ALD1115SAL

ADVANCED LINEAR DEVICES, INC. ALD1115 COMPLEMENTARY N-CHANNEL AND P-CHANNEL MOSFET GENERAL DESCRIPTION APPLICATIONS The ALD1115 is a monolithic complementary N-channel and P-channel transistor pair intended for a broad range of analog applications. These enhancement-mode transistors are manufactured with Advanced Linear Devices' enhanced ACMOS silicon gate CMOS process. It consists of a N-channel MOSFET and a P-channel MOSFET in one package. The ALD1115 is a dual version of the quad complementary ALD1105. • • • • • • • • • • • • • The ALD1115 offers high input impedance and negative current temperature coefficient. The transistor pair is designed for precision signal switching and amplifying applications in +1V to +10V systems where low input bias current, low input capacitance and fast switching speed are desired. Since these are MOSFET devices, they feature very large (almost infinite) current gain in a low frequency, or near DC, operating environment. When connected in parallel with sources, drains and gates connected together, a CMOS analog switch can be constructed. In addition, the ALD1115 is intended as a building block for CMOS inverters, differential amplifier input stages, transmission gates, and multiplexer applications. Precision current mirrors Complementary push-pull linear drives Discrete analog switches Analog signal choppers Differential amplifier input stage Voltage comparator Data converters Sample and Hold Analog current inverter Precision matched current sources CMOS inverter stage Diode clamps Source followers PIN CONFIGURATION The ALD1115 is suitable for use in precision applications which require very high current gain, beta, such as current mirrors and current sources. The high input impedance and the high DC current gain of the Field Effect Transistors result in extremely low current loss through the control gate. The DC current gain is limited by the gate input leakage current, which is specified at 100pA at room temperature. V+ is connected to the substrate, which is the most positive voltage potential of the ALD1115, usually SP (5). Similarly, V- is connected to the most negative voltage potential of the ALD1115, usually SN (1). SN 1 8 V+ GN 2 7 DP DN 3 6 GP V- 4 5 SP TOP VIEW SAL, PAL PACKAGES FEATURES • Thermal tracking between N-channel and P-channel • Low threshold voltage of 0.7V for both N-channel and P-channel MOSFETs • Low input capacitance • High input impedance -- 1013Ω typical • Low input and output leakage currents • Negative current (IDS) temperature coefficient • Enhancement-mode (normally off) • DC current gain 109 • Single N-channel MOSFET and single P-channel MOSFET in one package BLOCK DIAGRAM GN (2) DN (3) SN (1) V- (4) ORDERING INFORMATION (“L” suffix denotes lead-free (RoHS)) Operating Temperature Range* 0°C to +70°C 0°C to +70°C 8-Pin SOIC Package 8-Pin Plastic Dip Package ALD1115SAL ALD1115PAL GP (6) DP (7) SP (5) V+ (8) * Contact factory for high temperature versions. ©2021 Advanced Linear Devices, Inc., Vers. 2.2 www.aldinc.com 1 of 8 ABSOLUTE MAXIMUM RATINGS Drain-source voltage, VDS Gate-source voltage, VGS Power dissipation Operating temperature range SAL, PAL packages Storage temperature range Lead temperature, 10 seconds CAUTION: ESD Sensitive Device. Use static control procedures in ESD controlled environment. 