256M DDR2 -AS4C16M16D2
Revision History
AS4ϭϲDϭϲϮ - ϴϰ-ball FBGA PACKAGE
Revision
Rev 1.0
Details
Preliminary datasheet
Date
DĂLJ201ϱ
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- 1/66 -
Rev.1.0
May 2015
256M DDR2 -AS4C16M16D2
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16M x 16 bit DDRII Synchronous DRAM (SDRAM)
Advanced (Rev. 1.0, Ma\/201)
Features
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- 2/66 -
Rev.1.0
May 2015
256M DDR2 -AS4C16M16D2
Overview
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- 3/66 -
Rev.1.0
May 2015
256M DDR2 -AS4C16M16D2
Table . Speed Grade Information
6SHHG*UDGH
Clock Frequency
CAS Latency
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tRCD (ns)
tRP (ns)
Table . Ordering Information
Part Number
2UJ
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- 4/66 -
Rev.1.0
May 2015
256M DDR2 -AS4C16M16D2
Figure 1. Ball Assignment (FBGA Top View)
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- 5/66 -
VDD
VSS
Rev.1.0
May 2015
256M DDR2 -AS4C16M16D2
Figure 2. Block Diagram
CK
CK#
DLL
CLOCK
BUFFER
COMMAND
DECODER
A10/AP
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MODE
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4M x 16
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A11
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CS#
RAS#
CAS#
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Row
Decoder
CKE
- 6/66 -
4M x 16
CELL ARRAY
(BANK #3)
Column Decoder
Rev.1.0
May 2015
256M DDR2 -AS4C16M16D2
Figure 3. State Diagram
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- 7/66 -
Rev.1.0
May 2015
256M DDR2 -AS4C16M16D2
Ball Descriptions
Table 3. Ball Descriptions
Symbol
Type
Description
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Data Input Mask: ,QSXWGDWDLVPDVNHGZKHQ'0LVVDPSOHG+,*+GXULQJDZULWHF\FOH
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6XSSO\ Power Supply:9±9
- 8/66 -
Rev.1.0
May 2015
256M DDR2 -AS4C16M16D2
966
6XSSO\ Ground
9''/
6XSSO\ DLL Power Supply:9±9
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6XSSO\ DLL Ground
9''4
6XSSO\ DQ Power: 9±9
9664
6XSSO\ DQ Ground
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6XSSO\ Reference Voltage for Inputs:
9''4
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Confidential
No Connect:7KHVHSLQVVKRXOGEHOHIWXQFRQQHFWHG
- 9/66 -
Rev.1.0
May 2015
256M DDR2 -AS4C16M16D2
Operation Mode
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Table 4. Truth Table (Note (1), (2))
Command
State
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Confidential
- 10/66 -
Rev.1.0
May 2015
256M DDR2 -AS4C16M16D2
Functional Description
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- 11/66 -
Rev.1.0
May 2015
256M DDR2 -AS4C16M16D2
! Mode Register Set (MRS)
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Table 5. Mode Register Bitmap
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- 14/66 -
Rev.1.0
May 2015
256M DDR2 -AS4C16M16D2
EMR(3)
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GHILQHGWKHUHIRUHWKHH[WHQGHGPRGHUHJLVWHUPXVWEHSURJUDPPHGGXULQJLQLWLDOL]DWLRQIRUSURSHURSHUDWLRQ
Table 8. Extended Mode Register EMR (3) Bitmap
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- 15/66 -
Rev.1.0
May 2015
256M DDR2 -AS4C16M16D2
! Off-chip drive (OCD) impedance adjustment
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VKRXOGEHFDUHIXOO\FRQWUROOHGGHSHQGLQJRQV\VWHPHQYLURQPHQW
Figure 4. OCD impedance adjustment sequence
Before entering OCD impedance adjustment, all MR should be programmed and
ODT should be carefully controlled depending on system environment
Start
EMRS:OCD calibration mode exit
EMRS:Drive(1)
DQ &DQS HIGH;DQS# LOW
Test
EMRS:Drive(0)
DQ &DQS LOW;DQS# HIGH
ALL OK
ALL OK
Test
EMRS:OCD calibration mode exit
EMRS:OCD calibration mode exit
EMRS:Enter Adjust Mode
EMRS:Enter Adjust Mode
BL=4 code input to all DQs
Inc, Dec, or NOP
BL=4 code input to all DQs
Inc, Dec, or NOP
EMRS:OCD calibration mode exit
EMRS:OCD calibration mode exit
EMRS:OCD calibration mode exit
End
Confidential
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Rev.1.0
May 2015
256M DDR2 -AS4C16M16D2
Extended mode register for OCD impedance adjustment
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Table 9. OCD drive mode program
A9
A8
A7
operation
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LVLVVXHG$/IURPSUHYLRXVO\VHWYDOXHPXVWEHDSSOLHG
Table 10. OCD adjust mode program
4bit burst code inputs to all DQs
DT0
DT1
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Pull-up driver strength
