Monolithic Hall Effect ICs EM-series
EM-0712
Shipped in packet-tape reel(5000pcs/Reel)
EM-0712 is ultra-small Hall effect ICs of a single silicon chip composed of Hall element and a signal processing IC.
Bipolar Hall
Supply Voltage
Power down
Effect Latch
1.6∼5.5V
Function
Output
Ultra High
Sensitivity
Bop:1.8mT
SON
CMOS
Notice:It is requested to read and accept "IMPORTANT NOTICE" written on the back of the front cover of this catalogue.
●Operational Characteristics
Vout
N
H
VoH
Marking
1:VDD
1
2
2:VSS
Bh
3:PDN
L
VOL
S
4:OUT
S-pole
0
Brp
Bop
N-pole
Magnetic flux density
●Absolute Maximum Ratings(Ta=25℃)
Item
Symbol
Limit
Unit
−0.1 ∼ 6.0
V
●Functional Block Diagram
1:VDD
3:PDN
PDN input voltage
Vin −0.1 ∼ VDD+0.1
PDN input current
Iin
Switch
V
±10
mA
Output Current Iout
±0.5
mA
Operating Temperature Range Topr
−30 ∼ +85
℃
Storage Temperature Range Tstg
−40 ∼ +125
℃
Dynamic
Offset Cancellation
Supply Voltage VDD
4:OUT
Oscillator Hall
Chopper
Amplifier
&
Element Stabilizer
Timing
Schmitt
Trigger
&
Latch
Logic
2:VSS
Output
Stage
●Magnetic q and Electrical Characteristics(Ta=25℃ VDD=3.0V)
Item
Symbol Conditions
Supply Voltage VDD
Min.
Brp
Hysteresis
Bh
Unit
5.5
V
4.0
mT
PDN input Pluse Width
−1.8
mT
Pulse Drive Time TPD4
3.6
mT
1.6
Operating Point BOP
Release Point
Max.
Typ.
1.8
−4.0
PDN input High voltage VIH
0.7VDD
V
PDN input Low voltage VIL
0.3
Output High Voltage VOH
Io=−0.5mA VDD −0.4
Output Low Voltage VOL
Io=+0.5mA
Supply Current1*2
IDD1 PDN=L
Supply Current2*2
IDD2 PDN=H,Average
V
V
0.4
V
1
μA
150
μA
1
μA
PDN mode transition time1 TPD1 Active→PDN
(36.6)
μsec
PDN mode transition time2 TPD2 PDN→Active
100
μsec
PDN input Current
Iin
60
−1
Item
Symbol
Pulse Drive Period TPD3
Conditions
Min.
PDN=H
0.5
1.0
1.5
100
TW
PDN=H
12.2
msec
μsec
24.4
36.6 μsec
●Magnetic Characteristics w(Ta=−30∼+85℃ VDD=3.0V)
Item
Symbol
Conditions
Min.
Operating Point BOP
Release Point
Brp
Hysteresis
Bh
Typ. Max. Unit
1.8
−4.2 −1.8
Note) The above specifications are design targets.
1[mT]=10[Gauss]
*1: Positive(“ +”) polarity flux is defined as the magnetic flux from south pole which is direct toward to the branded face of the sensor(Bop,
Brp)
*2: In case of PDN pin is held at VDD or VSS.
*3: This transition time is not guarantee
17
Typ. Max. Unit
3.6
4.2
mT
mT
mT
EM-0712
•Please be aware that our products are not intended for use in life support equipment, devices, or systems. Use of our products in such applications requires the
advance written approval of our sales staff.
Certain applications using semiconductor devices may involve potential risks of personal injury, property damage, or loss of life. In order to minimize these risks,
adequate design and operating safeguards should be provided by the customer to minimize inherent or procedural hazards. Inclusion of our products in such
applications is understood to be fully at the risk of the customer using our devices or systems.
●Package(Unit:mm)
φ0.3
Sensor Center
0.15±0.1
2
3
0.3
0.75
4
0.05
2
Pin No.
