e
ADVANCED
LINEAR
DEVICES, INC.
TM
EPAD
EN
®
AB
LE
D
ALD810027/ALD910027
QUAD/DUAL SUPERCAPACITOR AUTO BALANCING (SAB™) MOSFET ARRAY
GENERAL DESCRIPTION
FEATURES & BENEFITS
The ALD810027/ALD910027 are members of the ALD8100xx
(quad) and ALD9100xx (dual) family of Supercapacitor Auto Balancing MOSFETs, or SAB™ MOSFETs. SAB MOSFETs are built
with production proven EPAD® technology and are designed to address voltage and leakage-current balancing of supercapacitors
connected in series. Supercapacitors, also known as ultracapacitors
or supercaps, connected in series can be leakage-current balanced
by using a combination of one or more devices connected across
each supercapacitor stack to prevent over-voltages.
• Simple and economical to use
• Precision factory trimmed
• Automatically regulates and balances leakage currents
• Effective for supercapacitor charge-balancing
• Balances up to 4 supercaps with a single IC package
• Balances 2-cell, 3-cell, 4-cell series-connected supercaps
• Scalable to larger supercap stacks and arrays
• Near zero additional leakage currents
• Zero leakage at 0.3V below rated voltages
• Balances series and/or parallel-connected supercaps
• Leakage currents are exponential function of cell voltages
• Active current ranges from 1000µA
• Always active, always fast response time
• Minimizes leakage currents and power dissipation
The ALD810027 offers a set of unique, precise operating voltage
and current characteristics for each of four SAB MOSFET devices,
as shown in its Operating Electrical Characteristics table. It can be
used to balance up to four supercapacitors connected in series.
The ALD910027 has its own set of unique precision Operating Electrical Characteristics for each of its two SAB MOSFET devices,
suitable for up to two series-connected supercapacitors.
Each SAB MOSFET features a precision gate threshold voltage in
the Vt mode, which is 2.70V when the gate-drain source terminals
(VGS = VDS) are connected together at a drain-source current of
IDS(ON) = 1µA. In this mode, input voltage VIN = VGS = VDS. Different VIN produces an Output Current IOUT = IDS(ON) characteristic and results in an effective variable resistor that varies in value
exponentially with VIN. This VIN, when connected across each
supercapacitor in a series, balances each supercapacitor to within
its voltage and current limits.
APPLICATIONS
• Series-connected supercapacitor cell leakage balancing
• Energy harvesting
• Long term backup battery with supercapacitor outputs
• Zero-power voltage divider at selected voltages
• Matched current mirrors and current sources
• Zero-power mode maximum voltage limiter
• Scaled supercapacitor stacks and arrays
PIN CONFIGURATIONS
When VIN = 2.70V is applied to an ALD810027/ALD910027, its
IOUT is 1µA. For a 100mV increase in VIN, to 2.80V, IOUT increases
by about tenfold. For an additional increase in VIN to 2.92V for the
ALD910027 (2.94V for the ALD810027), IOUT increases one hundredfold, to 100µA. Conversely, for a 100mV decrease in VIN to
2.60V, IOUT decreases to one tenth of its previous value, to 0.1µA.
Another 100mV decrease in input voltage would reduce IOUT to
0.01µA. Hence, when an ALD810027/ALD910027 SAB MOSFET
is connected across a supercapacitor that charges to less than
2.50V, it would dissipate essentially no power.