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- 17/66 -
Operation
Pull-down driver strength
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Rev.1.0
May 2015
256M DDR2 -AS4C16M16D2
! ODT (On Die Termination)
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Figure 17.2. Posted CAS# operation: AL=0
Read followed by a write to the same bank
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Rev.1.0
May 2015
256M DDR2 -AS4C16M16D2
Figure 18. Data output (read) timing
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Figure 19.1. Burst read operation: RL=5 (AL=2, CL=3, BL=4)
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Figure 19.2. Burst read operation: RL=3 (AL=0 and CL=3, BL=8)
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- 45/66 -
'RXW$
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Rev.1.0
May 2015
256M DDR2 -AS4C16M16D2
Figure 20. Burst read followed by burst write: RL=5, WL= (RL-1) =4, BL=4
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NOTE : The minimum time from the burst read command to the burst write command is defined by a read-to-writeturn-around-time, which is 4 clocks in case of BL = 4 operation, 6 clocks in case of BL = 8 operation.
Figure 21. Seamless burst read operation: RL=5, AL=2, CL=3, BL=4
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NOTE : The seamless burst read operation is supported by enabling a read command at every other clock for BL =
4 operation, and every 4 clock for BL =8 operation. This operation is allowed regardless of same or different banks
as long as the banks are activated.
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Rev.1.0
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256M DDR2 -AS4C16M16D2
Figure 22. Read burst interrupt timing: (CL=3, AL=0, RL=3, BL=8)
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NOTE 1: Read burst interrupt function is only allowed on burst of 8. Burst interrupt of 4 is prohibited.
NOTE 2: Read burst of 8 can only be interrupted by another Read command. Read burst interruption by Write
command or Precharge command is prohibited.
NOTE 3: Read burst interrupt must occur exactly two clocks after previous Read command. Any other Read burst
interrupt timings are prohibited.
NOTE 4: Read burst interruption is allowed to any bank inside DRAM.
NOTE 5: Read burst with Auto Precharge enabled is not allowed to interrupt.
NOTE 6: Read burst interruption is allowed by another Read with Auto Precharge command.
NOTE 7: All command timings are referenced to burst length set in the mode register. They are not referenced to
actual burst. For example, Minimum Read to Precharge timing is AL+BL/2 where BL is the burst length set in the
mode register and not the actual burst (which is shorter because of interrupt).
Figure 23. Data input (write) timing
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- 47/66 -
'0LQ
9,/GF
Rev.1.0
May 2015
256M DDR2 -AS4C16M16D2
Figure 24.1. Burst write operation: RL=5 (AL=2, CL=3), WL=4, BL=4
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Figure 24.2. Burst write operation: RL=3 (AL=0, CL=3), WL=2, BL=4
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- 48/66 -
Rev.1.0
May 2015
256M DDR2 -AS4C16M16D2
Figure 25. Burst write followed by burst read:
RL=5 (AL=2, CL=3, WL=4, tWTR=2, BL=4)
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NOTE : The minimum number of clock from the burst write command to the burst read command is [CL-1 + BL/2 + tWTR].
This tWTR is not a write recovery time (tWR) but the time required to transfer the 4 bit write data from the input buffer into
sense amplifiers in the array. tWTR is defined in the timing parameter table of this standard.
Figure 26. Seamless burst write operation RL=5, WL=4, BL=4
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NOTE : The seamless burst write operation is supported by enabling a write command every other clock for
BL= 4 operation, every four clocks for BL = 8 operation. This operation is allowed regardless of same or
different banks as long as the banks are activated.
Confidential
- 49/66 -
Rev.1.0
May 2015
256M DDR2 -AS4C16M16D2
Figure 27. Write burst interrupt timing: (CL=3, AL=0, RL=3, WL=2, BL=8)
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NOTE 1: Write burst interrupt function is only allowed on burst of 8. Burst interrupt of 4 is prohibited.
NOTE 2: Write burst of 8 can only be interrupted by another Write command. Write burst interruption by Read command or
Precharge command is prohibited.
