AS29CF040-55CCIN

AS29CF040-55CCIN 512K X 8 Bit CMOS 5.0 Volt-only Document Title 512K X 8 Bit CMOS 5.0 Volt-only, Uniform Sector - Parallel Flash Memory Revision History Rev. No. 1.0 History Issue Date Remark Initial issue July 18, 2019 Preliminary Alliance Memory Inc. 511 Taylor Way, San Carlos, CA 94070 TEL: (650) 610-6800 FAX: (650) 620-9211 Alliance Memory Inc. reserves the right to change products or specification without notice Confidential - 1 of 27 - Rev.1.0. July 2019 AS29CF040-55CCIN 512K X 8 Bit CMOS 5.0 Volt-only Features „ 5.0V ± 10% for read and write operations „ Access times: - 55 (max.) „ Current: - 20 mA typical active read current - 30 mA typical program/erase current - 1 µA typical CMOS standby „ Flexible sector architecture - 8 uniform sectors of 64 Kbyte each - Any combination of sectors can be erased - Supports full chip erase - Sector protection: A hardware method of protecting sectors to prevent any inadvertent program or erase operations within that sector „ Industrial operating temperature range: -40°C~+85°C „ Embedded Erase Algorithms - Embedded Erase algorithm will automatically erase the entire chip or any combination of designated sectors and verify the erased sectors „ „ „ „ „ „ - Embedded Program algorithm automatically writes and verifies bytes at specified addresses Minimum 100,000 program/erase cycles per sector 20-year data retention at 125°C - Reliable operation for the life of the system Compatible with JEDEC-standards - Pinout and software compatible with single-powersupply Flash memory standard - Superior inadvertent write protection Data Polling and toggle bits - Provides a software method of detecting completion of program or erase operations Erase Suspend/Erase Resume - Suspends a sector erase operation to read data from, or program data to, a non-erasing sector, then resumes the erase operation Package options - 32-pin PLCC - All Pb-free (Lead-free) products are RoHS2.0 compliant General Description The AS29CF040-55CCIN is a 5.0 volt-only Flash memory organized as 524,288 bytes of 8 bits each. The 512 Kbytes of data are further divided into eight sectors of 64 Kbytes each for flexible sector erase capability. The 8 bits of data appear on I/O0 - I/O7 while the addresses are input on A0 to A18. The AS29CF040-55CCIN is offered in 32-pin PLCC packages. This device is designed to be programmed in-system with the standard system 5.0volt VCC supply. Additional 12.0 volt VPP is not required for in-system write or erase operations. However, the AS29CF040-55CCIN can also be programmed in standard EPROM programmers. The AS29CF040-55CCIN has a second toggle bit, I/O2, to indicate whether the addressed sector is being selected for erase, and also offers the ability to program in the Erase Suspend mode. The standard AS29CF040-55CCIN offers access times of 55 ns, allowing high-speed microprocessors to operate without wait states. To eliminate bus contention the device has separate chip enable ( CE ), write enable ( WE ) and output enable ( OE ) controls. The device requires only a single 5.0 volt power supply for both read and write functions. Internally generated and regulated voltages are provided for the program and erase operations. The AS29CF040-55CCIN is entirely software command set compatible with the JEDEC single-power-supply Flash standard. Commands are written to the command register using standard microprocessor write timings. Register contents serve as input to an internal statemachine that controls the erase and programming circuitry. Write cycles also internally latch addresses and data needed for the programming and erase operations. Confidential - 2 of 27 - Reading data out of the device is similar to reading from other Flash or EPROM devices. Device programming occurs by writing the proper program command sequence. This initiates the Embedded Program algorithm - an internal algorithm that automatically times the program pulse widths and verifies proper program margin. Device erasure occurs by executing the proper erase command sequence. This initiates the Embedded Erase algorithm - an internal algorithm that automatically preprograms the array (if it is not already programmed) before executing the erase operation. During erase, the device automatically times the erase pulse widths and verifies proper erase margin. The host system can detect whether a program or erase operation is complete by reading the I/O7 ( Data Polling) and I/O6 (toggle) status bits. After a program or erase cycle has been completed, the device is ready to read array data or accept another command. The sector erase architecture allows memory sectors to be erased and reprogrammed without affecting the data contents of other sectors. The AS29CF040-55CCIN is fully erased when shipped from the factory. The hardware sector protection feature disables operations for both program and erase in any combination of the sectors of memory. This can be achieved via programming equipment. The Erase Suspend feature enables the user to put erase on hold for any period of time to read data from, or program data to, any other sector that is not selected for erasure. True background erase can thus be achieved. Power consumption is greatly reduced when the device is placed in the standby mode. Rev.1.0. July 2019 AS29CF040-55CCIN Pin Configurations Confidential A12 A15 A16 A18 VCC WE A17 4 3 2 1 32 31 30 „ PLCC A7 5 29 A14 A6 6 28 A13 A5 7 27 A8 A4 8 26 A9 A3 9 25 A11 A2 10 24 OE A1 11 23 A10 A0 12 22 CE I/O0 13 21 I/O7 14 15 16 17 18 19 20 I/O1 I/O2 VSS I/O3 I/O4 I/O5 I/O6 AS29CF040-55CCIN - 3 of 27 - Rev.1.0. July 2019 AS29CF040-55CCIN Block Diagram I/O0 - I/O7 VCC VSS WE Input/Output Buffers Erase Voltage Generator State Control PGM Voltage Generator Command Register Chip Enable Output Enable Logic CE OE VCC Detector Timer A0-A18 Address Latch Y-Decoder STB X-decoder STB Data Latch Y-Gating Cell Matrix Pin Descriptions Pin No. Confidential Description A0 - A18 Address Inputs I/O0 - I/O7 Data Inputs/Outputs CE Chip Enable WE Write Enable OE Output Enable VSS Ground VCC Power Supply - 4 of 27 - Rev.1.0. July 2019 AS29CF040-55CCIN Absolute Maximum Ratings* *Comments Ambient Operating Temperature …. . . . . -55°C to + 125°C Storage Temperature . . . . . . . . . . …. . . . -65°C to + 125°C VCC to Ground . . . . . . . . . . . . . . . . . …. . . . . -2.0V to 7.0V Output Voltage (Note 1) . . . . . . . . . . . . ….. . . -2.0V to 7.0V A9 & OE (Note 2) . . . . . . . . . . . . . . . . . . …. -2.0V to 12.5V All other pins (Note 1) . . . . . . . . . . . . . . . . . …-2.0V to 7.0V Output Short Circuit Current (Note 3) . . . . . . . …. . . 