A1391, A1392, A1393, and A1395
Micropower 3 V Linear Hall-Effect Sensor ICs
with Tri-State Output and User-Selectable Sleep Mode
FEATURES AND BENEFITS
DESCRIPTION
▪
▪
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▪
The A139x family of linear Hall-effect sensor integrated circuits
(ICs) provide a voltage output that is directly proportional to an
applied magnetic field. Before amplification, the sensitivity of
typical Hall-effect ICs (measured in mV/G) is directly proportional
to the current flowing through the Hall-effect transducer element
inside the ICs. In many applications, it is difficult to achieve
sufficient sensitivity levels with a Hall-effect sensor IC without
consuming more than 3 mA of current. The A139x minimize
current consumption to less than 25 µA through the addition of
a user-selectable sleep mode. This makes these devices perfect
for battery-operated applications such as: cellular phones, digital
cameras, and portable tools. End users can control the current
consumption of the A139x by applying a logic level signal to
the SLEEP pin. The outputs of the devices are not valid (highimpedance mode) during sleep mode. The high-impedance output
feature allows the connection of multiple A139x Hall-effect
devices to a single A-to-D converter input.
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High-impedance output during sleep mode
Compatible with 2.5 to 3.5 V power supplies
10 mW power consumption in the active mode
Miniature MLP/DFN package
Ratiometric output scales with the ratiometric supply
reference voltage (VREF pin)
Temperature-stable quiescent output voltage and
sensitivity
Wide ambient temperature range: –20°C to 85°C
ESD protection greater than 3 kV
Solid-state reliability
Preset sensitivity and offset at final test
PACKAGE: 6-pin MLP/DFN (suffix EH)
The quiescent output voltage of these devices is 50% nominal
of the ratiometric supply reference voltage applied to the
VREF pin of the device. The output voltage of the device is
not ratiometric with respect to the SUPPLY pin.
Approximate footprint
Continued on the next page…
Functional Block Diagram
VCC
VREF
To all subcircuits
RRatio / 2
Hall Element
Regulator
Amp
Filter
Dynamic Offset
Cancellation
RRatio / 2
Out
Gain
OUT
Offset
Programming Logic
SLEEP
Circuit Reference Current
GND
1391-DS, Rev. 10
MCO-0000591
December 3, 2021
Micropower 3 V Linear Hall-Effect Sensor ICs
A1391, A1392,
A1393, and A1395
with Tri-State Output and User-Selectable Sleep Mode
Description (continued)
Despite the low power consumption of the circuitry in the A139x,
the features required to produce a highly accurate linear Hall-effect
IC have not been compromised. Each BiCMOS monolithic circuit
integrates a Hall element, improved temperature-compensating
circuitry to reduce the intrinsic sensitivity drift of the Hall element,
a small-signal high-gain amplifier, and proprietary dynamic offset
cancellation circuits. End of line, post-packaging, factory programming
allows precise control of device sensitivity and offset.
These devices are available in a small 2.0 × 3.0 mm, 0.75 mm nominal
height micro-leaded package (MLP/DFN). It is Pb (lead) free, with
100% matte tin leadframe plating.
SELECTION GUIDE
Part Number
Sensitivity
(mV / G, Typ.)
Package
Packing [1]
A1391SEHLT-T [2]
1.25
DFN/MLP 2 × 3 mm; 0.75 mm nominal height
7-inch reel, 3000 pieces/reel
A1392SEHLT-T [2]
2.50
DFN/MLP 2 × 3 mm; 0.75 mm nominal height
7-inch reel, 3000 pieces/reel
A1393SEHLT-T [2]
5
DFN/MLP 2 × 3 mm; 0.75 mm nominal height
7-inch reel, 3000 pieces/reel
A1395SEHLT-T [2]
10
DFN/MLP 2 × 3 mm; 0.75 mm nominal height
7-inch reel, 3000 pieces/reel
[1] Contact Allegro™
[2] Allegro
for additional packing options.
products sold in DFN package types are not intended for automotive applications.
