SI-3012KD

1-1-1 Linear Regulator ICs SI-3000KD Series ■Features Surface-Mount, Low Current Consumption, Low Dropout Voltage Linear Regulator ICs ■Absolute Maximum Ratings Parameter DC Input Voltage DC Output Current Power Dissipation Junction Temperature Storage Temperature Thermal Resistance (Junction to Ambient Air) Thermal Resistance (Junction to Case) Symbol Ratings SI-3012KD/3033KD 17 1.0 3 –30 to +125 –30 to +125 33.3 3 SI-3010KD/3050KD 35*1 (Ta=25°C) Unit • Compact surface-mount package (TO263-5) • Output current: 1.0A • Low dropout voltage: VDIF ≤ 0.6V (at IO = 1.0A) • Low circuit current consumption: Iq ≤ 350 µA (600 µA for SI-3010KD, SI-3050KD • Low circuit current at output OFF: Iq (OFF) ≤ 1 µA • Built-in overcurrent, thermal protection circuits • Compatible with low ESR capacitors (SI-3012KD and SI-3033KD) VIN IO PD*2 Tj Tstg θ j-a θ j-c V A W °C °C °C/W °C/W *1: A built-in input-overvoltage-protection circuit shuts down the output voltage at the Input Overvoltage Shutdown Voltage of the electrical characteristics. *2: When mounted on glass-epoxy board of 1600mm2 (copper laminate area 100%). ■Applications • Secondary stabilized power supply (local power supply) ■Electrical Characteristics 1 (Low VO type compatible with low ESR output capacitor) Ratings (Ta=25°C, VC=2V unless otherwise specified) SI-3033KD Unit max. *4 Parameter Input Voltage Output Voltage (Reference Voltage for SI-3012KD) Line Regulation Load Regulation Symbol min. VIN VO (VADJ) Conditions ∆VOLINE Conditions ∆VOLOAD Conditions VDIF Conditions Conditions 2.4*3 1.24 SI-3012KD (Variable type) typ. 1.28 VIN=3.3V, IO=10mA 15 VIN=3.3 to 8V, IO=10mA (VO=2.5V) 40 VIN=3.3V, IO=0 to 1A (VO=2.5V) 0.4 IO=0.5A (VO=2.5V) 0.6 IO=1A (VO=2.5V) 350 VIN=3.3V, IO=0A, VC=2V, R2=2.4kΩ 1 VIN=3.3V, VC=0V ± 0.3 Tj=0 to 100°C (VO=2.5V) 55 VIN=3.3V, f=100 to 120HZ, IO=0.1A (VO=2.5V) 1.1 VIN=3.3V 2 0.8 40 VC=2V –5 0 VC=0V –5 2 1.1 max. *4 min. *3 typ. 3.300 VIN=5V, IO=10mA V V mV mV 1.32 3.234 3.366 15 VIN=5 to 10V, IO=10mA 50 VIN=5V, IO=0 to 1A 0.4 IO=0.5A 0.6 IO=1A 350 VIN=5V, IO=0A,VC=2V 1 VIN=5V, VC=0V ± 0.3 Tj=0 to 100°C 55 VIN=5V, f=100 to 120HZ, IO=0.1A VIN=5V 0.8 40 VC=2V 0 VC=0V Dropout Voltage V Quiescent Circuit Current Circuit Current at Output OFF Temperature Coefficient of Output Voltage Ripple Rejection Overcurrent Protection Starting Current*1 Control Voltage (Output VC Terminal ON)*2 Control Voltage (Output OFF) Control Current (Output ON) Control Current (Output OFF) Iq Conditions Iq (OFF) Conditions ∆VO/∆Ta Conditions RREJ Conditions IS1 Conditions VC, IH VC, IL IC, IH Conditions IC, IL Conditions µA µA mV/ °C dB A V µA µA *1: *2: *3: *4: IS1 is specified at the 5% drop point of output voltage VO under the condition of Output Voltage parameter. Output is OFF when the output control terminal (VC terminal) is open. Each input level is equivalent to LS-TTL level. Therefore, the device can be driven directly by LS-TTLs. Refer to the Dropout Voltage parameter. VIN (max) and IO (max) are restricted by the relation PD = (VIN - VO) × IO. Please calculate these values referring to the Copper laminate area vs. Power dissipation data. 20 ICs SI-3000KD Series ■Electrical Characteristics 2 (High VO Type) Ratings Parameter Input Voltage Output Voltage (Reference Voltage VADJ for SI-3010KD) Line Regulation Symbol min. VIN VO (VADJ) Conditions ∆VOLINE Conditions ∆VOLOAD 2.4*1 0.98 SI-3010KD (Variable type) typ. 1.00 VIN=7V, IO=10mA 30 VIN=6 to 11V, IO=10mA (VO=5V) 75 VIN=7V, IO=0 to 1A (VO=5V) 0.3 IO=0.5A (VO=5V) 0.6 IO=1A (VO=5V) 600 VIN=7V, IO=0A, VC=2V R2=10kΩ 1 VIN=7V, VC=0V ± 0.5 Tj=0 to 100°C (VO=5V) 75 VIN=7V, f=100 to 120Hz, IO=0.1A (VO=5V) 1.1 VIN=7V 2.0 0.8 40 VC=2V –5 33 IO=10mA 0 VC=0V 26 –5 2.0 1.1 max. 27*5 1.02 min. *1 SI-3050KD typ. 5.00 VIN=7V, IO=10mA 30 VIN=6 to 11V, IO=10mA 75 VIN=7V, IO=0 to 1A 0.3 IO=0.5A 0.6 IO=1A 600 VIN=7V, IO=0A, VC=2V 1 VIN=7V, VC=0V ± 0.5 Tj=0 to 100°C 75 VIN=7V, f=100 to 120Hz, IO=0.1A VIN=7V 0.8 40 VC=2V 0 VC=0V IO=10mA max. 15*5 5.10 