XB1007-QT-EV1

Buffer Amplifier, GaAs MMIC 4 - 11 GHz XB1007-QT Rev. V2 Features • • • • • • • • Functional Schematic Excellent Transmit LO/Output Buffer Stage 23 dB Small Signal Gain 19 dBm P1dB Compression Point 4.5 dB Noise Figure Variable Gain with Adjustable Bias 100% RF, DC and Output Power Testing Lead-Free 3 mm, 16-lead QFN RoHS* Compliant Applications • Microwave and Millimeter-wave Point-to-Point Radio, LMDS, SATCOM and VSAT GND GND GND 1 6 1 5 1 4 VD 1 3 GND 1 12 GND RFIN 2 11 RFOUT GND 3 10 GND GND 4 9 GND Description The XB1007-QT is a two stage 4 - 11 GHz GaAs MMIC buffer amplifier. The device is assembled in a lead-free 3 mm QFN surface mount package offering excellent RF and thermal properties. This amplifier has a small signal gain of 23 dB with a 20 dBm P1dB output compression point. The device also provides variable gain regulation with adjustable bias. The device is ideally suited as an LO or RF buffer stage with broadband performance. 5 VG 7 8 GND GND GND Pin Configuration3 1,3,4,6,7,8,9,10,12,14,15,16 GND 2 RFIN 5 VG 1,2 Ordering Information XB1007-QT-0G00 Bulk Packaging 11 RFOUT XB1007-QT-0G0T Tape & Reel 13 VD XB1007-QT-EV1 Sample Board 17 Paddle4 1. Reference Application Note M513 for reel size information. 2. All sample boards include 5 loose parts. 1 6 3. MACOM recommends connecting unused package pins to ground. 4. The exposed pad centered on the package bottom must be connected to RF, DC and thermal ground. * Restrictions on Hazardous Substances, compliant to current RoHS EU directive. MACOM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: https://www.macom.com/support DC-0007253 Buffer Amplifier, GaAs MMIC 4 - 11 GHz XB1007-QT Rev. V2 Electrical Specifications: Freq. = 4 - 11 GHz, TA = +25°C, VD = 4 V, Z0 = 50 Ω Small Signal Gain dB — 23 — Input Return Loss dB — 20 — Output Return Loss dB — 12 — Gain Flatness dB — +/- 1.5 — Reverse Isolation dB — 50 — Noise Figure dB — 4.5 — P1dB dBm — 19 — Saturated Output Power dBm — 21 — Output IP3 dBm — 31 — Drain Bias Voltage V — 4 — Gate Bias Voltage V -1.0 -0.35 -0.1 Supply Current (VD = 4 V, VG = -0.5 V) mA — 100 130 Absolute Maximum Ratings5,6 Handling Procedures Please observe the following precautions to avoid damage: Input Power 20 dBm Drain Voltage 4.3 V Gate Voltage 0V Junction Temperature7 +150°C Operating Temperature -40°C to +85°C Storage Temperature -65°C to +165°C Static Sensitivity Gallium Arsenide Integrated Circuits are sensitive to electrostatic discharge (ESD) and can be damaged by static electricity. Proper ESD control techniques should be used when handling these HBM class 1A devices. 5. Exceeding any one or combination of these limits may cause permanent damage to this device. 6. MACOM does not recommend sustained operation near these survivability limits. 7. Operating at nominal conditions with TJ ≤ +150°C will ensure MTTF > 1 x 106 hours. 2 MACOM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: https://www.macom.com/support DC-0007253 Buffer Amplifier, GaAs MMIC 4 - 11 GHz XB1007-QT Rev. V2 Typical Performance Curves Reverse Isolation, 4 V, 100 mA 25 -10 20 -20 15 -30 S12 (dB) S21 (dB) Gain, 4 V, 100 mA 10 5 0 -40 -50 2 4 6 8 10 -60 12 2 4 6 Frequency (GHz) 0 0 -5 -5 -10 -10 -15 -20 -25 -25 4 6 8 10 -30 12 2 4 6 Frequency (GHz) 12 30 +25°C -40°C +85°C +25°C -40°C +85°C 25 PSAT (dBm) 25 P1dB (dBm) 10 Saturated Output Power, 4 V, 130 mA 30 20 15 3 8 Frequency (GHz) P1dB, 4 V, 130 mA 10 12 -15 -20 2 10 Output Return Loss, 4 V, 100 mA S22 (dB) S11 (dB) Input Return Loss, 4 V, 100 mA -30 8 Frequency (GHz) 20 15 4 5 6 7 8 Frequency (GHz) 9 10 11 10 4 5 6 7 8 9 10 11 Frequency (GHz) MACOM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: https://www.macom.com/support DC-0007253 Buffer Amplifier, GaAs MMIC 4 - 11 GHz XB1007-QT Rev. V2 Typical Performance Curves Output IP3 vs. Frequency Output IP3 vs. Gain 35 40 30 OIP3 (dBm) OIP3 (dBm) 30 25 20 4 GHz 6 