A1393

A1391, A1392, A1393, and A1395 Micro Power 3 V Linear Hall Effect Sensors withTri-State Output and User-Selectable Sleep Mode Features and Benefits ▪ ▪ ▪ ▪ ▪ ▪ ▪ ▪ ▪ ▪ High-impedance output during sleep mode Compatible with 2.5 to 3.5 V power supplies 10 mW power consumption in the active mode Miniature MLP/DFN package Ratiometric output scales with the ratiometric supply reference voltage (VREF pin) Temperature-stable quiescent output voltage and sensitivity Wide ambient temperature range: –20°C to 85°C ESD protection greater than 3 kV Solid-state reliability Preset sensitivity and offset at final test Description The A139x family of linear Hall effect sensor integrated circuits (ICs) provide a voltage output that is directly proportional to an applied magnetic field. Before amplification, the sensitivity of typical Hall effect ICs (measured in mV/G) is directly proportional to the current flowing through the Hall effect transducer element inside the ICs. In many applications, it is difficult to achieve sufficient sensitivity levels with a Hall effect sensor IC without consuming more than 3 mA of current. The A139x minimize current consumption to less than 25 μA through the addition of a user-selectable sleep mode. This makes these devices perfect for battery-operated applications such as: cellular phones, digital cameras, and portable tools. End users can control the current consumption of the A139x by applying a ¯LEEP ¯¯¯ logic level signal to the S¯ ¯ ¯ ¯ pin. The outputs of the devices are not valid (high-impedance mode) during sleep mode. The high-impedance output feature allows the connection of multiple A139x Hall effect devices to a single A-to-D converter input. The quiescent output voltage of these devices is 50 % nominal of the ratiometric supply reference voltage applied to the VREF pin of the device. The output voltage of the device is not ratiometric with respect to the SUPPLY pin. Package: 6 pin MLP/DFN (suffix EH) Approximate scale Continued on the next page… Functional Block Diagram VCC To all subcircuits Hall Element Regulator RRatio / 2 RRatio / 2 VREF Dynamic Offset Cancellation Amp Filter Out OUT Gain Offset Programming Logic SLEEP Circuit Reference Current GND 1391-DS, Rev. 2 A1391, A1392, A1393, and A1395 Description (continued) Micro Power 3 V Linear Hall Effect Sensors with Tri-State Output and User Selectable Sleep Mode offset cancellation circuits. End of line, post-packaging, factory programming allows precise control of device sensitivity and offset. These devices are available in a small 2.0 × 3.0 mm, 0.75 mm nominal height microleaded package (MLP/DFN). It is Pb (lead) free, with 100% matte tin leadframe plating. Despite the low power consumption of the circuitry in the A139x, the features required to produce a highly-accurate linear Hall effect IC have not been compromised. Each BiCMOS monolithic circuit integrates a Hall element, improved temperature-compensating circuitry to reduce the intrinsic sensitivity drift of the Hall element, a small-signal high-gain amplifier, and proprietary dynamic Selection Guide Part Number A1391SEHLT-T A1392SEHLT-T A1393SEHLT-T A1395SEHLT-T Sensitivity (mV / G, Typ.) Packing 7-in. reel, 3000 pieces/reel 7-in. reel, 3000 pieces/reel 7-in. reel, 3000 pieces/reel 7-in. reel, 3000 pieces/reel 1.25 2.50 5 10 Absolute Maximum Ratings* Supply Voltage Reverse-Supply Voltage Ratiometric Supply Reference Voltage Reverse-Ratiometric Supply Reference Voltage Logic Supply Voltage Reverse-Logic Supply Voltage Output Voltage Reverse-Output Voltage Operating Ambient Temperature Junction Temperature StorageTemperature *All ratings with