10V 10V 500mW 0°C to +70°C -65°C to +150°C +260°C OPERATING ELECTRICAL CHARACTERISTICS TA = 25°C unless otherwise specified Parameter Symbol Gate Threshold VT Voltage N - Channel Min Typ Max 0.4 Gate Threshold Temperature TCVT Drift 0.7 -1.2 On Drain Current IDS (ON) 3 4.8 Trans-. conductance Gfs 1 1.8 Output Conductance GOS 200 Drain Source RDS(ON) ON Resistance Drain Source Breakdown Voltage BVDSS Off Drain Current IDS(OFF) Gate Leakage Current Input Capacitance ALD1115 1.0 350 Unit Test Conditions V IDS = 1µA VGS = VDS P - Channel Min Typ Max Unit -0.4 V mV/°C mA 500 10 -0.7 -1.2 -1.3 VGS = VDS = 5V -1.3 -2 mmho VDS = 5V IDS = 10mA 0.25 µmho Test Conditions IDS = -1µA VGS = VDS mV/°C mA VGS = VDS = -5V 0.67 mmho VDS = -5V IDS = -10mA VDS = 5V IDS = 10mA 40 µmho VDS = -5V IDS = -10mA Ω VDS = 0.1V VGS = 5V 1200 Ω VDS = -0.1V VGS = -5V V IDS = 1µA VGS = 0V V IDS = -1µA VGS = 0V 10 400 4 pA nA VDS = 10V IGS = 0V TA = 125°C IGSS 1 100 1 pA nA VDS = 0V VGS = 10V TA = 125°C CISS 1 3 pF 1800 -10 Advanced Linear Devices 10 400 4 pA nA VDS = -10V VGS = 0V TA = 125°C 1 100 1 pA nA VDS = 0V VGS = -10V TA = 125°C 1 3 pF 2 of 8 TYPICAL N-CHANNEL PERFORMANCE CHARACTERISTICS LOW VOLTAGE OUTPUT CHARACTERISTICS OUTPUT CHARACTERISTICS 1000 VBS = 0V TA = +25°C DRAIN-SOURCE ON CURRENT IDS(ON) (µA) DRAIN SOURCE ON CURRENT IDS(ON) (mA) 20 VGS = 10V 15 8V 10 6V 4V 5 2V 500 4V 2V 0 -500 -1000 0 0 2 6 4 8 10 TA = +25°C 2 1 0.5 IDS = 1mA 0.2 0 DRAIN SOURCE ON RESISTANCE RDS(ON) (KΩ) DRAIN SOURCE ON CURRENT IDS(ON) (µA) TA = +125°C 2 TRANSFER CHARACTERISTIC WITH SUBSTRATE BIAS 4 6 VGS = VDS TA = +25°C VBS = 0V -2V 15 -4V -6V 10 -8V 5 -10V 0 8 0 10 1.6 0.8 2.4 3.2 DRAIN SOURCE ON VOLTAGE - VDS(ON) (V) GATE SOURCE ON VOLTAGE - VGS(ON) (V) DRAIN SOURCE ON RESISTANCE vs. GATE-SOURCE VOLTAGE DRAIN SOURCE OFF CURRENT vs. AMBIENT TEMPERATURE 100 4.0 1000 DRAIN SOURCE OFF CURRENT RDS(OFF) (pA) FORWARD TRANSCONDUCTANCE (mmho) IDS = 10mA 5 +160 20 VBS = 0V f = 1KHz 10 +80 DRAIN SOURCE ON VOLTAGE - VDS(ON) (mV) FORWARD TRANSCONDUCTANCE vs. DRAIN-SOURCE VOLTAGE 20 0 -80 -160 DRAIN SOURCE ON VOLTAGE - VDS(ON) (V) VDS = 0.2V VBS = 0V 10 TA = +125°C 1 TA = +25°C 0.1 0 2 4 6 8 VDS = 10V VGS = VBS = 0V 100 10 1 10 GATE SOURCE ON VOLTAGE - VGS(ON) (V) ALD1115 VGS = 10V 8V 6V VBS = 0V TA = 25°C Advanced Linear Devices -50 -25 0 +25 +50 +75 +100 +125 AMBIENT TEMPERATURE - TA (°C) 3 of 8 TYPICAL P-CHANNEL PERFORMANCE CHARACTERISTICS OUTPUT CHARACTERISTICS LOW VOLTAGE OUTPUT CHARACTERISTICS 500 DRAIN SOURCE ON