ADVANCED
LINEAR
DEVICES, INC.
ALD1101A/ALD1101B
ALD1101
DUAL N-CHANNEL MATCHED MOSFET PAIR
GENERAL DESCRIPTION
APPLICATIONS
The ALD1101 is a monolithic dual N-channel matched transistor pair
intended for a broad range of analog applications. These enhancementmode transistors are manufactured with Advanced Linear Devices'
enhanced ACMOS silicon gate CMOS process.
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The ALD1101 offers high input impedance and negative current temperature coefficient. The transistor pair is matched for minimum offset voltage
and differential thermal response, and it is designed for switching and
amplifying applications in +2V to +10V systems where low input bias
current, low input capacitance and fast switching speed are desired.
Since these are MOSFET devices, they feature very large (almost infinite)
current gain in a low frequency, or near DC, operating environment.
When used with an ALD1102, a dual CMOS analog switch can be
constructed. In addition, the ALD1101 is intended as a building block for
differential amplifier input stages, transmission gates, and multiplexer
applications.
The ALD1101 is suitable for use in precision applications which require
very high current gain, beta, such as current mirrors and current sources.
The high input impedance and the high DC current gain of the Field Effect
Transistors result in extremely low current loss through the control gate.
The DC current gain is limited by the gate input leakage current, which is
specified at 50pA at room temperature. For example, DC beta of the
device at a drain current of 5mA at 25°C is = 5mA/50pA = 100,000,000.
Precision current mirrors
Precision current sources
Analog switches
Choppers
Differential amplifier input stage
Voltage comparator
Data converters
Sample and Hold
Analog inverter
PIN CONFIGURATION
SOURCE 1
1
8
SUBSTRATE
GATE 1
2
7
SOURCE 2
DRAIN 1
3
6
GATE 2
IC
4
5
DRAIN 2
TOP VIEW
SAL, PAL PACKAGES
FEATURES
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* IC pin is internally connected. Do not connect externally.
Low threshold voltage of 0.7V
Low input capacitance
Low Vos grades -- 2mV, 5mV, 10mV
High input impedance -- 1012Ω typical
Negative current (IDS) temperature coefficient
Enhancement-mode (normally off)
DC current gain 109
RoHS compliant
BLOCK DIAGRAM
GATE 1 (2)
ORDERING INFORMATION (“L” suffix denotes lead-free (RoHS))
Operating Temperature Range*
0°C to +70°C
0°C to +70°C
SOURCE 1 (1)
DRAIN 1 (3)
SUBSTRATE (8)
8-Pin
SOIC
Package
8-Pin
Plastic Dip
Package
ALD1101ASAL
ALD1101BSAL
ALD1101SAL
ALD1101APAL
ALD1101BPAL
ALD1101PAL
SOURCE 2 (7)
DRAIN 2 (5)
GATE 2 (6)
* Contact factory for high temperature versions.
©2021 Advanced Linear Devices, Inc., Vers. 2.2
www.aldinc.com
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ABSOLUTE MAXIMUM RATINGS
Drain-source voltage, VDS
Gate-source voltage, VGS
Power dissipation
Operating temperature range SAL, PAL packages
Storage temperature range
Lead temperature, 10 seconds
CAUTION: ESD Sensitive Device. Use static control procedures in ESD controlled environment.