reference to ground VCC VRCC VREF VRREF V¯ ¯ ¯ ¯ ¯ SLEEP ¯¯ ¯ ¯ ¯ VR¯ ¯ ¯ ¯ ¯ SLEEP ¯¯ ¯ ¯ ¯ VOUT VROUT TA TJ(MAX) Tstg Range S (VCC > 2.5 V) 8 –0.1 7 –0.1 32 –0.1 VCC + 0.1 –0.1 –20 to 85 165 –65 to 170 V V V V V V V V ºC ºC ºC Pin-out Diagram VCC OUT GND 1 2 3 6 5 4 VREF SLEEP GND Terminal List Table Pin 1 2 3 4 5 6 Name VCC OUT GND GND ¯ ¯¯ ¯ ¯ ¯¯ ¯ ¯ ¯ SLEEP VREF Supply Output Ground Ground Toggle sleep mode Supply for ratiometric reference Function Allegro MicroSystems, Inc. 115 Northeast Cutoff, Box 15036 Worcester, Massachusetts 01615-0036 (508) 853-5000 www.allegromicro.com 2 A1391, A1392, A1393, and A1395 Micro Power 3 V Linear Hall Effect Sensors with Tri-State Output and User Selectable Sleep Mode Device Characteristics Tables ELECTRICAL CHARACTERISTICS valid through full operating ambient temperature range, unless otherwise noted Characteristic Supply Voltage Nominal Supply Voltage Supply Zener Clamp Voltage Ratiometric Reference Voltage2 Ratiometric Reference Zener Clamp Voltage ¯ ¯¯ ¯ ¯ Input Voltage ¯¯ ¯ ¯ ¯ SLEEP ¯ ¯¯ ¯ ¯ Input Threshold ¯¯ ¯ ¯ ¯ SLEEP Symbol VCC VCCN VCCZ VREF VREFZ VINH VINL RREF fC ISLEEP ICC PSRVOQ Test Conditions ICC = 7 mA, TA = 25°C IVREF = 3 mA, TA = 25°C For active mode For sleep mode VSLEEP > VINH , VCC = VCCN, TA = 25°C VSLEEP < VINL, VCC = VCCN, TA = 25°C VCC = VCCN, TA = 25°C VSLEEP = 3 V, VCC = VCCN VSLEEP < VINL, VCC = VCCN, TA = 25°C VSLEEP > VINH , VCC = VCCN, TA = 25°C fAC < 1 kHz Min. 2.5 – 6 2.5 6 –0.1 – – 250 – – – – – – Typ.1 – 3.0 8.3 – 8.3 – 0.45 × VCC 0.20 × VCC – 5 200 1 0.025 3.2 –60 Max. 3.5 – – VCC – VCC + 0.5 – – – – – – – – – Units V V V V V V V V kΩ MΩ kHz μA mA mA dB Ratiometric Reference Input Resistance Chopper Stabilization Chopping Frequency ¯ ¯¯ ¯ ¯ Input Current ¯¯ ¯ ¯ ¯ SLEEP Supply Current3 Quiescent Output Power Supply Rejection4 1Typical data are for initial design estimations only, and assume optimum manufacturing and application conditions, such as T = 25°C. Performance A may vary for individual units, within the specified maximum and minimum limits. 2 Voltage applied to the VREF pin. Note that the V voltage must be less than or equal to V . Degradation in device accuracy will occur with applied voltages of less than 2.5 V. 3 If the VREF pin is tied to the VCC pin, the supply current would be I 4f AC is any ac component frequency that exists on the supply line. REF cc CC + VREF / RREF Allegro MicroSystems, Inc. 115 Northeast Cutoff, Box 15036 Worcester, Massachusetts 01615-0036 (508) 853-5000 www.allegromicro.com 3 A1391, A1392, A1393, and A1395 Micro Power 3 V Linear Hall Effect Sensors with Tri-State Output and User Selectable Sleep Mode OUTPUT CHARACTERISTICS valid through full operating ambient temperature range, unless otherwise noted Characteristic Output Voltage Saturation Limits2 Maximum Voltage Applied to Output Sensitivity3 Symbol VOUTH VOUTL Test Conditions B = X, VCC = VCCN, VREF ≤ VCC B = –X, VCC = VCCN, VREF ≤ VCC Min. – – – – – – – – – – 15 – – – – – – – – Typ.1 VREF – 0.1 0.1 – 1.25 2.50 5 10 0.500 × VREF 20 4M – – 10 6 – – 12 – – Max. – – VCC + 0.1 – – – – – – – – 10 – 12 20 40 24 40 80 Units V V V mV/G mV/G mV/G mV/G V Ω Ω kΩ nF kHz mVpp mVpp mVpp mVpp mVpp mVpp VOUTMAX VSLEEP < VINL A1391 TA = 25°C, VCC = VREF = VCCN A1392 TA = 25°C, VCC = VREF = VCCN A1393 TA = 25°C, VCC = VREF = VCCN A1395 TA = 25°C, VCC = VREF = VCCN TA = 25°C, B = 0 G fout = 1 kHz, VSLEEP > VINH , active mode fout = 1 kHz, VSLEEP < VINL, sleep mode Output to ground Output to ground –3 dB point, VOUT = 1 Vpp sinusoidal, VCC = VCCN Cbypass = 0.1 μF, BWexternalLPF = 2 kHz 1391 Cbypass = 0.1 μF, no load 1392 1393 1395 Cbypass = 0.1 μF, no load Cbypass = 0.1 μF, BWexternalLPF = 2 kHz Cbypass = 0.1 μF, no load Cbypass = 0.1 μF, no load Sens Quiescent Output Output Resistance4 Output Load Resistance Output Load Capacitance Output Bandwidth VOUTQ ROUT RL CL BW Noise5,6 Vn 1Typical data are for initial design estimations only, and assume optimum manufacturing and application conditions, such as TA = 25°C. Performance may vary for individual units, within the specified maximum and minimum limits. 