XB1008-QT-0G0T

XB1008-QT Buffer Amplifier 10 - 21 GHz Rev. V2 Features          Functional Block Diagram Excellent Transmit LO/Output Buffer Stage 17 dB Small Signal Gain 20 dBm Psat 32 dBm Output IP3 4.5 dB Noise Figure Variable Gain with Adjustable Bias 100% RF, DC and Output Power Testing Lead-Free 3 mm 16-Lead QFN Package RoHS* Compliant Description GND GND GND 16 Package XB1008-QT-0G0T tape and reel XB1008-QT-EV1 evaluation module 13 1 12 GND GND 2 11 GND RFIN 3 10 RFOUT GND 4 9 GND 5 VG 6 7 8 GND GND GND Pin Configuration Pin No. Function 1-2, 4, 6-9, 11, 12, 14-16 Ground 3 RF Input 5 Gate Bias 10 RF Output 13 Drain Bias Paddle2 Ground Ordering Information1 Part Number 14 GND The XB1008-QT is a two stage 10 - 21 GHz GaAs MMIC buffer amplifier that has a small signal gain of 17 dB with a 18 dBm P1dB output compression point. The device also provides variable gain regulation with adjustable bias. The device is ideally suited as an LO or RF buffer stage with broadband performance at a very low cost. The device comes in an RoHS compliant 3 mm QFN surface mount package offering excellent RF and thermal properties. This device is specifically designed for use in PtP radio applications and is well suited for other telecom applications such as SATCOM and VSAT. 15 VD 2. The exposed pad centered on the package bottom must be connected to RF, DC and thermal ground. 1. Reference Application Note M513 for reel size information. * Restrictions on Hazardous Substances, European Union Directive 2011/65/EU. 1 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: https://www.macom.com/support XB1008-QT Buffer Amplifier 10 - 21 GHz Rev. V2 Electrical Specifications: 10 - 21 GHz, TA = +25°C Parameter Units Min. Typ. Max. Input Return Loss (S11) dB — 12 — Output Return Loss (S22) dB — 12 — Small Signal Gain (S21) dB — 17 — Gain Flatness (ΔS21) dB — +/-2 — Reverse isolation (S12) dB — 65 — Noise Figure dB — 4.5 — Output Power for 1dB Compression Point (P1dB) dBm — 18 — Saturated Output Power (PSAT) dBm — 20 — Output Third Order Intercept dBm — 32 — Drain Bias Voltage (VD) VDC — 4 4 Gate Bias Voltage (VG) VDC -1.0 -0.23 -0.1 Supply Current (ID) (VD = +4.0 V, VG2 = -0.5 V Typical) mA — 100 130 Absolute Maximum Ratings3 Handling Procedures Parameter Absolute Maximum Supply Voltage 4.3 VDC Please observe the following precautions to avoid damage: Supply Current 180 mA Static Sensitivity Gate Bias Voltage 0V Input Power 20 dBm Storage Temperature -65°C to +165°C Operating Temperature -55°C to +85°C Channel Temperature 150°C These electronic devices are sensitive to electrostatic discharge (ESD) and can be damaged by static electricity. Proper ESD control techniques should be used when handling these HBM Class 1A devices, MM Class A devices. 3. Channel temperature directly affects a device's MTTF. Channel temperature should be kept as low as possible to maximize lifetime. 2 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: https://www.macom.com/support XB1008-QT Buffer Amplifier 10 - 21 GHz Rev. V2 Typical Performance Curves OIP3, VD = 4 V, 90 mA, PIN = 15 dBm 25 35 20 30 OIP3 (dBm) S21 (dB) Small Signal Gain, VD = 4 V, 100 mA 15 10 5 0 25 20 15 9 11 13 15 17 19 21 10 23 9 11 13 Frequency (GHz) 0 0 -5 -5 -10 -10 S22 (dB) S11 (dB) 17 19 21 23 19 21 23 Output Return Loss, VD = 4 V, 100 mA Input Return Loss, VD = 4 V, 100 mA -15 -20 -25 15 Frequency (GHz) -15 -20 9 11 13 15 17 19 21 23 Frequency (GHz) -25 9 11 13 15 17 Frequency (GHz) OIP3, VD = 4 V, 20 - 100 mA, PIN = -15 dBm 35 30 OIP3 (dBm) 25 20 15 10 ID = 20 mA ID = 30 mA ID = 40 mA 5 0 3 9 11 13 ID = 50 mA ID = 60 mA ID = 70 mA 15 17 ID = 80 mA ID = 90 mA ID = 100 mA 19 21 23 Frequency (GHz) M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: https://www.macom.com/support XB1008-QT Buffer Amplifier 10 - 21 GHz Rev. V2 Typical Performance Curves (cont.) Output Power vs. Frequency, VD = 4 V, 100 mA 25 25 20 20 Output Power (dBm) Output Power (dBm) Output Power vs. Input Power, VD = 4 V, 100 mA 15 11 GHz 12 GHz 13 GHz 14 GHz 15 GHz 16 GHz 17 GHz 18 GHz 19 GHz 20 GHz 21 GHz 10 5 0 -10 -8 -6 -4 -2 0 2 4 6 8 Pin = -10 dBm Pin = -8 dBm Pin = -6 dBm Pin = -4 dBm Pin = -2 dBm Pin = 0 dBm Pin = 2 dBm Pin = 4 dBm Pin = 6 dBm Pin = 8 dBm Pin = 10 dBm 15 10 5 0 10 9 11 13 Input Power (dBm) 15 17 19 21 23 Frequency (GHz) MTTF These numbers were calculated based on accelerated life test information and thermal model analysis received from the fabricating foundry. MTTF Hours vs. Package Base Temperature, VDD = 4 V Tch (max.) vs. Package Base Temperature, VDD = 4 V 220 1E+15 1E+14 200 Idd = 100 mA Idd = 130 mA 1E+13 Tch_max (°C) MTTF (hours) 1E+11 1E+10 1E+9 1E+8 1E+7 160 140 120 100 1E+6 1E+5 80 1E+4 1E+3 Idd = 100 mA Idd = 130 mA 180 1E+12 20 40 60 80 100 Package Base Temperature (°C) 120 60 20 40 60 80 100 Package Base Temperature (°C) 4 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: https://www.macom.com/support 120 XB1008-QT Buffer Amplifier 10 - 21 GHz Rev. V2 App Note [1] Biasing - The device provides variable gain with adjustable bias regulation. For optimum linearity performance, it is recommended to bias this device at VD = 4 V with ID = 90 mA. It is also recommended to use active biasing to control the drain currents because this gives the most reproducible results over temperature or RF level variations. Depending on the supply voltage available and the power dissipation constraints, the bias circuit may be a single transistor or a low power operational amplifier, with a low value resistor in series with the drain supply used to sense the current. The gate of the pHEMT is controlled to maintain correct drain current and thus drain voltage. The typical gate voltage needed to do this is -0.5 V. Typically the gate is protected with silicon diodes to limit the applied voltage. Also, make sure to sequence the applied voltage to ensure negative gate bias is available before applying the positive drain supply. Lead-Free Package Dimensions/Layout† † Reference Application Note S2083 for lead-free solder reflow recommendations. Meets JEDEC moisture sensitivity level 1 requirements. 5 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: https://www.macom.com/support XB1008-QT Buffer Amplifier 10 - 21 GHz Rev. V2 M/A-COM Technology Solutions Inc. All rights reserved. Information in this document is provided in connection with M/A-COM Technology Solutions Inc ("MACOM") products. These materials are provided by MACOM as a service to its customers and may be used for informational purposes only. Except as provided in MACOM's Terms and Conditions of Sale for such products or in any separate agreement related to this document, MACOM assumes no liability whatsoever. MACOM assumes no responsibility for errors or omissions in these materials. MACOM may make changes to specifications and product descriptions at any time, without notice. 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