AO4800

July 2001 AO4800 Dual N-Channel Enhancement Mode Field Effect Transistor General Description The AO4800 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. The two MOSFETs make a compact and efficient switch and synchronous rectifier combination for use in buck converters. Features VDS (V) = 30V ID = 6.9A RDS(ON) < 27m Ω (VGS = 10V) RDS(ON) < 32m Ω (VGS = 4.5V) RDS(ON) < 50m Ω (VGS = 2.5V) D1 S2 G2 S1 G1 1 2 3 4 8 7 6 5 D2 D2 D1 D1 D2 G1 S1 G2 S2 SOIC-8 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain TA=25°C A Current TA=70°C ID Pulsed Drain Current B Maximum 30 ±12 6.9 5.8 40 2 1.44 -55 to 150 Units V V A IDM PD TJ, TSTG TA=25°C TA=70°C Power Dissipation Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Lead C W °C Symbol t ≤ 10s Steady-State Steady-State RθJA RθJL Typ 48 74 35 Max 62.5 110 40 Units °C/W °C/W °C/W Alpha & Omega Semiconductor, Ltd. AO4800 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current Conditions ID=250µA, VGS=0V VDS=24V, VGS=0V TJ=55°C VDS=0V, VGS=±12V VDS=VGS ID=250µA VGS=4.5V, VDS=5V VGS=10V, ID=6.9A TJ=125°C RDS(ON) Static Drain-Source On-Resistance VGS=4.5V, ID=6.0A VGS=2.5V, ID=5A 12 0.7 25 1 22.6 33 27 42 16 0.71 Min 30 1 5 100 1.4 27 40 32 50 Typ Max Units V µA nA V A mΩ mΩ mΩ S V A pF pF pF Ω nC nC nC ns ns ns ns ns nC gFS VSD IS Forward Transconductance VDS=5V, ID=5A Diode Forward Voltage IS=1A Maximum Body-Diode Continuous Current 1 3 DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance SWITCHING PARAMETERS Qg Total Gate Charge Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr Body Diode Reverse Recovery time Qrr Body Diode Reverse Recovery charge VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz 858 110 80 1.24 9.6 1.65 3 5.7 13 37 4.2 15.5 7.9 VGS=4.5V, VDS=15V, ID=6.9A VGS=10V, VDS=15V, RL=2.2Ω, RGEN=6Ω IF=5A, dI/dt=100A/µs IF=5A, dI/dt=100A/µs A: The value of R θJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The value in any a given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R θJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using 80 µs pulses, duty cycle 0.5% max. 2 E. These tests are performed with the device mounted on 1 in FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA curve provides a single pulse rating. Alpha & Omega Semiconductor, Ltd. AO4800 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 30 25 20 ID (A) 15 10 5 0 0 10V 20 3V 4.5V 2.5V ID(A) 16 12 8 VGS=2V 4 0 1 2 3 4 5 0 0.5 1 1.5 2 2.5 3 VDS (Volts) Fig 1: On-Region Characteristics VGS (Volts) Figure 2: Transfer Characteristics 125°C 25°C VDS=5V 60 50 RDS(ON) (mΩ ) 40 30 20 10 0 5 10 15 20 ID (Amps) Figure 3: On-Resistance vs. Drain Current and Gate Voltage VGS=4.5V VGS=2.5V Normalized On-Resistance 1.7 1.6 1.5 1.4 1.3 1.2 1.1 1 0.9 0.8 0 50 100 150 200 Temperature ( °C) Figure 4: On-Resistance vs. Junction Temperature VGS=2.5V ID=5A VGS=4.5V VGS=10V VGS=10V 70 60 RDS(ON) (mΩ ) 50 40 30 20 10 0 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage 25°C 125°C 1.0E+01 ID=5A IS Amps 1.0E+00 1.0E-01 1.0E-02 1.0E-03 1.0E-04 1.0E-05 1.0E-06 0.00 125°C 25°C 0.25 0.50 0.75 1.00 1.25 1.50 VSD (Volts) Figure 6: Body diode characteristics Alpha & Omega Semiconductor, Ltd. AO4800 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 5 4 VGS (Volts) 3 2 1 0 0 2 4 6 8 10 12 Qg (nC) Figure 7: Gate-Charge characteristics 1500 VDS=15V ID=6.9A Capacitance (pF) 1250 1000 750 500 250 0 0 5 10 15 20 25 30 VDS (Volts) Figure 8: Capacitance Characteristics Coss Crss Ciss f=1MHz VGS=0V 100.0 RDS(ON) limited 10.0 ID (Amps) 1ms 1 0 ms 0.1s 1.0 1s 10s DC 0.1 0.1 1 VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 10 100 TJ(Max)=150°C TA=25°C 100µ s Power W 40 TJ(Max)=150°C TA=25°C 30 20 10 0 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) 10 Z θJA Normalized Transient Thermal Resistance D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=62.5°C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 0.1 PD Ton Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 1 T 100 1000 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance Alpha & Omega Semiconductor, Ltd. ALPHA & OMEGA SEMICONDUCTOR, INC. SO-8 Package Data DIMENSIONS IN MILLIMETERS SYMBOLS DIMENSIONS IN INCHES A A1 A2 b c D E1 e E h L aaa θ θ MIN 1.45 0.00 −−− 0.33 0.19 4.80 3.80 5.80 0.25 0.40 −−− 0° NOM 1.50 −−− 1.45 −−− −−− −−− −−− 1.27 BSC −−− −−− −−− −−− −−− MAX 1.55 0.10 −−− 0.51 0.25 5.00 4.00 6.20 0.50 1.27 0.10 8° MIN 0.057 0.000 −−− 0.013 0.007 0.189 0.150 0.228 0.010 0.016 −−− 0° NOM 0.059 −−− 0.057 −−− −−− −−− −−− 0.050 BSC −−− −−− −−− −−− −−− MAX 0.061 0.004 −−− 0.020 0.010 0.197 0.157 0.244 0.020 0.050 0.004 8° NOTE: 1. LEAD FINISH: 150 MICROINCHES ( 3.8 um) MIN. THICKNESS OF Tin/Lead (SOLDER) PLATED ON LEAD 2. TOLERANCE ± 0.100 mm (4 mil) UNLESS OTHERWISE SPECIFIED 3. COPLANARITY : 0.1000 mm 4. DIMENSION L IS MEASURED IN GAGE PLANE PACKAGE MARKING DESCRIPTION RECOMMENDED LAND PATTERN NOTE: LG PARTN F A Y W LN - AOS LOGO - PART NUMBER CODE. - FAB LOCATION - ASSEMBLY LOCATION - YEAR CODE - WEEK CODE. - ASSEMBLY LOT CODE SO-8 PART NO. CODE UNIT: mm PART NO. AO4400 AO4401 CODE 4400 4401 PART NO. AO4800 AO4801 CODE 4800 4801 PART NO. AO4700 AO4701 CODE 4700 4701 ALPHA & OMEGA SEMICONDUCTOR, INC. SO-8 Carrier Tape SO-8 Tape and Reel Data SO-8 Reel SO-8 Tape Leader / Trailer & Orientation