2This test requires positive and negative magnetic fields sufficient to swing the output driver between fully OFF and saturated (ON), respectively. The value of vector X is NOT intended to indicate a range of linear operation. 3For V REF values other than VREF = VCCN , the sensitivity can be derived from the following equation: 0.416 × VREF. 4f OUT is the output signal frequency 5Noise specification includes digital and analog noise. 5Values for BW externalLPF do not include any noise resulting from noise on the externally-supplied VREF voltage. Allegro MicroSystems, Inc. 115 Northeast Cutoff, Box 15036 Worcester, Massachusetts 01615-0036 (508) 853-5000 www.allegromicro.com 4 A1391, A1392, A1393, and A1395 Micro Power 3 V Linear Hall Effect Sensors with Tri-State Output and User Selectable Sleep Mode OUTPUT TIMING CHARACTERISTICS1 TA = 25°C Characteristic Power-On Time3 Power-Off Time4 1See 2Typical Symbol tPON tPOFF Test Conditions Min. – – Typ.2 40 1 Max. 60 – Units μs μs figure 1 for explicit timing delays. data are for initial design estimations only, and assume optimum manufacturing and application conditions, such as TA = 25°C. Performance may vary for individual units, within the specified maximum and minimum limits. 3Power-On Time is the elapsed time after the voltage on the ¯ ¯¯ ¯ ¯ pin exceeds the active mode threshold voltage,V SLEEP ¯¯ ¯ ¯ ¯ INH, until the time the device output reaches 90% of its value. When the device output is loaded with the maximum capacitance of 10 nF, the Power-On Time range is guaranteed for input ¯ ¯¯ ¯ ¯ pin frequencies less than 10 Hz. SLEEP ¯¯ ¯ ¯ ¯ 4Power-Off Time is the duration of time between when the signal on the ¯ ¯ ¯ ¯ ¯ pin switches from HIGH to LOW and when I SLEEP ¯¯ ¯ ¯ ¯ CC drops to under 100 μA. During this time period, the output goes into the HIGH impedance state. MAGNETIC CHARACTERISTICS TA = 25°C Characteristic Ratiometry Ratiometry Positive Linearity Negative Linearity Symmetry Symbol ΔVOUTQ(ΔV) ΔSens(ΔV) Lin+ Lin– Sym Test Conditions Min. – – – – – Typ.* 100 100 100 100 100 Max. – – – – – Units % % % % % *Typical data are for initial design estimations only, and assume optimum manufacturing and application conditions, such as TA = 25°C. Performance may vary for individual units, within the specified maximum and minimum limits. Allegro MicroSystems, Inc. 115 Northeast Cutoff, Box 15036 Worcester, Massachusetts 01615-0036 (508) 853-5000 www.allegromicro.com 5 A1391, A1392, A1393, and A1395 Micro Power 3 V Linear Hall Effect Sensors with Tri-State Output and User Selectable Sleep Mode Electrical Characteristic Data Supply Current versus Ambient Temperature A139x, VCC = VREF = 3 V 3.5 3.0 ICC (mA) 2.5 2.0 1.5 1.0 0.5 0 -20 -5 10 25 40 55 70 85 Active Mode Sleep Mode TA (°C) Ratiometric Reference Input Current versus Ambient Temperature 19 17 15 13 11 9 7 5 3 1 -20 -5 10 25 40 55 70 85 A139x, VCC = VREF= VSLEEP = 3 V SLEEP Input Current versus Ambient Temperature 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 -20 -5 A139x, VCC = VREF= VSLEEP = 3 V IREF (µA) ISLEEP (µA) 10 25 40 55 70 85 TA (°C) TA (°C) Allegro MicroSystems, Inc. 115 Northeast Cutoff, Box 15036 Worcester, Massachusetts 