200mA Stresses above those listed under "Absolute Maximum Ratings" may cause permanent damage to this device. These are stress ratings only. Functional operation of this device at these or any other conditions above those indicated in the operational sections of these specification is not implied or intended. Exposure to the absolute maximum rating conditions for extended periods may affect device reliability. Notes: 1. Minimum DC voltage on input or I/O pins is -0.5V. During voltage transitions, inputs may undershoot VSS to -2.0V for periods of up to 20ns. Maximum DC voltage on output and I/O pins is VCC +0.5V. During voltage transitions, outputs may overshoot to VCC +2.0V for periods up to 20ns. 2. Minimum DC input voltage on A9 pins is -0.5V. During voltage transitions, A9 and OE may overshoot VSS to 2.0V for periods of up to 20ns. Maximum DC input voltage on A9 and OE is +12.5V which may overshoot to 13.5V for periods up to 20ns. 3. No more than one output is shorted at a time. Duration of the short circuit should not be greater than one second. Operating Ranges Industrial operating temperature range: -40°C to 85°C VCC Supply Voltages VCC for ± 10% devices ….. ….. . . . . . . . . . . +4.5V to +5.5V Operating ranges define those limits between which the functionally of the device is guaranteed. Device Bus Operations This section describes the requirements and use of the device bus operations, which are initiated through the internal command register. The command register itself does not occupy any addressable memory location. The register is composed of latches that store the commands, along with the address and data information needed to execute the command. The contents of the register serve as inputs to the internal state machine. The state machine outputs dictate the function of the device. The appropriate device bus operations table lists the inputs and control levels required, and the resulting output. The following subsections describe each of these operations in further detail. Table 1. AS29CF040-55CCIN Device Bus Operations Operation I/O0 - I/O7 CE OE WE Read L L H AIN DOUT Write L H L AIN DIN VCC ± 0.5 V X X X High-Z TTL Standby H X X X High-Z Output Disable L H H X High-Z CMOS Standby A0 – A18 Legend: L = Logic Low = VIL, H = Logic High = VIH, VID = 12.0 ± 0.5V, X = Don't Care, DIN = Data In, DOUT = Data Out, AIN = Address In Note: See the "Sector Protection/Unprotection" section, for more information. Confidential - 5 of 27 - Rev.1.0. July 2019 AS29CF040-55CCIN Requirements for Reading Array Data To read array data from the outputs, the system must drive the CE and OE pins to VIL. CE is the power control and selects the device. OE is the output control and gates array data to the output pins. WE should remain at VIH all the time during read operation. The internal state machine is set for reading array data upon device power-up, or after a hardware reset. This ensures that no spurious alteration of the memory content occurs during the power transition. No command is necessary in this mode to obtain array data. Standard microprocessor read cycles that assert valid addresses on the device address inputs produce valid data on the device data outputs. The device remains enabled for read access until the command register contents are altered. See "Reading Array Data" for more information. Refer to the AC Read Operations table for timing specifications and to the Read Operations Timings diagram for the timing waveforms, lCC1 in the DC Characteristics table represents the active current specification for reading array data. Writing Commands/Command Sequences To write a command or command sequence (which includes programming data to the device and erasing sectors of memory), the system must drive WE and CE to VIL, and OE to VIH. An erase operation can erase one sector, multiple sectors, or the entire device. The Sector Address Tables indicate the address range that each sector occupies. A "sector address" consists of the address inputs required to uniquely select a sector. See the "Command Definitions" section for details on erasing a sector or the entire chip, or suspending/resuming the erase operation. After the system writes the autoselect command sequence, the device enters the autoselect mode. The system can then read autoselect codes from the internal register (which is separate from the memory array) on I/O7 - I/O0. Standard read cycle timings apply in this mode. Refer to the "Autoselect Mode" and "Autoselect Command Sequence" sections for more information. ICC2 in the Characteristics table represents the active current specification for the write mode. The "AC Characteristics" section contains timing specification tables and timing diagrams for write operations. Program and Erase Operation Status During an erase or program operation, the system may check the status of the operation by reading the status bits on I/O7 - I/O0. Standard read cycle timings and ICC read specifications apply. Refer to "Write Operation Status" for more information, and to each AC Characteristics section for timing diagrams. Standby Mode When the system is not reading or writing to the device, it can place the device in the standby mode. In this mode, current consumption is greatly reduced, and the outputs are placed in the high impedance state, independent of the OE input. The device enters the CMOS standby mode when the CE pin is held at VCC ± 0.5V. (Note that this is a more restricted voltage range than VIH.) The device enters the TTL standby mode when CE is held at VIH. The device requires the standard access time (tCE) before it is ready to read data. If the device is deselected during erasure or programming, the device draws active current until the operation is completed. ICC3 in the DC Characteristics tables represents the standby current specification. Output Disable Mode When the OE input is at VIH, output from the device is disabled. The output pins are placed in the high impedance state. Table 2. Sector Addresses Table Sector A18 A17 A16 Address Range SA0 0 0 0 00000h - 0FFFFh SA1 0 0 1 10000h - 1FFFFh SA2 0 1 0 20000h - 2FFFFh SA3 0 1 1 30000h - 3FFFFh SA4 1 0 0 40000h - 4FFFFh SA5 1 0 1 50000h - 5FFFFh SA6 1 1 0 60000h - 6FFFFh SA7 1 1 1 70000h - 7FFFFh Note: All sectors are 64 Kbytes in size. Confidential - 6 of 27 - Rev.1.0. July 2019 AS29CF040-55CCIN Autoselect Mode The autoselect mode provides manufacturer and device identification, and sector protection verification, through identifier codes output on I/O7 - I/O0. This mode is primarily intended for programming equipment to automatically match a device to be programmed with its corresponding programming algorithm. However, the autoselect codes can also be accessed in-system through the command register. When using programming equipment, the autoselect mode requires VID (11.5V to 12.5 V) on address pinA9. Address pins A6, A1, and AO must be as shown in Autoselect Codes (High Voltage Method) table. In addition, when verifying sector protection, the sector address must appear on the appropriate highest order address bits. Refer to the corresponding Sector Address Tables. The Command Definitions table shows the remaining address bits that are don't care. When all necessary bits have been set as required, the programming equipment may then read the corresponding identifier code on I/O7 - I/O0.To access the autoselect codes