APS11000 and APS11060
Vertical and Planar Hall-Effect Switches
2
-
FEATURES AND BENEFITS
DESCRIPTION
• ASIL A functional safety compliance (pending
confirmation)
• Planar and vertical Hall-effect sensor ICs
• 3.3 to 24 V operation
• Automotive-grade ruggedness and fault tolerance
□□ Extended AEC-Q100 qualification
□□ Internal protection circuits enable 40 V load dump
compliance
□□ Reverse-battery protection
□□ Output short-circuit and overvoltage protection
□□ Operation from –40°C to 165°C junction temperature
□□ High EMC immunity
• Omnipolar and unipolar switch threshold options
• Choice of output polarity
• Open-drain output
• Solid-state reliability
The APS11000 and APS11060 families of Hall-effect switches
are AEC-Q100 qualified for 24 V automotive applications
and compliant with ISO 26262:2011 ASIL A (pending
confirmation). These sensors are temperature-stable and suited
for operation over extended junction temperature ranges up to
165°C. The APS11000 and APS11060 families are available
in several different magnetic sensitivities and polarities to
offer flexible options for system design. They are available in
active high and active low variants for ease of integration into
electronic subsystems.
PACKAGES
The APS11000 features a Hall-effect element that is sensitive
to magnetic flux perpendicular to the face of the IC package.
The APS11060 features a vertical Hall-effect sensing element
sensitive to magnetic flux parallel to the face of the IC package.
Continued on next page...
TYPICAL APPLICATIONS
Not to scale
•
•
•
•
•
•
•
3-pin SOT23W
(suffix LH)
3-pin SIP (suffix UA)
Gear shift selectors and driver controls (PRNDL)
Human-machine interfaces (HMI) and driver controls
Open/close sensor for LCD screens/doors/lids/trunks
Clutch/brake position sensor
Magnetically actuated lighting
Wiper home/end position sensor
End of travel and index sensors
VCC
POK
Regulator
Dynamic Offset
Cancellation
To All Subcircuits
Low-Pass
Filter
Hall
Amp.
Schmitt
Trigger
Sample, Hold &
Averaging
VOUT
Output
Control
Current
Limit
GND
Figure 1: Functional Block Diagram
APS11060-DS, Rev. 4
MCO-0000392
May 12, 2020
APS11000 and
APS11060
Vertical and Planar Hall-Effect Switches
DESCRIPTION (continued)
The devices include on-board reverse-battery and overvoltage
protection for operating directly from an automobile battery, as
well as protection from shorts to ground by limiting the output
current until the short is removed. The device is especially suited
for operation from unregulated supplies.
Two package styles provide a choice of through-hole or surface
mounting. Package type LH is a modified 3-pin SOT23W surface
mount package, while package type UA is a 3-pin ultra-mini SIP
for through-hole mounting. Both packages are lead (Pb) free, with
100% matte-tin-plated leadframes.
Complete Part
Number Format
Allegro Iden�fier (Device Family)
APS – Digital Posi�on Sensor
Configura�on Op�ons
Planar
APS11000
Ver�cal
APS11060
E.g. APS11060LLHAXX-XXX
APS11060LLHALT - 0 SL
RoHS
COMPLIANT
LLHALT-0SL
Allegro Device Number
11000 – Planar Hall-effect Switch
11060 – Ver�cal Hall-effect Switch
Output Polarity for B > BOP
H – High (Output Off)
L – Low (Output On)
Opera�ng Mode
S – Unipolar South Sensing
P – Omnipolar (North and South) Sensing
N – Unipolar North Sensing
Device Switch Threshold Magnitude
0 – 35 G BOP, 25 G BRP (typ.)
1 – 95 G BOP, 70 G BRP (typ.)
2 – 150 G BOP, 125 G BRP (typ.)
3 – 280 G BOP, 225 G BRP (typ.)
Instruc�ons (Packing)
LT – 7-in. reel, 3,000 pieces/reel (LH Only)
LX – 13-in. reel, 10,000 pieces/reel (LH Only)
[blank] – bulk, 500 pieces/bag (UA Only)
Package Designa�on
LHA – 3-pin SOT23W Surface Mount
UAA – 3-pin SIP Through-Hole
Ambient Opera�ng Temperature Range
L – -40°C to +150°C
Allegro MicroSystems
955 Perimeter Road
Manchester, NH 03103-3353 U.S.A.
www.allegromicro.com
2
APS11000 and
APS11060
Vertical and Planar Hall-Effect Switches
SELECTION GUIDE
Part Number [1]
Packing [2]
Mounting
Output
State for
B > BOP
Sensing
Orientation
Operating
Mode
Z-Axis
Unipolar
South
Z-Axis
Omnipolar
APS11000LLHALT-0SL
7-in. reel, 3000 pieces/reel
3-pin SOT23W surface mount
Low
APS11000LLHALX-0SL
13-in. reel, 10000 pieces/reel
3-pin SOT23W surface mount
Low
APS11000LUAA-0SL
Bulk, 500 pieces/bag
3-pin SIP through-hole
Low
APS11000LLHALT-0SH
7-in. reel, 3000 pieces/reel
3-pin SOT23W surface mount
High
APS11000LLHALX-0SH
13-in. reel, 10000 pieces/reel
3-pin SOT23W surface mount
High
APS11000LUAA-0SH
Bulk, 500 pieces/bag
3-pin SIP through-hole
High
APS11000LLHALT-0PL
7-in. reel, 3000 pieces/reel
3-pin SOT23W surface mount
Low
APS11000LLHALX-0PL
13-in. reel, 10000 pieces/reel
3-pin SOT23W surface mount
Low
APS11000LUAA-0PL
Bulk, 500 pieces/bag
3-pin SIP through-hole
Low
APS11060LLHALT-0SL
7-in. reel, 3000 pieces/reel
3-pin SOT23W surface mount
Low
X-Axis
APS11060LLHALX-0SL
13-in. reel, 10000 pieces/reel
3-pin SOT23W surface mount
Low
X-Axis
APS11060LUAA-0SL
Bulk, 500 pieces/bag
3-pin SIP through-hole
Low
Y-Axis
APS11060LLHALT-0SH
7-in. reel, 3000 pieces/reel
3-pin SOT23W surface mount
High
X-Axis
APS11060LLHALX-0SH
13-in. reel, 10000 pieces/reel
3-pin SOT23W surface mount
High
X-Axis
APS11060LUAA-0SH
Bulk, 500 pieces/bag
3-pin SIP through-hole
High
Y-Axis
APS11060LLHALT-0PL
7-in. reel, 3000 pieces/reel
3-pin SOT23W surface mount
Low
X-Axis
APS11060LLHALX-0PL
13-in. reel, 10000 pieces/reel
3-pin SOT23W surface mount
Low
X-Axis
APS11060LUAA-0PL
Bulk, 500 pieces/bag
3-pin SIP through-hole
Low
Y-Axis
[1] Contact Allegro
[2] Contact Allegro
Unipolar
South
Omnipolar
MicroSystems for options not listed in the selection guide.
