AA035N1-00

28–36 GHz GaAs MMIC Low Noise Amplifier AA035N1-00, AA035N2-00 Features s Dual Bias Supply Operation (4.5 V) s 2.8 dB Typical Noise Figure at 32 GHz s 12 dB Typical Small Signal Gain s 0.25 µm Ti/Pd/Au Gates s 100% On-Wafer RF, DC and Noise Figure Testing s 100% Visual Inspection to MIL-STD-883 MT 2010 1.598 Chip Outline 2.370 2.255 0.116 0.000 0.000 0.269 0.627 0.985 1.343 1.701 2.059 2.417 2.690 Description Alpha’s two-stage balanced 28–36 GHz MMIC low noise amplifier has typical small signal gain of 12 dB with a typical noise figure of 2.6 dB at 32 GHz. The chip uses Alpha’s proven 0.25 µm low noise PHEMT technology, and is based upon MBE layers and electron beam lithography for the highest uniformity and repeatability. The FETs employ surface passivation to ensure a rugged, reliable part with through-substrate via holes and gold-based backside metallization to facilitate a conductive epoxy die attach process. Dimensions indicated in mm. All DC (V) pads are 0.1 x 0.1 mm and RF In, Out pads are 0.07 mm wide. Chip thickness = 0.1 mm. AA035N1-00 Electrical Specifications at 25°C (VDS = 4.5 V, ID = 70 mA) Parameter Drain Current Small Signal Gain Noise Figure Input Return Loss Output Return Loss Output Power at 1 dB Gain Thermal Resistance2 Compression1 F = 28–36 GHz F = 32 GHz F = 28–36 GHz F = 28–36 GHz F = 35 GHz Condition Symbol IDS G NF RLI RLO P1 dB ΘJC 10 Min. Typ.3 70 12 2.8 -17 -20 10 50 3.2 -12 -12 Max. 90 Unit mA dB dB dB dB dBm °C/W AA035N2-00 Electrical Specifications at 25°C (VDS = 4.5 V, ID = 70 mA) Parameter Drain Current Small Signal Gain Noise Figure Input Return Loss Output Return Loss Output Power at 1 dB Gain Compression1 Thermal Resistance2 1. Not measured on a 100% basis. 2. Calculated value based on measurement of discrete FET. 3. Typical represents the median parameter value across the specified frequency range for the median chip. Condition F = 28–36 GHz F = 32 GHz F = 28–36 GHz F = 28–36 GHz F = 35 GHz Symbol IDS G NF RLI RLO P1 dB ΘJC Min. 9 Typ.3 70 12 3.0 -17 -20 10 50 Max. 90 3.8 -12 -12 Unit mA dB dB dB dB dBm °C/W Alpha Industries, Inc. [781] 935-5150 • Fax [617] 824-4579 • Email sales@alphaind.com • www.alphaind.com Specifications subject to change without notice. 7/00A 1 28–36 GHz GaAs MMIC Low Noise Amplifier AA035N1-00, AA035N2-00 Typical Performance Data 20 10 0 S21 14 12 10 8 Gain 80 60 Noise Figure 40 20 ID 0 -0.4 -0.3 -0.2 -0.1 0 -10 -20 S22 -30 -40 -50 30 32 34 36 38 40 S12 S11 120 100 Drain Current (mA) (dB) (dB) 6 4 2 0 -2 -4 -0.5 Frequency (GHz) (VG) Typical Small Signal Performance S-Parameters (VD = 4.5 V) 5.0 4.5 Typical 35 GHz Noise Figure and Gain as a Function of Gate Voltage (VG) Absolute Maximum Ratings Characteristic Operating Temperature (TC) Value -55°C to +90°C -65°C to +150°C 5.5 VDC 16 dBm 175°C Noise Figure (dB) 4.0 3.5 3.0 2.5 2.0 30 32 34 36 38 40 Storage Temperature (TST) Bias Voltage (VD) Power In (PIN) Junction Temperature (TJ) Bias Arrangement .01 µF 50 pF VG 50 pF .01 µF VD = 4.5 V Frequency (GHz) Typical Noise Figure Performance vs. Frequency RF IN RF OUT VG .01 µF 50 pF VD = 4.5 V 50 pF .01 µF For biasing on, adjust VG from zero to the desired value (-0.3 V typically is optimum). Then adjust VD from zero to the desired value (4.5 V recommended). For biasing off, reverse the biasing on procedure. 2 Alpha Industries, Inc. [781] 935-5150 • Fax [617] 824-4579 • Email sales@alphaind.com • www.alphaind.com Specifications subject to change without notice. 7/00A 28–36 GHz GaAs MMIC Low Noise Amplifier AA035N1-00, AA035N2-00 Circuit Schematic G D Detail A VG VD G RF IN D GD RF OUT SEE DETAIL A G D GD VG VD Alpha Industries, Inc. [781] 935-5150 • Fax [617] 824-4579 • Email sales@alphaind.com • www.alphaind.com Specifications subject to change without notice. 7/00A 3