[AP4410AEC]
AP4410AEC
Ultra Low Power Dual Voltage Detector
1. General Description
The AP4410AEC is a voltage detector IC for monitoring battery, power supply and system voltage. The
circuit includes dual voltage detection with built-in gate logic and MOSFETs. The AP4410AEC offers
ultra-low power consumption that is 0.026μA per channel.
The built- in CMOS logic circuit can be controlled independently from the voltage detector. The polarity of
the voltage detection results is controlled by pins. This function enables the AP4410AEC as a load switch
by using the results of the voltage detection. The AP4410AEC achieves better performance and PCB
area than conventional CMOS voltage detector ICs, with discrete logics and external MOSFETs.
The AP4410AEC is ideal for voltage conversion or load switch of thin and small wearable devices, over
charge/discharge protection of Lithium-ion batteries, power management part of energy harvesting
applications.
2. Features
Power management function
Dual voltage detection circuits
Control logic with independent power supply
Built in P-channel MOSFETs and N-Channel MOSFETs for each channel
Wide range for detection voltage
Detection voltage “High”
1.8 to 2.7V (Options)
Detection voltage “Low”
1.7 to 2.65V (Options)
Voltage detection accuracy
±35mV
Ultra-low power consumption
0.026μA typical/ch. 0.050μA maximum/ ch
Response Speed
500μs maximum
On resistance
On-chip P-channel MOSFETs 1Ω typical
On-chip N-channel MOSFETs 2Ω typical
Operation temperature
-40 - +85 °C
Package
20-pin WLCSP (1.955×1.555mm, 0.4mm pitch)
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3. Table of Contents
1.
2.
3.
4.
5.
General Description ............................................................................................................................. 1
Features............................................................................................................................................... 1
Table of Contents ................................................................................................................................ 2
Block Diagram ..................................................................................................................................... 3
Pin Configuration and Function ........................................................................................................... 4
Pin Configuration ............................................................................................................................. 4
Function ........................................................................................................................................... 4
6. Absolute Maximum Ratings................................................................................................................. 5
7. Recommended Operating Conditions ................................................................................................. 5
8. Electrical Characteristics ..................................................................................................................... 6
9. Description........................................................................................................................................... 7
Voltage Detection Function .............................................................................................................. 7
10. Reference Data ................................................................................................................................ 9
Detection Voltage “High” (VDETH) and “Low” (VDETL) vs VIN ...................................................... 9
Detection Voltage “High” (VDETH) and “Low” (VDETL) vs Ta...................................................... 10
Current consumption vs VIN & VDD ............................................................................................. 11
Power Comsumption vs Ta (VIN=VDD=5.5V) .............................................................................. 11
Response time (tPLH, tPHL) ......................................................................................................... 12
11. Package ......................................................................................................................................... 16
Outline Dimensions ........................................................................................................................ 16
Marking .......................................................................................................................................... 16
12. Revision History ............................................................................................................................. 17
IMPORTANT NOTICE.............................................................................................................................. 18
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4. Block Diagram
Channel 1
Channel 2
Figure 1. Block Diagram
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5. Pin Configuration and Function
Pin Configuration
・20-pin WLCSP
TOP View
4
VIN1
EN1
TEST4
EN2
VIN2
3
OUT1
TEST1
TEST3
TEST5
OUT2
2
VDD1
POL1
TEST2
POL2
VDD2
1
PMOS1D
NMOS1D
VSS
NMOS2D
PMOS2D
A
B
C
D
E
Function
WLCSP Pin
A1
A2
A3
A4
B1
B2
B3
B4
C1
C2
C3
C4
D1
D2
D3
D4
E1
E2
E3
E4
Pin Name
PMOS1D
VDD1
OUT1
VIN1
NMOS1D
POL1
TEST1
EN1
VSS
TEST2
TEST3
TEST4
I/O
Input/Output
Power
Output
Power
Output
Input
Input
Ground
-
NMOS2D
POL2
TEST5
EN2
PMOS2D
VDD2
OUT2
VIN2
Output
Input
Input
Input / Output
Power
Output
Power
017010700-E-01
Function
PMOS drain pin (Channel 1)
Power supply(Channel 1)
Logic output (Channel 1)
Detection input pin (Channel 1)
NMOS1 drain pin(Channel 1)
Polarity cotrol pin (Channel 1)
For test purposes. This pin should be connected to VSS.
Enable pin (Channel 1)
Ground
For test purposes. This pin should be connected to VSS.
For test purposes. This pin should be connected to VSS.
For test purposes. This pin should be connected to VSS.
NMOS drain pin(Channel 2)
Polarity cotrol pin (Channel 2)
For test purposes. This pin should be connected to VSS.
