UF2820P

UF2820P RF Power MOSFET Transistor 20W, 100-500 MHz, 28V Rev. V1 Package Outline Features      N-channel enhancement mode device DMOS structure Lower capacitances for broadband operation Common source configuration Lower noise floor ABSOLUTE MAXIMUM RATINGS AT 25° C Symbol Rating Units Drain-Source Voltage Parameter VDS 65 V Gate-Source Voltage VGS 20 V Drain-Source Current IDS 2.8 A Power Dissipation PD 53 W Junction Temperature TJ 200 °C Storage Temperature TSTG -55 to 150 °C Thermal Resistance θJC 3.3 °C/W TYPICAL DEVICE IMPEDANCES F (MHz) ZIN (Ω) ZLOAD (Ω) 100 9.5-j60.0 4.0+j68.0 300 5.0-j35.0 40.0+j48.0 500 2.0-j22.0 36.0+j34.0 VDD=28V, IDQ=200 mA, POUT =20.0 W ZIN is the series equivalent input impedance of the device from gate to source. ZLOAD is the optimum series equivalent load impedance as measured from drain to ground. ELECTRICAL CHARACTERISTICS AT 25°C Parameter Drain-Source Breakdown Voltage Drain-Source Leakage Current Gate-Source Leakage Current Symbol Min Max Units Test Conditions BVDSS 65 - V VGS = 0.0 V , IDS = 4.0 mA IDSS - 2.0 mA VGS = 28.0 V , VGS = 0.0 V IGSS - 2.0 µA VGS = 20.0 V , VDS = 0.0 V VGS(TH) 2.0 6.0 V VDS = 10.0 V , IDS = 200.0 mA GM .160 - S VDS = 10.0 V , IDS 200.0 mA , Δ VGS = 1.0V, 80 μs Pulse Input Capacitance CISS - 14 pF VDS = 28.0 V , F = 1.0 MHz Output Capacitance COSS - 10 pF VDS = 28.0 V , F = 1.0 MHz Reverse Capacitance CRSS - 4.8 pF VDS = 28.0 V , F = 1.0 MHz GP 10 - dB VDD = 28.0 V, IDQ = 200.0 mA, POUT = 20.0 W F =500 MHz ŋD 50 - % VDD = 28.0 V, IDQ = 200.0 mA, POUT = 20.0 W F =500 MHz VSWR-T - 20:1 - VDD = 28.0 V, IDQ = 200.0 mA, POUT = 20.0 W F =500 MHz Gate Threshold Voltage Forward Transconductance Power Gain Drain Efficiency Load Mismatch Tolerance 1 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: https://www.macom.com/support UF2820P RF Power MOSFET Transistor 20W, 100-500 MHz, 28V Rev. V1 Typical Broadband Performance Curves CAPACITANCES VS VOLTAGE F=1.0MHz 30 CISS 10 POPWER OUTPUT (W) CAPACTANCES (pF) 12 POWER OUTPUT VS VOLTAGE PIN=1.0 W IDQ=200 mA POUT=500 W 8 COSS 6 4 CRSS 2 25 20 15 10 5 0 0 5 10 15 20 25 5 30 10 15 VDS(V) 30 EFFICIENCY VS FREQUENCY IDD=200 mA POUT =20 W F =500 MHz 70 EFFICIENCY (W) 30 GAIN (dB) 25 VDD(V) GAIN VS FREQUENCY VDD =28 V POUT=20 W IDQ =200 mA 20 10 0 20 100 200 300 400 65 60 55 50 100 500 200 FREQUENCY (MHz) 300 400 FREQUENCY (MHz) POWER OUTPUT VS POWER INPUT VDD =28 V IDQ =150 mA POWER OUTPUT (W) 20 100MHz 300MHz 500MHz 15 10 5 0 0.02 0.05 0.08 0.1 0.25 0.5 0.75 POWER INPUT (W) 2 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: https://www.macom.com/support 500 UF2820P RF Power MOSFET Transistor 20W, 100-500 MHz, 28V Rev. V1 TEST FIXTURE SCHEMATIC TEST FIXTURE ASSEMBLY 3 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: https://www.macom.com/support UF2820P RF Power MOSFET Transistor 20W, 100-500 MHz, 28V Rev. V1 M/A-COM Technology Solutions Inc. All rights reserved. Information in this document is provided in connection with M/A-COM Technology Solutions Inc ("MACOM") products. These materials are provided by MACOM as a service to its customers and may be used for informational purposes only. 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