GaAs 50 dB IC Voltage Variable Dual Control Attenuator DC–3 GHz
AT002N5-11 Features
I Dual Control Voltages I Low Insertion Loss I 8 Lead Hermetic Surface Mount Package I Capable of Meeting MIL-STD Requirements5
-11
ORIENTATION MARK 0.180 (4.57 mm) SQ. MAX.
0.150 (3.81 mm) 0.017 (0.43 mm) 0.013 (0.33 mm)
0.050 (1.27 mm) TYP.
0.400 (10.16 mm) 0.380 (9.65 mm)
Description
The AT002N5-11 is a GaAs IC FET absorptive attenuator. This device provides up to 50 dB variable attenuation from DC–3 GHz. Attenuation can be controlled by varying each of the two control bias voltages from 0 to -5 V. This attenuator is recommended for fast response AGC circuits in commercial and high reliability applications.
0.070 (1.78 mm) 0.040 (1.02 mm) 0.075 (1.91 mm) MAX.
0.006 (0.15 mm) 0.004 (0.10 mm)
0.250 (6.35 mm) 0.200 (5.08 mm)
Electrical Specifications at 25°C
Parameter1 Insertion Loss2 Frequency4 DC–1.0 GHz DC–2.0 GHz DC–3.0 GHz DC–1.0 GHz DC–2.0 GHz DC–3.0 GHz DC–1.0 GHz DC–2.0 GHz DC–3.0 GHz 50 45 40 Min. Typ. 1.2 1.4 1.7 52 48 42 1.2:1 1.4:1 1.6:1 1.3:1 1.5:1 1.8:1 Max. 1.4 1.8 2.0 Unit dB dB dB dB dB dB
Attenuation Range
VSWR (I/O)
Operating Characteristics at 25°C
Parameter Switching Characteristics Condition Rise, Fall (10/90% or 90/10% RF) On, Off (50% CTL to 90/10% RF) Video Feedthru3 For All Attenuation Levels VLow = 0 to -0.2 V @ 20 µA Max. VHigh = -5 V @ 100 µA Max. 0.5–3 GHz 0.05 GHz Frequency Min. Typ. 10 15 20 0 -3 Max. Unit ns ns mV dBm dBm
Input Power for 1 dB Compression Control Voltages
1. All measurements made in a 50 Ω system, unless otherwise specified. 2. Insertion loss changes by 0.003 dB/°C. 3. Video feedthru measured with 1 ns risetime pulse and 500 MHz bandwidth. 4. DC = 300 kHz. 5. See Quality/Reliability section.
Alpha Industries, Inc. [781] 935-5150 • Fax [617] 824-4579 • Email sales@alphaind.com • www.alphaind.com
Specifications subject to change without notice. 6/00A
1
GaAs 50 dB IC Voltage Variable Dual Control Attenuator DC–3 GHz
AT002N5-11
Typical Performance Data
2.4 2.0 60 50 dB ± 4 dB 50
Insertion Loss (dB)
Attenuation (dB)
1.6 1.2
+85˚C
40 dB ± 2 dB 40 30 dB ± 1 dB 30 20 dB ± 0.5 dB 20 10 dB ± 0.2 dB 10 DC
-55˚C 0.8 0.4 DC
1
2
3
1
2
3
Frequency (GHz)
Frequency (GHz)
Insertion Loss vs. Frequency
Attenuation (By State) vs. Frequency
Typical Transfer Curve
PIN at 1.0 dB Compression (dBm)
F = 1 GHz, VP1 = 3.5 V 0 F = 500 MHz 20 15 10 5 0 -5 0 5 10 15 20 25 30
V1 V2 Control Voltages (V)
-1.0 -2.0 -3.0 V2 (Shunt) -4.0 -5.0 DC
V1 (Series)
10
20
30
40
50
60
Relative Attenuation (dB)
Attenuation (dB)
Relative Attenuation vs. Control Voltages
1. VP = FET pinchoff voltage.
Attenuation vs. 1.0 dB Compression Point
Truth Table Absolute Maximum Ratings
Characteristic RF Input Power (RF In) Control Voltage (VC) Operating Temperature (TOP) Storage Temperature (TST) Thermal Resistance (ΘJC) Value 10 mW > 500 MHz 0/-8 V Control 4 mW 50 MHz -8 V Control +0.2 V, -10 V -55°C to +125°C -65°C to +150°C 25°C/W
GND J1 GND V1 GND J2 GND V2
V1 0 -5
V2 -5 0
Attenuation J1–J2 Insertion Loss Full Attenuation
Pin Out
2
Alpha Industries, Inc. [781] 935-5150 • Fax [617] 824-4579 • Email sales@alphaind.com • www.alphaind.com
Specifications subject to change without notice. 6/00A