ABSOLUTE MAXIMUM RATINGS [3]
Rating
Unit
Supply Voltage
Characteristic
Symbol
VCC
8
V
Reverse-Supply Voltage
VRCC
–0.1
V
Ratiometric Supply Reference Voltage
VREF
7
V
–0.1
V
32
V
Reverse-Ratiometric Supply Reference Voltage
VRREF
Logic Supply Voltage
VSLEEP
Reverse-Logic Supply Voltage
Notes
(VCC > 2.5 V)
VRSLEEP
–0.1
V
Output Voltage
VOUT
VCC + 0.1
V
Reverse-Output Voltage
VROUT
Operating Ambient Temperature
TA
Range S
–0.1
V
–20 to 85
°C
Junction Temperature
TJ(MAX)
165
°C
StorageTemperature
Tstg
–65 to 170
°C
*All ratings with reference to ground
Pinout Diagram
VCC
1
6
VREF
OUT
2
5
SLEEP
GND
3
4
GND
Terminal List Table
Pin
Name
1
VCC
Supply
Function
2
OUT
Output
3
GND
Ground
4
GND
Ground
5
¯S
¯ ¯L¯ ¯E¯ ¯E
¯ ¯P
¯
Toggle sleep mode
6
VREF
Supply for ratiometric reference
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2
Micropower 3 V Linear Hall-Effect Sensor ICs
A1391, A1392,
A1393, and A1395
with Tri-State Output and User-Selectable Sleep Mode
ELECTRICAL CHARACTERISTICS: Valid through full operating ambient temperature range, unless otherwise noted
Characteristic
Symbol
Test Conditions
Min.
Typ. [1]
Max.
Units
Supply Voltage
VCC
2.5
–
3.5
V
Nominal Supply Voltage
VCCN
–
3.0
–
V
Supply Zener Clamp Voltage
VCCZ
Ratiometric Reference Voltage [2]
VREF
Ratiometric Reference Zener
Clamp Voltage
VREFZ
ICC = 7 mA, TA = 25°C
IVREF = 3 mA, TA = 25°C
SLEEP Input Voltage
SLEEP Input Threshold
Ratiometric Reference Input
Resistance
Chopper Stabilization Chopping Frequency
SLEEP Input Current
Supply Current [3]
Quiescent Output Power Supply Rejection [4]
VINH
For active mode
VINL
For sleep mode
RREF
fC
ISLEEP
ICC
PSRVOQ
6
8.3
–
V
2.5
–
VCC
V
6
8.3
–
V
–0.1
–
VCC + 0.5
V
–
0.45 × VCC
–
V
–
0.20 × VCC
–
V
VSLEEP > VINH, VCC = VCCN, TA = 25°C
250
–
–
kΩ
VSLEEP < VINL, VCC = VCCN, TA = 25°C
–
5
–
MΩ
VCC = VCCN, TA = 25°C
–
200
–
kHz
VSLEEP = 3 V, VCC = VCCN
–
1
–
μA
VSLEEP < VINL, VCC = VCCN, TA = 25°C
–
0.025
–
mA
VSLEEP > VINH , VCC = VCCN, TA = 25°C
–
3.2
–
mA
fAC < 1 kHz
–
–60
–
dB
[1] Typical
data are for initial design estimations only, and assume optimum manufacturing and application conditions, such as TA = 25°C. Performance
may vary for individual units, within the specified maximum and minimum limits.
[2] Voltage applied to the VREF pin. Note that the V
REF voltage must be less than or equal to VCC. Degradation in device accuracy will occur with
applied voltages of less than 2.5 V.
[3] If the VREF pin is tied to the VCC pin, the supply current would be I
CC + VREF / RREF
[4] f
AC is any AC component frequency that exists on the supply line.
Allegro MicroSystems
955 Perimeter Road
Manchester, NH 03103-3353 U.S.A.
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3
Micropower 3 V Linear Hall-Effect Sensor ICs
A1391, A1392,
A1393, and A1395
with Tri-State Output and User-Selectable Sleep Mode
OUTPUT CHARACTERISTICS: Valid through full operating ambient temperature range, unless otherwise noted
Characteristic
Linear Output Voltage Range
Maximum Voltage Applied to
Output
Symbol
Test Conditions
Min.
Typ. [1]
Max.
