AA022P2-00

21–23 GHz GaAs MMIC Medium Power Amplifier AA022P2-00 Features I Single Bias Supply Operation (6 V) I 22 dBm Typical P1 dB Output Power at 23 GHz I 14 dB Typical Small Signal Gain I 0.25 µm Ti/Pd/Au Gates I 100% On-Wafer RF and DC Testing 0.000 3.400 RF IN 0.850 RF OUT Chip Outline 0.571 1.700 1.572 3.268 1.576 I 100% Visual Inspection to MIL-STD-883 MT 2010 0.000 Description Alpha’s two-stage balanced K band GaAs MMIC power amplifier has a typical P1 dB of 22 dBm with 13 dB associated gain guaranteed across frequency range 21–23 GHz. The chip uses Alpha’s proven 0.25 µm MESFET technology, and is based upon MBE layers and electron beam lithography for the highest uniformity and repeatability. The FETs employ surface passivation to ensure a rugged reliable part with through-substrate via holes and gold-based backside metallization to facilitate a conductive epoxy die attach process. All chips are screened for small signal S-parameters and power characteristics prior to shipment for guaranteed performance. Dimensions indicated in mm. All DC (V) pads are 0.1 x 0.1 mm and RF In, Out pads are 0.07 mm wide. Chip thickness = 0.1 mm. Absolute Maximum Ratings Characteristic Operating Temperature (TC) Storage Temperature (TST) Bias Voltage (VD) Power In (PIN) Junction Temperature (TJ) Value -55°C to +90°C -65°C to +150°C 7 VDC 19 dBm 175°C Electrical Specifications at 25°C (VDS = 6 V) Parameter Drain Current (at Saturation) Small Signal Gain Input Return Loss Output Return Loss Output Power at 1 dB Gain Compression Saturated Output Power Gain at Saturation Thermal Resistance1 1. Calculated value based on measurement of discrete FET. 2. Typical represents the median parameter value across the specified frequency range for the median chip. Condition F = 21–23 GHz F = 21–23 GHz F = 21–23 GHz F = 23 GHz F = 23 GHz F = 23 GHz Symbol IDS G RLI RLO P1 dB PSAT GSAT ΘJC Min. 12 Typ.2 280 14 -8 -9 Max. 300 -6 -7 Unit mA dB dB dB dBm dBm dB °C/W 19 21 22 23.5 11 69 Alpha Industries, Inc. [781] 935-5150 • Fax [617] 824-4579 • Email sales@alphaind.com • www.alphaind.com Specifications subject to change without notice. 12/99A 1 21–23 GHz GaAs MMIC Medium Power Amplifier AA022P2-00 Typical Performance Data 20 15 10 5 S21 Circuit Schematic (dB) 0 -5 -10 -15 -20 S11 S22 Detail A VDS 18 19 20 21 22 23 24 25 26 VDS Frequency (GHz) Typical Small Signal Performance S-Parameters (VDS = 6 V IDS = 240 mA, TA = 25˚C) RF IN See Detail A RF OUT Bias Arrangement 6V 50 pF .01 µF RF IN RF OUT For biasing on, adjust VDS from zero to the desired value (6 V recommended). For biasing off, reverse the biasing on procedure. 2 Alpha Industries, Inc. [781] 935-5150 • Fax [617] 824-4579 • Email sales@alphaind.com • www.alphaind.com Specifications subject to change without notice. 12/99A