XP1027-BD-000V

XP1027-BD Power Amplifier 27.0-31.0 GHz Rev. V1 Features Chip Device Layout  Ka-Band 4 W Power Amplifier  Balanced Design Provides Good Input/Output Match  21.0 dB Small Signal Gain  +35.5 dBm Saturated Output Power  +43.0 dBm Output Third Order Intercept (OIP3)  100% On-Wafer RF, DC and Output Power Testing  100% Visual Inspection to MIL-STD-883 Method 2010  RoHS* Compliant and 260°C Reflow Compatible Description M/A-COM Tech’s three stage 27.0-31.0 GHz GaAs MMIC power amplifier has a small signal gain of 21.0 dB with +35.5 dBm saturated output power. The device also includes Lange couplers to achieve good input/output return loss. This MMIC uses M/ACOM Tech’s GaAs PHEMT device model technology, and is based upon electron beam lithography to ensure high repeatability and uniformity. The chip has surface passivation to protect and provide a rugged part with backside via holes and gold metallization to allow either a conductive epoxy or eutectic solder die attach process. This device is well suited for Millimeterwave Point-to-Point Radio, LMDS, SATCOM and VSAT applications. Absolute Maximum Ratings Parameter Absolute Max. Supply Voltage (Vd) +6.0 VDC2 Supply Current (Id1,2,3) 325,825,1575 mA Gate Bias Voltage (Vg) +0.3 VDC Input Power (Pin) +25 dBm Storage Temperature (Tstg) -65 °C to +165 °C Operating Temperature (Ta) -55 °C to +85 °C Channel Temperature (Tch)1 175 °C 1. Channel temperature directly affects a device's MTTF. Channel temperature should be kept as low as possible to maximize lifetime. 2. Under pulsed bias conditions, under CW Psat conditions further reduction in max supply voltage (~0.5V) is recommended. Ordering Information Part Number Package XP1027-BD-000V “V” - vacuum release gel paks XP1027-BD-EV1 evaluation module 1 ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions • North America Tel: 800.366.2266 • Europe Tel: +353.21.244.6400 is considering for development. Performance is based on target specifications, simulated results, • India Tel: +91.80.43537383 • China Tel: +86.21.2407.1588 and/or prototype measurements. Commitment to develop is not guaranteed. Visit www.macomtech.com for additional data sheets and product information. PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make Commitment to produce in volume is not guaranteed. changes to the product(s) or information contained herein without notice. XP1027-BD Power Amplifier 27.0-31.0 GHz Rev. V1 Electrical Specifications: 27-31 GHz (Ambient Temperature T = 25°C) Parameter Units Min. Typ. Max. Input Return Loss (S11) dB - 20.0 - Output Return Loss (S22) dB - 20.0 - Small Signal Gain (S21)1 dB - 21.0 - Gain Flatness (S21) dB - +/-1.0 - Reverse Isolation (S12) dB - 50.0 - Output Power for 1 dB Compression (P1dB) dBm - +34.5 - Output Third Order Intercept Point (OIP3) dBm - +43.0 - Saturated Output Power (Psat)1 dBm - +35.5 - Drain Bias Voltage (Vd1,2,3) VDC - +5.5 +5.8 Gate Bias Voltage (Vg1,2,3) VDC -1.0 -0.7 0.0 Supply Current (Id1) (Vd=5.5 V, Vg=-0.7 V Typical) mA - 250 300 Supply Current (Id2) (Vd=5.5 V, Vg=-0.7 V Typical) mA - 625 750 Supply Current (Id3) (Vd=5.5 V, Vg=-0.7 V Typical) mA - 1185 1435 1. Measured on wafer pulsed 2 ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions • North America Tel: 800.366.2266 • Europe Tel: +353.21.244.6400 is considering for development. Performance is based on target specifications, simulated results, • India Tel: +91.80.43537383 • China Tel: +86.21.2407.1588 and/or prototype measurements. Commitment to develop is not guaranteed. Visit www.macomtech.com for additional data sheets and product information. PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make Commitment to produce in volume is not guaranteed. changes to the product(s) or information contained herein without notice. XP1027-BD Power Amplifier 27.0-31.0 GHz Rev. V1 Typical Performance Curves (On-Wafer1) 30 26 20 25 10 24 0 23 -10 22 -20 -30 21 -40 20 -50 19 -60 -70 18 -80 17 16 25.0 -90 26.0 27.0 28.0 29.0 30.0 31.0 32.0 33.0 -100 20.0 0 0 -5 -5 -10 -10 -15 -15 -20 -20 -25 -25 -30 -30 -35 -35 -40 25.0 26.0 27.0 28.0 29.0 30.0 31.0 32.0 33.0 -40 20.0 0 0 -5 -5 -10 -10 -15 -15 -20 -20 -25 -25 -30 -30 -35 -35 -40 -40 -45 -45 -50 25.0 26.0 27.0 28.0 29.0 30.0 31.0 32.0 33.0 22.0 24.0 26.0 28.0 30.0 32.0 34.0 36.0 38.0 40.0 22.0 24.0 26.0 28.0 30.0 32.0 34.0 36.0 38.0 40.0 22.0 24.0 26.0 28.0 30.0 32.0 34.0 36.0 38.0 40.0 -50 20.0 1. Measurements – On-Wafer S-Parameters have been taken using reduced bias conditions as shown. Measurements are referenced 150 um in from RF In/Out pad edge. For optimum performance M/A-COM Tech T-pad transition and tuned output matching network is recommended. For additional information see the M/A-COM Tech “T-Pad Transition” application note. Contact technical sales for output matching network information. 3 ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions • North America Tel: 800.366.2266 • Europe Tel: +353.21.244.6400 is considering for development. Performance is based on target specifications, simulated results, • India Tel: +91.80.43537383 • China Tel: +86.21.2407.1588 and/or prototype measurements. Commitment to develop is not guaranteed. Visit www.macomtech.com for additional data sheets and product information. PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make Commitment to produce in volume is not guaranteed. changes to the product(s) or information contained herein without notice. XP1027-BD Power Amplifier 27.0-31.0 GHz Rev. V1 Typical Performance Curves (On-Wafer1) (cont.) 26 24 22 20 18 16 14 12 40 39 38 37 36 35 10 8 6 4 34 33 32 2 0 31 30 27.0 28.0 29.0 30.0 31.0 32.0 33.0 22 23 24 28 GHz 25 26 27 29 GHz 28 29 30 30 GHz 31 32 31 GHz 33 34 35 36 37 32 GHz 2000 1800 1600 1400 1200 1000 800 600 400 200 0 22 23 24 25 26 27 28 Id1 29 30 Id2 31 32 33 34 35 36 37 Id3 1. Measurements – On-Wafer Output Power data has been taken using bias conditions as shown. Measurements are referenced 150 um in from RF In/Out pad edge. For optimum performance M/A-COM Tech T-pad transition and tuned output matching network is recommended. For additional information see the M/A-COM Tech “T-Pad Transition” application note. Contact technical sales for output matching network information. 4 ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions • North America Tel: 800.366.2266 • Europe Tel: +353.21.244.6400 is considering for development. Performance is based on target specifications, simulated results, • India Tel: +91.80.43537383 • China Tel: +86.21.2407.1588 and/or prototype measurements. Commitment to develop is not guaranteed. Visit www.macomtech.com for additional data sheets and product information. PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make Commitment to produce in volume is not guaranteed. changes to the product(s) or information contained herein without notice. XP1027-BD Power Amplifier 27.0-31.0 GHz Rev. V1 Typical Performance Curves (On-Wafer1) (cont.) 40 40 39 39 38 38 37 37 36 36 35 35 34 34 33 33 32 32 31 31 30 27.0 28.0 29.0 30.0 31.0 32.0 33.0 30 27.0 28.0 40 40 Vg=-1.0V, Id=1196 mA Vg=-0.9V, Id=1491 mA Vg=-0.8V, Id=1683 mA Vg=-0.7V, Id=1944 mA Vg=-0.6V, Id=2318 mA 35 30 30 25 20 20 15 15 10 10 5 5 0 18 20 22 24 26 28 30 32 34 36 38 30.0 31.0 32.0 33.0 Vg=-1.0 V, Id=1346 mA Vg=-0.9V, Id=1496 mA Vg=-0.8V, Id=1795 mA Vg=-0.7V, Id=2019 mA Vg=-0.6V, Id=2468 mA 35 25 29.0 0 18 20 22 24 26 28 30 32 34 36 38 1. Measurements – On-Wafer Output Power data has been taken using bias conditions as shown. Measurements are referenced 150 um in from RF In/Out pad edge. For optimum performance M/A-COM Tech T-pad transition and tuned output matching network is recommended. For additional information see the M/A-COM Tech “T-Pad Transition” application note. Contact technical sales for output matching network information. 