Units
VOUTH
VCC = VCCN, VREF ≤ VCC
–
VREF – 0.1
–
V
VOUTL
VCC = VCCN, VREF ≤ VCC
–
0.1
–
V
VSLEEP < VINL
–
–
VCC + 0.1
V
A1391
TA = 25°C, VCC = VREF = VCCN
–
1.25
–
mV/G
A1392
TA = 25°C, VCC = VREF = VCCN
–
2.50
–
mV/G
A1393
TA = 25°C, VCC = VREF = VCCN
–
5
–
mV/G
A1395
TA = 25°C, VCC = VREF = VCCN
VOUTMAX
Sensitivity [2]
Sens
Quiescent Output
VOUTQ
Output Resistance [3]
ROUT
–
10
–
mV/G
TA = 25°C, B = 0 G
–
0.500 × VREF
–
V
fout = 1 kHz, VSLEEP > VINH , active mode
–
20
–
Ω
fout = 1 kHz, VSLEEP < VINL, sleep mode
–
4M
–
Ω
Output Load Resistance
RL
Output to ground
15
–
–
kΩ
Output Load Capacitance
CL
Output to ground
–
–
10
nF
Output Bandwidth
BW
–3 dB point, VOUT = 1 Vpp sinusoidal, VCC = VCCN
1391
Noise [4][5]
Vn
1392
1393
1395
–
10
–
kHz
Cbypass = 0.1 µF, BWexternalLPF = 2 kHz
–
6
12
mVpp
Cbypass = 0.1 µF, no load
–
–
20
mVpp
Cbypass = 0.1 µF, no load
–
–
40
mVpp
Cbypass = 0.1 µF, BWexternalLPF = 2 kHz
–
12
24
mVpp
Cbypass = 0.1 µF, no load
–
–
40
mVpp
Cbypass = 0.1 µF, no load
–
–
80
mVpp
[1] Typical
data are for initial design estimations only, and assume optimum manufacturing and application conditions, such as TA = 25°C. Performance
may vary for individual units, within the specified maximum and minimum limits.
[2] For V
REF values other than VREF = VCCN , the sensitivity can be derived from the following equation: K × VREF , where K = 0.416 for the A1391, K =
0.823 for the A1392, K = 1.664 for the A1393, and K = 3.328 for the A1395.
[3] f
OUT is the output signal frequency.
[4] Noise specification includes digital and analog noise.
[5] Values for BW
externalLPF do not include any noise resulting from noise on the externally supplied VREF voltage.
Allegro MicroSystems
955 Perimeter Road
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4
Micropower 3 V Linear Hall-Effect Sensor ICs
A1391, A1392,
A1393, and A1395
with Tri-State Output and User-Selectable Sleep Mode
OUTPUT TIMING CHARACTERISTICS [1]: TA = 25°C
Characteristic
Time [3]
Power-On
Power-Off Time [4]
Symbol
Test Conditions
Min.
Typ. [2]
Max.
Units
tPON
–
40
60
µs
tPOFF
–
1
–
µs
[1] See
figure 1 for explicit timing delays.
data are for initial design estimations only, and assume optimum manufacturing and application conditions, such as TA = 25°C. Performance
may vary for individual units, within the specified maximum and minimum limits.
[3] Power-On Time is the elapsed time after the voltage on the SLEEP pin exceeds the active mode threshold voltage,V
INH, until the time the device
output reaches 90% of its value.
[4] Power-Off Time is the duration of time between when the signal on the SLEEP pin switches from HIGH to LOW and when I
CC drops to under
100 μA. During this time period, the output goes into the HIGH impedance state.
[2] Typical
MAGNETIC CHARACTERISTICS: TA = 25°C
Characteristic
Max.
Units
Ratiometry
ΔVOUTQ(ΔV)
–
100
–
%
Ratiometry
ΔSens(ΔV)
–
100
–
%
Lin+
–
100
–
%
Negative Linearity
Lin–
–
100
–
%
Symmetry
Sym
–
100
–
%
Positive Linearity
Symbol
Test Conditions
Min.
Typ. [1]
[1] Typical
data are for initial design estimations only, and assume optimum manufacturing and application conditions, such as TA = 25°C. Performance
may vary for individual units, within the specified maximum and minimum limits.