in-system, the host system can issue the autoselect command via the command register, as shown in the Command Definitions table. This method does not require VID. See "Command Definitions" for details on using the autoselect mode. Table 3. AS29CF040-55CCIN Autoselect Codes (High Voltage Method) A9 A8 - A7 A6 A5 - A2 A1 AO Identifier Code on I/O7 - I/O0 X VID X VIL X VIL VIL 37h X X VID X VIL X VIL VIH 86h Sector Protection Verification Sector Address X VID X VIL X VIH VIL 01h (protected) Continuation ID X X Description A18 - A16 A15 - A10 X Manufacturer ID: Alliance Memory Device ID: AS29CF040-55CCIN 00h (unprotected) VID X VIL X VIH VIH 7Fh Sector Protection/Unprotection Power-Up Write Inhibit The hardware sector protection feature disables both program and erase operations in any sector. The hardware sector unprotection feature re-enables both program and erase operations in previously protected sectors. Sector protection/unprotection must be implemented using programming equipment. The procedure requires a high voltage (VID) on address pin A9 and the control pins. The device is shipped with all sectors unprotected. It is possible to determine whether a sector is protected or unprotected. See "Autoselect Mode" for details. If WE = CE = VIL and OE = VIH during power up, the device does not accept commands on the rising edge of WE . The internal state machine is automatically reset to reading array data on the initial power-up. Hardware Data Protection The requirement of command unlocking sequence for programming or erasing provides data protection against inadvertent writes (refer to the Command Definitions table). In addition, the following hardware data protection measures prevent accidental erasure or programming, which might otherwise be caused by spurious system level signals during VCC power-up transitions, or from system noise. The device is powered up to read array data to avoid accidentally writing data to the array. Write Pulse "Glitch" Protection Noise pulses of less than 5ns (typical) on OE , CE or WE do not initiate a write cycle. Logical Inhibit Write cycles are inhibited by holding any one of OE =VIL, CE = VIH or WE = VIH. To initiate a write cycle, CE and WE must be a logical zero while OE is a logical one. Confidential - 7 of 27 - Command Definitions Writing specific address and data commands or sequences into the command register initiates device operations. The Command Definitions table defines the valid register command sequences. Writing incorrect address and data values or writing them in the improper sequence resets the device to reading array data. All addresses are latched on the falling edge of WE or CE , whichever happens later. All data is latched on the rising edge of WE or CE , whichever happens first. Refer to the appropriate timing diagrams in the "AC Characteristics" section. Reading Array Data The device is automatically set to reading array data after device power-up. No commands are required to retrieve data. The device is also ready to read array data after completing an Embedded Program or Embedded Erase algorithm. After the device accepts an Erase Suspend command, the device enters the Erase Suspend mode. The system can read array data using the standard read timings, except that if it reads at an address within erase-suspended sectors, the device outputs status data. After completing a programming operation in the Erase Suspend mode, the Rev.1.0. July 2019 AS29CF040-55CCIN system may once again read array data with the same exception. See "Erase Suspend/Erase Resume Commands" for more information on this mode. The system must issue the reset command to re-enable the device for reading array data if I/O5 goes high, or while in the autoselect mode. See the "Reset Command" section, next. See also "Requirements for Reading Array Data" in the "Device Bus Operations" section for more information. The Read Operations table provides the read parameters, and Read Operation Timings diagram shows the timing diagram. Reset Command Writing the reset command to the device resets the device to reading array data. Address bits are don't care for this command. The reset command may be written between the sequence cycles in an erase command sequence before erasing begins. This resets the device to reading array data. Once erasure begins, however, the device ignores reset commands until the operation is complete. The reset command may be written between the sequence cycles in a program command sequence before programming begins. This resets the device to reading array data (also applies to programming in Erase Suspend mode). Once programming begins, however, the device ignores reset commands until the operation is complete. The reset command may be written between the sequence cycles in an autoselect command sequence. Once in the autoselect mode, the reset command must be written to return to reading array data (also applies to autoselect during Erase Suspend). If I/O5 goes high during a program or erase operation, writing the reset command returns the device to reading array data (also applies during Erase Suspend). Autoselect Command Sequence The autoselect command sequence allows the host system to access the manufacturer and devices codes, and determine whether or not a sector is protected. The Command Definitions table shows the address and data requirements. This method is an alternative to that shown in the Autoselect Codes (High Voltage Method) table, which is intended for PROM programmers and requires VID on address bit A9. The autoselect command sequence is initiated by writing two unlock cycles, followed by the autoselect command. The device then enters the autoselect mode, and the system may read at any address any number of times, without initiating another command sequence. A read cycle at address XX00h retrieves the manufacturer code and another read cycle at XX03h retrieves the continuation code. A read cycle at address XX01h returns the device code. A read cycle containing a sector address (SA) and the address 02h in returns 01h if that sector is protected, or 00h if it is unprotected. Refer to the Sector Address tables for valid sector addresses. The system must write the reset command to exit the autoselect mode and return to reading array data. required to provide further controls or timings. The device automatically provides internally generated program pulses and verify the programmed cell margin. The Command Definitions table shows the address and data requirements for the byte program command sequence. When the Embedded Program algorithm is complete, the device then returns to reading array data and addresses are no longer latched. The system can determine the status of the program operation by using I/O7 or I/O6. See "Write Operation Status" for information on these status bits. Any commands written to the device during the Embedded Program Algorithm are ignored. Programming is allowed in any sequence and across sector boundaries. A bit cannot be programmed from