ADVANCED
LINEAR
DEVICES, INC.
ALD1102A/ALD1102B
ALD1102
DUAL P-CHANNEL MATCHED MOSFET PAIR
GENERAL DESCRIPTION
APPLICATIONS
The ALD1102 is a monolithic dual P-channel matched transistor pair
intended for a broad range of analog applications. These enhancementmode transistors are manufactured with Advanced Linear Devices' enhanced ACMOS silicon gate CMOS process.
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The ALD1102 offers high input impedance and negative current temperature coefficient. The transistor pair is matched for minimum offset voltage
and differential thermal response, and it is designed for switching and
amplifying applications in -2V to -10V systems where low input bias
current, low input capacitance and fast switching speed are desired.
Since these are MOSFET devices, they feature very large (almost infinite)
current gain in a low frequency, or near DC, operating environment. When
used with an ALD1101, a dual CMOS analog switch can be constructed.
In addition, the ALD1102 is intended as a building block for differential
amplifier input stages, transmission gates, and multiplexer applications.
The ALD1102 is suitable for use in precision applications which require
very high current gain, beta, such as current mirrors and current sources.
The high input impedance and the high DC current gain of the Field Effect
Transistors result in extremely low current loss through the control gate.
The DC current gain is limited by the gate input leakage current, which is
specified at 50pA at room temperature. For example, DC beta of the
device at a drain current of 5mA at 25°C is = 5mA/50pA = 100,000,000.
Precision current mirrors
Precision current sources
Analog switches
Choppers
Differential amplifier input stage
Voltage comparator
Data converters
Sample and Hold
Analog inverter
PIN CONFIGURATION
SOURCE 1
1
8
SUBSTRATE
GATE 1
2
7
SOURCE 2
DRAIN 1
3
6
GATE 2
IC
4
5
DRAIN 2
TOP VIEW
SAL, PAL PACKAGES
FEATURES
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* IC pin is internally connected. Do not connect externally.
Low threshold voltage of 0.7V
Low input capacitance
Low Vos grades -- 2mV, 5mV, 10mV
High input impedance -- 1012Ω typical
Low input and output leakage currents
Negative current (IDS) temperature coefficient
Enhancement-mode (normally off)
DC current gain 109
RoHS compliant
BLOCK DIAGRAM
GATE 1 (2)
ORDERING INFORMATION (“L” suffix denotes lead-free (RoHS))
Operating Temperature Range*
0°C to +70°C
0°C to +70°C
8-Pin
SOIC
Package
8-Pin
Plastic Dip
Package
ALD1102ASAL
ALD1102BSAL
ALD1102SAL
ALD1102APAL
ALD1102BPAL
ALD1102PAL
SOURCE 1 (1)
DRAIN 1 (3)
SUBSTRATE (8)
DRAIN 2 (5)
SOURCE 2 (7)
GATE 2 (6)
* Contact factory for high temperature versions.
©2021 Advanced Linear Devices, Inc., Vers. 2.2
www.aldinc.com
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ABSOLUTE MAXIMUM RATINGS
Drain-source voltage, VDS
Gate-source voltage, VGS
Power dissipation
Operating temperature range SAL, PAL packages
Storage temperature range
Lead temperature, 10 seconds
CAUTION: ESD Sensitive Device. Use static control procedures in ESD controlled environment.
