MMD0840: chip data packaged limits to 100 ps
Absolute Maximum Ratings
Parameters
Rating
Reverse Voltage
Rated VBR
Forward Current
100 mA
Thermal Resistance, Junction to Case
+600°C/W
Operating / Storage Temperature
-65°C to +200°C
Mounting / Bonding Temperature
+230°C for 10 seconds
Glass Outline Drawing
Capacitance (CP) = 0.15 pF
Inductance (LP) = 2.5 nH
7
MACOM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support
DC-0012557
Silicon Step Recovery Diodes
MMDx & SMMDx Series
Rev. V4
Plastic Packaged Electrical Specifications: T A = 25°C
Model
SMMD805-
Voltage
Breakdown
(VB)
Junction
Capacitance
(CJ)
Lifetime
(t)
Transition
Time
(tt)
V
pF
ns
ps
Min.
Min.
Max.
Min.
Typ.
Typ.
Max.
60
2.5
3.5
80
100
250
300
Package
SOT23 (-0S, -1S)
SOD323
SMMD810-
50
1.5
2.5
40
70
200
250
SMMD820-
40
1.0
1.7
30
60
110
125
SMMD830-
25
0.5
1.0
15
30
90
110
SOT23 (-0S, -1S)
SOD323
SOT23 (-0S, -1S)
SOD323
SOT23 (-0S, -1S)
SOD323
SOT23 (-0S, -1S)
SMMD832-
20
0.4
0.8
10
20
85
100
SOD323
SC79 (SOD523)*
SMMD835-
20
0.3
0.7
10
15
80
100
SMMD837-
20
0.2
0.4
5
12
75
90
SMMD840-
15
0.2
0.4
5
10
70
90
SOT23 (-0S, -1S)
SOD323
SOT23 (-0S, -1S)
SOD323
SOT23 (-0S, -1S)
SOD323
Test Conditions:
VB: IR = 10 µA
CJ: VR = 6 V, 1 MHz
t: IF = 10 mA, IR = 6 mA @ 50% Recovery
* MAVR-011057-12790T
VB: IR @ 10 µA = 20 V min.
Ct: VR @ 6 V, 1 MHz = 0.75 pF max.
Tl : If @ 10 mA, IR @ 6 mA @ 50% Recovery = 10 ns typ.
Absolute Maximum Ratings
8
Parameters
Rating
Reverse Voltage
Rated VBR
Forward Current
100 mA
Power Dissipation
250 mW, derate linearly to zero @ TA = +150°C
Operating / Storage Temperature
-65°C to +150°C
Mounting / Bonding Temperature
+260°C peak per JEDEC J-STD-20C
MACOM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support
DC-0012557
Silicon Step Recovery Diodes
MMDx & SMMDx Series
Rev. V4
Plastic Outline Drawings
SC-79 (SOD523)
9
MACOM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
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DC-0012557
Silicon Step Recovery Diodes
MMDx & SMMDx Series
Rev. V4
Typical Performance Curves: T A = 25°C
Transition Time vs. Drive
Transition Time vs. Forward Current
Transition Time Test Circuit
10
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DC-0012557
Silicon Step Recovery Diodes
MMDx & SMMDx Series
Rev. V4
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11
MACOM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
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For further information and support please visit:
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DC-0012557
Mouser Electronics
Authorized Distributor
Click to View Pricing, Inventory, Delivery & Lifecycle Information:
MACOM:
MMDB45-0805 MMD820-C12 MMD830-E28 MMDB30-0402 MMDB35-0402 MMD830-0805 MMD835-0805
MMDB30-E28X MMD837-T86 MMDB45-0402 MMDB45-B11 MMD805-C12 MMD820-E28 MMD820-T86 MMD830T86 MMD832-0805 MMD835-E28 MMD805-0805 MMD805-E25 MMD820-0805 MMD835-E25R MMD840-0805
MMDB30-0805 MMD0815 MMD837-C12 MMD840-C12 MMD840-E28X MMDB30-B11 MMDB35-B11