XF1001-SC-0G00

1 W Heterojunction Field Effect Transistor (HFET) DC - 6 GHz XF1001-SC Rev. V4 Features • • • • • • Functional Block Diagram 15.5 dB Gain @ 1.9 GHz 10.0 dB Gain @ 5.8 GHz 46.5 dBm Output IP3 30.0 dBm P1dB SOT-89 Surface Mount Technology Package RoHS* Compliant GND Applications • Aerospace and Defense • Wireless Networking and Communication Pin 1 Description The XF1001-SC is a high linearity Heterojunction Field Effect Transistor (HFET) housed in an industry standard SOT-89 package. Optimum performance is achieved when the device is biased at a drain voltage of 8 V and drain current of 300 mA. At this bias point, the device is capable of >30 dBm of P1dB and OIP3 of >46 dBm. RFIN GND RFOUT Pin Configuration3 The XF1001-SC is suitable for applications up to 6 GHz where it has 10 dB of gain. Pin # Function 1 RF Input 2, 4 Ground 3 RF Output / Bias 3. The exposed pad centered on the package bottom must be connected to RF, DC and thermal ground. 1,2 Ordering Information Part Number Package XF1001-SC-0G00 Bulk Packaging XF1001-SC-0G0T 3000 piece reel XF1001-SC-EV1 Evaluation Board 1. Reference Application Note M513 for reel size information. 2. All sample boards include 5 loose parts. 1 * Restrictions on Hazardous Substances, compliant to current RoHS EU directive. MACOM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: https://www.macom.com/support DC-0022808 1 W Heterojunction Field Effect Transistor (HFET) DC - 6 GHz XF1001-SC Rev. V4 Electrical Specifications: TA = +25°C, VDD = 8 V, Z0 = 50 Ω Gain Externally matched 1.9 GHz 5.8 GHz dB 13.5 — 15.5 10.0 Noise Figure 1.9 GHz 5.8 GHz dB — 4.5 5.0 — Input Return Loss 1.9 GHz 5.8 GHz dB — 12.5 22.5 — Output Return Loss 1.9 GHz 5.8 GHz dB — 7.5 7.5 — Output P1dB 1.9 GHz 5.8 GHz dBm 29 — 30 30 — Output IP3 Pout/Tone = 13 dBm, Spacing = 5 MHz 1.9 GHz 5.8 GHz dBm 44.0 — 46.5 46.5 — Quiescent Current 1.9 GHz 5.8 GHz mA — 300 300 330 — Absolute Maximum Ratings4,5 — Handling Procedures Please observe the following precautions to avoid damage: Supply Voltage 9V Gate Voltage (VG) -2.5 V < VG < 0 V Input Power 24 dBm Power Dissipation 4.5 W Current 450 mA Junction Temperature +175°C Operating Temperature -40°C to +85°C Storage Temperature -55°C to +150°C Thermal Resistance 30°C/W Static Sensitivity These electronic devices are sensitive to electrostatic discharge (ESD) and can be damaged by static electricity. Proper ESD control techniques should be used when handling these Class 1A devices. 4. Exceeding any one or combination of these limits may cause permanent damage to this device. 5. MACOM does not recommend sustained operation near these survivability limits. 2 MACOM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: https://www.macom.com/support DC-0022808 1 W Heterojunction Field Effect Transistor (HFET) DC - 6 GHz XF1001-SC Rev. V4 Parts List @ 1.9 GHz PCB Layout @ 1.9 GHz C1, C2 100 pF 0603 C3 2.2 pF 0603 C4 1.2 pF 0603 C5, C6 1000 pF 0603 C7, C8 3.3 µF 0805 L1 1.6 nH 0603 L2 24 nH 0603 R1 2.49 KΩ 0603 Application Schematic @ 1.9 GHz VG (-) C7 C8 C5 C6 ` L1 R1 U1 L2 ` C3 C1 RFIN VD (+) C4 C2 RFOUT 3 MACOM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: https://www.macom.com/support DC-0022808 1 W Heterojunction Field Effect Transistor (HFET) DC - 6 GHz XF1001-SC Rev. V4 Typical Performance Curves @ 1.9 GHz Gain 20 S21 (dB) 15 10 5 0 1.6 1.7 1.8 1.9 2.0 2.1 2.2 Frequency (MHz) Output Return Loss 0 0 -5 -5 S22 (dB) S11 (dB) Input Return Loss -10 -15 -10 -15 -20 1.6 1.7 1.8 1.9 2.0 2.1 -20 1.6 2.2 1.7 1.8 Frequency (MHz) P1dB 2.0 2.1 2.2 OIP3 40 50 35 45 OIP3 (dBm) P1dB (dBm) 1.9 Frequency (MHz) 30 40 35 25 20 1.7 1.8 1.8 1.9 1.9 2.0 Frequency (MHz) 2.0 2.1 2.1 30 1.7 1.8 1.8 