5 ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions • North America Tel: 800.366.2266 • Europe Tel: +353.21.244.6400 is considering for development. Performance is based on target specifications, simulated results, • India Tel: +91.80.43537383 • China Tel: +86.21.2407.1588 and/or prototype measurements. Commitment to develop is not guaranteed. Visit www.macomtech.com for additional data sheets and product information. PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make Commitment to produce in volume is not guaranteed. changes to the product(s) or information contained herein without notice. XP1027-BD Power Amplifier 27.0-31.0 GHz Rev. V1 Typical Performance Curves (On-Wafer1) (cont.) 45 45 44 44 43 43 42 42 41 41 40 40 39 39 38 38 37 37 36 36 35 35 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 28 GHz 29 GHz 30 GHz 31 GHz 32 GHz 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 28 GHz 29 GHz 30 GHz 31 GHz 32 GHz 45 44 43 42 41 40 39 38 37 36 35 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 28 GHz 29 GHz 30 GHz 31 GHz 32 GHz Additional Data – The XP1027 device consists of a balanced XP1026 pair. See the XP1026 data sheet for additional data concerning OIP3 control and optimization. 1. Measurements – On-Wafer Output Power data has been taken using bias conditions as shown. Measurements are referenced 150 um in from RF In/Out pad edge. For optimum performance M/A-COM Tech T-pad transition and tuned output matching network is recommended. For additional information see the M/A-COM Tech “T-Pad Transition” application note. Contact technical sales for output matching network information. 6 ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions • North America Tel: 800.366.2266 • Europe Tel: +353.21.244.6400 is considering for development. Performance is based on target specifications, simulated results, • India Tel: +91.80.43537383 • China Tel: +86.21.2407.1588 and/or prototype measurements. Commitment to develop is not guaranteed. Visit www.macomtech.com for additional data sheets and product information. PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make Commitment to produce in volume is not guaranteed. changes to the product(s) or information contained herein without notice. XP1027-BD Power Amplifier 27.0-31.0 GHz Rev. V1 Typical Performance Curves (Text Fixture1) 28 39 27 38 26 37 25 36 24 35 23 22 34 21 33 20 32 19 31 18 30 17 16 25.0 26.0 27.0 28.0 +85 deg C 29.0 30.0 -40 deg C 31.0 32.0 33.0 29 27.0 27.5 28.0 28.5 29.0 +85 deg C +25 deg C 0 29.5 30.0 30.5 -40 deg C 31.0 31.5 32.0 32.5 +25 deg C 0 -5 -5 -10 -10 -15 -20 -15 -25 -20 -30 -25 25.0 26.0 27.0 28.0 +85 deg C 29.0 -40 deg C 30.0 31.0 32.0 33.0 -35 25.0 27.0 +25 deg C 28.0 +85 deg C 39 39 38 38 37 29.0 30.0 -40 deg C 31.0 32.0 33.0 +25 deg C 37 36 36 35 35 34 34 33 33 32 31 32 30 31 29 27.0 26.0 30 27.5 28.0 28.5 29.0 29.5 30.0 30.5 31.0 31.5 32.0 32.5 29 27.0 +85 deg C -40 deg C 27.5 28.0 28.5 29.0 29.5 30.0 30.5 31.0 31.5 32.0 +25 deg C + 85 deg C -40 deg C +25 deg C 1. Measurements – Test Fixture data includes all bond wire parasitics, uncompensated RF In/Out M/A-COM Tech T-Pad transitions and RF ceramic circuit losses. For Gain and Output Power curves RF In/Out circuit losses have been removed. 7 ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions • North America Tel: 800.366.2266 • Europe Tel: +353.21.244.6400 is considering for development. Performance is based on target specifications, simulated results, • India Tel: +91.80.43537383 • China Tel: +86.21.2407.1588 and/or prototype measurements. Commitment to develop is not guaranteed. Visit www.macomtech.com for additional data sheets and product information. PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make Commitment to produce in volume is not guaranteed. changes to the product(s) or information contained herein without notice. XP1027-BD Power Amplifier 27.0-31.0 GHz Rev. V1 S-Parameters (On-Wafer1) Typcial S-Parameter Data for XP1027-BD Vd=5.0 V, Id=1817 mA Frequency ((GHz)) 20.0 21.0 22.0 23.0 24.0 25.0 26.0 27 0 27.0 28.0 29.0 30.0 31.0 32.0 33.0 34.0 35.0 36.0 37.0 38.0 39.0 40.0 S11 ( g) (Mag) 0.095 0.094 0.081 0.056 0.021 0.034 0.075 0 063 0.063 0.033 0.037 0.045 0.080 0.102 0.144 0.186 0.172 0.132 0.093 0.082 0.125 0.213 S11 ( g) (Ang) -161.19 -176.82 167.19 150.22 156.80 -112.97 -132.74 -172.62 172 62 -154.36 -96.19 -117.39 -80.63 -90.30 -99.69 -116.62 -135.02 -147.33 -137.42 -98.95 -83.78 -91.17 S21 ( g) (Mag) 0.018 0.030 0.053 0.133 0.609 2.829 8.859 13 061 13.061 12.733 11.810 11.733 11.822 9.329 5.029 2.256 1.078 0.569 0.314 0.177 0.106 0.070 S21 ( g) (Ang) 141.50 145.61 145.02 149.82 127.34 60.25 -42.86 -157.41 157 41 107.23 25.72 -52.07 -136.80 125.72 35.62 -35.68 -91.79 -143.33 168.21 122.89 81.94 41.66 S12 ( g) (Mag) 0.0014 0.0010 0.0016 0.0026 0.0024 0.0025 0.0025 0 0020 0.0020 0.0011 0.0023 0.0029 0.0022 0.0011 0.0003 0.0007 0.0006 0.0003 0.0008 0.0013 0.0006 0.0009 S12 ( g) (Ang) 24.88 17.35 21.04 1.17 -30.49 -64.53 -101.60 -133.14 133 14 -154.87 -162.26 161.25 89.92 21.55 165.09 11.33 -10.99 151.55 161.82 29.32 -45.43 41.42 S22 ( g) (Mag) 0.028 0.040 0.063 0.085 0.077 0.041 0.056 0 115 0.115 0.115 0.104 0.075 0.118 0.169 0.150 0.070 0.022 0.100 0.194 0.249 0.278 0.244 S22 ( g) (Ang) 33.51 -2.58 -39.25 -71.83 -103.77 -158.29 -35.72 -81.64 81 64 -101.71 -112.08 -109.13 -95.89 -115.52 -140.18 -154.59 -60.02 -66.42 -78.20 -89.91 -105.81 -124.19 1. Measurements – On-Wafer S-Parameters have been taken using reduced bias conditions as shown. Measurements are referenced 150 um in from RF In/Out pad edge. 8 ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions • North America Tel: 800.366.2266 • Europe Tel: +353.21.244.6400 is considering for development. Performance is based on target specifications, simulated results, • India Tel: +91.80.43537383 • China Tel: +86.21.2407.1588 and/or prototype measurements. Commitment to develop is not guaranteed. Visit www.macomtech.com for additional data sheets and product information. PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make Commitment to produce in volume is not guaranteed. changes to the product(s) or information contained herein without notice. XP1027-BD Power Amplifier 27.0-31.0 GHz Rev. V1 Mechanical Drawing 0.961 1.361 1.761 (0.038) (0.054) (0.069) 3.500 (0.138) 2 3 2.561 2.961 3.361 (0.101) (0.117) (0.132) 5 4 6 7 8 1.274 (0.050) 2.226 (0.088) 1 14 0.0 12 13 11 0.961 1.361 1.761 (0.038) (0.054) (0.069) 0.0 10 9 2.561 2.961 3.361 (0.101) (0.117) (0.132) 4.000 (0.158) (Note: Engineering designator is 30SPA0536) Units:millimeters (inches) Bond pad dimensions are shown to center of bond pad. Thickness:0.110 +/- 0.010 (0.0043 +/- 0.0004),Backside is ground,Bond Pad/Backside Metallization:Gold Most DCBond Pads are 0.100 x 0.100 (0.004 x 0.004).All RFand Vd3 Bond Pads are 0.100 x 0.200 (0.004 x 0.008) Bond pad centers are approximately 0.109 (0.004) from the edge of the chip. Dicing tolerance:+/- 0.005 (+/- 0.0002).Approximate weight:8.68 mg. Bond Pad #1 (RFIn) Bond Pad #2 (Vg1A) Bond Pad #3 (Vd1A) Bond Pad #4 (Vg2A) Bond Pad #5 (Vd2A) Bond Pad #6 (Vg3A) Bond Pad #7 (Vd3A) Bond Pad #8 (RFOut) Bond Pad #9 (Vd3B) Bond Pad #10 (Vg3B) Bond Pad #11 Vd2B) Bond Pad #12 (Vg2B) Bond Pad #13 (Vd1B) Bond Pad #14 (Vg1B) Bias Arrangement (See App Notes [1], [2] and [3]) Vg2 Vg1 2 3 4 Vg3 5 6 Vd3 7 8 RF In RF Out 1 14 13 12 11 10 9 Vd2 Vd1 Vg3 Vd3 Layout for reference only – It is recommended to bias output stage from both sides. 9 ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions • North America Tel: 800.366.2266 • Europe Tel: +353.21.244.6400 is considering for development. Performance is based on target specifications, simulated results, • India Tel: +91.80.43537383 • China Tel: +86.21.2407.1588 and/or prototype measurements. Commitment to develop is not guaranteed. Visit www.macomtech.com for additional data sheets and product information. PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make Commitment to produce in volume is not guaranteed. changes to the product(s) or information contained herein without notice. XP1027-BD Power Amplifier 27.0-31.0 GHz Rev. V1 MTTF Graphs These numbers were calculated based upon accelerated life test information received from the fabricating foundry and extensive thermal modeling/finite