Enable pin (Channel 2)
PMOS drain pin (Channel 2)
Power supply(Channel 2)
Logic output (Channel 2)
Detection input pin (Channel 2)
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6. Absolute Maximum Ratings
Parameter
Symbol
min
VIN1,VIN2,
-0.3
VDD1,VDD2
OUT1,EN1,POL1
VSS-0.3
Pin Voltage
OUT2,EN2,POL2
VSS-0.3
(Note 1)
PMOS1D
-0.3
PMOS2D
NMOS1D
-0.3
NMOS2D
Power dissipation
Pd
Storage Temperature
Tstg
-55
Note 1. All voltages are with reference to VSS = 0 V.
max
Unit
6.5
V
VDD1 + 0.3
VDD2 + 0.3
V
V
6.5
V
6.5
V
0.8
150
W
C
WARNING: Stresses exceeding Maximum Ratings may damage the device. Normal operation is not
guarantee if the condition exceeds the maximum rating.
7. Recommended Operating Conditions
Parameter
Operation Temperature
Power Supply Volgtage
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Symbol
Ta
VIN1
VIN2
VDD1
VDD2
-5-
min
-40
max
85
Unit
C
1.3
5.5
V
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[AP4410AEC]
8. Electrical Characteristics
(Ta= -40 - +85C, VIN1, VIN2, VDD1 and VDD2 =1.3V to 5.5V, OUT=open, PMOSD=open, NMOSD=open,
unless otherwise specified.)
Parameter
Detection Voltage “High”
Symbol
min
typ
VDETH
-0.035
max
Unit
VDETH
+0.035
V
VDETH
-0.045
VDETH
+0.045
V
VDETL
-0.035
VDETL
+0.035
V
VDETL
+0.045
V
VDETH
VDETH
Detection Voltage ”Low”
VDETL
VDETL
VDETL
-0.045
Power Consumption
“High”Level Input Voltage
“Low” Level Input Voltage
EN pin reverse current
(Push, Pull)
IOH (Note 4)
IOL(Note 4)
Response Time
(Note 5)
IVIN
-
0.026
0.050
μA
IVDD
(Note 2)
(Note 3)
-
0.0001
0.100
μA
VIH
VDD
×0.8
-
-
V
VIL
-
-
VDD
×0.2
V
| IEN |
0.15
-
μA
IOH
0.15
-
-
mA
IOL
0.2
-
-
0.2
0.5
0.2
0.5
tPLH
tPHL
-
Condition
Ta=25C
VIN= “L”→”H”
Please refer 10. Reference
data (Detection Voltage vs Ta)
Ta=85C
VIN= “L”→”H”
Please refer 10. Reference
data (Detection Voltage vs Ta)
Ta=25C
VIN= “H”→”L”
Please refer 10. Reference
data (Detection Voltage vs Ta)
Ta=85C
VIN= “H”→”L”
Please refer 10. Reference
data (Detection Voltage vs Ta)
Consumption for VIN per
channel while the voltage
detection circuit is active.
Please refer 10. Reference
data (Current consumption vs
VIN & VDD)
Consumption for VDD1 and
VDD2. Please refer 10.
Reference data (Current
consumption vs VIN & VDD)
VIN=VDETH+0.1V,
OUT=VDD-0.5V
VIN=VDETL-0.1V,
mA
OUT=0.5V
ms VIN=VDETH-0.1V→VDETH+0.1V
VIN= VDETL+0.1V→VDETL-0.1V
ms Please refer 10. Reference
data (Response time)
P-ch MOSFET
RonP
1
2.3
Ω VDD≧1.7V
On-resistance
N-ch MOSFET
RonN
2
5
Ω VDD≧1.7V
On-resistance
Note 2. Output drive is not included.
Note 3. Total power consumption VDD1 and VDD2 (VDD1+VDD2).
Note 4. Output current depends on VDD1 and VDD2.
IOL shows N-Channel pull current when AP4410AEC OUT1/OUT2 output low.
IOH shows P-Channel push current when AP4410AEC OUT1/OUT2 output high.
Note 5. Response time for OUT1 pin and OUT2 pin
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9. Description
Voltage Detection Function
VIN1 pin and VIN2 pin = (Abbreviation ;VIN)
VDD1 pin and VDD2 pin = (Abbreviation ;VDD)
POL1 pin and POL2 pin = (Abbreviation ;POL)
EN1 pin and EN2 pin = (Abbreviation ;EN)
1) When the input volgatge is increasing,
The OUT1 pin and OUT2 pin(Abbreviation ;OUT) will be in undefined status when VIN voltage is from
VSS to AP4410AEC minimum operating voltage(1.3V). The AP4410AEC internal signal A(Please refer
Figure 2) outputs VSS when VIN volgate exceeds minimum operating voltage. When VIN voltage
reaches to the detection voltage (VDETH), the internal signal A outputs VIN voltage.
2) When the input voltage is decreasing,
When VIN voltage is higher than VDETH, internal signal A outputs VIN. When VIN goes under the
detection voltage (VDETL), OUT outputs VSS. The internal signal A will be undefined status when VIN
voltege becomes lower than AP4410AEC minimum operating voltage(1.3V).
