AS4C128M16D3LB-12BIN

AS4C128M16D3LB-12BIN Revision History 2G DDR3L AS4C128M16D3LB-12BIN 96ball FBGA PACKAGE Revision Rev 1.0 Details Preliminary datasheet Date Dec. 2017 Alliance Memory Inc. 511 Taylor Way, San Carlos, CA 94070 TEL: (650) 610-6800 FAX: (650) 620-9211 Alliance Memory Inc. reserves the right to change products or specification without notice Confidential - 1 of 86 - Rev.1.0 Dec. 2017 AS4C128M16D3LB-12BIN 128M x 16 bit DDR3L Synchronous DRAM (SDRAM) Advance (Rev. 1.0, Dec. /2017) Features Overview  JEDEC The 2Gb Double-Data-Rate-3L (DDR3L) DRAMs is double data rate architecture to achieve high-speed operation. It is internally configured as an eight bank DRAM. The 2Gb chip is organized as 16Mbit x 16 I/Os x 8 bank devices. These synchronous devices achieve high speed double-data-rate transfer rates of up to 1600 Mb/sec/pin for general applications. The chip is designed to comply with all key DDR3L DRAM key features and all of the control and address inputs are synchronized with a pair of externally supplied differential clocks. Inputs are latched at the cross point of differential clocks (CK rising and CK# falling). All I/Os are synchronized with differential DQS pair in a source synchronous fashion. These devices operate with a single 1.35V -0.067V / +0.1V power supply. Standard Compliant Power supplies: VDD & VDDQ = +1.35V (1.283V ~ 1.45V)   Backward compatible to VDD & VDDQ = +1.5V ±0.075V  Operating temperature: TC = -40~95°C (Industrial)  Supports JEDEC clock jitter specification  Fully synchronous operation Fast clock rate: 800MHz  Differential Clock, CK & CK#  Bidirectional differential data strobe - DQS & DQS# 8 internal banks for concurrent operation prefetch architecture  Pipelined internal architecture  Precharge & active power down  Programmable Mode & Extended Mode registers  Additive Latency (AL): 0, CL-1, CL-2  Programmable Burst lengths: 4, 8  Burst type: Sequential / Interleave  Output Driver Impedance Control  Average refresh period  8n-bit - 8192 cycles/64ms (7.8us at -40°C ≦ TC ≦ +85°C) - 8192 cycles/32ms (3.9us at +85°C ≦ TC ≦ +95°C)  Write Leveling Calibration  Dynamic ODT (Rtt_Nom & Rtt_WR)  RoHS compliant  Auto Refresh and Self Refresh  96-ball 9 x 13 x 1.2mm FBGA package  ZQ - Pb and Halogen Free Table 1. Ordering Information Product part No Org Temperature Max Clock (MHz) Package 800 96-ball FBGA AS4C128M16D3LB-12BIN 128M x 16 Industrial -40°C to 95°C Table 2. Speed Grade Information Speed Grade Clock Frequency CAS Latency tRCD (ns) tRP (ns) DDR3L-1600 800 MHz 11 13.75 13.75 Confidential - 2 of 86 - Rev.1.0 Dec. 2017 AS4C128M16D3LB-12BIN Figure 1. Ball Assignment (FBGA Top View) 1 2 3 A VDDQ DQ13 B VSSQ C … 7 8 9 DQ15 DQ12 VDDQ VSS VDD VSS UDQS# DQ14 VSSQ VDDQ DQ11 DQ9 UDQS DQ10 VDDQ D VSSQ VDDQ UDM DQ8 VSSQ VDD E VSS VSSQ DQ0 LDM VSSQ VDDQ F VDDQ DQ2 LDQS DQ1 DQ3 VSSQ G VSSQ DQ6 LDQS# VDD VSS VSSQ H VREFDQ VDDQ DQ4 DQ7 DQ5 VDDQ J NC VSS RAS# CK VSS NC K ODT VDD CAS# CK# VDD CKE L NC CS# WE# A10/AP ZQ NC M VSS BA0 BA2 NC VREFCA VSS N VDD A3 A0 A12/BC # BA1 VDD P VSS A5 A2 A1 A4 VSS R VDD A7 A9 A11 A6 VDD T VSS RESET# A13 NC A8 VSS Confidential - 3 of 86 - Rev.1.0 Dec. 2017 AS4C128M16D3LB-12BIN Figure 2. Block Diagram CK CK# CKE Row Decoder DLL CLOCK BUFFER 16M x 16 CELL ARRAY (BANK #0) Column Decoder CS# RAS# CAS# WE# Row Decoder COMMAND DECODER CONTROL SIGNAL GENERATOR Row Decoder RESET# A0 ~ A9 A11 A13 BA0 BA1 BA2 MODE REGISTER Row Decoder ADDRESS BUFFER ZQCL REFRESH COUNTER LDQS LDQS# UDQS UDQS# ZQ CAL ZQCS Column Decoder 16M x 16 CELL ARRAY (BANK #2) Column Decoder 16M x 16 CELL ARRAY (BANK #3) Column Decoder 16M x 16 CELL ARRAY (BANK #4) Column Decoder 16M x 16 CELL ARRAY (BANK #5) Column Decoder RZQ DATA STROBE BUFFER DQ Buffer Row