ALD310708APCL

e ADVANCED LINEAR DEVICES, INC. TM EPAD EN ® AB LE D ALD310708A/ALD310708 PRECISION P-CHANNEL EPAD® MOSFET ARRAY VGS(th)= -0.80V QUAD ENHANCED MODE MATCHED PAIR APPLICATIONS GENERAL DESCRIPTION ALD310708A/ALD310708 high precision monolithic quad P-Channel MOSFET arrays are matched at the factory using ALD's proven EPAD® CMOS technology. This device is available in a quad version and is a member of the EPAD ® Matched Pair MOSFET Family. The ALD310708A/ALD310708 is a P-channel version of the popular ALD110808A/ALD110808 Precision Threshold device. Together, these two MOSFET series enable complementary precision N-Channel and PChannel MOSFET array based circuits. Intended for low voltage and low power small signal applications, the ALD310708A/ALD310708 features precision -0.80V Gate Threshold Voltage, which enables circuit designs with very low operating voltages such as 2V power supplies where the circuits operate below the threshold voltage of the ALD310708A/ALD310708. This feature also enhances input/output signal operating ranges, especially in very low operating voltage environments. With these low threshold precision devices, a circuit with multiple cascading stages can be constructed to operate at extremely low supply or bias voltage levels. ALD310708A/ ALD310708 also features high input impedance (2.5 x 1010Ω) and high DC current gain (>108). ALD310708A/ALD310708 MOSFETs are designed for exceptional matching of device electrical characteristics. The Gate Threshold Voltage VGS(th) is set precisely at -0.80V +/-0.02V, featuring a typical offset voltage of only +/-0.001V (1mV). As these devices are on the same monolithic chip, they also exhibit excellent temperature tracking characteristics. They are versatile design components for a broad range of precision analog applications such as basic building blocks for current mirrors, matching circuits, current sources, differential amplifier input stages, transmission gates, and multiplexers. These devices also excel in limited operating voltage applications such as very low level precision voltage-clamps. In addition to matched pair electrical characteristics, each individual MOSFET exhibits individual well controlled manufacturing characteristics, enabling the user to depend on tight design limits from different production batches. (Continued on next page) BLOCK DIAGRAM • • • • • • • • • • • • • • • • 0.5% precision current mirrors and current sources Low Tempco (