a "0" back to a "1 ". Attempting to do so may halt the operation and set I/O5 to "1", or cause the Data Polling algorithm to indicate the operation was successful. However, a succeeding read will show that the data is still "0". Only erase operations can convert a "0" to a "1". START Write Program Command Sequence Embedded Program algorithm in progress Data Poll from System Verify Data ? No Yes Increment Address Last Address ? Yes Programming Completed Note : See the appropriate Command Definitions table for program command sequence. Byte Program Command Sequence Programming is a four-bus-cycle operation. The program command sequence is initiated by writing two unlock write cycles, followed by the program set-up command. The program address and data are written next, which in turn initiate the Embedded Program algorithm. The system is not Confidential - 8 of 27 - Figure 1. Program Operation Rev.1.0. July 2019 AS29CF040-55CCIN Chip Erase Command Sequence Chip erase is a six-bus-cycle operation. The chip erase command sequence is initiated by writing two unlock cycles, followed by a set-up command. Two additional unlock write cycles are then followed by the chip erase command, which in turn invokes the Embedded Erase algorithm. The device does not require the system to preprogram prior to erase. The Embedded Erase algorithm automatically preprograms and verifies the entire memory for an all zero data pattern prior to electrical erase. The system is not required to provide any controls or timings during these operations. The Command Definitions table shows the address and data requirements for the chip erase command sequence. Any commands written to the chip during the Embedded Erase algorithm are ignored. The system can determine the status of the erase operation by using I/O7, I/O6, or I/O2. See "Write Operation Status" for information on these status bits. When the Embedded Erase algorithm is complete, the device returns to reading array data and addresses are no longer latched. Figure 2 illustrates the algorithm for the erase operation. See the Erase/Program Operations tables in "AC Characteristics" for parameters, and to the Chip/Sector Erase Operation Timings for timing waveforms. Sector Erase Command Sequence Sector erase is a six-bus-cycle operation. The sector erase command sequence is initiated by writing two unlock cycles, followed by a set-up command. Two additional unlock write cycles are then followed by the address of the sector to be erased, and the sector erase command. The Command Definitions table shows the address and data requirements for the sector erase command sequence. The device does not require the system to preprogram the memory prior to erase. The Embedded Erase algorithm automatically programs and verifies the sector for an all zero data pattern prior to electrical erase. The system is not required to provide any controls or timings during these operations. After the command sequence is written, a sector erase timeout of 50µs begins. During the time-out period, additional sector addresses and sector erase commands may be written. Loading the sector erase buffer may be done in any sequence, and the number of sectors may be from one sector to all sectors. The time between these additional cycles must be less than 50µs, otherwise the last address and command might not be accepted, and erasure may begin. It is recommended that processor interrupts be disabled during this time to ensure all commands are accepted. The interrupts can be re-enabled after the last Sector Erase command is written. If the time between additional sector erase commands can be assumed to be less than 50µs, the system need not monitor I/O3. Any command other than Sector Erase or Erase Suspend during the time-out period resets the device to reading array data. The system must rewrite the command sequence and any additional sector addresses and commands. The system can monitor I/O3 to determine if the sector erase timer has timed out. (See the " I/O3: Sector Erase Timer" section.) The time-out begins from the rising edge of the final WE pulse in the command sequence. Confidential - 9 of 27 - Once the sector erase operation has begun, only the Erase Suspend command is valid. All other commands are ignored. When the Embedded Erase algorithm is complete, the device returns to reading array data and addresses are no longer latched. The system can determine the status of the erase operation by using I/O7, I/O6, or I/O2. Refer to "Write Operation Status" for information on these status bits. Figure 2 illustrates the algorithm for the erase operation. Refer to the Erase/Program Operations tables in the "AC Characteristics" section for parameters, and to the Sector Erase Operations Timing diagram for timing waveforms. Erase Suspend/Erase Resume Commands The Erase Suspend command allows the system to interrupt a sector erase operation and then read data from, or program data to, any sector not selected for erasure. This command is valid only during the sector erase operation, including the 50µs time-out period during the sector erase command sequence. The Erase Suspend command is ignored if written during the chip erase operation or Embedded Program algorithm. Writing the Erase Suspend command during the Sector Erase time-out immediately terminates the time-out period and suspends the erase operation. Addresses are "don't cares" when writing the Erase Suspend command. When the Erase Suspend command is written during a sector erase operation, the device requires a maximum of 30µs to suspend the erase operation. However, when the Erase Suspend command is written during the sector erase time-out, the device immediately terminates the time-out period and suspends the erase operation. After the erase operation has been suspended, the system can read array data from or program data to any sector not selected for erasure. (The device "erase suspends" all sectors selected for erasure.) Normal read and write timings and command definitions apply. Reading at any address within erase-suspended sectors produces status data on I/O7 - I/O0. The system can use I/O7, or I/O6 and I/O2 together, to determine if a sector is actively erasing or is erase-suspended. See "Write Operation Status" for information on these status bits. After an erase-suspended program operation is complete, the system can once again read array data within nonsuspended sectors. The system can determine the status of the program operation using the I/O7 or I/O6 status bits, just as in the standard program operation. See "Write Operation Status" for more information. The system may also write the autoselect command sequence when the device is in the Erase Suspend mode. The device allows reading autoselect codes even at addresses within erasing sectors, since the codes are not stored in the memory array. When the device exits the autoselect mode, the device reverts to the Erase Suspend mode, and is ready for another valid operation. See "Autoselect Command Sequence" for more information. The system must write the Erase Resume command (address bits are "don't care") to exit the erase suspend mode and continue the sector erase operation. Further writes of the Resume command are ignored. Another Erase Suspend command can be written after the device has resumed erasing. Rev.1.0. July 2019 AS29CF040-55CCIN START Write Erase Command Sequence Data Poll from System No Embedded Erase algorithm in progress Data = FFh ? Yes Erasure Completed Note : 1. See the appropriate Command Definitions table for erase command sequences. 