10V
10V
500mW
0°C to +70°C
-65°C to +150°C
+260°C
OPERATING ELECTRICAL CHARACTERISTICS
TA = 25°C unless otherwise specified
Parameter
Symbol
ALD1101A
Min Typ
Max
ALD1101B
Min Typ Max
ALD1101
Min Typ Max
Unit
Gate Threshold
Voltage
VT
0.4
0.4
0.4
1.0
V
IDS = 10µA VGS = VDS
10
mV
IDS = 100µA VGS = VDS
Offset Voltage
VGS1 - VGS2
VOS
IDS(ON)
Transconductance Gfs
1.0
0.7
2
Gate Threshold
TCVT
Temperature Drift
On Drain Current
0.7
1.0
0.7
5
-1.2
-1.2
-1.2
Test
Conditions
mV/°C
25
40
25
40
25
40
mA
VGS = VDS = 5V
5
10
5
10
5
10
mmho
VDS = 5V IDS = 10mA
Mismatch
∆Gfs
0.5
0.5
0.5
%
Output
Conductance
GOS
200
200
200
µmho
VDS = 5V IDS = 10mA
Drain Source
ON Resistance
RDS(ON)
50
Ω
VDS = 0.1V VGS = 5V
Drain Source
ON Resistance
Mismatch
∆RDS(ON)
0.5
%
VDS = 0.1V VGS = 5V
Drain Source
Breakdown
Voltage
BVDSS
V
IDS = 10µA VGS = 0V
Off Drain Current
IDS(OFF)
Gate Leakage
Current
Input
Capacitance
75
50
75
50
0.5
10
75
0.5
10
10
0.1
4
4
0.1
4
4
0.1
4
4
nA
µA
VDS = 10V VGS = 0V
TA = 125°C
IGSS
1
100
10
1
100
10
1
100
10
pA
nA
VDS = 0V VGS = 10V
TA = 125°C
CISS
6
10
6
10
6
10
pF
ALD1101A/ALD1101B/ALD1101
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TYPICAL PERFORMANCE CHARACTERISTICS
OUTPUT CHARACTERISTICS
LOW VOLTAGE OUTPUT
CHARACTERISTICS
8
VBS = 0V
TA = +25°C
DRAIN SOURCE ON CURRENT
IDS(ON) (mA)
DRAIN SOURCE ON CURRENT
IDS(ON) (mA)
160
VGS = 10V
120
8V
80
6V
4V
40
2V
4
4V
2V
0
-4
-8
0
0
6
4
2
8
10
DRAIN SOURCE ON CURRENT
IDS(ON) (µA)
TA = +125°C
TA = +25°C
1 x 104
5 x 103
2 x 103
IDS = 1mA
1 x 103
0
TRANSFER CHARACTERISTIC
WITH SUBSTRATE BIAS
2
4
6
-2V
15
-4V
-6V
10
-8V
5
-10V
0
10
1.6
0.8
2.4
3.2
4.0
DRAIN SOURCE ON VOLTAGE - VDS(ON) (V)
GATE SOURCE ON VOLTAGE - VGS(ON) (V)
DRAIN SOURCE ON RESISTANCE vs.
GATE-SOURCE VOLTAGE
DRAIN SOURCE OFF CURRENT vs.
AMBIENT TEMPERATURE
10x10-6
10000
VDS = 0.2V
VBS = 0V
1000
TA = +125°C
100
TA = +25°C
10
0
VGS = VDS
TA = +25°C
VBS = 0V
0
8
DRAIN SOURCE OFF CURRENT
RDS(OFF) (A)
FORWARD TRANSCONDUCTANCE
(µmho)
IDS = 10mA
2 x 104
+160
20
VBS = 0V
f = 1KHz
5 x 104
+80
DRAIN SOURCE ON VOLTAGE - VDS(ON) (mV)
FORWARD TRANSCONDUCTANCE vs.
DRAIN-SOURCE VOLTAGE
1 x 105
0
-80
-160
DRAIN SOURCE ON VOLTAGE - VDS(ON) (V)
DRAIN SOURCE ON RESISTANCE
RDS(ON) (Ω)
VGS = 10V
8V
6V
VBS = 0V
TA = 25°C
2
4
6
8
VDS = 10V
VGS = VBS = 0V
10x10-9
10x10-12
10
GATE SOURCE ON VOLTAGE - VGS(ON) (V)
ALD1101A/ALD1101B/ALD1101
Advanced Linear Devices
-50
-25
0
+25
+50
+75
+100 +125
AMBIENT TEMPERATURE - TA (°C)
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TYPICAL APPLICATIONS
CURRENT SOURCE MIRROR
V+ = +5V
CURRENT SOURCE WITH GATE CONTROL
ALD1102,
1/2 ALD1107,
or ALD1117
ALD1102,
1/2 ALD1107,
or ALD1117
V+ = +5V
V+ = +5V
Q3
ISET
Q4
Q3
Q4
RSET
ISET
ISOURCE
ISOURCE
RSET
Digital Logic Control
of Current Source
Q1
Q2
ALD1101,
1/2 ALD1106,
or ALD1116
ISOURCE = ISET
V+ - Vt
=
RSET
4
~
= R
SET
ON
Q1
OFF
Q1, Q2: N-Channel MOSFET
Q3, Q4: P-Channel MOSFET
Q1 : N-Channel MOSFET
Q3, Q4: P-Channel MOSFET
CURRENT SOURCE MULTIPLICATION
DIFFERENTIAL AMPLIFIER
ALD1102,
1/2 ALD1107,
or ALD1117
V+
1/2 ALD1101,
1/4 ALD1106,
or 1/2 ALD1116
V+ = +5V
ISOURCE = ISET x N
PMOS PAIR
Q3
ISET
RSET
ISOURCE
Q4
VOUT
VIN+
Q1
Q2
NMOS PAIR
ALD1101,
1/2 ALD1106,
or ALD1116
Q1
Q2
Q3
QN
Current
Source
Q1, Q2: N-Channel MOSFET
Q3, Q4: P-Channel MOSFET
ALD1101A/ALD1101B/ALD1101
QSET
VIN-
QSET, Q1..QN: ALD1101, ALD1106, or ALD1116
N-Channel MOSFET
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TYPICAL APPLICATIONS (cont.)