CURRENT IDS(ON) (µA) DRAIN SOURCE ON CURRENT IDS(ON) (mA) -10 VBS = 0V TA = +25°C -7.5 VGS = -10V -5.0 -8V -6V -2.5 -4V -2V 250 -4V -2V 0 -250 -500 0 0 -4 -2 -6 -8 -10 +320 TRANSFER CHARACTERISTIC WITH SUBSTRATE BIAS 1.0 -20 DRAIN SOURCE ON CURRENT IDS(ON) (µA) IDS = -5mA TA = +25°C 0.5 0.2 0.1 TA = +125°C 0.05 IDS = -1mA VBS = 0V f = 1KHz 0.02 0.01 VBS = 0V 2V 4V 6V 8V 10V -15 -10 -5 VGS = VDS TA = +25°C 0 0 -2 -4 -6 -8 -10 0 -1.6 -0.8 -2.4 -3.2 -4.0 DRAIN SOURCE ON VOLTAGE - VDS(ON) (V) GATE SOURCE ON VOLTAGE - VGS(ON) (V) DRAIN SOURCE ON RESISTANCE vs. GATE-SOURCE VOLTAGE DRAIN SOURCE OFF CURRENT vs. AMBIENT TEMPERATURE 1000 100 DRAIN SOURCE OFF CURRENT RDS(OFF) (pA) FORWARD TRANSCONDUCTANCE (mmho) +160 DRAIN SOURCE ON VOLTAGE - VDS(ON) (mV) FORWARD TRANSCONDUCTANCE vs. DRAIN-SOURCE VOLTAGE DRAIN SOURCE ON RESISTANCE RDS(ON) (KΩ) 0 -160 -320 DRAIN SOURCE ON VOLTAGE - VDS(ON) (V) VDS = 0.4V VBS = 0V TA = +125°C 10 1 TA = +25°C 0.1 0 -2 -4 -6 -8 VDS = -10V VGS = VBS = 0V 100 10 1 -10 GATE SOURCE ON VOLTAGE - VGS(ON) (V) ALD1115 VGS = -10V -8V -6V VBS = 0V TA = 25°C Advanced Linear Devices -50 -25 0 +25 +50 +75 +100 +125 AMBIENT TEMPERATURE - TA (°C) 4 of 8 TYPICAL APPLICATIONS CURRENT SOURCE MIRROR CURRENT SOURCE WITH GATE CONTROL V+ = +5V V+ = +5V V+ = +5V Q3 ISET Q4 Q3 Q4 RSET ISET ISOURCE Q1 Q2 ISOURCE Digital Logic Control of Current Source ISOURCE = ISET V+ - Vt = RSET 4 ~ = R SET ON Q1 OFF Q1 : N-Channel MOSFET Q3, Q4: P-Channel MOSFET Q1, Q2: N-Channel MOSFET Q3, Q4: P-Channel MOSFET CMOS INVERTER CMOS ANALOG SWITCH V+ IN RSET CONTROL OUT OUT IN V+ CONTROL ALD1115 Advanced Linear Devices 5 of 8 TYPICAL APPLICATIONS (cont.) DIODE-CONNECTED CONFIGURATION SOURCE FOLLOWER V+ V+ V+ R VOUT = V+ - VDS IN VOUT = VDS OUT RA RB R CASCODE CURRENT SOURCES V+ = +5V V+ = +5V ISET RSET ISOURCE Q4 Q2 Q1 Q2 Q3 Q4 Q3 Q1 ISET RSET ISOURCE = ISET = Q1, Q2, Q3, Q4: N-Channel MOSFET ALD1115 ISOURCE 3 V+ - 2Vt ~ RSET = RSET Q1, Q2, Q3, Q4: P-Channel MOSFET Advanced Linear Devices 6 of 8 SOIC-8 PACKAGE DRAWING 8 Pin Plastic SOIC Package E Millimeters Dim S (45°) D A Min 1.35 Max 1.75 Min 0.053 Max 0.069 A1 0.10 0.25 0.004 0.010 b 0.35 0.45 0.014 0.018 C 0.18 0.25 0.007 0.010 D-8 4.69 5.00 0.185 0.196 E 3.50 4.05 0.140 0.160 1.27 BSC e A A1 e Inches 0.050 BSC H 5.70 6.30 0.224 0.248 L 0.60 0.937 0.024 0.037 ø 0° 8° 0° 8° S 0.25 0.50 0.010 0.020 b S (45°) H L ALD1115 C ø Advanced Linear Devices 7 of 8 PDIP-8 PACKAGE DRAWING 8 Pin Plastic DIP Package Millimeters E E1 D S A2 A1 e b A L Dim Min Max Min Max A 3.81 5.08 0.105 0.200 A1 0.38 1.27 0.015 0.050 A2 1.27 2.03 0.050 0.080 b 0.89 1.65 0.035 0.065 b1 0.38 0.51 0.015 0.020 c 0.20 0.30 0.008 0.012 D-8 9.40 11.68 0.370 0.460 E 5.59 7.11 0.220 0.280 E1 7.62 8.26 0.300 0.325 e 2.29 2.79 0.090 0.110 e1 7.37 7.87 0.290 0.310 L 2.79 3.81 0.110 0.150 S-8 1.02 2.03 0.040 0.080 0° 15° 0° 15° ø b1 Inches c e1 ALD1115 ø Advanced Linear Devices 8 of 8