(Continued on next page)
ALD810027
IC*
1
DN1 2
M1
M2
GN1 3
SN1 4
V-
V-
V-
5
DN4 6
M4
M3
16
IC*
15
DN2
14
GN2
13
SN2
12
V+
11
DN3
10
GN3
9
SN3
PRODUCT FAMILY SPECIFICATIONS
For more information on supercapacitor balancing, how SAB
MOSFETs achieve automatic supercapacitor balancing, the device
characteristics of the SAB MOSFET family, product family product
selection guide, applications, configurations, and package information, please download from www.aldinc.com the document:
GN4 7
SN4 8
V-
SCL PACKAGE
“ALD8100xx/ALD9100xx Family of Supercapacitor Auto Balancing (SAB™) MOSFET ARRAYs”
ALD910027
IC*
ORDERING INFORMATION (“L” suffix denotes lead-free (RoHS))
Operating Temperature Range
Package
16-Pin SOIC
8-Pin SOIC
0°C to +70°C
(Commercial)
ALD810027SCL
ALD910027SAL
-40°C to +85°C
(Industrial)
V-
1
V-
8 V+
GN1 2
7 GN2
DN1
6 DN2
3
SN1 4
5 SN2, V-
ALD810027SCLI
SAL PACKAGE
ALD910027SALI
*IC pins are internally connected, connect to V-
©2014 Advanced Linear Devices, Inc., Vers. 2.0
www.aldinc.com
1 of 6
GENERAL DESCRIPTION (CONT.)
APPLYING THE ALD810027/ALD910027:
The voltage dependent characteristic of the ALD810027/
ALD910027 on-resistance is effective in controlling excessive voltage rise across a supercapacitor when connected across it. In series-connected supercapacitor stacks, when one supercapacitor
voltage rises, the voltage of the other supercapacitors drops, with
the ones that have the highest leakage currents having the lowest
supercapacitor voltages. The SAB MOSFETs connected across
these supercapacitors would exhibit complementary opposing current levels, resulting in little additional leakage currents other than
those caused by the supercapacitors themselves.
1) Select a maximum supercapacitor leakage current limit for any
supercapacitor used in the stack. This is the same as output current, IOUT = IDS(ON), of the ALD810027/ALD910027. Test that each
supercapacitor leakage current meets this maximum current limit
before use in the stack.
For technical assistance, please contact ALD technical support at
techsupport@aldinc.com.
2) Determine whether the input voltage VIN (VGS = VDS) at that
IOUT is acceptable for the intended application. This voltage is the
same voltage as the maximum desired operating voltage of the
supercapacitor. For example, with the ALD810027, IOUT = 1µA
corresponds to VIN = 2.70V.
3) Determine that the operating voltage margin, due to various
tolerances and/or temperature effects, is adequate for the intended
operating environment of the supercapacitor.
SCHEMATIC DIAGRAM OF A TYPICAL
CONNECTION FOR A FOUR-SUPERCAP STACK
ALD8100XX
2, 12
3
V+ ≤ +15.0V
IDS(ON) ≤ 80mA
+
M1
4
SCHEMATIC DIAGRAM OF A TYPICAL
CONNECTION FOR A TWO-SUPERCAP STACK
C1
15
14
M2
13
11
10
7
+
M4
2
V2
+
IDS(ON) ≤ 80mA
+
C1
M1
4
C3
7
V3
+
V+ ≤ +15.0V
C2
3, 8
M3
9
6
ALD9100XX
V1
6
M2
V1
+
C2
C4
1, 5
1, 5, 8, 16
1-16 DENOTES PACKAGE PIN NUMBERS
C1-C4 DENOTES SUPERCAPACITORS
ALD810027/ALD910027
1-8 DENOTES PACKAGE PIN NUMBERS
C1-C2 DENOTES SUPERCAPACITORS
Advanced Linear Devices, Inc.
2 of 6
ABSOLUTE MAXIMUM RATINGS
V+ to V- voltage
15.0V
Drain-Source voltage, VDS
10.6V
Gate-Source voltage, VGS
10.6V
Operating Current
80mA
Power dissipation
500mW
Operating temperature range SCL
0°C to +70°C
Operating temperature range SCLI
-40°C to +85°C
Storage temperature range
-65°C to +150°C
Lead temperature, 10 seconds
+260°C
CAUTION: ESD Sensitive Device. Use static control procedures in ESD controlled environment.