Unit V V 4.90 mV Load Regulation Conditions VDIF mV Dropout Voltage Conditions Conditions Iq V Quiescent Circuit Current Conditions Iq (OFF) Conditions ∆VO/∆Ta Conditions RREJ µA µA mV/ °C dB Circuit Current at Output OFF Temperature Coefficient of Output Voltage Ripple Rejection Overcurrent Protection Starting Current*2 *4 Conditions IS1 Conditions ON)*3 VC, IH VC, IL IC, IH Conditions IC, IL Conditions VOVP Conditions A V Control Voltage (Output VC Terminal Control Voltage (Output OFF)*3 Control Current (Output ON) Control Current (Output OFF) Input Overvoltage Shutdown Voltage µA µA V *1: *2: *3: *4: Refer to the Dropout Voltage parameter. Is1 is specified at the 5% drop point of output voltage VO under the condition of Output Voltage parameter. Output is OFF when the output control terminal (VC terminal) is open. Each input level is equivalent to LS-TTL level. Therefore, the device can be driven directly by LS-TTLs. SI-3010KD, SI-3050KD, cannot be used in the following applications because the built-in foldback-type overcurrent protection may cause errors during start-up stage. (1) Constant current load (2) Positive and negative power supply (3) Series-connected power supply (4) VO adjustment by raising ground voltage *5: VIN (max) and IO (max) are restricted by the relation PD = (VIN - VO) ✕ IO. Please calculate these values referring to the Copper laminate area vs. Power dissipation data as shown hereinafter. ■External Dimensions (TO263-5) Case temperature measurement point (0.40) 1.2 ±0.2 (unit : mm) (15°) ±0.2 10.0 (8.0) 4.5 3-R0.3 ±0.2 (4.4) 1.3 –0.05 +0.10 (1.75) (6.8) ±0.2 9.2± ±0.3 15.3 (3°) ±0.1 0.10 (3°) ±0.15 2.4 (R0.3) ±0.3 ±0.2 ±0.2 2.0 15.30 ±0.3 (0.75) 4.9 0.88 ±0.10 (R0.3) 2.54 0~6° ±0.1 (0.5) (1.7 ±0.25 4.9 ±0.2 9.2 ±0.2 φ1.5 Dp: ±0.2 (3°) (2×R0.45) Pin Assignment q VC w VIN e GND (Common to the rear side of product) r VO t Sense (ADJ for SI-3010KD/3012KD) Plastic Mold Package Type Flammability: UL94V-0 Product Mass: Approx. 1.48g ) 1 2 3 4 9.9 ±0.2 0.8 ±0.25 (1.7 ) 5 (3°) ±0.1 (4.6) (1.7 ±0.25 ) 0.8 ±0.25 (1.7 ) (3°) 2-R0.3 10.0 ±0.02 ICs 21 1-1-1 Linear Regulator ICs ■Block Diagram ●SI-3010KD/SI-3012KD VIN 2 4 VO ●SI-3033KD/SI-3050KD VIN 2 4 Vo 5 VC 1 + 5 ADJ TSD VC 1 + Sense TSD REF 3 GND REF 3 GND ■Typical Connection Diagram ●SI-3033KD/SI-3050KD ● SI-3010KD/SI-3012KD D1*2 *1 D1*2 R3 *3 *1 VIN 2 + VO 4 + VIN 2 + VO 4 R1 + CIN sense VC GND 5 1 3 CO Load CIN VC GND ADJ 1 5 3 CO Load R2 CIN: Input capacitor (22 µF or larger) CO: Output capacitor *1: SI-3012KD/3033KD (22 µF or larger) Co has to be a low ESR capacitor such as a ceramic capacitor. When using the electrolytic capacitor, oscillation may occur at a low temperature. SI-3010KD/3050KD/ (47 µF or larger) If a low ESR capacitor is used, oscillation may occur. *2: D1: Reverse bias protection diode This diode is required for protection against reverse biasing between the input and output. (Sanken SJPL-H2 is recommended.) This diode is not required at VO ≤ 3.3V. R1, R2: Output voltage setting resistors The output voltage can be set by connecting R1 and R2 as shown above. The recommended value for R2 is 10Ω (24kΩ for SI-3012KD). R1=(VO–VADJ)÷(VADJ/R2) *3: For SI-3010KD, insert R3 in case of setting VO to VO ≤ 1.5V. The recommended value for R3 is 10kΩ. ■Reference Data Copper Laminate Area (on Glass-Epoxy Board) vs. Thermal Resistance (from Junction to Ambient Temperature) (Typical Value) 55 Junction to Ambient Temperature Thermal Resistance θ j-a (°C/W) 50 When Using Glass-Epoxy Board of 40 × 40 mm 45 40 35 30 0 • A higher heat radiation effect can be achieved by enlarging the copper laminate area connected to the inner frame to which a monolithic ICs is mounted. • Obtaining the junction temperature Measure the case temperature TC with a thermocouple, etc. Then, substitute this value in the following formula to obtain the junction temperature. Tj=PD × θ j–C + TC ( θ j–C = 3°C/W) PD= (VIN–VO)•IOUT 200 400 600 800 1000 1200 1400 1600 1800 Copper Laminate Area (mm2) 22 ICs