element analysis done at M/A-COM Tech. The values shown here are only to be used as a guideline against the end application requirements and only represent reliability information under one bias condition. Ultimately bias conditi ons and resulting power dissipation along with the practical aspects, i.e. thermal material stack-up, attach method of die placement are the key parts in determining overall reliability for a specific application, see previous pages. If the data shown below does not meet your reliability requirements or if the bias conditions are not within your operating limits please contact technical sales for additional information. 1.0E+08 1.00E+07 1.0E+07 1.00E+06 1.0E+06 1.00E+05 1.0E+05 1.00E+04 1.0E+04 1.00E+03 1.0E+03 1.00E+02 1.0E+02 1.00E+01 55 65 75 85 95 105 115 125 55 9.5 230 9.3 220 65 75 85 95 105 115 125 210 9.1 200 8.9 190 8.7 180 8.5 170 160 8.3 150 8.1 140 7.9 130 55 65 75 85 95 105 115 125 55 65 75 85 95 105 115 125 10 ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions • North America Tel: 800.366.2266 • Europe Tel: +353.21.244.6400 is considering for development. Performance is based on target specifications, simulated results, • India Tel: +91.80.43537383 • China Tel: +86.21.2407.1588 and/or prototype measurements. Commitment to develop is not guaranteed. Visit www.macomtech.com for additional data sheets and product information. PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make Commitment to produce in volume is not guaranteed. changes to the product(s) or information contained herein without notice. XP1027-BD Power Amplifier 27.0-31.0 GHz Rev. V1 App Note [1] Biasing - It is recommended to separately bias each amplifier stage Vd1 through Vd3 at Vd(1,2,3) =5.5V with Id1=250mA, Id2=625mA and Id3=1185mA. Separate biasing is recommended if the amplifier is to be used in a linear application or at high levels of saturation, where gate rectification will alter the effective gate control voltage. For non-critical applications it is possible to parallel all stages and adjust the common gate voltage for a total drain current Id(total)=2060mA. [Linear Applications] - For applications where the amplifier is being used in linear operation, where best IM3 (ThirdOrder Intermod) performance is required at more than 5dB below P1dB, it is also recommended to use active gate biasing to keep the drain currents constant as the RF power and temperature vary; this gives the best performance and most reproducible results. Depending on the supply voltage available and the power dissipation constraints, the bias circuit may be a single transistor or a low power operational amplifier, with a low value resistor in series with the drain supply used to sense the current. The gate voltage of the pHEMT is controlled to maintain correct drain current compensating for changes over temperature. [Saturated Applications] - For applications where the amplifier RF output power is saturated, the optimum drain current will vary with RF drive and each amplifier stage is best operated at a constant gate voltage. Significant gate currents will flow at saturation and bias circuitry must allow for drain current growth under this condition to achieve best RF output power and power added efficiency. Additionally, if the input RF power level will vary significantly, a more negative gate voltage will result in less die heating at lower RF input drive levels where the absence of RF cooling becomes significant. Note under this bias condition, gain will then vary with RF drive NOTE! - For any application it is highly recommended to bias the output amplifier stage from both sides for best RF and thermal performance. CAUTION! - Also, make sure to properly sequence the applied voltages to ensure negative gate bias (Vg1,2,3) is available before applying the positive drain supply (Vd1,2,3). Additionally, it is recommended that the device gates are protected with Silicon diodes to limit the applied voltage. App Note [2] Bias Arrangement [For Individual Stage Bias] (recommended