MicroSystems for additional packing options.
Allegro MicroSystems
955 Perimeter Road
Manchester, NH 03103-3353 U.S.A.
www.allegromicro.com
3
APS11000 and
APS11060
Vertical and Planar Hall-Effect Switches
ABSOLUTE MAXIMUM RATINGS
Characteristic
Supply
Voltage [1]
Symbol
Notes
Rating
Units
VCC
40
V
VRCC
–18
V
Voltage [1]
VOUT
–0.3 to 32
V
Output Current [2]
IOUT
40
mA
Reverse Output Current
IROUT
–50
mA
Magnetic Flux Density [3]
B
Unlimited
G
Operating Ambient Temperature
TA
–40 to 150
°C
Maximum Junction Temperature
TJ(max)
165
°C
Tstg
–65 to 170
°C
Reverse Supply Voltage [1]
Output
Storage Temperature
Range L
[1] This
rating does not apply to extremely short voltage transients. Transient events such as Load Dump and/or ESD have individual, specific ratings.
short-circuit current limiting device.
[3] Guaranteed by design.
[2] Through
ESD PERFORMANCE [4]
Characteristic
ESD Voltage
[4] ESD
Symbol
Notes
Rating
Units
VESD(HBM)
Human Body Model according to AEC-Q100-002
±11
kV
VESD(CDM)
Charged Device Model according to AEC-Q100-011
±1
kV
ratings provided are based on qualification per AEC-Q100 as an expected level of ESD robustness.
Allegro MicroSystems
955 Perimeter Road
Manchester, NH 03103-3353 U.S.A.
www.allegromicro.com
4
APS11000 and
APS11060
Vertical and Planar Hall-Effect Switches
PINOUT DIAGRAMS AND TERMINAL LIST
GND
(View from branded face)
1
VOUT
VCC
2
3
VOUT
2
GND
1
VCC
3
3-pin SIP
(suffix UA)
3-pin SOT23W
(suffix LH)
Terminal List
Name
Description
Number
LH
UA
Connects power supply to chip
1
1
VOUT
Output from circuit
2
3
GND
Terminal for ground connection
3
2
VCC
Allegro MicroSystems
955 Perimeter Road
Manchester, NH 03103-3353 U.S.A.
www.allegromicro.com
5
APS11000 and
APS11060
Vertical and Planar Hall-Effect Switches
ELECTRICAL CHARACTERISTICS: Valid over full operating voltage and ambient temperature ranges for TJ < TJ(max) and
CBYP = 0.1 µF, unless otherwise specified
Characteristics
Symbol
Test Conditions
Min.
Typ. [1]
Max.
Unit
SUPPLY AND STARTUP
Supply Voltage
VCC
Supply Current
ICC
Power-On Time [2]
tPO
Power-On State
POS
[5]
VCC(UV)EN
Undervoltage Lockout [3]
UVLO Reset Time [3]
3.3
–
24
V
APS11000
1
2.2
4
mA
APS11060
1
2.5
5
mA
VCC ≥ VCC(min)
–
180
350
µs
2
–
V
VCC ≥ VCC(min), t < tPO
High
–
VCC ≥ VCC(min) → VCC < VCC(min)
–
VCC(UV)DIS VCC < VCC(min) → VCC ≥ VCC(min)
–
2.3
–
V
–
100
–
µs
tPOR
CHOPPER STABILIZATION AND OUTPUT MOSFET CHARACTERISTICS
Chopping Frequency
fC
Output Leakage Current [4]
IOUTOFF
VOUT(OFF) = 12 V, TA = –40°C to 85°C, output off,
VCC ≥ VCC(min), t > tPO
Output Leakage Current
IOUTOFF
VOUT(OFF) = 24 V, output off, VCC ≥ VCC(min), t > tPO
Output Leakage Current,
Power-On [4][5]
–
800
–
kHz
–
–
0.1
µA
–
–
1
µA
IOUTOFF(PO) VCC ≥ VCC(min), t < tPO
–
–
95
µA
Output Saturation Voltage
VOUT(SAT)
–
100
500
mV
Output Off Voltage
VOUT(OFF)
Output on, IOUT = 5 mA
–
–
24
V
Output Rise Time [6][7]
tr
CL = 20 pF, RPULL-UP = 4.8 kΩ
–
0.2
2
µs
Output Fall Time [6][7]
tf
CL = 20 pF, RPULL-UP = 4.8 kΩ
–
0.1
2
µs
Output on
15
–
40
mA
ON-BOARD PROTECTION
Output Short-Circuit Current Limit
IOM
Output Zener Clamp Voltage
VZ(OUT)
IOUT = 1.5 mA, TA = 25°C
32
–
–
V
Supply Zener Clamp Voltage
VZ
ICC = ICC(max) + 3 mA, TA = 25°C
40
–
–
V
Reverse Battery Zener Clamp Voltage
VRZ
ICC = –5 mA, TA = 25°C
–
–
–18
V
Reverse Battery Current
IRCC
VCC = –18 V, TA = 25°C
–5
–
–
mA
[1] Typical
data is at TA = 25°C and VCC = 12 V unless otherwise noted.