OPERATING ELECTRICAL CHARACTERISTICS
V+ = +5V, V- = GND, TA = 25°C, VIN = VGS =VDS, IOUT = IDS(ON) unless otherwise specified
ALD810027
Parameter
Symbol
Min
Typ
Max
Unit
Test Conditions
Gate Threshold Voltage
Vt
2.68
2.70
2.72
V
VGS = VDS; IDS(ON) = 1µA
Offset Voltage
VOS
5
20
mV
Vt1 - Vt2 or Vt3 - Vt4
Offset Voltage Tempco
TCVOS
5
µV/C
Vt1 - Vt2 or Vt3 - Vt4
Gate Threshold Voltage Tempco
TCVt
-2.2
mV/C
VGS = VDS; IDS(ON) = 1µA
Output Current
Drain Source On Resistance
IOUT
RDS(ON)
0.0001
23000
µA
MΩ
VIN = 2.30V
Output Current
Drain Source On Resistance
IOUT
RDS(ON)
0.001
2400
µA
MΩ
VIN = 2.40V
Output Current
Drain Source On Resistance
IOUT
RDS(ON)
0.01
250
µA
MΩ
VIN = 2.50V
Output Current
Drain Source On Resistance
IOUT
RDS(ON)
0.1
26
µA
MΩ
VIN = 2.60V
Output Current
Drain Source On Resistance
IOUT
RDS(ON)
1
2.7
µA
MΩ
VIN = 2.70V
Output Current
Drain Source On Resistance
IOUT
RDS(ON)
10
0.28
µA
MΩ
VIN = 2.80V
Output Current
Drain Source On Resistance
IOUT
RDS(ON)
100
0.029
µA
MΩ
VIN = 2.94V
Output Current
Drain Source On Resistance
IOUT
RDS(ON)
300
0.01
µA
MΩ
VIN = 3.04V
Output Current
Drain Source On Resistance
IOUT
RDS(ON)
1000
0.003
µA
MΩ
VIN = 3.22V
Output Current
Drain Source On Resistance
IOUT
RDS(ON)
3000
0.001
µA
MΩ
VIN = 3.52V
Output Current
Drain Source On Resistance
IOUT
RDS(ON)
10000
0.0004
µA
MΩ
VIN = 4.12V
Drain Source Breakdown Voltage
BVDSX
Drain Source Leakage Current1
IDS(OFF)
Gate Leakage Current1
IGSS
10.6
V
10
5
400
pA
4
nA
200
pA
1
nA
VGS = 5.0V, VDS = 0V
VGS = 5.0V, VDS = 0V,
TA = +125°C
VGS = 0V, VDS = 5.0V
Input Capacitance
CISS
15
pF
Turn-on Delay Time
ton
10
ns
Turn-off Delay Time
toff
10
ns
60
dB
Crosstalk
ALD810027/ALD910027
Advanced Linear Devices, Inc.
VIN = VGS = VDS = Vt - 1.0
VIN = VGS = VDS = Vt - 1.0,
TA = +125°C
f = 100KHz
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ABSOLUTE MAXIMUM RATINGS
V+ to V- voltage
15.0V
Drain-Source voltage, VDS
10.6V
Gate-Source voltage, VGS
10.6V
Operating Current
80mA
Power dissipation
500mW
Operating temperature range SAL
0°C to +70°C
Operating temperature range SALI
-40°C to +85°C
Storage temperature range
-65°C to +150°C
Lead temperature, 10 seconds
+260°C
CAUTION: ESD Sensitive Device. Use static control procedures in ESD controlled environment.