BASIC CURRENT SOURCES
N-CHANNEL CURRENT SOURCE
P-CHANNEL CURRENT SOURCE
V+ = +5V
V+ = +5V
RSET
ISET
ISOURCE
ALD1102,
1/2 ALD1107,
or ALD1117
8
Q2 8
3
5
6
Q1
2
7
7
6
Q3
3
2
Q4
5
1
ISOURCE = ISET
V+ - Vt
=
RSET
V+ - 1.0
~
= R
SET
4
~
= R
SET
ALD1101,
1/2 ALD1106,
or ALD1116
ISOURCE
ISET
RSET
Q3, Q4: P-Channel MOSFET
Q1, Q2: N-Channel MOSFET
CASCODE CURRENT SOURCES
V+ = +5V
V+ = +5V
ISET
2 x ALD1102
or ALD1107
RSET
ISOURCE
Q4
Q1
Q2
Q3
Q4
Q3
Q1
Q2
ISET
2 x ALD1101
or ALD1106
ISOURCE = ISET =
Q1, Q2, Q3, Q4: N-Channel MOSFET
(ALD1101 or ALD1103)
ALD1101A/ALD1101B/ALD1101
RSET
ISOURCE
3
V+ - 2Vt ~
RSET = RSET
Q1, Q2, Q3, Q4: P-Channel MOSFET
(ALD1102 or ALD1103)
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SOIC-8 PACKAGE DRAWING
8 Pin Plastic SOIC Package
E
Millimeters
Dim
S (45°)
D
A
Min
1.35
Max
1.75
Min
0.053
Max
0.069
A1
0.10
0.25
0.004
0.010
b
0.35
0.45
0.014
0.018
C
0.18
0.25
0.007
0.010
D-8
4.69
5.00
0.185
0.196
E
3.50
4.05
0.140
0.160
1.27 BSC
e
A
A1
e
Inches
0.050 BSC
H
5.70
6.30
0.224
0.248
L
0.60
0.937
0.024
0.037
ø
0°
8°
0°
8°
S
0.25
0.50
0.010
0.020
b
S (45°)
H
L
ALD1101A/ALD1101B/ALD1101
C
ø
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PDIP-8 PACKAGE DRAWING
8 Pin Plastic DIP Package
Millimeters
E
E1
D
S
A2
A1
e
b
A
L
Dim
Min
Max
Min
Max
A
3.81
5.08
0.105
0.200
A1
0.38
1.27
0.015
0.050
A2
1.27
2.03
0.050
0.080
b
0.89
1.65
0.035
0.065
b1
0.38
0.51
0.015
0.020
c
0.20
0.30
0.008
0.012
D-8
9.40
11.68
0.370
0.460
E
5.59
7.11
0.220
0.280
E1
7.62
8.26
0.300
0.325
e
2.29
2.79
0.090
0.110
e1
7.37
7.87
0.290
0.310
L
2.79
3.81
0.110
0.150
S-8
1.02
2.03
0.040
0.080
0°
15°
0°
15°
ø
b1
Inches
c
e1
ø
ALD1101A/ALD1101B/ALD1101
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