AFM04P2-000

Ka Band Power GaAs MESFET Chip AFM04P2-000 Features I 21 dBm Output Power @ 18 GHz I High Associated Gain, 9 dB @ 18 GHz I High Power Added Efficiency, 25% I Broadband Operation, DC–40 GHz I 0.25 µm Ti/Pd/Au Gates I Passivated Surface I Through-Substrate Via Hole Grounding 0.327 mm 0.655 mm Chip thickness = 0.1 mm. Drain 0.110 mm 0.395 mm Gate 0.110 mm Description The AFM04P2-000 is a high performance power GaAs MESFET chip having a gate length of 0.25 µm and a total gate periphery of 400 µm. The device has excellent gain and power performance through 40 GHz, making it suitable for a wide range of commercial and military applications in oscillator and amplifier circuits. It employs Ti/Pd/Au gate metallization and surface passivation to ensure a rugged, reliable part. Throughsubstrate via holes are incorporated into the chip to facilitate low inductance grounding of the source for improved high frequency and high gain performance. Absolute Maximum Ratings Characteristic Drain to Source Voltage (VDS) Gate to Source Voltage (VGS) Drain Current (IDS) Gate Current (IGS) Total Power Dissipation (PT) Storage Temperature (TST) Channel Temperature (TCH) Value 6V -4 V IDSS 1 mA 700 mW -65 to +150°C 175°C Electrical Specifications at 25°C Parameter Saturated Drain Current (IDSS) Transconductance (gm) Pinch-off Voltage (VP) Gate to Drain Breakdown Voltage (Vbgd) Output Power at 1 dB Compression (P1 dB) Gain at 1 dB Compression (G1 dB) Power Added Efficiency (ηadd) Output Power at 1 dB Compression (P1 dB) Gain at 1 dB Compression (G1 dB) Power Added Efficiency (ηadd) Thermal Resistance (ΘJC) VDS = 5 V, IDS = 70 mA, F = 30 GHz VDS = 5 V, IDS = 70 mA, F = 18 GHz Test Conditions VDS = 2 V, VGS = 0 V VDS = 5 V, IDS = 1 mA IGD = -400 µA Min. 90.0 60.0 1.0 8.0 Typ. 140.0 80.0 3.0 12.0 21.0 9.0 25.0 20.0 5.0 15.0 TBASE = 25°C 250.0 5.0 Max. 190.0 Unit mA mS -V -V dBm dB % dBm dB % °C/W Alpha Industries, Inc. [781] 935-5150 • Fax [617] 824-4579 • Email sales@alphaind.com • www.alphaind.com Specifications subject to change without notice. 12/99A 1 Ka Band Power GaAs MESFET Chip AFM04P2-000 Typical S-Parameters (VDS = 5 V, IDS = 70 mA) Freq. (GHz) 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 S11 Mag. 0.969 0.958 0.935 0.913 0.893 0.877 0.863 0.852 0.843 0.836 0.831 0.826 0.823 0.821 0.819 0.818 0.817 0.817 0.817 0.818 0.819 0.820 0.821 0.822 0.824 0.825 0.826 0.829 0.831 0.833 0.835 0.836 0.838 0.840 0.842 0.844 0.846 0.848 0.850 Ang. -37.191 -54.069 -69.318 -82.889 -94.881 -105.468 -114.843 -123.189 -130.670 -137.422 -143.563 -149.188 -154.374 -159.187 -163.679 -167.895 171.872 -175.369 -179.221 177.359 174.083 170.936 167.905 164.969 162.148 159.403 156.737 154.144 151.618 149.155 146.649 144.398 142.097 139.845 137.637 135.472 133.347 131.261 129.211 Mag. 5.040 4.740 4.398 4.050 3.719 3.415 31.420 2.898 2.683 2.492 2.322 2.171 2.036 1.914 1.805 1.605 1.615 1.532 1.456 1.386 1.321 1.261 1.205 1.512 1.103 1.057 1.013 0.972 0.922 0.895 0.860 0.826 0.794 0.764 0.734 0.706 0.679 0.653 0.628 S21 Ang. 153.579 141.521 130.518 120.568 111.573 103.398 95.911 88.991 82.540 67.477 70.736 65.267 60.027 54.985 50.114 45.393 40.805 36.335 31.973 27.760 23.535 19.445 15.343 11.498 6.633 3.836 0.105 -3.563 -7.169 -10.714 -14.200 -17.627 -20.996 -24.308 -27.563 -30.761 -33.903 -36.988 -40.017 Mag. 0.029 0.041 0.051 0.058 0.064 0.068 0.071 0.073 0.074 0.075 0.076 0.076 0.076 0.065 0.074 0.074 0.073 0.072 0.071 0.060 0.069 0.068 0.067 0.066 0.065 