Allegro MicroSystems
955 Perimeter Road
Manchester, NH 03103-3353 U.S.A.
www.allegromicro.com
5
Micropower 3 V Linear Hall-Effect Sensor ICs
A1391, A1392,
A1393, and A1395
with Tri-State Output and User-Selectable Sleep Mode
ELECTRICAL CHARACTERISTIC DATA
Supply Current versus Ambient Temperature
A139x, VCC = VREF = 3 V
3.5
ICC (mA)
3.0
2.5
2.0
Active Mode
Sleep Mode
1.5
1.0
0.5
0
-20
-5
10
25
40
55
70
85
TA (°C)
Ratiometric Reference Input Current
versus Ambient Temperature
SLEEP Input Current
versus Ambient Temperature
A139x, VCC = VREF= VSLEEP = 3 V
19
17
13
ISLEEP (µA)
IREF (µA)
15
11
9
7
5
3
1
-20
-5
10
25
40
TA (°C)
55
70
85
A139x, VCC = VREF= VSLEEP = 3 V
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
-20
-5
10
25
40
55
70
85
TA (°C)
Allegro MicroSystems
955 Perimeter Road
Manchester, NH 03103-3353 U.S.A.
www.allegromicro.com
6
Micropower 3 V Linear Hall-Effect Sensor ICs
A1391, A1392,
A1393, and A1395
with Tri-State Output and User-Selectable Sleep Mode
MAGNETIC CHARACTERISTIC DATA
Average Ratiometry, VOUTQ , versus Ambient Temperature
(A139x)
Average Ratiometry, Voq (%)
101.0
100.8
2.5 to 3 V
3.5 to 3 V
100.6
100.4
100.2
100.0
99.8
99.6
99.4
99.2
99.0
-20
10
25
40
TA (°C)
55
70
85
Average Ratiometry, Sens, versus Ambient Temperature
(A1392)
Average Ratiometry, Sens, versus Ambient Temperature
(A1391)
102.0
102.0
101.5
101.0
Average Ratiometry, Sens (%)
Average Ratiometry, Sens (%)
-5
2.5 to 3 V
3.5 to 3 V
100.5
100.0
99.5
99.0
98.5
98.0
97.5
-20
-5
10
25
40
TA (°C)
55
70
101.5
101.0
100.5
2.5 to 3 V
3.5 to 3 V
100.0
99.5
99.0
98.5
98.0
97.5
85
-20
-5
Average Symmetry, Vcc=Vref=Vsleep=3V
(A139x)
40
TA (°C)
55
70
85
70
85
101.5
Average Linearity (%)
101.5
Average Symetry (%)
25
Average Linearity
(A139x)
102.0
102.0
10
101.0
100.5
100.0
99.5
99.0
98.5
101.0
100.5
100.0
99.5
99.0
Linearity - , Vcc=3.5V
Linearity +, Vcc=3.5V
Linearity +, Vcc=2.5V
Linearity -, Vcc = 2.5V
98.5
98.0
97.5
98.0
97.0
97.5
-20
-5
10
25
40
TA (°C)
55
70
85
-20
-5
10
25
40
55
TA (°C)
Allegro MicroSystems
955 Perimeter Road
Manchester, NH 03103-3353 U.S.A.
www.allegromicro.com
7
Micropower 3 V Linear Hall-Effect Sensor ICs
A1391, A1392,
A1393, and A1395
with Tri-State Output and User-Selectable Sleep Mode
THERMAL CHARACTERISTICS: May require derating at maximum conditions; see application information
Characteristic
Symbol
RθJA
Package Thermal Resistance
Test Conditions
Min.
Units
1-layer PCB with copper limited to solder pads
221
°C/W
2-layer PCB with 0.6 in.2 of copper area each side, connected by thermal vias
70
°C/W
4-layer PCB based on JEDEC standard
50
°C/W
Power Dissipation versus Ambient Temperature
4500
4000
Power Dissipation, PD (m W)
3500
4-layer PCB
(RθJA = 50 ºC/W)
3000
2-layer PCB
(RθJA = 70 ºC/W)
2500
2000
1-layer PCB
(RθJA = 221 ºC/W)
1500
1000
500
0
20
40
60
80
100
120
Temperature (°C)
140
160
180
Allegro MicroSystems
955 Perimeter Road
Manchester, NH 03103-3353 U.S.A.
www.allegromicro.com
8
Micropower 3 V Linear Hall-Effect Sensor ICs
A1391, A1392,
A1393, and A1395
with Tri-State Output and User-Selectable Sleep Mode
CHARACTERISTICS DEFINITIONS
Ratiometric. The A139x devices feature ratiometric output.
The quiescent voltage output and sensitivity are proportional to
the ratiometric supply reference voltage.