-10V
-10V
500mW
0°C to +70°C
-65°C to +150°C
+260°C
OPERATING ELECTRICAL CHARACTERISTICS
TA = 25°C unless otherwise specified
Parameter
Symbol
Gate Threshold
Voltage
VT
Offset Voltage
VGS1 - VGS2
Min
-0.4
-0.7
VOS
IDS(ON)
Transconductance Gfs
-1.2
ALD1102B
Min Typ Max
ALD1102
Min Typ Max
Unit
-0.4
-0.4
V
IDS = -10µA VGS = VDS
mV
IDS = -100µA VGS = VDS
-0.7
2
Gate Threshold
TCVT
Temperature Drift
On Drain Current
ALD1102A
Typ
Max
-1.2
-0.7
5
-1.3
-1.2
10
-1.3
Test
Conditions
-1.3
mV/°C
mA
VGS = VDS = -5V
mmho
VDS = -5V IDS = -10mA
-8
-16
-8
-16
-8
-16
2
4
2
4
2
4
Mismatch
∆Gfs
0.5
0.5
0.5
%
Output
Conductance
GOS
500
500
500
µmho
VDS = -5V IDS = -10mA
Drain Source
ON Resistance
RDS(ON)
180
Ω
VDS = -0.1V VGS = -5V
Drain Source
ON Resistance
Mismatch
∆RDS(ON)
0.5
%
VDS = -0.1V VGS = -5V
Drain Source
Breakdown
Voltage
BVDSS
V
IDS = -10µA VGS = 0V
Off Drain Current
IDS(OFF)
Gate Leakage
Current
Input
Capacitance
270
180
270
180
0.5
-10
270
0.5
-10
-10
0.1
4
4
0.1
4
4
0.1
4
4
nA
µA
VDS = -10V VGS = 0V
TA = 125°C
IGSS
1
100
10
1
100
10
1
100
10
pA
nA
VDS = 0V VGS = -10V
TA = 125°C
CISS
6
10
6
10
6
10
pF
ALD1102A/ALD1102B/ALD1102
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TYPICAL PERFORMANCE CHARACTERISTICS
LOW VOLTAGE OUTPUT
CHARACTERISTICS
OUTPUT CHARACTERISTICS
4
DRAIN SOURCE ON CURRENT
IDS(ON) (mA)
DRAIN SOURCE ON CURRENT
IDS(ON) (mA)
-80
VBS = 0V
TA = +25°C
-60
VGS = -10V
-8V
-40
-6V
-20
-4V
-2V
2
-4V
-2V
0
-2
-4
0
0
-4
-2
-6
-8
-10
+160
+320
DRAIN SOURCE ON VOLTAGE - VDS(ON) (mV)
TRANSFER CHARACTERISTIC
WITH SUBSTRATE BIAS
FORWARD TRANSCONDUCTANCE vs.
DRAIN-SOURCE VOLTAGE
10000
-20
DRAIN SOURCE ON CURRENT
IDS(ON) (µA)
IDS = -5mA
TA = +25°C
5000
2000
1000
TA = +125°C
500
IDS = -1mA
VBS = 0V
f = 1KHz
200
VBS = 0V
2V
4V
6V
8V
10V
-15
-10
-5
VGS = VDS
TA = +25°C
0
100
0
-2
-4
-6
-8
0
-10
-2.4
-3.2
-4.0
DRAIN SOURCE ON VOLTAGE - VDS(ON) (V)
DRAIN SOURCE ON RESISTANCE vs.
GATE-SOURCE VOLTAGE
DRAIN SOURCE OFF CURRENT vs.
AMBIENT TEMPERATURE
10x10-6
10000
VDS = 0.4V
VBS = 0V
TA = +125°C
1000
100
TA = +25°C
10
0
-1.6
-0.8
GATE SOURCE ON VOLTAGE - VGS(ON) (V)
DRAIN SOURCE OFF CURRENT
RDS(OFF) (A)
FORWARD TRANSCONDUCTANCE
(µmho)
0
-160
-320
DRAIN SOURCE ON VOLTAGE - VDS(ON) (V)
DRAIN SOURCE ON RESISTANCE
RDS(ON) (Ω)
VGS = -10V
-8V
-6V
VBS = 0V
TA = 25°C
-2
-4
-6
-8
VDS = -10V
VGS = VBS = 0V
10x10-9
10x10-12
-10
GATE SOURCE ON VOLTAGE - VGS(ON) (V)
ALD1102A/ALD1102B/ALD1102
Advanced Linear Devices
-50
-25
0
+25
+50
+75
+100 +125
AMBIENT TEMPERATURE - TA (°C)
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TYPICAL APPLICATIONS
CURRENT SOURCE MIRROR
V+ = +5V
CURRENT SOURCE WITH GATE CONTROL
ALD1102,
1/2 ALD1107,
or ALD1117
ALD1102,
1/2 ALD1107,
or ALD1117
V+ = +5V
V+ = +5V
Q3
ISET
Q4
Q3
Q4
RSET
ISET
ISOURCE
ISOURCE
RSET
Digital Logic Control
of Current Source
Q1
ISOURCE = ISET
V+ - Vt
=
RSET
4
~
= R
SET
Q2
ALD1101,
1/2 ALD1106,
or ALD1116
ON
Q1
OFF
Q1, Q2: N-Channel MOSFET
Q3, Q4: P-Channel MOSFET
Q1 : N-Channel MOSFET
Q3, Q4: P-Channel MOSFET
CURRENT SOURCE MULTIPLICATION
DIFFERENTIAL AMPLIFIER
V+
ALD1102,
1/2 ALD1107,
or ALD1117
PMOS PAIR
Q3
1/2 ALD1101,
1/4 ALD1106,
or 1/2 ALD1116
V+ = +5V
ISOURCE = ISET x N
ISET
RSET
ISOURCE
Q4
VOUT
VIN+
Q1
Q2
NMOS PAIR
ALD1101,
1/2 ALD1106,
or ALD1116
Q1
Q2
Q3
QN
Current
Source
Q1, Q2: N-Channel MOSFET
Q3, Q4: P-Channel MOSFET
ALD1102A/ALD1102B/ALD1102
QSET
VIN-
QSET, Q1..QN: ALD1101, ALD1106, or ALD1116
N-Channel MOSFET
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TYPICAL APPLICATIONS (cont.)
