ADVANCED
LINEAR
DEVICES, INC.
ALD1106/ALD1116
QUAD/DUAL N-CHANNEL MATCHED PAIR MOSFET ARRAY
GENERAL DESCRIPTION
APPLICATIONS
The ALD1106/ALD1116 are monolithic quad/dual N-channel enhancement mode matched MOSFET transistor arrays intended for a broad
range of precision analog applications. The ALD1106/ALD1116 offer
high input impedance and negative current temperature coefficient. The
transistor pairs are matched for minimum offset voltage and differential
thermal response, and they are designed for precision analog switching
and amplifying applications in +2V to +10V systems where low input bias
current, low input capacitance and fast switching speed are desired.
These MOSFET devices feature very large (almost infinite) current gain
in a low frequency, or near DC, operating environment. The ALD1106/
ALD1116 are building blocks for differential amplifier input stages,
transmission gates, multiplexer applications, current sources and many
precision analog circuits.
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Precision current mirrors
Precision current sources
Voltage choppers
Differential amplifier input stage
Voltage comparator
Data converters
Sample and Hold
Analog signal processing
PIN CONFIGURATION
FEATURES
• Low threshold voltage of 0.7V
• Low input capacitance
• Low Vos -- 2mV typical
• High input impedance -- 1014Ω typical
• Negative current (IDS) temperature coefficient
• Enhancement-mode (normally off)
• DC current gain 109
• Low input and output leakage currents
• RoHS compliant
8-Pin Plastic Dip
Package
ALD1116PAL
14-Pin SOIC
Package
14-Pin Plastic Dip
Package
ALD1106SBL
1
8
DN2
GN1
2
7
GN2
SN1
3
6
SN2
V-
4
5
V+
ALD1106
Operating Temperature Range*
0°C to +70°C
0°C to +70°C
ALD1116SAL
DN1
TOP VIEW
SAL, PAL PACKAGES
ORDERING INFORMATION (“L” suffix denotes lead-free (RoHS))
8-Pin SOIC
Package
ALD1116
DN1
1
14
DN2
GN1
2
13
GN2
SN1
3
12
SN2
V-
4
11
V+
DN4
5
10
DN3
GN4
6
9
GN3
SN4
7
8
SN3
ALD1106PBL
TOP VIEW
SBL, PBL PACKAGES
* Contact factory for high temperature versions.
BLOCK DIAGRAMS
ALD1116
ALD1106
V+ (5)
V+ (11)
DN2 (14)
DN1 (1)
GN1 (2)
~
DN4 (5)
DN3 (10)
GN2 (13) GN3 (9)
SN1 (3)
V- (4)
SN2 (12)
DN1 (1)
GN4 (6)
SN3 (8)
©2021 Advanced Linear Devices, Inc., Vers. 2.2
V- (4)
www.aldinc.com
DN2 (8)
GN2 (7)
GN1 (2)
SN1 (3)
SN4 (7)
~
V- (4)
SN2 (6)
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ABSOLUTE MAXIMUM RATINGS
Drain-source voltage, VDS
Gate-source voltage, VGS
Power dissipation
Operating temperature range SAL, PAL, SBL, PBL packages
Storage temperature range
Lead temperature, 10 seconds
CAUTION: ESD Sensitive Device. Use static control procedures in ESD controlled environment.
10V
10V
500mW
0°C to +70°C
-65°C to +150°C
+260°C
OPERATING ELECTRICAL CHARACTERISTICS
TA = 25°C unless otherwise specified
ALD1106
Parameter
Symbol
Gate Threshold
Voltage
VT
Offset Voltage
VGS1-VGS2
VOS
Gate Threshold
Temperature
Drift 2
On Drain
Current
Transconductance
GIS
Max
Min
Typ
Max
Unit
0.4
0.7
1.0
0.4
0.7
1.0
V
IDS = 1.0µA VGS = VDS
2
10
2
10
mV