Decoder VSSQ Row Decoder COLUMN COUNTER Row Decoder A10/AP A12/BC# 16M x 16 CELL ARRAY (BANK #1) 16M x 16 CELL ARRAY (BANK #6) Column Decoder DQ0 Row Decoder ~ DQ15 ODT Confidential - 4 of 86 - LDM UDM 16M x 16 CELL ARRAY (BANK #7) Column Decoder Rev.1.0 Dec. 2017 AS4C128M16D3LB-12BIN Figure 3. State Diagram This simplified State Diagram is intended to provide an overview of the possible state transitions and the commands to control them. In particular, situations involving more than one bank, the enabling or disabling of on-die termination, and some other events are not captured in full detail ZQCL ZQCL,ZQCS Active Power Down Idle REF ACT Precharge Power Down PD PD X E Bank Activating W D READ A Writing RE A AD WRITE TE RI WRITE Reading READ READ A WRITE A RE EA AD IT WR A P RE ,P Reading A RE EA PR Automatic Sequence Command Sequence PRE, PREA E, PR Writing Confidential Refreshing Activating RE ACT = Active PRE = Precharge PREA = Precharge All MRS = Mode Register Set REF = Refresh RESET = Start RESET Procedure Read = RD, RDS4, RDS8 Read A = RDA, RDAS4, RDAS8 Write = WR, WRS4, WRS8 Write A = WRA, WRAS4, WRAS8 ZQCL = ZQ Calibration Long ZQCS = ZQ Calibration Short PDE = Enter Power-down PDX = Exit Power-down SRE = Self-Refresh entry SRX = Self-Refresh exit MPR = Multi-Purpose Register MRS E PD DX P ZQ Calibration Self Refresh S SR RE X from any RESET state MRS,MPR, Write Leveling Initialization A Reset Procedure ITE Power On WR Power applied Precharging - 5 of 86 - Rev.1.0 Dec. 2017 AS4C128M16D3LB-12BIN Pad Descriptions Table 3. Pad Details Symbol Type Description CK, CK# Input Differential Clock: CK and CK# are driven by the system clock. All SDRAM input signals are sampled on the crossing of positive edge of CK and negative edge of CK#. Output (Read) data is referenced to the crossings of CK and CK# (both directions of crossing). CKE Input Clock Enable: CKE activates (HIGH) and deactivates (LOW) the CK signal. If CKE goes LOW synchronously with clock, the internal clock is suspended from the next clock cycle and the state of output and burst address is frozen as long as the CKE remains LOW. When all banks are in the idle state, deactivating the clock controls the entry to the Power Down and Self Refresh modes. BA0-BA2 Input Bank Address: BA0-BA2 define to which bank the BankActivate, Read, Write, or Bank Precharge command is being applied. A0-A13 Input Address Inputs: Provide the row address (A0-13) for Active commands and the column address (A0-9) for Read/Write commands to select one location out of the memory array in the respective bank. (A10/AP and A12/BC# have additional functions). The address inputs also provide the op-code during Mode Register Set commands. A10/AP Input Auto-Precharge: A10 is sampled during Read/Write commands to determine whether Autoprecharge should be performed to the accessed bank after the Read/Write operation. (HIGH: Autoprecharge; LOW: no Autoprecharge). A10 is sampled during a Precharge command to determine whether the Precharge applies to one bank (A10 LOW) or all banks (A10 HIGH). A12/BC# Input Burst Chop: A12/BC# is sampled during Read and Write commands to determine if burst chop (on the fly) will be performed. (HIGH - no burst chop; LOW - burst chopped). CS# Input Chip Select: CS# enables (sampled LOW) and disables (sampled HIGH) the command decoder. All commands are masked when CS# is sampled HIGH. It is considered part of the command code. RAS# Input Row Address Strobe: The RAS# signal defines the operation commands in conjunction with the CAS# and WE# signals and is latched at the crossing of positive edges of CK and negative edge of CK#. When RAS# and CS# are asserted "LOW" and CAS# is asserted "HIGH" either the BankActivate command or the