2. See "I/O3 : Sector Erase Timer" for more information. Figure 2. Erase Operation Confidential - 10 of 27 - Rev.1.0. July 2019 AS29CF040-55CCIN Table 4. AS29CF040-55CCIN Command Definitions Sequence (Note 1) Bus Cycles (Notes 2 - 4) Cycles Command First Second Addr Data Addr Data Third Fourth Fifth Sixth Addr Data Addr Data Addr Data Addr Data Read (Note 5) 1 RA RD Reset (Note 6) 1 XXX F0 Autoselect Manufacturer ID 4 555 AA 2AA 55 555 90 X00 37 (Note 7) Device ID 4 555 AA 2AA 55 555 90 X01 86 Continuation ID 4 555 AA 2AA 55 555 90 X03 7F Sector Protect Verify 4 (Note 8) 555 AA 2AA 55 555 90 SA 00 X02 01 Program 4 555 AA 2AA 55 555 A0 PA PD Chip Erase 6 555 AA 2AA 55 555 80 555 AA 2AA 55 555 10 Sector Erase 6 555 AA 2AA 55 555 80 555 AA 2AA 55 SA 30 Erase Suspend (Note 9) 1 XXX B0 Erase Resume (Note 10) 1 XXX 30 Legend: X = Don't care RA = Address of the memory location to be read. RD = Data read from location RA during read operation. PA = Address of the memory location to be programmed. Addresses latch on the falling edge of the WE or CE pulse, whichever happens later. PD = Data to be programmed at location PA. Data latches on the rising edge of WE or CE pulse, whichever happens first. SA = Address of the sector to be verified (in autoselect mode) or erased. Address bits A18 - A16 select a unique sector. Note: 1. See Table 1 for description of bus operations. 2. All values are in hexadecimal. 3. Except when reading array or autoselect data, all bus cycles are write operation. 4. Address bits A18 - A11 are don't cares for unlock and command cycles, unless SA or PA required. 5. No unlock or command cycles required when reading array data. 6. The Reset command is required to return to reading array data when device is in the autoselect mode, or if I/O5 goes high (while the device is providing status data). 7. The fourth cycle of the autoselect command sequence is a read cycle. 8. The data is 00h for an unprotected sector and 01h for a protected sector. See "Autoselect Command Sequence" for more information. 9. The system may read and program in non-erasing sectors, or enter the autoselect mode, when in the Erase Suspend mode. 10. The Erase Resume command is valid only during the Erase Suspend mode. Confidential - 11 of 27 - Rev.1.0. July 2019 AS29CF040-55CCIN Write Operation Status Several bits, I/O2, I/O3, I/O5, I/O6, and I/O7, are provided in the AS29CF040-55CCIN to determine the status of a write operation. Table 5 and the following subsections describe the functions of these status bits. I/O7, I/O6 and I/ O2 each offer a method for determining whether a program or erase operation is complete or in progress. These three bits are discussed first. START Read I/O7-I/O0 Address = VA I/O7: Data Polling The Data Polling bit, I/O7, indicates to the host system whether an Embedded Algorithm is in progress or completed, or whether the device is in Erase Suspend. Data Polling is valid after the rising edge of the final WE pulse in the program or erase command sequence. During the Embedded Program algorithm, the device outputs on I/O7 the complement of the datum programmed to I/O7. This I/O7 status also applies to programming during Erase Suspend. When the Embedded Program algorithm is complete, the device outputs the datum programmed to I/O7. The system must provide the program address to read valid status information on I/O7. If a program address falls within a protected sector, Data Polling on I/O7 is active for approximately 2µs, then the device returns to reading array data. During the Embedded Erase algorithm, Data Polling produces a "0" on I/O7. When the Embedded Erase algorithm is complete, or if the device enters the Erase Suspend mode, Data Polling produces a "1" on I/O7.This is analogous to the complement/true datum output described for the Embedded Program algorithm: the erase function changes all the bits in a sector to "1"; prior to this, the device outputs the "complement," or "0." The system must provide an address within any of the sectors selected for erasure to read valid status information on I/O7. After an erase command sequence is written, if all sectors selected for erasing are protected, Data Polling on I/O7 is active for approximately 100µs, then the device returns to reading array data. If not all selected sectors are protected, the Embedded Erase algorithm erases the unprotected sectors, and ignores the selected sectors that are protected. When the system detects I/O7 has changed from the complement to true data, it can read valid data at I/O7 - I/O0 on the following read cycles. This is because I/O7 may change asynchronously with I/O0 - I/O6 while Output Enable ( OE ) is asserted low. The Data Polling Timings (During Embedded Algorithms) figure in the "AC Characteristics" section illustrates this. Table 5 shows the outputs for Data Polling on I/O7. Figure 3 shows the Data Polling algorithm. Confidential - 12 of 27 - Yes I/O7 = Data ? No No I/O5 = 1? Yes Read I/O7 - I/O0 Address = VA Yes I/O7 = Data ? No FAIL PASS Note : 1. VA = Valid address for programming. During a sector erase operation, a valid address is an address within any sector selected for erasure. During chip erase, a valid address is any non-protected sector address. 2. I/O7 should be rechecked even if I/O5 = "1" because I/O7 may change simultaneously with I/O5. Figure 3. Data Polling Algorithm Rev.1.0. July 2019 AS29CF040-55CCIN I/O6: Toggle Bit I Toggle Bit I on I/O6 indicates whether an Embedded Program or Erase algorithm is in progress or complete, or whether the device has entered the Erase Suspend mode. Toggle Bit I may be read at any address, and is valid after the rising edge of the final WE pulse in the command sequence (prior to the program or erase operation), and during the sector erase time-out. During an Embedded Program or Erase algorithm operation, successive read cycles to any address cause I/O6 to toggle. (The system may use OE and CE to control the read cycles.) When the operation is complete, I/O6 stops toggling. After an erase command sequence is written, if all sectors selected for erasing are protected, I/O6 toggles for approximately 100µs, then returns to reading array data. If not all selected sectors are protected, the Embedded Erase algorithm erases the unprotected sectors, and ignores the selected sectors that are protected. The system can use I/O6 and I/O2 together to determine whether a sector is actively erasing or is erase-suspended. When