Measured from VCC ≥ 3.3 V to valid output.
[3] See Undervoltage Lockout section for operational characteristics.
[4] Guaranteed by device design and characterization.
[5] See Power-On Behavior section and Figure 4.
[6] C = oscilloscope probe capacitance.
L
[7] See Figure 2 - Definition of Output Rise and Fall Time.
[2]
VOUT(OFF)
90%
VOUT
90%
VOUT(SAT)
10%
tf
10%
tr
t
Figure 2: Definition of Output Rise and Fall Time
Allegro MicroSystems
955 Perimeter Road
Manchester, NH 03103-3353 U.S.A.
www.allegromicro.com
6
APS11000 and
APS11060
Vertical and Planar Hall-Effect Switches
MAGNETIC CHARACTERISTICS: Valid over full operating voltage and ambient temperature ranges for TJ < TJ(max) and
CBYP = 0.1 µF, unless otherwise specified
Characteristics
Symbol
Test Conditions
Min.
Typ. [1]
Max.
Unit [2]
-0Px OPTION
Operate Point
BOPS
-0Px Option
–
35
70
G
BOPN
-0Px Option
–70
–35
–
G
BRPS
-0Px Option
5
25
–
G
BRPN
-0Px Option
–
–25
–5
G
BHYS
-0Px Option
5
15
25
G
Operate Point
BOPS
-0Sx Option
‒
35
70
G
Release Point
BRPS
-0Sx Option
5
25
‒
G
Hysteresis
BHYS
-0Sx Option
5
15
25
G
Operate Point
BOPN
-0Nx Option
‒70
‒35
‒
G
Release Point
BRPN
-0Nx Option
‒
‒25
‒5
G
Hysteresis
BHYS
-0Nx Option
5
15
25
G
Release Point
Hysteresis
-0Sx OPTION
-0Nx OPTION
[1] Typical
data are at TA = 25°C and VCC = 12 V unless otherwise noted.
Magnetic flux density, B, is indicated as a negative value for north-polarity magnetic fields, and a positive value for south-polarity magnetic fields.
BRPN
Switch to Off
BOPS
BRPN
VOUT(SAT)
VOUT(SAT)
Switch to Off
VOUT(OFF)
B-
B+
BHYS
BRPN
BRPN
Switch to Off
BHYS
0
VOUT(OFF)
BOPN
B-
Switch to On
VOUT(SAT)
Unipolar North
“-xNH”
BRPS
BOPS
Switch to On
Switch to On
VOUT(SAT)
0
V+
VOUT
VOUT(OFF)
0
Switch to On
VOUT(OFF)
V+
BHYS
Switch to Off
Switch to On
B-
BOPN
BOPS
VOUT
VOUT(SAT)
BHYS
Switch to On
BHYS
B+
VOUT(SAT)
B+
Omnipolar
“-xPH”
BOPN
0
BRPS
0
BRPS
Unipolar South
“-xSH”
Switch to Off
Inverted
Output
Polarity
0
BHYS
BHYS
V+
Switch to Off
B-
VOUT(OFF)
VOUT
VOUT(SAT)
VOUT(OFF)
Switch to Off
VOUT(SAT)
B+
Unipolar North
“-xNL”
Switch to On
VOUT(OFF)
BOPN
0
BRPS
0
VOUT(OFF)
Switch to On
Standard
Output
Polarity
Switch to Off
V+
Omnipolar
“-xPL”
BOPS
Unipolar South
“-xSL”
VOUT
[2]
0
0
BHYS
Figure 3: Hall Switch Output State vs. Magnetic Field
B- indicates increasing north polarity magnetic field strength, and B+ indicates increasing south polarity magnetic field strength.
Allegro MicroSystems
955 Perimeter Road
Manchester, NH 03103-3353 U.S.A.
www.allegromicro.com
7
APS11000 and
APS11060
Vertical and Planar Hall-Effect Switches
MAGNETIC CHARACTERISTICS (continued): Valid over full operating voltage and ambient temperature ranges for TJ < TJ(max)
and CBYP = 0.1 µF, unless otherwise specified
Characteristics
Symbol
Test Conditions
Min.
Typ. [1]
Max.
Unit [2]
-1Px OPTION [3]
Operate Point
BOPS
-1Px Option
50
95
135
G
BOPN
-1Px Option
‒135
‒95
‒50
G
BRPS
-1Px Option
40
70
110
G
BRPN
-1Px Option
‒110
‒70
‒40
G
BHYS
-1Px Option
10
25
42
G
Operate Point
BOPS
-1Sx Option
50
95
135
G
Release Point
BRPS
-1Sx Option
40
70
110
G
Hysteresis
BHYS
-1Sx Option
10
25
42
G
Operate Point
BOPN
-1Nx Option
‒135
‒95
‒50
G
Release Point
BRPN
-1Nx Option
‒110
‒70
‒40
G
Hysteresis
BHYS
-1Nx Option
10
25
42
G
BOPS
-2Px Option
120
150
200
G
BOPN
-2Px Option
‒200
‒150
‒120
G
BRPS
-2Px Option
110
125
190
G
BRPN
-2Px Option
‒190
‒125
‒110
G
BHYS
-2Px Option
10
25
42
G
Operate Point
BOPS
-2Sx Option
120
150
200
G
Release Point
BRPS
-2Sx Option
110
125
190
G
Hysteresis
BHYS
-2Sx Option
10
25
42
G
Operate Point
BOPN
-2Nx Option
‒200
‒150
‒120
G
Release Point
BRPN
-2Nx Option
‒190
‒125
‒110
G
Hysteresis
BHYS
-2Nx Option
10
25
42
G
Release Point
Hysteresis
-1Sx OPTION [3]
-1Nx OPTION [3]
-2Px OPTION
[3]
Operate Point
Release Point
Hysteresis
-2Sx OPTION
[3]
-2Nx OPTION [3]
[1] Typical
data are at TA = 25°C and VCC = 12 V unless otherwise noted.