OPERATING ELECTRICAL CHARACTERISTICS
V+ = +5V, V- = GND, TA = 25°C, VIN = VGS =VDS, IOUT = IDS(ON) unless otherwise specified
ALD910027
Parameter
Symbol
Min
Typ
Max
Unit
Test Conditions
Gate Threshold Voltage
Vt
2.68
2.70
2.72
V
VGS = VDS; IDS(ON) = 1µA
Offset Voltage
VOS
5
20
mV
Vt1 - Vt2
Offset Voltage Tempco
TCVOS
5
µV/C
Vt1 - Vt2
Gate Threshold Voltage Tempco
TCVt
-2.2
mV/C
VGS = VDS; IDS(ON) = 1µA
Output Current
Drain Source On Resistance
IOUT
RDS(ON)
0.0001
23000
µA
MΩ
VIN = 2.30V
Output Current
Drain Source On Resistance
IOUT
RDS(ON)
0.001
2400
µA
MΩ
VIN = 2.40V
Output Current
Drain Source On Resistance
IOUT
RDS(ON)
0.01
250
µA
MΩ
VIN = 2.50V
Output Current
Drain Source On Resistance
IOUT
RDS(ON)
0.1
26
µA
MΩ
VIN = 2.60V
Output Current
Drain Source On Resistance
IOUT
RDS(ON)
1
2.7
µA
MΩ
VIN = 2.70V
Output Current
Drain Source On Resistance
IOUT
RDS(ON)
10
0.28
µA
MΩ
VIN = 2.80V
Output Current
Drain Source On Resistance
IOUT
RDS(ON)
100
0.029
µA
MΩ
VIN = 2.92V
Output Current
Drain Source On Resistance
IOUT
RDS(ON)
300
0.01
µA
MΩ
VIN = 3.00V
Output Current
Drain Source On Resistance
IOUT
RDS(ON)
1000
0.003
µA
MΩ
VIN = 3.14V
Output Current
Drain Source On Resistance
IOUT
RDS(ON)
3000
0.001
µA
MΩ
VIN = 3.20V
Output Current
Drain Source On Resistance
IOUT
RDS(ON)
10000
0.0004
µA
MΩ
VIN = 3.70V
Drain Source Breakdown Voltage
BVDSX
Drain Source Leakage Current1
IDS(OFF)
Gate Leakage
Current1
IGSS
10.6
V
10
5
400
pA
4
nA
200
pA
1
nA
VGS = 5.0V, VDS = 0V
VGS = 5.0V, VDS = 0V,
TA = +125°C
VGS = 0V, VDS = 5.0V
Input Capacitance
CISS
30
pF
Turn-on Delay Time
ton
10
ns
Turn-off Delay Time
toff
10
ns
60
dB
Crosstalk
ALD810027/ALD910027
Advanced Linear Devices, Inc.
VIN = VGS = VDS = Vt - 1.0
VIN = VGS = VDS = Vt - 1.0,
TA = +125°C
f = 100KHz
4 of 6
SOIC-16 PACKAGE DRAWING
16 Pin Plastic SOIC Package
E
Millimeters
Dim
S (45°)
D
A
Min
1.35
Max
1.75
Min
0.053
Max
0.069
A1
0.10
0.25
0.004
0.010
b
0.35
0.45
0.014
0.018
C
0.18
0.25
0.007
0.010
D-16
9.80
10.00
0.385
0.394
E
3.50
4.05
0.140
0.160
1.27 BSC
e
e
Inches
0.050 BSC
H
5.70
6.30
0.224
0.248
L
0.60
0.937
0.024
0.037
A
ø
0°
8°
0°
8°
A1
S
0.25
0.50
0.010
0.020
b
S (45°)
H
L
ALD810027/ALD910027
C
ø
Advanced Linear Devices, Inc.
5 of 6
SOIC-8 PACKAGE DRAWING
8 Pin Plastic SOIC Package
E
Millimeters
Dim
S (45°)
D
A
Min
1.35
Max
1.75
Min
0.053
Max
0.069
A1
0.10
0.25
0.004
0.010
b
0.35
0.45
0.014
0.018
C
0.18
0.25
0.007
0.010
D-8
4.69
5.00
0.185
0.196
E
3.50
4.05
0.140
0.160
1.27 BSC
e
A
A1
e
b
Inches
0.050 BSC
H
5.70
6.30
0.224
0.248
L
0.60
0.937
0.024
0.037
ø
0°
8°
0°
8°
S
0.25
0.50
0.010
0.020
S (45°)
H
L
ALD810027/ALD910027
C
ø
Advanced Linear Devices, Inc.
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