for linear/saturated applications) - Each DC pad (Vd1,2,3 and Vg1,2,3) needs to have DC bypass capacitance (100-200 pF) as close to the device as possible. Additional DC bypass capacitance (1 nF and 3.3 uF) is also recommended. All DC pads have been tied together on chip and device can be biased from either side. [For Parallel Stage Bias] (general applications) - The same as Individual Stage Bias but all the drain or gate pad DC bypass capacitors (100-200 pF) are tied together at one point after bypass capacitance. Additional DC bypass capacitance (1 nF and 3.3 uF) is also recommended to all DC or combination (if gate or drains are tied together) of DC bias pads. All DC pads have been tied together on chip and can be biased from either side. NOTE! In either arrangement, for most stable performance all unused DC pads must also be bypassed with at least 100-200 pf capacitance. 11 ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions • North America Tel: 800.366.2266 • Europe Tel: +353.21.244.6400 is considering for development. Performance is based on target specifications, simulated results, • India Tel: +91.80.43537383 • China Tel: +86.21.2407.1588 and/or prototype measurements. Commitment to develop is not guaranteed. Visit www.macomtech.com for additional data sheets and product information. PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make Commitment to produce in volume is not guaranteed. changes to the product(s) or information contained herein without notice. XP1027-BD Power Amplifier 27.0-31.0 GHz Rev. V1 App Note [3] Material Stack-Up – In addition to the practical aspects of bias and bias arrangement, device base material stack-up also must be considered for best thermal performance. A well thought out thermal path solution will improve overall device reliability, RF performance and power added efficiency. The photo shows a typical high power amplifier carrier assembly. The material stack-up for this carrier is shown below. This stackup is highly recommended for most reliable performance however, other materials (i.e. eutectic solder vs epoxy, copper tungsten/copper moly rib, etc.) can be considered/ possibly used but only after careful review of material thermal properties, material availability and end application performance requirements. MMIC, 4mil Alumina Subst rate Diemat DM6030HKEpoxy, ~1mil AuSn Eutect ic Solder MOLYRib, 5mil, Au plated MOLYCarrier, 25mil Au plat ed Copper Block 12 ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions • North America Tel: 800.366.2266 • Europe Tel: +353.21.244.6400 is considering for development. Performance is based on target specifications, simulated results, • India Tel: +91.80.43537383 • China Tel: +86.21.2407.1588 and/or prototype measurements. Commitment to develop is not guaranteed. Visit www.macomtech.com for additional data sheets and product information. PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make Commitment to produce in volume is not guaranteed. changes to the product(s) or information contained herein without notice. XP1027-BD Power Amplifier 27.0-31.0 GHz Rev. V1 Handling Procedures Please observe the following precautions to avoid damage: Static Sensitivity Gallium Arsenide Integrated Circuits are sensitive to electrostatic discharge (ESD) and can be damaged by static electricity. Proper ESD control techniques should be used when handling these class 2 devices. 13 ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions • North America Tel: 800.366.2266 • Europe Tel: +353.21.244.6400 is considering for development. Performance is based on target specifications, simulated results, • India Tel: +91.80.43537383 • China Tel: +86.21.2407.1588 and/or prototype measurements. Commitment to develop is not guaranteed. Visit www.macomtech.com for additional data sheets and product information. PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make Commitment to produce in volume is not guaranteed. changes to the product(s) or information contained herein without notice.