01615-0036 (508) 853-5000 www.allegromicro.com 6 A1391, A1392, A1393, and A1395 Micro Power 3 V Linear Hall Effect Sensors with Tri-State Output and User Selectable Sleep Mode Magnetic Characteristic Data Average Ratiometry, VOUTQ , versus Ambient Temperture (A139x) 101.0 Average Ratiometry, Voq (%) 100.8 100.6 100.4 100.2 100.0 99.8 99.6 99.4 99.2 99.0 -20 -5 10 25 40 TA (°C) 2.5 to 3 V 3.5 to 3 V 55 70 85 Average Ratiometry, Sens, versus Ambient Temperture (A1391) 102.0 Average Ratiometry, Sens (%) Average Ratiometry, Sens (%) Average Ratiometry, Sens, versus Ambient Temperture (A1392) 102.0 101.5 101.0 100.5 100.0 99.5 99.0 98.5 98.0 97.5 -20 -5 10 25 40 TA (°C) 55 70 85 101.5 101.0 100.5 100.0 99.5 99.0 98.5 98.0 97.5 2.5 to 3 V 3.5 to 3 V 2.5 to 3 V 3.5 to 3 V -20 -5 10 25 40 TA (°C) 55 70 85 Average Symmetry, Vcc=Vref=Vsleep=3V (A139x) 102.0 101.5 Average Symetry (%) Average Linearity (A139x) 102.0 101.5 Average Linearity (%) 101.0 100.5 100.0 99.5 99.0 98.5 98.0 97.5 97.0 -20 -5 10 Linearity - , Vcc=3.5V Linearity +, Vcc=3.5V Linearity +, Vcc=2.5V Linearity -, Vcc = 2.5V 101.0 100.5 100.0 99.5 99.0 98.5 98.0 97.5 -20 -5 10 25 40 TA (°C) 55 70 85 25 40 TA (°C) 55 70 85 Allegro MicroSystems, Inc. 115 Northeast Cutoff, Box 15036 Worcester, Massachusetts 01615-0036 (508) 853-5000 www.allegromicro.com 7 A1391, A1392, A1393, and A1395 Micro Power 3 V Linear Hall Effect Sensors with Tri-State Output and User Selectable Sleep Mode THERMAL CHARACTERISTICS may require derating at maximum conditions, see application information Characteristic Symbol Test Conditions 1-layer PCB with copper limited to solder pads Package Thermal Resistance RθJA 2-layer PCB with 0.6 in.2 of copper area each side, connected by thermal vias 4-layer PCB based on JEDEC standard Min. Units 221 70 50 ºC/W ºC/W ºC/W Power Dissipation versus Ambient Temperature 4500 4000 3500 Power Dissipation, PD (m W) 3000 2500 2000 1500 1000 500 0 20 4-layer PCB (RθJA = 50 ºC/W) 2-layer PCB (RθJA = 70 ºC/W) 1-layer PCB (RθJA = 221 ºC/W) 40 60 80 100 120 Temperature (°C) 140 160 180 Allegro MicroSystems, Inc. 115 Northeast Cutoff, Box 15036 Worcester, Massachusetts 01615-0036 (508) 853-5000 www.allegromicro.com 8 A1391, A1392, A1393, and A1395 Micro Power 3 V Linear Hall Effect Sensors with Tri-State Output and User Selectable Sleep Mode Characteristics Definitions Ratiometric. The A139x devices feature ratiometric output. The quiescent voltage output and sensitivity are proportional to the ratiometric supply reference voltage. The percent ratiometric change in the quiescent voltage output is defined as: ΔVOUTQ(ΔV) = ΔVOUTQ(VREF)÷ ΔVOUTQ(3V) VREF ÷ 3 V × 100 % Linearity and Symmetry. The on-chip output stage is designed to provide a linear output with maximum supply voltage of VCCN. Although application of very high magnetic fields will not damage these devices, it will force the output into a non-linear region. Linearity in percent is measured and defined as Lin+ = VOUT(+B) – VOUTQ 2(VOUT(+B / 2) – VOUTQ ) VOUT(–B) – VOUTQ 2(VOUT(–B / 2) – VOUTQ ) × 100 % (1) (2) (3) (4) and the percent ratiometric change in sensitivity is defined as: ΔSens(ΔV) = ΔSens(VREF)÷ ΔSens(3V) VREF ÷ 3 V Lin– = × 100% × 100 % and output symmetry as Sym = VOUT(+B) – VOUTQ VOUTQ – VOUT(–B) × 100 % (5) Allegro MicroSystems, Inc. 115 Northeast Cutoff, Box 15036 Worcester, Massachusetts 01615-0036 (508) 853-5000 www.allegromicro.com 9 A1391, A1392, A1393, and A1395 Micro Power 3 V Linear Hall Effect Sensors with Tri-State Output and User Selectable Sleep Mode Device Low-Power Functionality A139x are low-power Hall effect sensor ICs that are perfect for