Magnetic flux density, B, is indicated as a negative value for north-polarity magnetic fields, and a positive value for south-polarity magnetic fields.
[3] Contact Allegro MicroSystems for availability.
[2]
Allegro MicroSystems
955 Perimeter Road
Manchester, NH 03103-3353 U.S.A.
www.allegromicro.com
8
APS11000 and
APS11060
Vertical and Planar Hall-Effect Switches
PACKAGE THERMAL CHARACTERISTICS: May require derating at maximum conditions; see application information.
Characteristic
Symbol
Test Conditions
RθJA
Package Thermal Resistance
Value
Units
Package LH, 1-layer PCB with copper limited to solder pads
228
°C/W
Package LH, 2-layer PCB with 0.463 in.2 of copper area each side
connected by thermal vias
110
°C/W
Package UA, 1-layer PCB with copper limited to solder pads
165
°C/W
Power Derating Curve
Maximum Allowable VCC (V)
TJ(m ax) = 165°C; ICC = ICC(m ax), IOUT = 0 mA (Output Off)
25
24
23
22
21
20
19
18
17
16
15
14
13
12
11
10
9
8
7
6
5
4
3
2
VCC(max)
Package LH, 2-layer PCB
(RθJA = 110°C/W)
Package UA, 1-layer PCB
(RθJA = 165°C/W)
Package LH, 1-layer PCB
(RθJA = 228°C/W)
VCC(min)
25
45
65
85 105 125 145
Temperature (°C)
165
TJ(max)
185
Power Dissipation, PD (mW)
Power Dissipation versus Ambient Temperature
1900
1800
1700
1600
1500
1400
1300
1200
1100
1000
900
800
700
600
500
400
300
200
100
0
Package LH, 2-layer PCB
(RθJA = 110°C/W)
Package UA, 1-layer PCB
(RθJA = 165°C/W)
Package LH, 1-layer PCB
(RθJA = 228°C/W)
25
45
65
85
105
125
145
165
185
Temperature (°C)
Allegro MicroSystems
955 Perimeter Road
Manchester, NH 03103-3353 U.S.A.
www.allegromicro.com
9
Average
Supply
Current
versus
Ambient
Temperature
Average
Supply
Current
versus
Ambient
Temperature
(Output
Off)Off)
(Output
Average
Supply
Current
versus
Supply
Voltage
Average
Supply
Current
versus
Supply
Voltage
(Output
Off)Off)
(Output
APS11000 and
APS11060
40 40
Vertical and Planar Hall-Effect Switches
35 35
35 35
TAA (°C)
TA (°C)
IICC
(µA)
CC (µA)
ICC (µA)
25 25
-40 -40
20 20
25 25
15 15
150 150
10 10
5
0
0
ttPERIOD
(ms)
PERIOD (ms)
ICC
(mA)(ms)
tPERIOD
220
200
180
160
140
120
100
80
60
40
20
0
2
2
6
6
10 10
14 14
VCC V
(V)
CC (V)
-40 -40
25
25 25
150
APS11060
150 150
-40
25
10 10
10
14 14
18 18
18
(V)14(V)
V
V CC
CC
VCC (V)
22 22
22
26 26
26
150
Average
Output
Saturation
Voltage
versus
Supply
Voltage
Average
Output
Saturation
Voltage
versus
Supply
Voltage
for Ifor
5 mA
= 5 mA
OUTI=
OUT
OUT
VVOUT(SAT)
(mV)
OUT(SAT) (mV)
VOUT(SAT) (mV)
350 350
300 300
250 250
TAA (°C)
TA (°C)
-40 -40
25 25
200 200
150 150
100 100
150 150
6
6
10 10
14 14
VCC V
(V)
CC (V)
100 100
120 120
140 140
160 160
6080 80
18 18
22 22
26 26
220
200
180
160
140
120
100
80
60
40
20
0
220
5
200
4.5
180
4
160
3.5
140
1203
100
2.5
802
60
1.5
40
1
20
0.5
0
-60 0-60
-40 -40
-20 -200
-60 -40 -20
VCC (V)
APS11000
VCC
VCC (V)3.3
CC (V)
3.3 3.3
12
12 1224
APS11060
24 24
3.3
12
100 100
120 120
140 140
160 160
020 2040 4060 6080 80
0
20
40
60
80
100 120 140 160
24
TA (°C)
TA (°C)
TA (°C)
Average
Output
Saturation
Voltage
versus
Ambient
Average
Output
Saturation
Voltage
versus
Ambient
Temperature
for Ifor
5 mA
= 5 mA
Temperature
OUTI=
OUT
OUT
500 500
450 450
400 400
50 50
0
0
2
2
24 24
10 10
Supply
Current
versus
Ambient
Temperature
Average
Sleep
Mode
Period
versus
Ambient
Temperature
Average
Sleep
Mode
Period
versus
Ambient
Temperature
(Output Off)
TA (°C)
APS11000
TAA (°C)
TA (°C)
-40
6
6
12 12
15 15
TA (°C)
TA (°C)
Supply
Current
versus
Supply
Voltage
Average
Sleep
Mode
Period
versus
Supply
Voltage
Average
Sleep
Mode
Period
versus
Supply
Voltage
(Output Off)
6
3.3 3.3
20 20
5
5
CHARACTERISTIC PERFORMANCE
DATA
0
0
Characteristics
18 18
22 22 Electrical
26 26
-60 -60
-40 -40
-20 -200
020 2040 4060
220
5
200
4.5
180
1604
3.5
140
1203
100
2.5
802
60
1.5
40
1
20
0.5
0
2 0 2
2
VCC
VCC (V)
CC (V)
25 25
ttPERIOD
(ms)
PERIOD (ms)
tIPERIOD
(ms)
CC (mA)
5
30 30
IICC
(µA)
CC (µA)
ICC (µA)
30 30
500 500
450 450
400 400
VVOUT(SAT)
(mV)
OUT(SAT) (mV)
VOUT(SAT) (mV)
40 40
VCC
VCC (V)
CC (V)
350 350
300 300
250 250
3.3 3.3
12 12
200 200
150 150
100 100
50 50
0
0
-60 -60
-40 -40
-20 -200
24 24
100 100
120 120
140 140
160 160
020 2040 4060 6080 80
TA (°C)
TA (°C)
Allegro MicroSystems
955 Perimeter Road