The percent ratiometric change in the quiescent voltage output is
defined as:
∆VOUTQ(∆V) =
∆VOUTQ(VREF)÷ ∆VOUTQ(3V)
VREF ÷ 3 V
× 100 %
(1)
Linearity and Symmetry. The on-chip output stage is
designed to provide a linear output with maximum supply voltage
of VCCN. Although application of very high magnetic fields will
not damage these devices, it will force the output into a non-linear region. Linearity in percent is measured and defined as
Lin+ =
and the percent ratiometric change in sensitivity is defined as:
∆Sens(∆V) =
∆Sens(VREF)÷ ∆Sens(3V)
VREF ÷ 3 V
× 100%
(2)
Lin– =
VOUT(+B) – VOUTQ
2(VOUT(+B / 2) – VOUTQ )
VOUT(–B) – VOUTQ
2(VOUT(–B / 2) – VOUTQ )
× 100 %
(3)
× 100 %
(4)
× 100 %
(5)
and output symmetry as
Sym =
VOUT(+B) – VOUTQ
VOUTQ – VOUT(–B)
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955 Perimeter Road
Manchester, NH 03103-3353 U.S.A.
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9
Micropower 3 V Linear Hall-Effect Sensor ICs
A1391, A1392,
A1393, and A1395
with Tri-State Output and User-Selectable Sleep Mode
DEVICE LOW-POWER FUNCTIONALITY
A139x are low-power Hall-effect sensor ICs that are perfect for
power sensitive customer applications. The current consumption
of these devices is typically 3.2 mA, while the device is in the
active mode, and less than 25 µA when the device is in the sleep
mode. Toggling the logic level signal connected to the SLEEP pin
drives the device into either the active mode or the sleep mode.
A logic low sleep signal drives the device into the sleep mode,
while a logic high sleep signal drives the device into the active
mode.
In the case in which the VREF pin is powered before the VCC
pin, the device will not operate within the specified limits until
the supply voltage is equal to the reference voltage. When the
device is switched from the sleep mode to the active mode, a time
defined by tPON must elapse before the output of the device is
valid. The device output transitions into the high impedance state
approximately tPOFF seconds after a logic low signal is applied to
the SLEEP pin (see figure 1).
If possible, it is recommended to power-up the device in the
sleep mode. However, if the application requires that the device
be powered on in the active mode, then a 10 kΩ resistor in series
with the SLEEP pin is recommended. This resistor will limit the
current that flows into the SLEEP pin if certain semiconductor
junctions become forward biased before the ramp up of the voltage on the VCC pin. Note that this current limiting resistor is not
required if the user connects the SLEEP pin directly to the VCC
pin. The same precautions are advised if the device supply is
powered-off while power is still applied to the SLEEP pin.
VCC
VSLEEP
ICC
+B
B field 0
–B
VOUT
HIGH
IMPEDANCE
HIGH
IMPEDANCE
HIGH
IMPEDANCE
tPON
tPOFF
tPON
tPOFF
Figure 1. A139x Timing Diagram
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955 Perimeter Road
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10
Micropower 3 V Linear Hall-Effect Sensor ICs
A1391, A1392,
A1393, and A1395
with Tri-State Output and User-Selectable Sleep Mode
DEVICE SUPPLY RATIOMETRY APPLICATION CIRCUIT
Figures 2 and 3 present applications where the VCC pin is connected together with the VREF pin of the A139x. Both pins are
connected to the battery, Vbat2. In this case, the device output will
be ratiometric with respect to the battery voltage.
The only difference between these two applications is that the
SLEEP pin in figure 2 is connected to the Vbat2 potential, so the
device is always in the active mode. In figure 3, the SLEEP pin is
toggled by the microprocessor; therefore, the device is selectively
and periodically toggled between active mode and sleep mode.
In both figures, the device output is connected to the input of an
A-to-D converter. In this configuration, the converter reference
voltage is Vbat1.
It is strongly recommended that an external bypass capacitor be
connected, in close proximity to the A139x device, between the
VCC and GND pins of the device to reduce both external noise
and noise generated by the chopper-stabilization circuits inside of
the A139x.
Cbypass Vbat2
Vbat1
Supply pin
VCC
MicroI/O
processor
VREF
A139x
OUT
SLEEP
GND
GND
I/O
Figure 2. Application circuit showing sleep mode disabled and output ratiometric to the
A139x supply.
Cbypass
Vbat1
Supply pin
MicroI/O
processor
Vbat2
VCC
VREF
A139x
OUT
SLEEP
GND
GND
I/O
Figure 3. Application circuit showing microprocessor-controlled sleep mode and output
ratiometric to the A139x supply.