1.9 1.9 2.0 2.0 2.1 2.1 Frequency (MHz) 4 MACOM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: https://www.macom.com/support DC-0022808 1 W Heterojunction Field Effect Transistor (HFET) DC - 6 GHz XF1001-SC Rev. V4 Parts List @ 5.8 GHz PCB Layout @ 5.8 GHz C1, C2 100 pF 0603 C3 2.2 pF 0603 C4 1.2 pF 0603 C5, C6 1000 pF 0603 C7, C8 3.3 µF 0805 L1 1.6 nH 0603 L2 24 nH 0603 R1 2.49 KΩ 0603 Application Schematic @ 5.8 GHz VG (-) C7 C8 C5 C6 C1 L1 U1 L2 ` ` RFIN VD (+) C2 C3 RFOUT 5 MACOM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: https://www.macom.com/support DC-0022808 1 W Heterojunction Field Effect Transistor (HFET) DC - 6 GHz XF1001-SC Rev. V4 Typical Performance Curves @ 5.8 GHz Gain 20 S21 (dB) 15 10 5 0 5.5 5.6 5.7 5.8 5.9 6.0 Frequency (MHz) Output Return Loss 0 0 -5 -5 S22 (dB) S11 (dB) Input Return Loss -10 -15 -10 -15 -20 5.5 5.6 5.7 5.8 5.9 -20 5.5 6.0 5.6 Frequency (MHz) P1dB, PSAT 5.8 5.9 6.0 5.9 6.0 OIP3 50 40 35 45 P1dB PSAT OIP3 (dBm) P1dB, PSAT (dBm) 5.7 Frequency (MHz) 30 40 35 25 20 5.5 5.6 5.7 5.8 Frequency (MHz) 5.9 6.0 30 5.5 5.6 5.7 5.8 Frequency (MHz) 6 MACOM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: https://www.macom.com/support DC-0022808 1 W Heterojunction Field Effect Transistor (HFET) DC - 6 GHz XF1001-SC Rev. V4 Typical Performance Curves @ 5.8 GHz over Temperature Gain 20 +25°C -40°C +85°C S21 (dB) 15 10 5 0 5.5 5.6 5.7 5.8 5.9 6.0 Frequency (MHz) P1dB OIP3 40 50 +25°C -40°C +85°C 45 OIP3 (dB) P1dB (dBm) 35 30 25 40 +25°C -40°C +85°C 35 20 5.5 5.6 5.7 5.8 Frequency (MHz) 5.9 6.0 30 5.5 5.6 5.7 5.8 5.9 6.0 Frequency (MHz) 7 MACOM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: https://www.macom.com/support DC-0022808 1 W Heterojunction Field Effect Transistor (HFET) DC - 6 GHz XF1001-SC Rev. V4 Lead-Free SOT-89† AYYW Markings: A = Part Number (XF1001) YY = Half of Year W = Date Code (WEEK) † Reference Application Note M538 for lead-free solder reflow recommendations. Meets JEDEC moisture sensitivity level 1 requirements. Plating is 100% matte tin plating over copper 8 MACOM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: https://www.macom.com/support DC-0022808 1 W Heterojunction Field Effect Transistor (HFET) DC - 6 GHz XF1001-SC Rev. V4 MACOM Technology Solutions Inc. (“MACOM”). All rights reserved. These materials are provided in connection with MACOM’s products as a service to its customers and may be used for informational purposes only. Except as provided in its Terms and Conditions of Sale or any separate agreement, MACOM assumes no liability or responsibility whatsoever, including for (i) errors or omissions in these materials; (ii) failure to update these materials; or (iii) conflicts or incompatibilities arising from future changes to specifications and product descriptions, which MACOM may make at any time, without notice. These materials grant no license, express or implied, to any intellectual property rights. THESE MATERIALS ARE PROVIDED "AS IS" WITH NO WARRANTY OR LIABILITY, EXPRESS OR IMPLIED, RELATING TO SALE AND/OR USE OF MACOM PRODUCTS INCLUDING FITNESS FOR A PARTICULAR PURPOSE, MERCHANTABILITY, INFRINGEMENT OF INTELLECTUAL PROPERTY RIGHT, ACCURACY OR COMPLETENESS, OR SPECIAL, INDIRECT, INCIDENTAL, OR CONSEQUENTIAL DAMAGES WHICH MAY RESULT FROM USE OF THESE MATERIALS. MACOM products are not intended for use in medical, lifesaving or life sustaining applications. MACOM customers using or selling MACOM products for use in such applications do so at their own risk and agree to fully indemnify MACOM for any damages resulting from such improper use or sale. 9 MACOM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: https://www.macom.com/support DC-0022808