the device is actively erasing (that is, the Embedded Erase algorithm is in progress), I/O6 toggles. When the device enters the Erase Suspend mode, I/O6 stops toggling. However, the system must also use I/O2 to determine which sectors are erasing or erase-suspended. Alternatively, the system can use I/O7 (see the subsection on " I/O7 : Data Polling"). If a program address falls within a protected sector, I/O6 toggles for approximately 2µs after the program command sequence is written, then returns to reading array data. I/O6 also toggles during the erase-suspend-program mode, and stops toggling once the Embedded Program algorithm is complete. The Write Operation Status table shows the outputs for Toggle Bit I on I/O6. Refer to Figure 4 for the toggle bit algorithm, and to the Toggle Bit Timings figure in the "AC Characteristics" section for the timing diagram. The I/O2 vs. I/O6 figure shows the differences between I/O2 and I/O6 in graphical form. See also the subsection on " I/O2: Toggle Bit II". I/O2: Toggle Bit II The "Toggle Bit II" on I/O2, when used with I/O6, indicates whether a particular sector is actively erasing (that is, the Embedded Erase algorithm is in progress), or whether that sector is erase-suspended. Toggle Bit II is valid after the rising edge of the final WE pulse in the command sequence. I/O2 toggles when the system reads at addresses within those sectors that have been selected for erasure. (The system may use OE and CE to control the read cycles.) But I/O2 cannot distinguish whether the sector is actively erasing or is erase-suspended. I/O6, by comparison, indicates whether the device is actively erasing, or is in Erase Suspend, but cannot distinguish which sectors are selected for erasure. Thus, both status bits are required for sector and mode information. Refer to Table 5 to compare outputs for I/O2 and I/O6. Figure 4 shows the toggle bit algorithm in flowchart form, and the section " I/O2: Toggle Bit II" explains the algorithm. See also the " I/O6: Toggle Bit I" subsection. Refer to the Toggle Bit Timings figure for the toggle bit timing diagram. The I/O2 Confidential - 13 of 27 - vs. I/O6 figure shows the differences between I/O2 and I/O6 in graphical form. Reading Toggle Bits I/O6, I/O2 Refer to Figure 4 for the following discussion. Whenever the system initially begins reading toggle bit status, it must read I/O7 - I/O0 at least twice in a row to determine whether a toggle bit is toggling. Typically, a system would note and store the value of the toggle bit after the first read. After the second read, the system would compare the new value of the toggle bit with the first. If the toggle bit is not toggling, the device has completed the program or erase operation. The system can read array data on I/O7 - I/O0 on the following read cycle. However, if after the initial two read cycles, the system determines that the toggle bit is still toggling, the system also should note whether the value of I/O5 is high (see the section on I/O5). If it is, the system should then determine again whether the toggle bit is toggling, since the toggle bit may have stopped toggling just as I/O5 went high. If the toggle bit is no longer toggling, the device has successfully completed the program or erase operation. If it is still toggling, the device did not complete the operation successfully, and the system must write the reset command to return to reading array data. The remaining scenario is that the system initially determines that the toggle bit is toggling and I/O5 has not gone high. The system may continue to monitor the toggle bit and I/O5 through successive read cycles, determining the status as described in the previous paragraph. Alternatively, it may choose to perform other system tasks. In this case, the system must start at the beginning of the algorithm when it returns to determine the status of the operation (top of Figure 4). I/O5: Exceeded Timing Limits I/O5 indicates whether the program or erase time has exceeded a specified internal pulse count limit. Under these conditions I/O5 produces a "1." This is a failure condition that indicates the program or erase cycle was not successfully completed. The I/O5 failure condition may appear if the system tries to program a "1 "to a location that is previously programmed to "0." Only an erase operation can change a "0" back to a "1." Under this condition, the device halts the operation, and when the operation has exceeded the timing limits, I/O5 produces a "1." Under both these conditions, the system must issue the reset command to return the device to reading array data. I/O3: Sector Erase Timer After writing a sector erase command sequence, the system may read I/O3 to determine whether or not an erase operation has begun. (The sector erase timer does not apply to the chip erase command.) If additional sectors are selected for erasure, the entire time-out also applies after each additional sector erase command. When the time-out is complete, I/O3 switches from "0" to "1." The system may ignore I/O3 if the system can guarantee that the time between additional sector erase commands will always be less than 50µs. See also the "Sector Erase Command Sequence" section. Rev.1.0. July 2019 AS29CF040-55CCIN After the sector erase command sequence is written, the system should read the status on I/O7 ( Data Polling) or I/O6 (Toggle Bit 1) to ensure the device has accepted the command sequence, and then read I/O3. If I/O3 is "1", the internally controlled erase cycle has begun; all further commands (other than Erase Suspend) are ignored until the erase operation is complete. If I/O3 is "0", the device will accept additional sector erase commands. To ensure the command has been accepted, the system software should check the status of I/O3 prior to and following each subsequent sector erase command. If I/O3 is high on the second status check, the last command might not have been accepted. Table 5 shows the outputs for I/O3. START Read I/O7-I/O0 Read I/O7-I/O0 Toggle Bit = Toggle ? (Note 1) No Yes No I/O5 = 1? Yes Read I/O7 - I/O0 Twice Toggle Bit = Toggle ? (Notes 1,2) No Yes Program/Erase Operation Not Commplete, Write Reset Command Program/Erase Operation Commplete Notes : 1. Read toggle bit twice to determine whether or not it is toggling. See text. 2. Recheck toggle bit because it may stop toggling as I/O5 changes to "1". See text. Figure 4. Toggle Bit Algorithm Confidential - 14 of 27 - Rev.1.0. July 2019 AS29CF040-55CCIN Table 5. Write Operation Status Operation Standard Mode Erase Suspend Mode I/O7 (Note 1) I/O6 I/O5 (Note 2) I/O3 I/O2 (Note 1) I/O7 Toggle 0 N/A No toggle 0 Toggle 0 1 Toggle 1 No toggle 0 N/A Toggle Data Data Data Data Data I/O7 Toggle 0 N/A N/A Embedded Program Algorithm Embedded Erase Algorithm Reading within Erase Suspended Sector Reading within Non-Erase Suspend Sector Erase-Suspend-Program Notes: 1. I/O7 and I/O2 require a valid address when reading status information. Refer to the appropriate subsection for further details. 