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10
APS11000 and
APS11060
Vertical and Planar Hall-Effect Switches
CHARACTERISTIC PERFORMANCE DATA
Magnetic Characteristics
Average Operate Point versus Ambient Temperature
Average Operate Point versus Supply Voltage
70
TA (°C)
BOPS
50
25
10
150
BOPN
-10
-30
-40
-50
25
-70
150
2
4
6
8
10
12
14
VCC (V)
16
18
20
22
24
-30
3.3
-50
12
-70
30
0
150
BRPN
-10
-20
-40
VCC (V)
18
20
22
24
TA (°C)
80
100
120
140
160
3.3
12
24
0
BRPN
-10
3.3
12
-40
-50
24
VCC (V)
BRPS
10
26
-60
Average Hysteresis versus Supply Voltage
-40
-20
0
20
40
60
TA (°C)
80
100
120
140
160
24
Average Hysteresis versus Ambient Temperature
25
20
22.5
25
150
15
BHYS(N)
12.5
BHYS (G)
-40
17.5
VCC (V)
BHYS(S)
25
TA (°C)
BHYS(S)
22.5
BHYS (G)
60
-30
150
16
40
-20
25
14
20
20
-40
-30
12
0
30
BRP (G)
BRP (G)
10
25
10
-20
40
-40
20
8
-40
Average Release Point versus Ambient Temperature
40
6
-60
50
TA (°C)
BRPS
4
24
BOPN
-10
Average Release Point versus Supply Voltage
2
12
10
26
50
-50
3.3
30
BOP (G)
BOP (G)
50
-40
30
VCC (V)
BOPS
70
20
3.3
17.5
12
24
15
BHYS(N)
12.5
10
-40
10
3.3
7.5
25
7.5
12
5
150
2
4
6
8
10
12
14
VCC (V)
16
18
20
22
24
26
5
-60
-40
-20
0
20
40
60
TA (°C)
80
100
120
140
160
Allegro MicroSystems
955 Perimeter Road
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24
11
APS11000 and
APS11060
Vertical and Planar Hall-Effect Switches
FUNCTIONAL DESCRIPTION
Power-On Behavior
Undervoltage Lockout Operation
Device power-on begins when the supply voltage reaches
VCC(min). During the power-on time, tPO, the device output is off
with the exception of the leakage current, IOUTOFF(PO). Use of a
large pull-up resistor, RPULL-UP (see Figure 6), can influence the
Power-On State (POS) voltage level on the output pin during tON.
The output voltage level during the POS is a function of the pullup resistor and pull-up voltage. The level can be determined by
subtracting the voltage drop created by RPULL-UP and IOUTOFF(PO)
from the pull-up voltage. To retain a power-on output voltage
level above VPULL-UP/2, a pull-up resistor less than or equal to
20 kΩ is recommended. After power-on is complete and the
power-on time has elapsed, the device output will correspond with
the applied magnetic field for B > BOP and B < BRP. Powering-on
the device in the hysteresis range (less than BOP and higher than
BRP) will cause the device output to remain off. A valid output
state is attained after the first excursion beyond BOP or BRP.
The APS11000 and APS11060 have an internal diagnostic to
check the voltage supply (an undervoltage lockout regulator).
When the supply voltage falls below the undervoltage lockout
voltage threshold, VCC(UV)EN, the device enters reset, where
the output state returns to the Power-On State (POS) until VCC
is increased to VCC(UV)DIS. Once the VCC(UV)DIS threshold is
reached, the power-on sequence begins and the output will correspond with the applied magnetic field for B > BOP and B < BRP
after tPOR has elapsed. In the case the supply voltage does not
return to these operational levels, or if the applied magnetic field
is within the hysteresis range, the output will remain in the poweron state. See Figure 4 for an example of the undervoltage lockout
behavior.
VPULL-UP (V)
Supply
Voltage
VCC (min)
VCC(UV)DIS
VCC(UV)EN
Power-Off
0
tPO
External
Supply Glitch
POS
POS
High
Output State,
“L” Polarity
Low
Output State
Undefined for
VCC < VCC (min)
Output State,
“H” Polarity
Low
Output State
Undefined for
VCC < VCC (min)
POS
B > BOP
B < BOP
POS
POS
High
Key
UVLO Enabled
Key
POS
B > BOP, BRP < B < BOP
B < BRP
UVLO Enabled
RLOAD (kΩ)
1
2.4
4.8
3.3
7.2
9.6
12
14.4
1
2.4
4.8
12
7.2
9.6
12
14.4
1
2.4
4.8
24
7.2
9.6
12
14.4
*VCC ≥ VCC(min) and t < tPO
Figure 4: Power-On and Undervoltage Lockout Behavior
Allegro MicroSystems
955 Perimeter Road
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12
VOUT du
POS (
3.2
3.1
2.9
2.7
2.5
2.3
2.1
11.9
11.8
11.6
11.4
11.2
11.0
10.8
23.9
23.8
23.6
23.4
23.2
23.0
22.8
APS11000 and
APS11060
Functional Safety
Vertical and Planar Hall-Effect Switches
2
-
The APS11000 and APS11060 were designed
in
accordance with the international standard for
automotive functional safety, ISO 26262:2011.