IDS = 10µA VGS = VDS
-1.2
-1.2
mV/°C
3.0
4.8
3.0
4.8
mA
1.0
1.8
1.0
1.8
mmho
%
Mismatch
∆Gfs
0.5
0.5
Output
Conductance
GOS
200
200
Drain Source
RDS(ON)
On Resistance
Drain Source
On Resistence
Mismatch
∆DS(ON)
Drain Source
Breakdown
Voltage
BVDSS
Off Drain
Current 1
IDS(OFF)
Gate Leakage
Current
Input
Capacitance 2
Notes:
1
2
Test
Typ
TCVT
IDS(ON)
ALD1116
Min
350
500
350
0.5
µmho
500
0.5
10
10
Conditions
VGS = VDS = 5V
VDS = 5V IDS = 10mA
VDS = 5V IDS = 10mA
Ω
VDS = 0.1V VGS = 5V
%
VDS = 0.1V VGS = 5V
V
IDS = 1.0µA VGS = 0V
10
400
4
10
400
4
pA
nA
VDS = 10V VGS = 0V
TA = 125°C
IGSS
1
100
1
1
100
1
pA
nA
VDS = 0V VGS = 10V
TA = 125°C
CISS
1
3
1
3
pF
Consists of junction leakage currents
Sample tested parameters
ALD1106/ALD1116
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TYPICAL PERFORMANCE CHARACTERISTICS
LOW VOLTAGE OUTPUT
CHARACTERISTICS
OUTPUT CHARACTERISTICS
1000
VBS = 0V
TA = +25°C
DRAIN SOURCE ON CURRENT
IDS(ON) (µA)
DRAIN SOURCE ON CURRENT
IDS(ON) (mA)
20
VGS = 10V
15
8V
10
6V
4V
5
2V
500
4V
2V
0
-500
-1000
0
0
2
6
4
8
10
DRAIN SOURCE ON CURRENT
IDS(ON) (µA)
TA = +125°C
TA = +25°C
2
1
0.5
IDS = 1mA
0.2
2
0
TRANSFER CHARACTERISTIC
WITH SUBSTRATE BIAS
4
6
VGS = VDS
TA = +25°C
VBS = 0V
-2V
15
-4V
-6V
10
-8V
5
-10V
0
8
0
10
1.6
0.8
2.4
3.2
4.0
DRAIN SOURCE ON VOLTAGE - VDS(ON) (V)
GATE SOURCE ON VOLTAGE - VGS(ON) (V)
DRAIN SOURCE ON RESISTANCE vs.
GATE-SOURCE VOLTAGE
DRAIN SOURCE OFF CURRENT vs.
AMBIENT TEMPERATURE
100
1000
DRAIN SOURCE OFF CURRENT
RDS(OFF) (pA)
FORWARD TRANSCONDUCTANCE
(mmho)
IDS = 10mA
5
+160
20
VBS = 0V
f = 1KHz
10
+80
DRAIN SOURCE ON VOLTAGE - VDS(ON) (mV)
FORWARD TRANSCONDUCTANCE vs.
DRAIN-SOURCE VOLTAGE
20
0
-80
-160
DRAIN SOURCE ON VOLTAGE - VDS(ON) (V)
DRAIN SOURCE ON RESISTANCE
RDS(ON) (KΩ)
VGS = 10V
8V
6V
VBS = 0V
TA = 25°C
VDS = 0.2V
VBS = 0V
10
TA = +125°C
1
TA = +25°C
0.1
2
0
4
6
8
VDS = 10V
VGS = VBS = 0V
100
10
10
GATE SOURCE ON VOLTAGE - VGS(ON) (V)
ALD1106/ALD1116
Advanced Linear Devices
1
-50
-25
0
+25
+50
+75
+100 +125
AMBIENT TEMPERATURE - TA (°C)
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TYPICAL APPLICATIONS
CURRENT SOURCE MIRROR
V+ = +5V
CURRENT SOURCE WITH GATE CONTROL
ALD1102,
1/2 ALD1107,
or ALD1117
ALD1102,
1/2 ALD1107,
or ALD1117
V+ = +5V
V+ = +5V
Q3
ISET
Q4
Q3
Q4
RSET
ISET
ISOURCE
ISOURCE
RSET
Digital Logic Control
of Current Source
Q1
ISOURCE = ISET
V+ - Vt
=
RSET
4
~
= R
SET
Q2
ALD1101,
1/2 ALD1106,
or ALD1116
ON
Q1
OFF
Q1, Q2: N-Channel MOSFET
Q3, Q4: P-Channel MOSFET
Q1 : N-Channel MOSFET
Q3, Q4: P-Channel MOSFET
CURRENT SOURCE MULTIPLICATION
DIFFERENTIAL AMPLIFIER
V+
ALD1102,
1/2 ALD1107,
or ALD1117
V+ = +5V
ISOURCE = ISET x N
PMOS PAIR
Q3
1/2 ALD1101,
1/4 ALD1106,
or 1/2 ALD1116
ISET
RSET
ISOURCE
Q4
VOUT
Q1
VIN+
Q2
NMOS PAIR
ALD1101,
1/2 ALD1106,
or ALD1116
QSET
Q2
Q3
QN
Current
Source
QSET, Q1..QN: ALD1101, ALD1106, or ALD1116
N-Channel MOSFET
Q1, Q2: N-Channel MOSFET
Q3, Q4: P-Channel MOSFET
ALD1106/ALD1116
Q1
VIN-
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TYPICAL APPLICATIONS (cont.)