power sensitive customer applications. The current consumption of these devices is typically 3.2 mA, while the device is in the active mode, and less than 25 μA when the device is in the sleep ¯LEEP ¯¯¯ mode. Toggling the logic level signal connected to the S¯ ¯ ¯ ¯ pin drives the device into either the active mode or the sleep mode. A logic low sleep signal drives the device into the sleep mode, while a logic high sleep signal drives the device into the active mode. In the case in which the VREF pin is powered before the VCC pin, the device will not operate within the specified limits until the supply voltage is equal to the reference voltage. When the device is switched from the sleep mode to the active mode, a time defined by tPON must elapse before the output of the device is valid. The device output transitions into the high impedance state approximately tPOFF seconds after a logic low signal is applied to ¯LEEP ¯¯¯ the S¯ ¯ ¯ ¯ pin (see figure 1). If possible, it is recommended to power-up the device in the sleep mode. However, if the application requires that the device be powered on in the active mode, then a 10 kΩ resistor in series ¯LEEP ¯¯¯ with the S¯ ¯ ¯ ¯ pin is recommended. This resistor will limit the ¯LEEP ¯¯¯ current that flows into the S¯ ¯ ¯ ¯ pin if certain semiconductor junctions become forward biased before the ramp up of the voltage on the VCC pin. Note that this current limiting resistor is not ¯LEEP ¯¯¯ required if the user connects the S¯ ¯ ¯ ¯ pin directly to the VCC pin. The same precautions are advised if the device supply is ¯LEEP ¯¯¯ powered-off while power is still applied to the S¯ ¯ ¯ ¯ pin. VCC VSLEEP ICC +B B field 0 –B VOUT H IGH IMPEDANCE HIGH IMPEDANCE H IGH IMPEDANCE tPON Figure 1. A139x Timing Diagram tPOFF tPON tPOFF Allegro MicroSystems, Inc. 115 Northeast Cutoff, Box 15036 Worcester, Massachusetts 01615-0036 (508) 853-5000 www.allegromicro.com 10 A1391, A1392, A1393, and A1395 Micro Power 3 V Linear Hall Effect Sensors with Tri-State Output and User Selectable Sleep Mode Device Supply Ratiometry Application Circuit Figures 2 and 3 present applications where the VCC pin is connected together with the VREF pin of the A139x. Both of these pins are connected to the battery, Vbat2. In this case, the device output will be ratiometric with respect to the battery voltage. The only difference between these two applications is that the ¯LEEP ¯¯¯ S¯ ¯ ¯ ¯ pin in figure 2 is connected to the Vbat2 potential, so the ¯LEEP ¯¯¯ device is always in the active mode. In figure 3, the S¯ ¯ ¯ ¯ pin is toggled by the microprocessor; therefore, the device is selectively and periodically toggled between active mode and sleep mode. In both figures, the device output is connected to the input of an A-to-D converter. In this configuration, the converter reference voltage is Vbat1. It is strongly recommended that an external bypass capacitor be connected, in close proximity to the A139x device, between the VCC and GND pins of the device to reduce both external noise and noise generated by the chopper-stabilization circuits inside of the A139x. Vbat1 Supply pin Cbypass Vbat2 VCC A139x OUT VREF SLEEP MicroI/O processor I/O GND GND Figure 2. Application circuit showing sleep mode disabled and output ratiometirc to the A139x supply. Vbat1 Supply pin Cbypass Vbat2 VCC A139x OUT VREF SLEEP MicroI/O processor I/O GND GND Figure 3. Application circuit showing microprocessor-controlled sleep mode and output ratiometirc to the A139x supply. Allegro MicroSystems, Inc. 115 Northeast Cutoff, Box 15036 Worcester, Massachusetts 01615-0036 (508) 853-5000 www.allegromicro.com 11 A1391, A1392, A1393, and