These products achieve an ASIL (Automotive Safety Integrity
Level) rating of ASIL A (pending confirmation) according to the
standard. The APS11000 and APS11060 are both classified as a
SEooC (Safety Element out of Context) and can be easily integrated into safety-critical systems requiring higher ASIL ratings
that incorporate external diagnostics or use measures such as redundancy. Safety documentation will be provided to support and guide
the integration process. For further information, contact your local
FAE for A2-SIL™ documentation: www.allegromicro.com/ASIL.
Operation
The APS11000 and APS11060 are integrated Hall-effect sensor
ICs with an open-drain output. Table 1 offers a guide for selecting the output polarity configuration, further explained in the
configuration sections below. The open-drain output is an NMOS
transistor that actuates in response to a magnetic field. The direction of the applied magnetic field is perpendicular to the branded
face for the APS11000, and parallel with the branded face for
the APS11060; see Figure 5 for an illustration. The devices are
offered in two packages: the UA package, a 3-pin through-hole
mounting configuration, or in the LH package, a 3-pin surfacemount configuration. See the Selection Guide for a complete list
of available options.
Configurations xSL and xSH. The unipolar output of these
devices is actuated when a south-polarity magnetic field perpendicular to the Hall element exceeds the operate point threshold,
BOPS. When BOPS is exceeded, the xSL output turns on (goes
low). The xSH is complementary, in that for this device the output
turns off (goes high) when BOPS is exceeded. When the magnetic
field is removed or reduced below the release point, BRPS, the
device outputs return to their original state—off for the xSL and
on for the xSH. See Figure 3 for unipolar south switching behavior.
Table 1: Switch Polarity Configuration Options
Part
Number
Suffix
Operating
Mode
xPL
Unipolar
South
Unipolar
South
Unipolar
North
Unipolar
North
Omnipolar
xPH
Omnipolar
xSL
xSH
xNL
xNH
Output
State for
B > BOP
Output
State for
B=0G
Power-On
State,
t < tPO
Low
High
High
High
Low
High
Low
High
High
High
Low
High
Low
High
High
High
Low
High
Configurations xPL and xPH. The omnipolar operation of these
devices allows actuation with either a north or a south polarity
field. The xPL operates using the standard output polarity convention. Fields exceeding the operating points, BOPS or BOPN, will turn
the output on (low). When the magnetic field is removed or reduced
below the release point, BRPN or BRPS, the device output turns off
(goes high). The xPH is complementary, in that for the device, a
north or south polarity field exceeding the operate points, BOPS
or BOPN, will turn the output off (high). Removal of the field, or
reduction below the release point threshold, BRPS or BRPN, will turn
the output on (low). See Figure 3 for omnipolar switching behavior.
After turn-on, the output transistor is capable of sinking current
up to the short circuit current limit, IOM, which is a minimum of
15 mA. The difference in the magnetic operate and release points
is the hysteresis, BHYS, of the device. This built-in hysteresis
allows clean switching of the output even in the presence of external mechanical vibration and electrical noise.
Configurations xNL and xNH. The unipolar output of these
devices is actuated when a north-polarity magnetic field perpendicular to the Hall element exceeds the operate point threshold,
BOPN. When BOPN is exceeded, the xNL output turns on (goes low).
The xNH is complementary, in that for this device the output turns
off (goes high) when BOPN is exceeded. When the magnetic field
is removed or reduced below the release point, BRPN, the device
outputs return to their original state—off for the xNL and on for the
xNH. See Figure 3 for unipolar north switching behavior.
Figure 5: Magnetic Sensing Orientations
APS11000 LH (Panel A), APS11000 UA (Panel B),
APS11060 LH (Panel C), and APS11060 UA (Panel D)
Allegro MicroSystems
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13
APS11000 and
APS11060
Vertical and Planar Hall-Effect Switches
Applications
It is strongly recommended that an external bypass capacitor be
connected (in close proximity to the Hall element) between the
supply and ground of the device to guarantee correct performance
under harsh environmental conditions and to reduce noise from
internal circuitry. As is shown in Figure 6: Typical and Enhanced
Protection Application Circuits, a 0.1 µF capacitor is required.
Extensive applications information for Hall-effect devices is
available in:
• Hall-Effect IC Applications Guide, AN27701,
• Hall-Effect Devices: Guidelines for Designing Subassemblies
Using Hall-Effect Devices AN27703.1
• Soldering Methods for Allegro’s Products – SMD and ThroughIn applications where the APS11000 or APS11060 receives
Hole, AN26009
its power from an unregulated source such as a car battery, or
where greater immunity is required, additional measures may
All are provided on the Allegro website:
be employed. Specifications for such transients will vary, so
www.allegromicro.com
protection circuit design should be optimized for each application.
For example, the circuit shown in Figure 6 includes an optional
series resistor and output capacitor which improves performance
during Powered ESD testing (ISO 10605) and Bulk Current
Injection testing (ISO 11452-4).
Vertical Hall-Effect Sensor Linear Tools
Typical Applications Circuit
System design and magnetic sensor evaluation often require
an in-depth look at the overall strength and profile generated by a magnetic field input. To aid in this evaluation,
Allegro MicroSystems, LLC provides a high-accuracy linear
output tool capable of reporting the nonperpendicular magnetic
field by means of an vertical Hall-effect sensor IC equipped with
a calibrated analog output. For further information, contact your
local Allegro field applications engineer or sales representative.
VSUPPLY
RPULL-UP
4.8 kΩ
APS110xx
1
VCC
CBYP
0.1 µF
VOUT
2
VOUT
GND
3
Enhanced Protection Circuit
VPULL-UP
VSUPPLY
RS
100 Ω
CBYP
0.1 µF
RPULL-UP
4.8 kΩ
APS110xx
1
VCC
VOUT
2
GND
3
VOUT
COUT
4.7 nF
Figure 6: Typical and Enhanced
Protection Application Circuits
Recommended RPULL-UP ≤ 20 kΩ.
See Power-On Behavior section.