BASIC CURRENT SOURCES
N-CHANNEL CURRENT SOURCE
P-CHANNEL CURRENT SOURCE
V+ = +5V
V+ = +5V
RSET
ISET
ISOURCE
ALD1102,
1/2 ALD1107,
or ALD1117
8
Q2 8
3
5
6
Q1
2
7
7
6
Q3
3
2
Q4
5
1
ISOURCE = ISET
V+ - Vt
=
RSET
V+ - 1.0
~
= R
SET
4
~
= R
SET
ISOURCE
ALD1101,
1/2 ALD1106,
or ALD1116
ISET
RSET
Q3, Q4: P-Channel MOSFET
Q1, Q2: N-Channel MOSFET
CASCODE CURRENT SOURCES
V+ = +5V
V+ = +5V
ISET
RSET
ISOURCE
Q4
Q1
Q2
Q3
Q4
Q3
Q1
Q2
ISET
2 x ALD1101
or ALD1106
RSET
ISOURCE = ISET =
Q1, Q2, Q3, Q4: N-Channel MOSFET
(ALD1101 or ALD1103)
ALD1106/ALD1116
2 x ALD1102
or ALD1107
ISOURCE
3
V+ - 2Vt ~
RSET = RSET
Q1, Q2, Q3, Q4: P-Channel MOSFET
(ALD1102 or ALD1103)
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SOIC-8 PACKAGE DRAWING
8 Pin Plastic SOIC Package
E
Millimeters
Dim
S (45°)
D
A
Min
1.35
Max
1.75
Min
0.053
Max
0.069
A1
0.10
0.25
0.004
0.010
b
0.35
0.45
0.014
0.018
C
0.18
0.25
0.007
0.010
D-8
4.69
5.00
0.185
0.196
E
3.50
4.05
0.140
0.160
1.27 BSC
e
A
A1
e
Inches
0.050 BSC
H
5.70
6.30
0.224
0.248
L
0.60
0.937
0.024
0.037
ø
0°
8°
0°
8°
S
0.25
0.50
0.010
0.020
b
S (45°)
H
L
ALD1106/ALD1116
C
ø
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PDIP-8 PACKAGE DRAWING
8 Pin Plastic DIP Package
Millimeters
E
E1
D
S
A2
A1
e
b
A
L
Dim
Min
Max
Min
Max
A
3.81
5.08
0.105
0.200
A1
0.38
1.27
0.015
0.050
A2
1.27
2.03
0.050
0.080
b
0.89
1.65
0.035
0.065
b1
0.38
0.51
0.015
0.020
c
0.20
0.30
0.008
0.012
D-8
9.40
11.68
0.370
0.460
E
5.59
7.11
0.220
0.280
E1
7.62
8.26
0.300
0.325
e
2.29
2.79
0.090
0.110
e1
7.37
7.87
0.290
0.310
L
2.79
3.81
0.110
0.150
S-8
1.02
2.03
0.040
0.080
0°
15°
0°
15°
ø
b1
Inches
c
e1
ALD1106/ALD1116
ø
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SOIC-14 PACKAGE DRAWING
14 Pin Plastic SOIC Package
Millimeters
E
S (45°)
Dim
Min
A
1.35
Max
1.75
Min
0.053
Max
0.069
A1
0.10
0.25
0.004
0.010
b
0.35
0.45
0.014
0.018
C
0.18
0.25
0.007
0.010
D-14
8.55
8.75
0.336
0.345
E
3.50
4.05
0.140
0.160
1.27 BSC
e
D
A
Inches
0.050 BSC
H
5.70
6.30
0.224
0.248
L
0.60
0.937
0.024
0.037
ø
0°
8°
0°
8°
S
0.25
0.50
0.010
0.020
A1
e
b
S (45°)
H
L
ALD1106/ALD1116
C
ø
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PDIP-14 PACKAGE DRAWING
14 Pin Plastic DIP Package
Millimeters
E
E1
D
S
A2
A1
e
b
b1
A
L
Dim
A
Min
Inches
3.81
Max
5.08
Min
0.105
Max
0.200
A1
0.38
1.27
0.015
0.050
A2
1.27
2.03
0.050
0.080
b
0.89
1.65
0.035
0.065
b1
0.38
0.51
0.015
0.020
c
0.20
0.30
0.008
0.012
D-14
17.27
19.30
0.680
0.760
E
5.59
7.11
0.220
0.280
E1
7.62
8.26
0.300
0.325
e
2.29
2.79
0.090
0.110
e1
7.37
7.87
0.290
0.310
L
2.79
3.81
0.110
0.150
S-14
1.02
2.03
0.040
0.080
ø
0°
15°
0°
15°
c
e1
ALD1106/ALD1116
ø
Advanced Linear Devices
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