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955 Perimeter Road
Manchester, NH 03103-3353 U.S.A.
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11
Micropower 3 V Linear Hall-Effect Sensor ICs
A1391, A1392,
A1393, and A1395
with Tri-State Output and User-Selectable Sleep Mode
APPLICATION CIRCUIT WITH USER-CONFIGURABLE RATIOMETRY
In figures 4 and 5, the microprocessor supply voltage determines
the ratiometric performance of the A139x output signal. As in the
circuits shown in figures 2 and 3, the device is powered by the
Vbat2 supply, but in this case, ratiometry is determined by the
microprocessor supply, Vbat1.
between the active and sleep modes.
The SLEEP pin is triggered by the output logic signal from the
microprocessor in figure 5, while in figure 4, the SLEEP pin is
connected to the device power supply pin. Therefore, the device
as configured in figure 4 is constantly in active mode, while
the device as configured in figure 5 can be periodically toggled
It is strongly recommended that an external bypass capacitor be
connected, in close proximity to the A139x device, between the
VCC and GND pins of the device to reduce both external noise
and noise generated by the chopper-stabilization circuits inside of
the A139x.
Cfilter
Vbat 1
The capacitor Cfilter is optional and can be used to prevent possible noise transients from the microprocessor supply reaching
the device reference pin, VREF.
Cbypass Vbat2
Supply pin
VCC
Micro- I/O
processor
I/O
VREF
A139x
OUT
SLEEP
GND
GND
Figure 4. Application circuit showing ratiometry of VREF . Sleep mode is disabled and the VREF
pin is tied to the microprocessor supply.
Cbypass Vbat2
Cfilter Vbat1
Supply pin
Micro- I/O
processor
I/O
VCC
VREF
A139x
OUT
SLEEP
GND
GND
Figure 5. Application circuit showing device reference pin, VREF, tied to microprocessor supply. The device
sleep mode also is controlled by the microprocessor.
Allegro MicroSystems
955 Perimeter Road
Manchester, NH 03103-3353 U.S.A.
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12
Micropower 3 V Linear Hall-Effect Sensor ICs
A1391, A1392,
A1393, and A1395
with Tri-State Output and User-Selectable Sleep Mode
SUMMARY OF SINGLE-DEVICE APPLICATION CIRCUITS
Device Pin Connections
Application Circuit
VREF pin (Ratiometric
Reference Supply)
Device Output
Cbypass Vbat2
Vbat1
Supply pin
VCC
MicroI/O
processor
VREF
A139x
OUT
SLEEP
GND
GND
I/O
Cbypass
Vbat1
VCC
VREF
A139x
MicroI/O
processor
OUT
SLEEP
GND
GND
I/O
Vbat 1
Connected to
A139x device supply,
VCC
Connected to
A139x device supply,
VCC
Ratiometric to device
supply (VCC), and
always valid
Connected to
A139x device supply,
VCC
Controlled by
microprocessor
Ratiometric to device
supply (VCC), and
controlled by the
microprocessor
Connected to
microprocessor supply
Connected to
A139x device supply,
VCC
Ratiometric to microprocessor supply, and
always valid
Connected to
microprocessor supply
Controlled by
microprocessor
Ratiometric to microprocessor supply,
and controlled by the
microprocessor
Vbat2
Supply pin
Cfilter
¯S¯
¯L¯
¯E¯
¯E¯
¯P¯ pin
Cbypass Vbat2
Supply pin
VCC
Micro- I/O
processor
I/O
VREF
A139x
OUT
SLEEP
GND
GND
Cbypass Vbat2
Cfilter Vbat1
Supply pin
Micro- I/O
processor
I/O
VCC
VREF
A139x
OUT
SLEEP
GND
GND
Allegro MicroSystems
955 Perimeter Road
Manchester, NH 03103-3353 U.S.A.
www.allegromicro.com
13
Micropower 3 V Linear Hall-Effect Sensor ICs
A1391, A1392,
A1393, and A1395
with Tri-State Output and User-Selectable Sleep Mode
APPLICATION CIRCUIT WITH MULTIPLE HALL DEVICES AND SINGLE A-TO-D CONVERTER
Multiple A139x devices can be connected to a single microprocessor or A-to-D converter input. In this case, a single device is periodically triggered and put into active mode by the microprocessor.