GHz 8 GHz 10 GHz 10 15 10 20 4 5 6 7 8 9 0 10 6 10 14 Frequency (GHz) Output IP3 vs. Current 26 10 8 Noise Figure (dB) 30 OIP3 (dBm) 22 Noise Figure vs. Frequency 40 20 4 GHz 6 GHz 8 GHz 10 GHz 10 0 18 Gain (dB) 0 20 40 60 80 Drain Current (mA) 100 120 6 4 +25°C +50°C +75°C 2 140 0 4 6 8 10 12 14 16 Frequency (GHz) 4 MACOM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: https://www.macom.com/support DC-0007253 Buffer Amplifier, GaAs MMIC 4 - 11 GHz XB1007-QT Rev. V2 Lead-Free 3 mm 16-Lead PQFN† † Reference Application Note S2083 for lead-free solder reflow recommendations. Meets JEDEC moisture sensitivity level 1 requirements. Plating is 100% matte tin over copper. 5 MACOM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: https://www.macom.com/support DC-0007253 Buffer Amplifier, GaAs MMIC 4 - 11 GHz XB1007-QT Rev. V2 Applications Section App Note [1] Biasing The device provides variable gain with adjustable bias regulation. For optimum linearity performance, it is recommended to bias this device at VD = 4 V with ID = 100 mA. It is also recommended to use active biasing to control the drain currents because this gives the most reproducible results over temperature or RF level variations. Depending on the supply voltage available and the power dissipation constraints, the bias circuit may be a single transistor or a low power operational amplifier, with a low value resistor in series with the drain supply used to sense the current. The gate of the pHEMT is controlled to maintain correct drain current and thus drain voltage. The typical gate voltage needed to do this is -0.5 V. Typically the gate is protected with Silicon diodes to limit the applied voltage. Also, make sure to sequence the applied voltage to ensure negative gate bias is available before applying the positive drain supply. MTTF Graphs These numbers were calculated based on accelerated life test information and thermal model analysis received from the fabricating foundry. 220 1E+15 1E+14 200 1E+13 180 Tch_max (°C) MTTF (hours) 1E+12 1E+11 1E+10 1E+9 1E+8 1E+7 140 120 100 1E+6 Vdd = 4 V, Idd = 100 mA Vdd = 4 V, Idd = 130 mA 1E+5 1E+4 160 20 40 60 Vdd = 4 V, Idd = 100 mA Vdd = 4 V, Idd = 130 mA 80 80 100 Package Base Temperature (°C) 120 60 20 40 60 80 100 120 Package Base Temperature (°C) 6 MACOM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: https://www.macom.com/support DC-0007253 Buffer Amplifier, GaAs MMIC 4 - 11 GHz XB1007-QT Rev. V2 MACOM Technology Solutions Inc. (“MACOM”). All rights reserved. These materials are provided in connection with MACOM’s products as a service to its customers and may be used for informational purposes only. Except as provided in its Terms and Conditions of Sale or any separate agreement, MACOM assumes no liability or responsibility whatsoever, including for (i) errors or omissions in these materials; (ii) failure to update these materials; or (iii) conflicts or incompatibilities arising from future changes to specifications and product descriptions, which MACOM may make at any time, without notice. These materials grant no license, express or implied, to any intellectual property rights. THESE MATERIALS ARE PROVIDED "AS IS" WITH NO WARRANTY OR LIABILITY, EXPRESS OR IMPLIED, RELATING TO SALE AND/OR USE OF MACOM PRODUCTS INCLUDING FITNESS FOR A PARTICULAR PURPOSE, MERCHANTABILITY, INFRINGEMENT OF INTELLECTUAL PROPERTY RIGHT, ACCURACY OR COMPLETENESS, OR SPECIAL, INDIRECT, INCIDENTAL, OR CONSEQUENTIAL DAMAGES WHICH MAY RESULT FROM USE OF THESE MATERIALS. MACOM products are not intended for use in medical, lifesaving or life sustaining applications. MACOM customers using or selling MACOM products for use in such applications do so at their own risk and agree to fully indemnify MACOM for any damages resulting from such improper use or sale. 7 MACOM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: https://www.macom.com/support DC-0007253