A1395 Micro Power 3 V Linear Hall Effect Sensors with Tri-State Output and User Selectable Sleep Mode Application Circuit with User-Configurable Ratiometry In figures 4 and 5, the microprocessor supply voltage determines the ratiometric performance of the A139x output signal. As in the circuits shown in figures 2 and 3, the device is powered by the Vbat2 supply, but in this case, ratiometry is determined by the microprocessor supply, Vbat1. ¯LEEP ¯¯¯ The S¯ ¯ ¯ ¯ pin is triggered by the output logic signal from the ¯LEEP ¯¯¯ microprocessor in figure 5, while in figure 4, the S¯ ¯ ¯ ¯ pin is connected to the device power supply pin. Therefore, the device as configured in figure 4 is constantly in active mode, while the device as confiugred in figure 5 can be periodically toggled between the active and sleep modes. The capacitor Cfilter is optional, and can be used to prevent possible noise transients from the microprocessor supply reaching the device reference pin, VREF. It is strongly recommended that an external bypass capacitor be connected, in close proximity to the A139x device, between the VCC and GND pins of the device to reduce both external noise and noise generated by the chopper-stabilization circuits inside of the A139x. Cfilter Vbat 1 Supply pin Cbypass Vbat2 VCC A139x OUT SLEEP VREF Micro- I/O processor I/O GND GND Figure 4. Application circuit showing ratiometry of VREF . Sleep mode is disabled and the VREF pin is tied to the microprocessor supply. Cfilter Vbat1 Supply pin Cbypass Vbat2 VCC A139x OUT SLEEP VREF Micro- I/O processor I/O GND GND Figure 5. Application circuit showing device reference pin, VREF, tied to microprocessor supply. The device sleep mode also is controlled by the microprocessor. Allegro MicroSystems, Inc. 115 Northeast Cutoff, Box 15036 Worcester, Massachusetts 01615-0036 (508) 853-5000 www.allegromicro.com 12 A1391, A1392, A1393, and A1395 Micro Power 3 V Linear Hall Effect Sensors with Tri-State Output and User Selectable Sleep Mode Summary of Single-Device Application Circuits Device Pin Connections Application Circuit VREF pin (Ratiometric Reference Supply) ¯ ¯¯ ¯ ¯ pin SLEEP ¯¯ ¯ ¯ ¯ Device Output Vbat1 Supply pin Cbypass Vbat2 VCC A139x OUT VREF SLEEP MicroI/O processor I/O Connected to A139x device supply, VCC Connected to A139x device supply, VCC Ratiometric to device supply (VCC), and always valid GND GND Vbat1 Supply pin Cbypass Vbat2 VCC A139x OUT VREF SLEEP MicroI/O processor I/O Connected to A139x device supply, VCC Controlled by microprocessor Ratiometric to device supply (VCC), and controlled by the microprocessor GND GND Cfilter Vbat 1 Supply pin Cbypass Vbat2 VCC A139x OUT SLEEP VREF Micro- I/O processor I/O Connected to microprocessor supply Connected to A139x device supply, VCC Ratiometric to microprocessor supply, and always valid GND GND Cfilter Vbat1 Supply pin Cbypass Vbat2 VCC A139x OUT SLEEP VREF Micro- I/O processor I/O Connected to microprocessor supply Controlled by microprocessor Ratiometric to microprocessor supply, and controlled by the microprocessor GND GND Allegro MicroSystems, Inc. 115 Northeast Cutoff, Box 15036 Worcester, Massachusetts 01615-0036 (508) 853-5000 www.allegromicro.com 13 A1391, A1392, A1393, and A1395 Micro Power 3 V Linear Hall Effect Sensors with Tri-State Output and User Selectable Sleep Mode Application Circuit with Multiple Hall Devices and a Single A-to-D Converter Multiple A139x devices can be connected to a single microprocessor or A-to-D converter input. In this case, a single device is periodically triggered and put into active mode by the microprocessor. While one A139x device is in active