While one A139x device is in active mode, all of the other A139x
devices must remain in sleep mode. While these devices are in sleep
mode, their outputs are in a high-impedance state. In this circuit
configuration, the microprocessor reads the output of one device at a
time, according to microprocessor input to the SLEEP pins.
When multiple device outputs are connected to the same
microprocessor input, pulse timing from the microprocessor (for
example, lines A1 through A4 in figure 6) must be configured to
prevent more than one device from being in the awake mode at
any given time of the application. A device output structure can
be damaged when its output voltage is forced above the device
supply voltage by more than 0.1 V.
Cbypass Vbat2
VCC
VREF
A139x
OUT
SLEEP
GND
GND
Cbypass Vbat2
VCC
VREF
A1391x
Cfilter Vbat1
Supply pin
OUT
SLEEP
GND
GND
VCC
VREF
Microprocessor
A1
A2
A1
I/O
Cbypass Vbat2
A3
A139x
A4
A2
A3
OUT
SLEEP
GND
GND
A4
Cbypass Vbat2
VCC
VREF
A139x
OUT
SLEEP
GND
GND
Figure 6. Application circuit showing multiple A139x devices, controlled by a single microprocessor.
Allegro MicroSystems
955 Perimeter Road
Manchester, NH 03103-3353 U.S.A.
www.allegromicro.com
14
Micropower 3 V Linear Hall-Effect Sensor ICs
A1391, A1392,
A1393, and A1395
with Tri-State Output and User-Selectable Sleep Mode
PACKAGE EH, 6-PIN MLP/DFN
For Reference Only – Not for Tooling Use
(Reference Allegro DWG-0000373)
Dimensions in millimeters – NOT TO SCALE
Exact case and lead configuration at supplier discretion within limits shown
0.50
2.00 BSC
0.30
1.00 E
6
6
F
×2
1.00
C
1.50 E
3.70
0.15
3.00 BSC
A
1
1.25
E
2
0.15
C
1
×2
0.95
C PCB Layout Reference View
7X
D
C
0.08 C
SEATING
PLANE
0.25 ±0.05
0.75 ±0.05
0.5 BSC
1
2
YWW
LLL
NN
0.55 ±0.10
B
1.224 ±0.050
1
G
Y = Last two digits of year of manufacture
W = Week of manufacture
L = Lot number
N = Last two digits of device part number
6
+0.100
1.042 –0.150
A
Terminal #1 mark area
B
Exposed thermal pad (reference only, terminal #1
identifier appearance at supplier discretion)
C
Reference land pattern layout;
All pads a minimum of 0.20 mm from all adjacent pads; adjust as
necessary to meet application process requirements and PCB layout
tolerances; when mounting on a multilayer PCB, thermal vias at the
exposed thermal pad land can improve thermal dissipation (reference
EIA/JEDEC Standard JESD51-5)
Standard Branding Reference View
D
Coplanarity includes exposed thermal pad and terminals
E
Hall Element (not to scale); U.S. customary dimensions controlling
F
Active Area Depth, 0.32 mm NOM
G
Branding scale and appearance at supplier discretion
Allegro MicroSystems
955 Perimeter Road
Manchester, NH 03103-3353 U.S.A.
www.allegromicro.com
15
Micropower 3 V Linear Hall-Effect Sensor ICs
A1391, A1392,
A1393, and A1395
with Tri-State Output and User-Selectable Sleep Mode
Revision History
Number
Date
Description
7
October 26, 2011
Update Selection Guide
8
February 13, 2019
Minor editorial updates
9
February 28, 2020
Minor editorial updates
10
December 3, 2021
Updated package drawing (page 15) and minor editorial updates
Copyright 2021, Allegro MicroSystems.
Allegro MicroSystems reserves the right to make, from time to time, such departures from the detail specifications as may be required to permit
improvements in the performance, reliability, or manufacturability of its products. Before placing an order, the user is cautioned to verify that the
information being relied upon is current.
Allegro’s products are not to be used in any devices or systems, including but not limited to life support devices or systems, in which a failure of
Allegro’s product can reasonably be expected to cause bodily harm.
The information included herein is believed to be accurate and reliable. However, Allegro MicroSystems assumes no responsibility for its use; nor
for any infringement of patents or other rights of third parties which may result from its use.
Copies of this document are considered uncontrolled documents.
For the latest version of this document, visit our website:
www.allegromicro.com
Allegro MicroSystems
955 Perimeter Road
Manchester, NH 03103-3353 U.S.A.
www.allegromicro.com
16