0.064 0.063 0.062 0.062 0.061 0.061 0.061 0.061 0.061 0.061 0.061 0.061 0.062 0.063 S12 Ang. 68.605 59.064 50.587 43.171 36.722 31.107 26.196 21.873 18.042 14.624 11.558 8.796 6.302 4.047 2.007 0.167 -1.486 -2.961 -4.266 -5.405 -6.382 -7.201 -7.863 -8.371 -8.728 -8.937 -9.004 -8.937 -8.740 -8.427 -8.010 -7.502 -6.920 -6.281 -5.604 -4.907 -4.209 -3.525 -2.874 Mag. 0.550 0.533 0.514 0.497 0.482 0.471 0.462 0.456 0.453 0.452 0.453 0.455 0.459 0.464 0.470 0.477 0.484 0.492 0.501 0.510 0.520 0.530 0.540 0.551 0.561 0.572 0.583 0.594 0.605 0.616 0.627 0.638 0.648 0.659 0.670 0.680 0.690 0.700 0.710 S22 Ang. -18.296 -26.529 -33.959 -40.630 -46.663 -52.183 -57.310 -62.138 -66.738 -71.161 -75.442 -79.606 -83.671 -87.648 -91.546 -95.372 -99.129 -102.821 -106.451 -110.021 -113.533 -116.989 -120.389 -123.737 -127.031 -130.275 -133.468 -136.612 -139.606 -142.754 -145.754 -148.608 -151.615 -154.477 -157.293 -160.065 -162.693 -165.477 -168.117 k 0.100 0.150 0.200 0.250 0.299 0.349 0.398 0.447 0.496 0.544 0.593 0.641 0.688 0.735 0.781 0.827 0.872 0.916 0.959 1.001 1.041 1.069 1.116 1.150 1.181 1.210 1.235 1.256 1.273 1.285 1.292 1.294 1.291 1.283 1.270 1.251 1.228 1.202 1.171 MAG (dB) 22.364 20.613 19.278 18.247 17.658 17.104 16.464 15.986 15.566 15.193 14.858 14.447 14.285 14.037 13.811 13.063 13.412 13.235 13.071 12.753 11.534 10.915 10.431 10.024 9.671 9.358 9.080 8.830 8.604 8.403 8.222 8.061 7.920 7.797 7.694 7.611 6.550 7.513 7.504 S-Parameters include the effects of two 0.8 mil diameter bond wires, each 10 mil long, to each of the gate and drain terminals. 2 Alpha Industries, Inc. [781] 935-5150 • Fax [617] 824-4579 • Email sales@alphaind.com • www.alphaind.com Specifications subject to change without notice. 12/99A Ka Band Power GaAs MESFET Chip AFM04P2-000 Typical Performance Data Total Power Dissipation PT (W) 1.00 150 VGS = 0 V 0.75 120 -0.5 V lDS (mA) 90 60 30 0 0.50 -1.0 V -1.5 V -2.0 V -2.5 V 0 1 2 3 4 5 0.25 0 0 50 100 150 200 TBASE (˚C) VDS (V) Power Derating I-V TOM-2 Model Parameters Parameter BETA VPO U GAMA Q NG ND DELT ALFA T CGSO CGDO VBI IS N IBO NR VBD RG RD RS LG LD LS CDS RDSD CDSD CGE CDE Transconductance Coefficient Pinch-off voltage Mobility degradation fitting parameter Slope parameter of pinch-off voltage Power law parameter Subthreshold slope gate parameter Subthreshold slope drain parameter Slope of drain characteristics in the saturated region Slope of drain characteristics in the linear region Channel transmit-time delay Gate-source Schottky barrier capacitance at VGS = 0 Gate-drain Schottky barrier capacitance at VGS = 0 Built-in barrier potential Diode saturation current Diode ideality factor Breakdown saturation current Breakdown ideality factor Breakdown voltage Gate terminal resistance Drain terminal resistance Source terminal resistance Gate lead inductance Drain lead inductance Source lead inductance Drain-source capacitance Channel trapping resistance Low frequency trapping resistance Gate-source electrode capacitance Drain-source electrode capacitance V Ω Ω Ω nH nH nH pF Ω nF fF fF A /A, V /V pS pF pF V A Description Unit A/V2 V /V Default 0.09464 -1.8760 0.3599 0.03458 1.6560 0.6025 0.6050 0.5633 1.9400 6.4330 0.4232 0.03138 1.200 0.563e-12 1.1000 1.000e-16 10.0 20.00 1.0000 2.0000 0.8000 0.5572 0.2279 0.03532 0.1555 107.99 12.03 7.7240 9.4390 Alpha Industries, Inc. [781] 935-5150 • Fax [617] 824-4579 • Email sales@alphaind.com • www.alphaind.com Specifications subject to change without notice. 12/99A 3