BASIC CURRENT SOURCES
N-CHANNEL CURRENT SOURCE
P-CHANNEL CURRENT SOURCE
V+ = +5V
V+ = +5V
RSET
ISET
ISOURCE
ALD1102,
1/2 ALD1107,
or ALD1117
8
Q2 8
3
5
6
Q3
Q1
2
7
7
6
3
2
Q4
5
1
ISOURCE = ISET
V+ - Vt
=
RSET
V+ - 1.0
~
= R
SET
4
~
= R
SET
ALD1101,
1/2 ALD1106,
or ALD1116
ISOURCE
ISET
RSET
Q3, Q4: P-Channel MOSFET
Q1, Q2: N-Channel MOSFET
CASCODE CURRENT SOURCES
V+ = +5V
V+ = +5V
ISET
2 x ALD1102
or ALD1107
RSET
ISOURCE
Q4
Q1
Q2
Q3
Q4
Q3
Q1
Q2
ISET
2 x ALD1101
or ALD1106
ISOURCE = ISET =
Q1, Q2, Q3, Q4: N-Channel MOSFET
(ALD1101 or ALD1103)
ALD1102A/ALD1102B/ALD1102
RSET
ISOURCE
3
V+ - 2Vt ~
RSET = RSET
Q1, Q2, Q3, Q4: P-Channel MOSFET
(ALD1102 or ALD1103)
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SOIC-8 PACKAGE DRAWING
8 Pin Plastic SOIC Package
E
Millimeters
Dim
S (45°)
D
A
Min
1.35
Max
1.75
Min
0.053
Max
0.069
A1
0.10
0.25
0.004
0.010
b
0.35
0.45
0.014
0.018
C
0.18
0.25
0.007
0.010
D-8
4.69
5.00
0.185
0.196
E
3.50
4.05
0.140
0.160
1.27 BSC
e
A
A1
e
Inches
0.050 BSC
H
5.70
6.30
0.224
0.248
L
0.60
0.937
0.024
0.037
ø
0°
8°
0°
8°
S
0.25
0.50
0.010
0.020
b
S (45°)
H
L
ALD1102A/ALD1102B/ALD1102
C
ø
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PDIP-8 PACKAGE DRAWING
8 Pin Plastic DIP Package
Millimeters
E
E1
D
S
A2
A1
e
b
A
L
Dim
Min
Max
Min
Max
A
3.81
5.08
0.105
0.200
A1
0.38
1.27
0.015
0.050
A2
1.27
2.03
0.050
0.080
b
0.89
1.65
0.035
0.065
b1
0.38
0.51
0.015
0.020
c
0.20
0.30
0.008
0.012
D-8
9.40
11.68
0.370
0.460
E
5.59
7.11
0.220
0.280
E1
7.62
8.26
0.300
0.325
e
2.29
2.79
0.090
0.110
e1
7.37
7.87
0.290
0.310
L
2.79
3.81
0.110
0.150
S-8
1.02
2.03
0.040
0.080
0°
15°
0°
15°
ø
b1
Inches
c
e1
ø
ALD1102A/ALD1102B/ALD1102
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