AA038N2-00

28–40 GHz GaAs MMIC Low Noise Amplifier AA038N1-00, AA038N2-00 Features I Single Bias Supply Operation (4.5 V) I 3.8 dB Typical Noise Figure at 38 GHz I 17 dB Typical Small Signal Gain I 0.25 µm Ti/Pd/Au Gates I 100% On-Wafer RF, DC and Noise Figure Testing I 100% Visual Inspection to MIL-STD-883 MT 2010 0.588 0.087 0.124 0.000 0.000 0.246 1.264 1.813 2.146 2.600 2.710 Chip Outline 1.560 1.961 2.183 2.445 1.355 1.274 1.267 2.599 Description Alpha’s four-stage reactively-matched 28–40 GHz GaAs MMIC low noise amplifier has typical small signal gain of 17 dB with a typical noise figure of 3.8 dB at 38 GHz. The chip uses Alpha’s proven 0.25 µm low noise PHEMT technology, and is based upon MBE layers and electron beam lithography for the highest uniformity and repeatability. The FETs employ surface passivation to ensure a rugged, reliable part with through-substrate via holes and gold-based backside metallization to facilitate a conductive epoxy die attach process. Dimensions indicated in mm. All DC (V) pads are 0.1 x 0.1 mm and RF In, Out pads are 0.07 mm wide. Chip thickness = 0.1 mm. Absolute Maximum Ratings Characteristic Operating Temperature (TC) Storage Temperature (TST) Bias Voltage (VD) Power In (PIN) Junction Temperature (TJ) Value -55°C to +90°C -65°C to +150°C 6 VDC 10 dBm 175°C Electrical Specifications at 25°C (VDS = 4.5 V) AA038N1-00 Parameter Drain Current Small Signal Gain Noise Figure Input Return Loss Output Return Loss Output Power at 1 dB Gain Compression1 Thermal Resistance2 F = 28–40 GHz F = 38 GHz F = 28–40 GHz F = 28–40 GHz F = 38 GHz Condition Symbol IDS G NF RLI RLO P1 dB ΘJC 15 Min. Typ.3 35 17 3.8 -10 -8 6 101 4.2 -6 -6 Max. 50 Unit mA dB dB dB dB dBm °C/W AA038N2-00 Parameter Drain Current Small Signal Gain Noise Figure Input Return Loss Output Return Loss Output Power at 1 dB Gain Thermal Resistance2 1. Not measured on a 100% basis. 2. Calculated value based on measurement of discrete FET. Condition F = 37–39.5 GHz F = 38 GHz F = 37–39.5 GHz F = 37–39.5 GHz Compression1 F = 38 GHz Symbol IDS G NF RLI RLO P1 dB ΘJC Min. 17 Typ.3 35 19 3.8 -14 -11 6 101 Max. 50 4.2 -6 -8 Unit mA dB dB dB dB dBm °C/W 3. Typical represents the median parameter value across the specified frequency range for the median chip. Alpha Industries, Inc. [781] 935-5150 • Fax [617] 824-4579 • Email sales@alphaind.com • www.alphaind.com Specifications subject to change without notice. 12/99A 1 28–40 GHz GaAs MMIC Low Noise Amplifier AA038N1-00, AA038N2-00 Typical Performance Data 30 20 10 S21 Bias Arrangement VD2 .01 µF 50 pF (dB) 0 -10 S22 S11 RF IN RF OUT -20 -30 .01 µF 50 pF 18 20 22 24 26 28 30 32 34 36 38 40 42 VD1 Frequency (GHz) Typical Small Signal Performance S-Parameters (VD = 4.5 V) 11 10 Gain* 3.0 V, 5.5 V Gain 2.5 V Gain 4.5 V 31 29 27 25 23 21 NF 4.5 V NF 2.5 V NF* 3.0 V, 5.5 V 19 17 15 13 18 20 22 24 26 28 30 32 34 36 38 40 42 For biasing on, adjust VD from zero to the desired value (4.5 V recommended). For biasing off, reverse the biasing on procedure. Circuit Schematic D Noise Figure (dB) 9 8 7 6 5 4 3 2 Gain (dB) G Detail A VD2 Frequency (GHz) Typical Gain and Noise Figure Performance for Three Bias Conditions *Special Bias: VD1 = 3.0 V, VD2 = 5.5 V RF IN SEE DETAIL A G D G D G D G D RF OUT VD1 23 36 34 Gain 32 30 28 26 24 ID 22 20 NF 1.0 2.0 3.0 4.0 5.0 6.0 18 16 38 GHz Gain (dB) and 38 GHz Noise Figure (dB) 21 19 17 15 13 11 9 7 5 3 Drain Current (mA) VD1 and VD2 (V) Typical Gain and Noise Figure Performance vs. Drain Bias (VD1 = VD2) 2 Alpha Industries, Inc. [781] 935-5150 • Fax [617] 824-4579 • Email sales@alphaind.com • www.alphaind.com Specifications subject to change without notice. 12/99A