2. I/O5 switches to “1” when an Embedded Program or Embedded Erase operation has exceeded the maximum timing limits. See “I/O5: Exceeded Timing Limits” for more information. Maximum Negative Input Overshoot 20ns 20ns +0.8V -0.5V -2.0V 20ns Maximum Positive Input Overshoot 20ns VCC+2.0V VCC+0.5V 2.0V 20ns Confidential - 15 of 27 - 20ns Rev.1.0. July 2019 AS29CF040-55CCIN DC Characteristics TTL/NMOS Compatible Parameter Parameter Description Test Description Min. Typ. Max. Unit Symbol ILI Input Load Current VIN = VSS to VCC. VCC = VCC Max ±1.0 µA ILIT A9 Input Load Current VCC = VCC Max, A9 = 12.5V 100 µA ILO Output Leakage Current VOUT = VSS to VCC. VCC = VCC Max ±1.0 µA ICC1 VCC Active Read Current CE = VIL, OE = VIH 20 30 mA CE = VIL, OE =VIH 30 40 mA CE = VIH 0.4 1.0 mA (Notes 1, 2) ICC2 VCC Active Write (Program/Erase) Current (Notes 2, 3, 4) ICC3 VCC Standby Current (Note 2) VIL Input Low Level -0.5 0.8 V VIH Input High Level 2.0 VCC+0.5 V VID Voltage for Autoselect 10.5 12.5 V 0.45 V VCC = 5.25 V and Sector Protect VOL Output Low Voltage IOL = 12mA, VCC = VCC Min VOH Output High Voltage IOH = -2.5 mA, VCC = VCC Min 2.4 V CMOS Compatible Parameter Description Parameter Test Description Min. Typ. Max. Unit Symbol ILI Input Load Current VIN = VSS to VCC, VCC = VCC Max ±1.0 µA ILIT A9 Input Load Current VCC = VCC Max, A9 = 12.5V 100 µA ILO Output Leakage Current VOUT = VSS to VCC, VCC = VCC Max ±1.0 µA ICC1 VCC Active Read Current CE = VIL, OE = VIH 20 30 mA ICC2 VCC Active Program/Erase Current CE = VIL, OE = VIH 30 40 mA CE = VCC ± 0.5 V 1 5 µA (Notes 1,2) (Notes 2,3,4) ICC3 VCC Standby Current (Notes 2, 5) VIL Input Low Level -0.5 0.8 V VIH Input High Level 0.7 x VCC VCC+0.3 V VID Voltage for Autoselect and Sector 10.5 12.5 V VOL Output Low Voltage IOL = 12.0 mA, VCC = VCC Min 0.45 V VOH1 Output High Voltage IOH = -2.5 mA, VCC = VCC Min 0.85 x VCC V IOH = -100 µA. VCC = VCC Min VCC-0.4 V VCC = 5.25 V Protect VOH2 Notes for DC characteristics (both tables): 1. The ICC current listed includes both the DC operation current and the frequency dependent component (at 6 MHz). The frequency component typically is less than 2 mA/MHz, with OE at VIH. 2. Maximum ICC specifications are tested with VCC = VCC max. 3. ICC active while Embedded Algorithm (program or erase) is in progress. 4. Not 100% tested. 5. For CMOS mode only, ICC3 = 20µA max at extended temperatures (> +85°C) Confidential - 16 of 27 - Rev.1.0. July 2019 AS29CF040-55CCIN AC Characteristics Read Only Operations Parameter Symbols Description JEDEC Std tAVAV tRC Read Cycle Time (Note 2) tAVQV tACC Address to Output Delay tELQV tCE Chip Enable to Output Delay tGLQV tOE Output Enable to Output Delay tOEH Output Enable Hold Time (Note 2) Speed Test Setup Unit -55 Min. 55 ns CE = VIL OE = VIL Max. 55 ns OE = VIL Max. 55 ns Max. 30 ns Read Min. 0 ns Toggle and Min. 10 ns Data Polling tEHQZ tDF Chip Enable to Output High Z (Notes 1,2) Max. 18 ns tGHQZ tDF Output Enable to Output High Z (Notes 1,2) Max. 18 ns tAXQX tOH Output Hold Time from Addresses, Min. 0 ns CE or OE , Whichever Occurs First Notes: 1. Output driver disable time. 2. Not 100% tested. Timing Waveforms for Read Only Operation tRC Addresses Addresses Stable tACC CE tDF tOE OE tOEH WE tCE High-Z Output tOH Output Valid High-Z 0V Confidential - 17 of 27 - Rev.1.0. July 2019 AS29CF040-55CCIN AC Characteristics Erase and Program Operations Parameter Symbols Description Speed Unit JEDEC Std tAVAV tWC Write Cycle Time (Note 1) Min. 55 ns tAVWL tAS Address Setup Time Min. 0 ns tWLAX tAH Address Hold Time Min. 40 ns tDVWH tDS Data Setup Time Min. 25 ns tWHDX tDH Data Hold Time Min. 0 ns tOES Output Enable Setup Time Min. 0 ns Read Recover Time Before Write Min. 0 ns -55 tGHWL tGHWL tELWL tCS CE Setup Time Min. 0 ns tWHEH tCH CE Hold Time Min. 0 ns tWLWH tWP Write Pulse Width Min. 30 ns tWHWL tWPH Write Pulse Width High Min. 20 ns Max. 50 µs ( OE high to WE low) tWHWH1 tWHWH1 Byte Programming Operation (Note 2) Typ. 35 µs tWHWH2 tWHWH2 Sector Erase Operation (Note 2) Typ. 2 sec VCC Set Up Time (Note 1) Min. 50 µs tVCS Notes: 1. Not 100% tested. 2. See the "Erase and Programming Performance" section for more information. Confidential - 18 of 27 - Rev.1.0. July 2019 AS29CF040-55CCIN Timing Waveforms for Program Operation Program Command Sequence (last two cycles) PA 555h PA tAH CE tCH ~ ~ tGHWL PA ~ ~ ~ ~ Addresses tAS ~ ~ tWC Read Status Data (last two cycles) OE ~ ~ tWP WE Data tWPH tDS tDH A0h PD Status ~ ~ tCS tWHWH1 DOUT ~ ~ tVCS VCC Note : PA = program addrss, PD = program data, Dout is the true data at the program address. Timing Waveforms for Chip/Sector Erase Operation Erase Command Sequence (last two cycles) SA 2AAh VA 555h for chip erase tAH CE ~ ~ tGHWL VA ~ ~ ~ ~ Addresses ~ ~ tAS tWC Read Status Data tCH OE ~ ~ tWP WE Data tWPH tDS 55h tDH 30h In Progress Complete 10h for chip erase ~ ~ tVCS tWHWH2 ~ ~ tCS VCC Note : SA = Sector Address. VA = Valid Address for reading status data. Confidential - 19 of 27 - Rev.1.0. July 2019 AS29CF040-55CCIN Timing Waveforms for Data Polling (During Embedded Algorithms) Addresses ~ ~ tRC VA tACC CE VA ~ ~ ~ ~ VA tCE tCH ~ ~ tOE OE tDF ~ ~ tOEH WE Complement I/O0 - I/O6 Status Data ~ ~ I/O7 Complement True Valid Data ~ ~ tOH Status Data True Valid Data High-Z High-Z Note : VA = Valid Address. Illustation shows first status cycle after command sequence, last status read cycle, and array data read cycle. Timing Waveforms for Toggle Bit (During Embedded Algorithms) Addresses ~ ~ tRC VA tACC CE VA VA ~ ~ ~ ~ VA tCE tCH tOE tOEH ~ ~ ~ ~ OE tDF WE I/O6 , I/O2 Valid Status Valid Status (first read) (second read) ~ ~ tOH Valid Status Valid Status (stop togging) Note: VA = Valid Address; not required for I/O6. Illustration shows first two status cycle after command sequence, last status read cycle, and array data read cycle. Confidential - 20 of 27 - Rev.1.0. July 2019 AS29CF040-55CCIN Timing Waveforms for I/O2 vs. I/O6 ~ ~ ~ ~ Erase Complete ~ ~ ~ ~ ~ ~ ~ ~ ~ ~ Erase ~ ~ Erase Suspend Read ~ ~ ~ ~ I/O2 ~ ~ I/O6 Erase Resume Erase Suspend Program Erase Suspend Read ~ ~ Erase Enter Erase Suspend Program ~ ~ ~ ~ Erase Suspend ~ ~ WE Enter Embedded Erasing I/O2 and I/O6 toggle with OE and CE Note : Both I/O6 and I/O2 toggle with OE or CE. See the text on I/O6 and I/O2 in the section "Write Operation Statue" for more information. AC Characteristics Erase and Program Operations Alternate CE Controlled Writes Description Parameter Symbols Speed Unit -55 JEDEC Std tAVAV tWC Write Cycle Time (Note 1) Min. tAVEL tAS Address Setup Time 55 ns Min. 0 ns ns tELAX tAH Address Hold Time Min. 40 tDVEH tDS Data Setup Time Min. 25 ns tEHDX tDH Data Hold Time Min. 0 ns tGHEL tGHEL Read Recover Time Before Write Min. 0 ns tWLEL tWS WE Setup Time Min. 0 ns tEHWH tWH WE Hold Time Min. 0 ns tELEH tCP Write Pulse Width Min. 30 ns tEHEL tCPH Write Pulse Width High Min. 20 ns tWHWH1 tWHWH1 Byte Programming Operation (Note 2) Typ. 35 µs tWHWH2 tWHWH2 Sector Erase Operation (Note 2) Typ. 2 sec Notes: 1. Not 100% tested. 