1
2
3
4
0.50+0
−0.1
0.3
3
c
1
1.3
0.3
4
0.75
1
1.8±0.1
1
0.45±0.1
0.25±0.1
1.2±0.1
●(For reference only)Land Pattern(Unit:mm)
Pin Name Function
VDD Supply Voltage
VSS
GND
PDN Power Down
OUT Output Voltage
※Note1) The sensor center is located within the φ0.3mm
circle.
Note2) The tolerances of dimensions with no mentions is
±0.1mm.
Note3) Coplanarity:The differnces between standoff of
terminals are max.50μm.
Note4) Shaded area is plating area
Note5) The center shadow area of the bottom of HIC
does not need to be soldered.
This area shares the lead frame with VSS inside
the package and please be careful not to short
this area to pins except No.2.
●Application Circuit
VDD
VDD
Bypass Capacitor
0.1μF
GND
VSS
OUT
CMOS
OUTPUT
EM-0712
PDN
CMOS
INPUT
g
●Function Timing Chart2(PDN=H)
●Function Timing Chart1
IDD
Bop
0
Brp
IDD
TPD3
Time
TPD4
PDN
t
B
t
B
Brp
Bop
OUT
H or L
t
Vout
TPD 2(∼100μs)
TPD 2(∼100μs)
t
Vout
k
High
High
IDD
Low
Low
TPD1(∼36.6μs)
TPD1(∼36.6μs)
t
Operating Point Timing
Release Point Timing
t
Note1) In power down mode, Output is kept current status.
Note2) When VDD is supplied ,output settling time after
power supply voltage exceeds 1.6V is equal to TPD2.
●Supply Voltage
●Temparature Dependence of Bop. Brp
4
6
Operating Point[mT]
Supply Voltage[V]
4
3
2
1
n
VDD=3V
3
5
Bop
2
o
1
0
p
−1
Brp
−2
−3
0
−40
−20
0
20
40
60
Ambient Temperature[℃]
80
100
−4
−40
−20
0
20
40
60
80
100
Ambient Temperature[℃]
18
IMPORTANT NOTICE
These products and their specifications are subject to change without notice.
When you consider any use or application of these products, please make
inquiries the sales office of Asahi Kasei Microdevices Corporation (AKM) or
authorized distributors as to current status of the products.
Descriptions of external circuits, application circuits, software and other related
information contained in this document are provided only to illustrate the
operation and application examples of the semiconductor products. You are
fully responsible for the incorporation of these external circuits, application
circuits, software and other related information in the design of your
equipments. AKM assumes no responsibility for any losses incurred by you or
third parties arising from the use of these information herein. AKM assumes no
liability for infringement of any patent, intellectual property, or other rights in
the application or use of such information contained herein.
Any export of these products, or devices or systems containing them, may
require an export license or other official approval under the law and
regulations of the country of export pertaining to customs and tariffs, currency
exchange, or strategic materials.
AKM products are neither intended nor authorized for use as critical
componentsNote1) in any safety, life support, or other hazard related device or
systemNote2), and AKM assumes no responsibility for such use, except for the
use approved with the express written consent by Representative Director of
AKM. As used here:
Note1) A critical component is one whose failure to function or perform
may reasonably be expected to result, whether directly or indirectly, in the
loss of the safety or effectiveness of the device or system containing it,
and which must therefore meet very high standards of performance and
reliability.
Note2) A hazard related device or system is one designed or intended for
life support or maintenance of safety or for applications in medicine,
aerospace, nuclear energy, or other fields, in which its failure to function
or perform may reasonably be expected to result in loss of life or in
significant injury or damage to person or property.
It is the responsibility of the buyer or distributor of AKM products, who
distributes, disposes of, or otherwise places the product with a third party, to
notify such third party in advance of the above content and conditions, and
the buyer or distributor agrees to assume any and all responsibility and
liability for and hold AKM harmless from any and all claims arising from the
use of said product in the absence of such notification.
June 2, 2010
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