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14
APS11000 and
APS11060
Vertical and Planar Hall-Effect Switches
CHOPPER STABILIZATION
A limiting factor for switchpoint accuracy when using Hall-effect
technology is the small signal voltage developed across the Hall
plate. This voltage is proportionally small relative to the offset
that can be produced at the output of the Hall sensor. This makes
it difficult to process the signal and maintain an accurate, reliable
output over the specified temperature and voltage range. Chopper
stabilization is a proven approach used to minimize Hall offset.
The technique, dynamic quadrature offset cancellation, removes
key sources of the output drift induced by temperature and package stress. This offset reduction technique is based on a signal
modulation-demodulation process. Figure 7: Model of Chopper
Stabilization Circuit (Dynamic Offset Cancellation) illustrates
how it is implemented.
The undesired offset signal is separated from the magnetically
induced signal in the frequency domain through modulation. The
subsequent demodulation acts as a modulation process for the
offset causing the magnetically induced signal to recover its
original spectrum at baseband while the DC offset becomes a
high-frequency signal. Then, using a low-pass filter, the signal
passes while the modulated DC offset is suppressed. Allegro’s
innovative chopper-stabilization technique uses a high-frequency
clock.
The high-frequency operation allows a greater sampling rate
that produces higher accuracy, reduced jitter, and faster signal
processing. Additionally, filtering is more effective and results
in a lower noise analog signal at the sensor output. Devices such
as the APS11000 and APS11060 that use this approach have an
extremely stable quiescent Hall output voltage, are immune to
thermal stress, and have precise recoverability after temperature
cycling. This technique is made possible through the use of a
BiCMOS process which allows the use of low offset and low
noise amplifiers in combination with high-density logic and
sample-and-hold circuits.
Regulator
Hall Element
Amp
Sample and
Hold
Clock/Logic
Low-Pass
Filter
Figure 7: Model of Chopper Stabilization Circuit
(Dynamic Offset Cancellation)
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15
APS11000 and
APS11060
Vertical and Planar Hall-Effect Switches
POWER DERATING
The device must be operated below the maximum junction temThis provides the allowable increase to TJ resulting from internal
perature, TJ(max). Reliable operation may require derating supplied power dissipation. Then, using equation 2 first for the output as
power and/or improving the heat dissipation properties of the
shown below:
application.
PD(VOUT) = VOUT × IOUT = 500 mV × 20 mA = 10 mW
Thermal Resistance, RθJA (junction to ambient), is a figure of
merit summarizing the ability of the application and the device to
dissipate heat from the junction (die), through all paths to ambient
air. RθJA is dominated by the Effective Thermal Conductivity,
K, of the printed circuit board which includes adjacent devices
and board layout. Thermal resistance from the die junction to
case, RθJC, is a relatively small component of RθJA. Ambient air
temperature, TA, and air motion are significant external factors in
determining a reliable thermal operating point.
Then, for the VCC supply:
PD(VCC) = VCC × ICC = 24 V × 5 mA = 120 mW
Combine the power dissipated by the device pins:
PD(total) = (PD(VOUT) + PD(VCC))
PD(total) = (10 mW + 120 mW) = 130 mW
Next, solve for the maximum allowable VCC for the given conditions using equation 1:
VCC(est) = PD(total) ÷ (ICC + IOUT)
130 mW ÷ (5 mA + 20 mA)
VCC(est) =130 mW ÷ 25 mA = 5.2 V
The following three equations can be used to determine operation
points for given power and thermal conditions:
PD = VIN × IIN (1)
ΔT = PD × RθJA (2)
TJ = TA + ΔT (3)
Determining Junction Temperature
For example, given common conditions: TA = 25°C, VCC = 12 V,
ICC = 2.5 mA, VOUT(SAT) = 100 mV, IOUT = 5 mA, and RθJA =
165°C/W, then:
PD = (VCC × ICC) + (VOUT × IOUT) =
(12 V × 2.5 mA) + (100 mV × 5 mA) =
30 mW + 0.5 mW = 30.5 mW
ΔT = PD × RθJA = 30.5 mW × 165°C/W = 5°C
TJ = TA + ΔT = 25°C + 5°C = 30°C
The result indicates that, at TA, the application and device can dissipate adequate amounts of heat at voltages ≤ VCC(est).
If the application requires VCC > VCC(est) then RθJA must by
improved. This can be accomplished by adjusting the layout, PCB
materials, or by controlling the ambient temperature.
Determining Maximum TA
In cases where the VCC(max) level is known, and the system
designer would like to determine the maximum allowable ambient
temperature, TA(max), the calculations can be reversed.
For example, in a worst-case scenario with conditions VCC(max) =
24 V, ICC(max) = 5 mA, VOUT = 500 mV, IOUT(max) = 15 mA, and
RθJA = 228°C/W, for the LH package using equation 1, the largest
possible amount of dissipated power is:
PD = VIN × IIN
Determining Maximum VCC
PD = PD(VOUT) + PD(VCC) = 500 mV × 15 mA + 24 V × 5 mA
For a given ambient temperature (TA), the maximum allowable
PD = 7.5 mW + 120 mW = 127.5 mW
power dissipation as a function of VCC can be calculated. PD(max),
represents the maximum allowable power level without exceeding Then, by rearranging equation 3:
TJ(max), at a selected RθJA and TA.
TA(max) = TJ(max) – ΔT
Example: VCC estimation using the conditions RθJA = 228°C/W,
TA(max) = 165°C – (127.5 mW × 228°C/W)
TA(max) = 150°C, TJ(max) = 165°C, VCC(max) = 24 V, ICC(max) =
TA(max) = 165°C – 29.1°C = 135.9°C
5 mA, VOUT = 500 mV, and IOUT = 20 mA (output on), calculate
the maximum allowable power level, PD(max), first using equaFinally, note that the TA(max) rating of the device is 150°C and
tion 3:
performance is not guaranteed above this temperature for any
ΔT(max) = TJ(max) – TA = 165°C – 150°C = 15°C
power level.