2. See the "Erase and Programming Performance" section for more information. Confidential - 21 of 27 - Rev.1.0. July 2019 AS29CF040-55CCIN Timing Waveforms for Alternate CE Controlled Write Operation 555 for program 2AA for erase PA for program SA for sector erase 555 for chip erase ~ ~ Data Polling PA tWC ~ ~ Addresses tAS tAH ~ ~ tWH WE ~ ~ tGHEL OE tWHWH1 or 2 ~ ~ tCP tBUSY tCPH CE tWS tDS tDH I/O7 ~ ~ Data DOUT tRH A0 for program 55 for erase PD for program 30 for sector erase 10 for chip erase Note : 1. PA = Program Address, PD = Program Data, SA = Sector Address, I/O7 = Complement of Data Input, DOUT = Array Data. 2. Figure indicates the last two bus cycles of the command sequence. Erase and Programming Performance Parameter Typ. (Note 1) Max. (Note 2) Unit Sector Erase Time 2 8 sec Chip Erase Time 16 64 sec Byte Programming Time 35 300 µs Chip Programming Time (Note 3) 3.6 10.8 sec Comments Excludes 00h programming prior to erasure (Note 4) Excludes system-level overhead (Note 5) Notes: 1. Typical program and erase times assume the following conditions: 25°C, 5.0V VCC, 10,000 cycles. Additionally, programming typically assumes checkerboard pattern. 2. Under worst case conditions of 90°C, VCC = 4.5V (4.75V for -55), 100,000 cycles. 3. The typical chip programming time is considerably less than the maximum chip programming time listed, since most bytes program faster than the maximum byte program time listed. If the maximum byte program time given is exceeded, only then does the device set I/O5 = 1. See the section on I/O5 for further information. 4. In the pre-programming step of the Embedded Erase algorithm, all bytes are programmed to 00h before erasure. 5. System-level overhead is the time required to execute the four-bus-cycle command sequence for programming. See Table 4 for further information on command definitions. 6. The device has a guaranteed minimum erase and program cycle endurance of 100,000 cycles. Confidential - 22 of 27 - Rev.1.0. July 2019 AS29CF040-55CCIN Latch-up Characteristics Description Input Voltage with respect to VSS on all I/O pins VCC Current Min. Max. -1.0V VCC+1.0V -100 mA +100 mA Includes all pins except VCC. Test conditions: VCC = 5.0V, one pin at time. PLCC Capacitance Parameter Symbol CIN Parameter Description Input Capacitance Test Setup Typ. Max. Unit VIN=0 4 6 pF COUT Output Capacitance VOUT=0 8 12 pF CIN2 Control Pin Capacitance VPP=0 8 12 pF Notes: 1. Sampled, not 100% tested. 2. Test conditions TA = 25°C, f = 1.0MHz Data Retention Parameter Test Conditions Min Unit 150°C 10 Years 125°C 20 Years Minimum Pattern Data Retention Time Confidential - 23 of 27 - Rev.1.0. July 2019 AS29CF040-55CCIN Test Conditions Table 6. Test Specifications Test Condition -55 All others Output Load Unit 1 TTL gate Output Load Capacitance, CL(including jig capacitance) 30 100 pF Input Rise and Fall Times 5 20 ns 0.0 - 3.0 0.45 - 2.4 V Input timing measurement reference levels 1.5 0.8, 2.0 V Output timing measurement reference levels 1.5 0.8, 2.0 V Input Pulse Levels 5.0 V 2.7 KΩ Device Under Test CL Figure 7. Confidential Diodes = IN3064 or Equivalent 6.2 KΩ Test Setup - 24 of 27 - Rev.1.0. July 2019 AS29CF040-55CCIN Package Information PLCC 32L Outline Dimension unit: inches/mm HD D 13 5 E 1 HE 4 14 32 20 30 29 c A1 b e L A2 A 21 D b1 GD Symbol GE y θ Dimensions in inches Dimensions in mm Min Nom Max Min Nom Max A - - 0.134 - - 3.40 A1 0.0185 - - 0.47 - - A2 0.105 0.110 0.115 2.67 2.80 2.93 b1 0.026 0.028 0.032 0.66 0.71 0.81 b 0.016 0.018 0.021 0.41 0.46 0.54 C 0.008 0.010 0.014 0.20 0.254 0.35 D 0.547 0.550 0.553 13.89 13.97 14.05 E 0.447 0.450 0.453 11.35 11.43 11.51 e 0.044 0.050 0.056 1.12 1.27 1.42 GD 0.490 0.510 0.530 12.45 12.95 13.46 GE 0.390 0.410 0.430 9.91 10.41 10.92 HD 0.585 0.590 0.595 14.86 14.99 15.11 HE 0.485 0.490 0.495 12.32 12.45 12.57 L 0.075 0.090 0.095 1.91 2.29 2.41 y - - 0.003 - - 0.075 θ 0° - 10° 0° - 10° Notes: 1. Dimensions D and E do not include resin fins. 2. Dimensions GD & GE are for PC Board surface mount pad pitch design reference only. Confidential - 25 of 27 - Rev.1.0. July 2019 AS29CF040-55CCIN Ordering Information Part No. Access Time (ns) Active Read Current Typ. (mA) Program/Erase Current Typ. (mA) Standby Current Typ. (μA) AS29CF040-55CCIN 55 20 30 1 Confidential - 26 of 27 - Package 32Pin Pb-Free PLCC Rev.1.0. July 2019 AS29CF040-55CCIN PART NUMBERING SYSTEM AS Alliance Memory 29 Parallel NOR Flash C F040 -55 Voltage code Device Density Speed grade 55ns C=5.0V (4.5V~5.5V) 040=4Mbits CC 32Pin Pb-Free PLCC I N Industrial temp ROHS compliant Pb and (-40°C
+85°C) Halogen Free Alliance Memory, Inc. 511 Taylor Way, San Carlos, CA 94070 Tel: 650-610-6800 Fax: 650-620-9211 www.alliancememory.com Copyright © Alliance Memory All Rights Reserved © Copyright 2007 Alliance Memory, Inc. All rights reserved. Our three-point logo, our name and Intelliwatt are trademarks or registered trademarks of Alliance. All other brand and product names may be the trademarks of their respective companies. Alliance reserves the right to make changes to this document and its products at any time without notice. Alliance assumes no responsibility for any errors that may appear in this document. The data contained herein represents Alliance's best data and/or estimates at the time of issuance. Alliance reserves the right to change or correct this data at any time, without notice. If the product described herein is under development, significant changes to these specifications are possible. The information in this product data sheet is intended to be general descriptive information for potential customers and users, and is not intended to operate as, or provide, any guarantee or warrantee to any user or customer. Alliance does not assume any responsibility or liability arising out of the application or use of any product described herein, and disclaims any express or implied warranties related to the sale and/or use of Alliance products including liability or warranties related to fitness for a particular purpose, merchantability, or infringement of any intellectual property rights, except as express agreed to in Alliance's Terms and Conditions of Sale (which are available from Alliance). All sales of Alliance products are made exclusively according to Alliance's Terms and Conditions of Sale. The purchase of products from Alliance does not convey a license under any patent rights, copyrights; mask works rights, trademarks, or any other intellectual property rights of Alliance or third parties. Alliance does not authorize its products for use as critical components in life-supporting systems where a malfunction or failure may reasonably be expected to result in significant injury to the user, and the inclusion of Alliance products in such life-supporting systems implies that the manufacturer assumes all risk of such use and agrees to indemnify Alliance against all claims arising from such use. Confidential - 27 of 27 - Rev.1.0. July 2019