Precharge command is selected by the WE# signal. When the WE# is asserted "HIGH" the BankActivate command is selected and the bank designated by BA is turned on to the active state. When the WE# is asserted "LOW" the Precharge command is selected and the bank designated by BA is switched to the idle state after the precharge operation. CAS# Input Column Address Strobe: The CAS# signal defines the operation commands in conjunction with the RAS# and WE# signals and is latched at the crossing of positive edges of CK and negative edge of CK#. When RAS# is held "HIGH" and CS# is asserted "LOW" the column access is started by asserting CAS# "LOW". Then, the Read or Write command is selected by asserting WE# “HIGH" or “LOW". WE# Input Write Enable: The WE# signal defines the operation commands in conjunction with the RAS# and CAS# signals and is latched at the crossing of positive edges of CK and negative edge of CK#. The WE# input is used to select the BankActivate or Precharge command and Read or Write command. LDQS, Input / LDQS# Output Bidirectional Data Strobe: Specifies timing for Input and Output data. Read Data Strobe is edge triggered. Write Data Strobe provides a setup and hold time for data and DQM. LDQS is for DQ0~7, UDQS is for DQ8~15. The data strobes LDOS and UDQS are paired with LDQS# and UDQS# to provide differential pair signaling to the system during both reads and writes. UDQS UDQS# LDM, UDM Confidential Input Data Input Mask: Input data is masked when DM is sampled HIGH during a write cycle. LDM masks DQ0-DQ7, UDM masks DQ8-DQ15. - 6 of 86 - Rev.1.0 Dec. 2017 AS4C128M16D3LB-12BIN DQ0-DQ15 Input / Output Data I/O: The DQ0-DQ15 input and output data are synchronized with positive and negative edges of DQS and DQS#. TheI/Os are byte-maskable during Writes. ODT Input On Die Termination: ODT (registered HIGH) enables termination resistance internal to the DDR3L SDRAM. When enabled, ODT is applied to each DQ, DQS, DQS#. The ODT pin will be ignored if Mode-registers, MR1and MR2, are programmed to disable RTT. RESET# Input Active Low Asynchronous Reset: Reset is active when RESET# is LOW, and inactive when RESET# is HIGH. RESET# must be HIGH during normal operation. RESET# is a CMOS rail to rail signal with DC high and low at 80% and 20% of VDD. VDD Supply Power Supply: +1.35V -0.067V / +0.1V. VSS Supply Ground VDDQ Supply DQ Power: +1.35V -0.067V / +0.1V. VSSQ Supply DQ Ground VREFCA Supply Reference voltage for CA VREFDQ Supply Reference voltage for DQ ZQ Supply Reference pin for ZQ calibration. NC - Confidential No Connect: These pins should be left unconnected. - 7 of 86 - Rev.1.0 Dec. 2017 AS4C128M16D3LB-12BIN Operation Mode Truth Table The following tables provide a quick reference of available DDR3L SDRAM commands, including CKE powerdown modes and bank-to-bank commands. Table 4. Truth Table (Note (1), (2)) Command State CKEn-1(3) CKEn DM BA0-2 A10/AP A0-9, 11, 13 Idle(4) H H X V Single Bank Precharge Any H H X V L V All Banks Precharge Any H H X V H Write (Fixed BL8 or BC4) Active(4) H H X V L Write (BC4, on the fly) Active(4) H H X V Write (BL8, on the fly) Active(4) H H X Active(4) H H Active(4) H Active(4) Read (Fixed BL8 or BC4) A12/BC# RAS# CAS# WE# L H H V L L H L V V L L H L V V L H L L L V L L H L L V L V H L H L L X V H V V L H L L H X V H V L L H L L H H X V H V H L H L L Active(4) H H X V L V V L H L H Read (BC4, on the fly) Active(4) H H X V L V L L H L H Read (BL8, on the fly) Active(4) H H X V L V H L H L H Active(4) H H X V H V V L H L H Active(4) H H X V H V L L H L H Active(4) H H X V H V H L H L H (Extended) Mode Register Set Idle H H X V L L L L No-Operation Any H H X V V V V L H H H Device Deselect Any H H X X X X X H X X X Refresh Idle H H X V V V V L