Allegro MicroSystems
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16
APS11000 and
APS11060
Vertical and Planar Hall-Effect Switches
Package LH, 3-Pin SMD (SOT23W)
APS11000
+0.12
2.98 –0.08
1.49 D
4°±4°
3
A
+0.020
0.180–0.053
0.96 D
+0.10
2.90 –0.20
+0.19
1.91 –0.06
2.40
0.70
D
0.25 MIN
1.00
2
1
0.55 REF
0.25 BSC
0.95
Seating Plane
Gauge Plane
8X 10° REF
B
PCB Layout Reference View
Branded Face
1.00 ±0.13
0.95 BSC
0.40 ±0.10
For Reference Only; not for tooling use (reference DWG-2840)
Dimensions in millimeters
Dimensions exclusive of mold flash, gate burrs, and dambar protrusions
Exact case and lead configuration at supplier discretion within limits shown
A
Active Area Depth, 0.28 mm REF
B
Reference land pattern layout
All pads a minimum of 0.20 mm from all adjacent pads; adjust as necessary
to meet application process requirements and PCB layout tolerances
C
Branding scale and appearance at supplier discretion
D
Hall element, not to scale
AAH
+0.10
0.05 –0.05
1
C
Standard Branding Reference View
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17
APS11000 and
APS11060
Vertical and Planar Hall-Effect Switches
Package LH, 3-Pin SMD (SOT23W)
APS11060
+0.12
2.98 –0.08
4°±4°
3
+0.020
0.180–0.053
0.96 D
+0.10
2.90 –0.20
+0.19
1.91 –0.06
2.40
0.70
D
0.25 MIN
1.00
2
1
0.55 REF
A
0.25 BSC
0.95
Seating Plane
Gauge Plane
8X 10° REF
B
PCB Layout Reference View
Branded Face
1.00 ±0.13
0.95 BSC
A44
+0.10
0.05 –0.05
0.40 ±0.10
For Reference Only; not for tooling use (reference DWG-2840)
Dimensions in millimeters
Dimensions exclusive of mold flash, gate burrs, and dambar protrusions
Exact case and lead configuration at supplier discretion within limits shown
A
Active Area Depth, 1.32 mm
B
Reference land pattern layout
All pads a minimum of 0.20 mm from all adjacent pads; adjust as necessary
to meet application process requirements and PCB layout tolerances
C
Branding scale and appearance at supplier discretion
D
Hall element, not to scale
1
C
Standard Branding Reference View
Allegro MicroSystems
955 Perimeter Road
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18
APS11000 and
APS11060
Vertical and Planar Hall-Effect Switches
Package UA, 3-Pin SIP
APS11000
+0.08
4.09 –0.05
45°
B
E
C
2.04
1.52 ±0.05
+0.08
3.02 –0.05
1.44
E
10°
Mold Ejector
Pin Indent
E
Branded
Face
A
1.02
MAX
45°
0.79 REF
AAH
1
1
2
D Standard Branding Reference View
3
+0.03
0.41 –0.06
14.99 ±0.25
+0.05
0.43 –0.07
For Reference Only; not for tooling use (reference DWG-9065)
Dimensions in millimeters
Dimensions exclusive of mold flash, gate burrs, and dambar protrusions
Exact case and lead configuration at supplier discretion within limits shown
A
Dambar removal protrusion (6X)
B
Gate and tie bar burr area
C
Active Area Depth, 0.50 mm REF
D
Branding scale and appearance at supplier discretion
E
Hall element (not to scale)
1.27 NOM
Allegro MicroSystems
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19
APS11000 and
APS11060
Vertical and Planar Hall-Effect Switches
Package UA, 3-Pin SIP
APS11060
+0.08
4.09 –0.05
45°
B
E
2.04
1.52 ±0.05
+0.08
3.02 –0.05
C
E
10°
Mold Ejector
Pin Indent
Branded
Face
A
1.02
MAX
45°
0.79 REF
A44
1
1
2
D Standard Branding Reference View
3
+0.03
0.41 –0.06
14.99 ±0.25
+0.05
0.43 –0.07
For Reference Only; not for tooling use (reference DWG-9065)
Dimensions in millimeters
Dimensions exclusive of mold flash, gate burrs, and dambar protrusions
Exact case and lead configuration at supplier discretion within limits shown
A
Dambar removal protrusion (6X)
B
Gate and tie bar burr area
C
Active Area Depth, 1.27 mm
D
Branding scale and appearance at supplier discretion
E
Hall element (not to scale)
1.27 NOM
Allegro MicroSystems
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20
APS11000 and
APS11060
Vertical and Planar Hall-Effect Switches
Revision History
Number
Date
Description
–
March 15, 2018
Initial release
1
July 16, 2018
2
October 22, 2018
Updated TJ(max) to 165°C, Selection Guide (page 3), Absolute Maximum Ratings footnotes (page 4), PowerOn State (page 6), Magnetic Characteristics table (page 8), Package Thermal Characteristics (page 9),
Magnetic Characteristic Performance chart labels (page 11), and Power Derating section (page 16).
3
February 7, 2020
Minor editorial updates
4
May 12, 2020
Added APS11000 part option; updated Magnetic Characteristics tables; other minor editorial updates
Added “(pending confirmation)” to ASIL references.
Copyright 2020, Allegro MicroSystems.
Allegro MicroSystems reserves the right to make, from time to time, such departures from the detail specifications as may be required to permit
improvements in the performance, reliability, or manufacturability of its products. Before placing an order, the user is cautioned to verify that the
information being relied upon is current.
Allegro’s products are not to be used in any devices or systems, including but not limited to life support devices or systems, in which a failure of
Allegro’s product can reasonably be expected to cause bodily harm.
The information included herein is believed to be accurate and reliable. However, Allegro MicroSystems assumes no responsibility for its use; nor
for any infringement of patents or other rights of third parties which may result from its use.
Copies of this document are considered uncontrolled documents.
For the latest version of this document, visit our website:
www.allegromicro.com
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