The logic inputs POL and EN become valid when VDD voltage exceeds 1.3V which is the minimum
operation voltage. In case of POL = “L”, EN=”H”, OUT behaves as Figure. 3. The AP4410AEC is able to
output the inverted results of the voltage detection using POL. EN can control P-channel MOSFET and
N-channel MOSFET ON and OFF. EN has latch function so that it keeps its present state if the input
becomes Hi-Z. The BULK of the P-channel MOSFET is connected to the higher voltage pin between VDD
and PMOSD.
POL
EN
VDD
PMOSD
VIN
VDETH/L
OUT
NMOSD
VSS
Figure 2. Block Diagram of Control Logic Part (Each channel)
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VIN
VDETH
VDETL
Minimum
Operating Voltage
VSS
OUT
VSS
tPLH
tPHL
Figure 3.Function of AP4410AEC voltage detection
Table 1. Control logic truth table (Note 6)
POL
input
VIN
EN
input
Internal
signal A
Internal
signal B
Internal
signal C
PMOSD
NMOSD
OUT
Note
L
VINVDETL
H
H
H
L
H
OPEN
L
H
VIN≦VDETL
H
L
L
H
OPEN
L
H
OUT=
negative
polarity
H
VIN≦VDETL
L
L
L
H
OPEN
L
H
-
OUT= positive
polarity
Note 7. When the VIN voltage is decreasing from VDETH or higher.
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10. Reference Data
Detection Voltage “High” (VDETH) and “Low” (VDETL) vs VIN
1) VDETH=2.5V, VDETL=2.1V (POL=”L”)
Figure 4. VDD=VIN
Figure 5. VDD=5.5V
2) VDETH=1.8V, VDETL=1.7V (POL=”L”)
Figure 6. VDD=VIN
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Figure 7. VDD=5.5V
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Detection Voltage “High” (VDETH) and “Low” (VDETL) vs Ta
ΔVDET(mV) vs Ta
Figure 8. ΔVDET(mV) vs Ta
1) ΔVDET(%) vs Ta
Figure 9. ΔVDET(%) vs Ta
Note 8. ΔVDET(%)=ΔVDET/ VDET (V)
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Current consumption vs VIN & VDD
1) VDETH=2.5V, VDETL=2.1V (POL=”L”)
Figure 10. VDD=VIN
Figure 11. VDD=5.5V
2) VDETH=1.8V, VDETL=1.7V (POL=”L”)
Figure 12. IVDD
Figure 13. IVIN
Power Comsumption vs Ta (VIN=VDD=5.5V)
Figure 14. IVDD
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Figure 15. IVIN
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Response time (tPLH, tPHL)
1) VDETH=2.5V, VDETL=2.1V (POL=”L”)
Figure 16. tPLH for VDETH=2.5V, VDETL=2.1V (POL=”L”), VDD=1.3V
Figure 17. tPLH for VDETH=2.5V, VDETL=2.1V (POL=”L”), VDD=5.5V
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Figure 18. tPHL for VDETH=2.5V, VDETL=2.1V (POL=”L”), VDD=1.3V
Figure 19. tPHL for VDETH=2.5V, VDETL=2.1V (POL=”L”), VDD=5.5V
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2) VDETH=1.8V, VDETL=1.7V (POL=”L”)
Figure 20. tPLH for VDETH=1.8V, VDETL=1.7V (POL=”L”), VDD=1.3V
Figure 21. tPLH for VDETH=1.8V, VDETL=1.7V (POL=”L”), VDD=5.5V
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Figure 22. tPHL for VDETH=1.8V, VDETL=1.7V (POL=”L”), VDD=1.3V
Figure 23. tPHL for VDETH=1.8V, VDETL=1.7V (POL=”L”), VDD=5.5V
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11. Package
Outline Dimensions
20-pin WLCSP (Unit: mm)
When the IC is exposed to light, it might affect the electrical characteristics of the IC due to
the light sensitivity of WLCSP package structures.
Marking
(1)
(2)
(3)
(4)
(5)
(6)
0AXX
(2)
(3)
Y WW Z
(4)
(5)
(6)
1 Pin Indication
Symbol of the detection voltage of system 1
Symbol of the detection voltage of system 2
Year code (last 1 digit)
Week code
Management code
(1)
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12. Revision History
Date (YY/MM/DD)
2017/09/07
2018/06/04
Revision
00
01
Page
1
6
7
8
16
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Contents
First Edition
1. General Description
detection → detector
2. Features
-40 - 85 °C → -40 - +85 °C
8. Electrical Characteristics
-40 to 85 °C → -40 - +85 °C
8. Electrical Characteristics
5,5V → 5.5V
9. Description
AP4410A→ AP4410AEC
9. Description
incrasing→ increasing
9. Description
Vref →VDET
9. Description
incrasing→ increasing
11. Package
updated
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IMPORTANT NOTICE
0. Asahi Kasei Microdevices Corporation (“AKM”) reserves the right to make changes to the
information contained in this document without notice. When you consider any use or application
of AKM product stipulated in this document (“Product”), please make inquiries the sales office of
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information contained in this document in your product design or applications. AKM ASSUMES
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