L L H SelfRefresh Entry Idle H L X V V V V L L L H X X X X H X X X V V V V L H H H X X X X H X X X V V V V L H H H X X X X H X X X V V V V L H H H Write with Autoprecharge (Fixed BL8 or BC4) Write with Autoprecharge (BC4, on the fly) Write with Autoprecharge (BL8, on the fly) Read with Autoprecharge (Fixed BL8 or BC4) Read with Autoprecharge (BC4, on the fly) Read with Autoprecharge (BL8, on the fly) SelfRefresh Exit Idle L H X Power Down Mode Entry Idle H L X OP code Power Down Mode Exit Any L H Data Input Mask Disable Active H X L X X X X X X X X Data Input Mask Enable(5) Active H X H X X X X X X X X Idle H H X X H X X L H H L X L H H L ZQ Calibration Long X Row address CS# L BankActivate Idle H H X X L X NOTE 1: V=Valid data, X=Don't Care, L=Low level, H=High level NOTE 2: CKEn signal is input level when commands are provided. NOTE 3: CKEn-1 signal is input level one clock cycle before the commands are provided. NOTE 4: These are states of bank designated by BA signal. NOTE 5: LDM and UDM can be enabled respectively. ZQ Calibration Short Confidential - 8 of 86 - Rev.1.0 Dec. 2017 AS4C128M16D3LB-12BIN Functional Description The DDR3L SDRAM is a high-speed dynamic random access memory internally configured as an eight-bank DRAM. The DDR3L SDRAM uses an 8n prefetch architecture to achieve high speed operation. The 8n Prefetch architecture is combined with an interface designed to transfer two data words per clock cycle at the I/O pins. A single read or write operation for the DDR3L SDRAM consists of a single 8n-bit wide, four clock data transfer at the internal DRAM core and two corresponding n-bit wide, one-half clock cycle data transfers at the I/O pins. Read and write operation to the DDR3L SDRAM are burst oriented, start at a selected location, and continue for a burst length of eight or a ‘chopped’ burst of four in a programmed sequence. Operation begins with the registration of an Active command, which is then followed by a Read or Write command. The address bits registered coincident with the Active command are used to select the bank and row to be activated (BA0-BA2 select the bank; A0-A13 select the row). The address bit registered coincident with the Read or Write command are used to select the starting column location for the burst operation, determine if the auto precharge command is to be issued (via A10), and select BC4 or BL8 mode ‘on the fly’ (via A12) if enabled in the mode register. Prior to normal operation, the DDR3L SDRAM must be powered up and initialized in a predefined manner. The following sections provide detailed information covering device reset and initialization, register definition, command descriptions and device operation. Figure 4. Reset and Initialization Sequence at Power-on Ramping CK# Ta Tb CK VDD VDDQ Tc Td Te Tf Tg Th Ti Tj Tk tCKSRX T=200μs T=500μs RESET# Tmin=10ns tIS CKE tDLLK tIS COMMAND Note 1 BA tXPR tMRD tMRD tMRD tMOD MRS MRS MRS MRS MR2 MR3 MR1 MR0 tZQinit ZQCL Note 1 VALID tIS ODT VALID tIS Static LOW in case RTT_Nom is enabled at time Tg, otherwise static HIGH or LOW VALID RTT NOTE 1. From time point "Td" until "Tk " NOP or DES commands must be applied between MRS and ZQCL commands. TIME BREAK Confidential - 9 of 86 - Rev.1.0 Don't Care Dec. 2017 AS4C128M16D3LB-12BIN Power-up and Initialization The Following sequence is required for POWER UP and Initialization 1. Apply power (RESET# is recommended to be maintained below 0.2 x VDD, all other inputs may be undefined). RESET# needs to be maintained for minimum 200us with stable power. CKE is pulled “Low” anytime before RESET# being de-asserted (min. time 10ns). The power voltage ramp time between 300mV to VDDmin must be no greater than 200ms; and during the ramp, VDD>VDDQ and (VDD-VDDQ)