mode, all of the other A139x devices must remain in sleep mode. While these devices are in sleep mode, their outputs are in a high-impedance state. In this circuit configuration, the microprocessor reads the output of one device at a time, ¯LEEP ¯¯¯ according to microprocessor input to the S¯ ¯ ¯ ¯ pins. When multiple device outputs are connected to the same microprocessor input, pulse timing from the microprocessor (for example, lines A1 through A4 in figure 6) must be configured to prevent more than one device from being in the awake mode at any given time of the application. A device output structure can be damaged when its output voltage is forced above the device supply voltage by more than 0.1 V. Cbypass Vbat2 VCC OUT GND VREF SLEEP GND A139x Cbypass Vbat2 VCC OUT Cfilter Vbat1 Supply pin Microprocessor A1 A2 A1 A3 A4 A2 I/O VREF SLEEP GND A1391x GND Cbypass Vbat2 VCC OUT GND VREF SLEEP GND A139x A3 A4 Cbypass Vbat2 VCC OUT GND VREF SLEEP GND A139x Figure 6. Application circuit showing multiple A139x devices, controlled by a single microprocessor. Allegro MicroSystems, Inc. 115 Northeast Cutoff, Box 15036 Worcester, Massachusetts 01615-0036 (508) 853-5000 www.allegromicro.com 14 A1391, A1392, A1393, and A1395 Micro Power 3 V Linear Hall Effect Sensors with Tri-State Output and User Selectable Sleep Mode Package EH, 6-pin MLP/DFN 2.15 .085 1.85 .073 A 1 .0394 NOM B C D Dimensions preliminary only, not for tooling use (reference JEDEC MO-229 WCED) Dimensions in millimeters U.S. Customary dimensions (in.) in brackets, for reference only Dimensions exclusive of mold flash, gate burrs, and dambar protrusions Exact case and lead configuration at supplier discretion within limits shown A Terminal #1 mark area B Exposed thermal pad C 6 C 1.5 .0591 NOM C 3.15 .124 2.85 .112 A Hall Element (not to scale); U.S. customary dimensions controlling Active Area Depth, 0.34 [.013] Reference pad layout (reference IPC7351); adjust as necessary to meet application process requirements; when mounting on a multilayer PCB, thermal vias at the exposed thermal pad land can improve thermal dissipation (reference EIA/JEDEC Standard JESD51-5) 5X 0.08 [.003] C 6X 0.30 .012 0.18 .007 0.10 [.004] M C A B 0.05 [.002] M C 0.50 .020 0.50 .020 E 0.30 .012 6 1.00 .039 3.70 .146 1.25 .049 0.225 .009 REF 0.65 .026 0.45 .018 D E 1 2 C SEATING PLANE 0.80 .031 0.70 .028 0.20 .008 REF 0.05 .002 0.00 .000 1 2 B 1.224 .0482 NOM 0.25 .010 1 0.25 .010 0.95 .037 6 1.042 .0410 NOM The products described herein are manufactured under one or more of the following U.S. patents: 5,045,920; 5,264,783; 5,442,283; 5,389,889; 5,581,179; 5,517,112; 5,619,137; 5,621,319; 5,650,719; 5,686,894; 5,694,038; 5,729,130; 5,917,320; and other patents pending. Allegro MicroSystems, Inc. reserves the right to make, from time to time, such departures from the detail specifications as may be required to permit improvements in the performance, reliability, or manufacturability of its products. Before placing an order, the user is cautioned to verify that the information being relied upon is current. Allegro products are not authorized for use as critical components in life-support devices or systems without express written approval. The information included herein is believed to be accurate and reliable. However, Allegro MicroSystems, Inc. assumes no responsibility for its use; nor for any infringement of patents or other rights of third parties which may result from its use. Copyright © 2005-2006 Allegro MicroSystems, Inc. Allegro MicroSystems, Inc. 115 Northeast Cutoff, Box 15036 Worcester, Massachusetts 01615-0036 (508) 853-5000 www.allegromicro.com 15