EM1712

Monolithic Hall Effect ICs　EM-series EM-1712 Shipped in packet-tape reel(5000pcs/Reel) EM-1712 is ultra-small Hall effect ICs of a single silicon chip composed of Hall element and a signal processing IC. Bipolar Hall Supply Voltage Power down Effect Latch 1.6～5.5Ｖ Function Ultra High Sensitivity Bop：1.8mT Output SMT CMOS Notice:It is requested to read and accept "IMPORTANT NOTICE" written on the back of the front cover of this catalogue. ●Operational Characteristics VOUT H S VOH Marking 1 2 Bh L VOL N-pole N 0 Brp Magnetic flux density ●Absolute Maximum Ratings（Ta=25℃） Symbol Min. Max. Unit Supply Voltage VDD −0.1 6.0 V PDN input voltage VIN −0.1 VDD＋0.1 V PDN input current IIN −10 ＋10 mA Output Current IOUT −0.5 ＋0.5 mA Storage Temperature Range TSTG −40 ＋125 ℃ ●Functional Block Diagram 1：VDD 3：PDN Switch Dynamic Offset Cancellation Item S-pole Bop ●Recommended Operating Conditions Item Symbol Min. Typ. Max. Unit Supply Voltage VDD 1.6 3.0 5.5 V −30 ＋25 ＋85 ℃ Operating Temperature Range Topr Oscillator Hall Chopper Amplifier & Element Stabilizer Timing Logic Item ●Magnetic ① and Electrical Characteristics（Ta=25℃ VDD=3.0V） Item Symbol Conditions Operating Point *1 Bop Releasing Point *1 Brp Hysteresis Bh PDN input High voltage VIH PDN input Low voltage VIL −4.0 Typ. Max. Unit 1.8 4.0 mT −1.8 mT 3.6 mT 0.7VDD V 0.3 Output High Voltage VOH Io=−0.5mA Output Low Voltage Io=＋0.5mA VOL Min. Supply Current1*2 IDD1 PDN=L Supply Current2*2 IDD2 PDN=H,Average PDN input Current IIN VDD −0.4 0.4 −1 V V 60 2：OUT V 1 μA 150 μA 1 μA PDN mode transition time１*3 TPD1 Active→PDN (36.6) μs PDN mode transition time2 TPD2 PDN→Active 100 μs 1 ［mT］=10［Gauss］ Symbol Pulse Drive Period TPD3 PDN input Pluse Width Schmitt Trigger Latch Logic Conditions Min. PDN=H 0.5 TW Pulse Drive Time TPD4 Typ. Max. Unit 1.0 1.5 100 ms μs 12.2 24.4 PDN=H 36.6 μs ●Magnetic Characteristics ②（Ta=−30∼＋85℃ VDD=3.0V） Parameter Symbol Conditions Min. Operating Point Bop Releasing Point Brp Hysteresis Typ. Max. Unit 1.8 4.2 −4.2 −1.8 Bh mT mT 3.6 mT Note) The above specifications are design targets. ●Application Circuit VDD CMOS OUTPUT OUT VDD EM-1712 PDN Bypass Capacitor 0.1μF VSS CMOS INPUT ＊1: Positive(“ +”) polarity flux is defined as the magnetic flux from south pole which is direct toward to the branded face of the sensor （Bop， Brp） ＊2: In case of PDN pin is held at VDD or GND. ＊3: This transition time is not guarantee 37 4：VSS Output Stage GND EM-1712 •Please be aware that our products are not intended for use in life support equipment, devices, or systems. Use of our products in such applications requires the advance written approval of our sales staff. Certain applications using semiconductor devices may involve potential risks of personal injury, property damage or loss of life. In order to minimize these risks, adequate design and operating safeguards should be provided by the customer to minimize inherent or procedural hazards. Inclusion of our products in such applications is understood to be fully at the risk of the customer using our devices or systems. 2.1 1.3 0.3 1 2.1±0.2 1.25 φ0.3 Sensor center 0∼0.1 5° 5° 0.1 Sensor center 0.4 ＋0.1 0.55−0 0.3 0.25 5° 4 0.05 1.90 3 5° Pin No. 1 2 3 4 0.50 Pin Name Function VDD Power Supply OUT Output PDN Power Down VSS Ground Note1) The sensor center is located within the φ0.3mm circle. Note2) The tolerances of dimensions with no mentions is ±0.1mm. Note3) Coplanarity:The differences between standoff of terminals are max.0.1mm. Note4) The sensor part is located 0.4mm(typ.) far from marking surface. g 1.30 ●Function Timing Chart 2（PDN＝H） ●Function Timing Chart 1 B［mT］ S Bop 0 Brp N VPDN［V］ IDD IDD TPD3 TPD4 t t B t B Bop 0 j Brp t TPD2（＜100μs） VOUT［V］ 0 0.90 2 c ●(For reference only)Land Pattern（Unit:mm) 0.25 ●Package（Unit:mm) TPD2（＜100μs） t TPD1（＜36.6μs） IDD［mA］ t VOUT Undefined TPD1（＜36.6μs） High Low Low t 0 Operating Point Timing t Functional Timing t VOUT High Releasing Point Timing t Note1) During power down mode, output is latched in its previous state. Note2) When VDD is supplied, the time from reaching VDD= 1.6V to the update of the output state is equal to TPD2. ●Supply Voltage ●Temperature Dependence of Bop. Brp Operating Point ［mT］ Supply Voltage ［V］ VDD＝3V 3 5 4 3 2 1 0 −40 n 4 6 o Bop 2 1 p 0 −1 Brp −2 −3 −20 0 20 40 60 Ambient Temperature ［℃］ 80 100 −4 −40 −20 0 20 40 60 80 100 Ambient Temperature ［℃］ 38 IMPORTANT NOTICE ● These products and their specifications are subject to change without notice. When you consider any use or application of these products, please make inquiries the sales office of Asahi Kasei Microdevices Corporation (AKM) or authorized distributors as to current status of the products. ● Descriptions of external circuits, application circuits, software and other related information contained in this document are provided only to illustrate the operation and application examples of the semiconductor products. You are fully responsible for the incorporation of these external circuits, application circuits, software and other related information in the design of your equipments. AKM assumes no responsibility for any losses incurred by you or third parties arising from the use of these information herein. AKM assumes no liability for infringement of any patent, intellectual property, or other rights in the application or use of such information contained herein. ● Any export of these products, or devices or systems containing them, may require an export license or other official approval under the law and regulations of the country of export pertaining to customs and tariffs, currency exchange, or strategic materials. ● AKM products are neither intended nor authorized for use as critical componentsNote1) in any safety, life support, or other hazard related device or systemNote2), and AKM assumes no responsibility for such use, except for the use approved with the express written consent by Representative Director of AKM. As used here: Note1) A critical component is one whose failure to function or perform may reasonably be expected to result, whether directly or indirectly, in the loss of the safety or effectiveness of the device or system containing it, and which must therefore meet very high standards of performance and reliability. Note2) A hazard related device or system is one designed or intended for life support or maintenance of safety or for applications in medicine, aerospace, nuclear energy, or other fields, in which its failure to function or perform may reasonably be expected to result in loss of life or in significant injury or damage to person or property. ● It is the responsibility of the buyer or distributor of AKM products, whodistributes, disposes of, or otherwise places the product with a third party, to notify such third party in advance of the above content and conditions, and the buyer or distributor agrees to assume any and all responsibility and liability for and hold AKM harmless from any and all claims arising from the use of said product in the absence of such notification. April 1, 2015