EW6672

Hybrid Hall Effect ICs　EW-series EW-6672 Shipped in packet-tape reel(3000pcs/Reel) EW-6672 is composed of a Ultra-high sensitive InSb Hall element and a signal processing IC chip in a package. Unipolar Hall Supply Voltage Effect Switch 2.4～3.3Ｖ Hall Element Pulse Excitation Ultra High Sensitivity Output Bop：1.5mT CMOS SMT Notice:It is requested to read and accept "IMPORTANT NOTICE" written on the back of the front cover of this catalogue. ●Operational Characteristics VOUT S H VOH Marking Bh L VOL N N-pole 0 Brp S-pole Bop Magnetic flux density ●Functional Block Diagram 1：VDD Switch Symbol Min. Max. Unit Supply Voltage VDD −0.1 5.0 V Output H Voltage IOUT −1.0 ＋1.0 mA Storage Temperature Range TSTG −40 ＋125 ℃ Item Dynamic Offset Cancellation ●Absolute Maximum Ratings（Ta=25℃） OSC Hall Chopper & Element SW Timing Logic 3：OUT AMP Schmitt Trigger Latch Logic Output Stage 2：VSS ●Recommended Operating Conditions Item Symbol Min. Typ. Max. Unit Supply Voltage VCC 2.4 3.0 3.3 V −30 ＋25 ＋85 ℃ Operating Temperature Range Topr ●Magnetic Characteristics ②（Ta=−30∼＋85℃ VDD=3V） ●Magnetic ① and Electrical Characteristics（Ta=25℃ VDD=3V） Item Symbol Conditions Min. Typ. Max. Unit Item Symbol Conditions Min. Typ. Max. Unit Operating Point Bop 0.9 1.5 2.9 mT Operating Point Bop 1.0* 1.5 2.3 mT Releasing Point Brp 0.8 1.2 2.3 mT Releasing Point Brp 0.8 1.2 1.9* mT Hysteresis Bh 0.1 0.3 0.8 mT Hysteresis Bh 0.1* 0.3 0.6* mT P e r i o d Tp 50 100 ms Output High Voltage VOH Io=−1.0mA Output Low Voltage VOL Io=＋1.0mA Supply Current IDD Average V VDD −0.4 The characteristics with 「*」marks are design targets. 5 0.4 V 10 μA Note) The above specifications are design targets. ●Application Circuit GND Bypass Capacitor 0.1μF VDD 1 ［mT］=10［Gauss］ VDD 53 VSS EW-6672 OUT CMOS EW-6672 •Please be aware that our products are not intended for use in life support equipment, devices, or systems. Use of our products in such applications requires the advance written approval of our sales staff. Certain applications using semiconductor devices may involve potential risks of personal injury, property damage or loss of life. In order to minimize these risks, adequate design and operating safeguards should be provided by the customer to minimize inherent or procedural hazards. Inclusion of our products in such applications is understood to be fully at the risk of the customer using our devices or systems. a ●Package（Unit:mm) ●(For reference only)Land Pattern（Unit:mm) 1.00 ° ° 0.70 0.70 ° ° 2.60 φ0.3 Sensor center Sensor center ° Pin Name Function VDD Power Supply VSS Ground OUT Output Pin No. 1 2 3 ° 0.3 ° 1.00 ± 0.95 0.95 Note1) The sensor center is located within the φ0.3mm circle. Note2) The tolerances of dimensions with no mentions is ±0.1mm. Note3) The sensor part is located 0.3mm(typ.) far from marking surface. ° ●Supply Voltage g ●IDD Pulse Driving（VDD=3V） 3.4 50ms（typ.） IDD i 12μs（typ.） 3.2 Supply Voltage ［V］ 0.70 IDD ON （TYP : 3mA） 3 2.8 2.6 IDD （TYP : 5μA） 2.4 2.2 −40 IDD OFF （TYP : 4μA） −20 0 20 40 60 80 time 100 Ambient Temperature ［℃］ ●Temperature Dependence of Bop. Brp ●Function Timing Chart IDD Operating Point ［mT］ 6 5 4 B 3 t Bop 2 VOUT High Brp −20 0 20 40 60 Ambient Temperature ［℃］ 80 100 B t Brp Bop 1 0 −40 IDD VDD＝3V t VOUT High t Low Low Operating Point Timing t Releasing Point Timing t 54 o IMPORTANT NOTICE 0. Asahi Kasei Microdevices Corporation (“AKM”) reserves the right to make changes to the information contained in this document without notice. When you consider any use or application of AKM product stipulated in this document (“Product”), please make inquiries the sales office of AKM or authorized distributors as to current status of the Products. 1. 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This document may not be reproduced or duplicated, in any form, in whole or in part, without prior written consent of AKM. Rev.1