NOTE 3: Write burst interrupt must occur exactly two clocks after previous Write command. Any other Write burst interrupt
timings are prohibited.
NOTE 4: Write burst interruption is allowed to any bank inside DRAM.
NOTE 5: Write burst with Auto Precharge enabled is not allowed to interrupt.
NOTE 6: Write burst interruption is allowed by another Write with Auto Precharge command.
NOTE 7: All command timings are referenced to burst length set in the mode register. They are not referenced to actual
burst. For example, minimum Write to Precharge timing is WL + BL/2 + tWR where tWR starts with the rising clock after the
uninterrupted burst end and not from the end of actual burst end.
Confidential
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Rev.1.0
May 2015
256M DDR2 -AS4C16M16D2
Figure 28. Write data mask
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Confidential
- 51/66 -
Rev.1.0
May 2015
256M DDR2 -AS4C16M16D2
Figure 29.1. Burst read operation followed by precharge:
(RL=4, AL=1, CL=3, BL=4, tRTP 2 clocks)
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Figure 29.2.Burst read operation followed by precharge:
(RL=4, AL=1, CL=3, BL=8, tRTP2 clocks)
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- 52/66 -
Rev.1.0
May 2015
256M DDR2 -AS4C16M16D2
Figure 29.3. Burst read operation followed by precharge:
(RL=5, AL=2, CL=3, BL=4, tRTP2 clocks)
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Figure 29.4. Burst read operation followed by precharge:
(RL=6, AL=2, CL=4, BL=4, tRTP2 clocks)
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Rev.1.0
May 2015
256M DDR2 -AS4C16M16D2
Figure 29.5. Burst read operation followed by precharge:
(RL=4, AL=0, CL=4, BL=8, tRTP>2 clocks)
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Rev.1.0
May 2015
256M DDR2 -AS4C16M16D2
Figure 30.2. Burst write followed by precharge: WL= (RL-1) =4
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3UHFKDUJHEHJLQVKHUH
Rev.1.0
May 2015
256M DDR2 -AS4C16M16D2
Figure 31.2. Burst read operation with auto precharge:
(RL=4, AL=1, CL=3, BL=4, tRTP>2 clocks)
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Figure 31.3. Burst read operation with auto precharge followed by activation to the same
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Rev.1.0
May 2015
256M DDR2 -AS4C16M16D2
Figure 31.4. Burst read operation with auto precharge followed by an activation to the same
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Figure 32.1. Burst write with auto-precharge (tRC Limit): WL=2, WR=2, BL=4, tRP=3
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Rev.1.0
May 2015
256M DDR2 -AS4C16M16D2
Figure 32.2. Burst write with auto-precharge (WR+tRP): WL=4, WR=2, BL=4, tRP=3
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256M DDR2 -AS4C16M16D2
Figure 34. Self refresh operation
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Confidential
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Rev.1.0
May 2015
256M DDR2 -AS4C16M16D2
Figure 36.2.CKE intensive environment
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Figure 37. Read to power-down entry
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May 2015
256M DDR2 -AS4C16M16D2
Figure 38. Read with autoprecharge to power-down entry
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- 61/66 -
Rev.1.0
May 2015
256M DDR2 -AS4C16M16D2
Figure 40. Write with autoprecharge to power-down entry
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Figure 41. Refresh command to power-down entry
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Rev.1.0
May 2015
256M DDR2 -AS4C16M16D2
Figure 42. Active command to power-down entry
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Figure 43. Precharge/precharge-all command to power-down entry
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Rev.1.0
May 2015
256M DDR2 -AS4C16M16D2
Figure 45. Asynchronous CKE LOW event
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May 2015
256M DDR2 -AS4C16M16D2
Figure 47. 84-Ball TFBGA Package Outline Drawing Information
PIN A1 INDEX
Top View
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Side View
DETAIL : "A"
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Dimension in inch
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- 65/66 -
Dimension in mm
Min
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Rev.1.0
May 2015
256M DDR2 -AS4C16M16D2
PART NUMBERING SYSTEM
AS4C
DRAM
6MD
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Alliance Memory, Inc.
511 Taylor Way,
San Carlos, CA 94070
Tel: 650-610-6800
Fax: 650-620-9211
www.alliancememory.com
Copyright © Alliance Memory
All Rights Reserved
© Copyright 2007 Alliance Memory, Inc. All rights reserved. Our three-point logo, our name and Intelliwatt are
trademarks or registered trademarks of Alliance. All other brand and product names may be the trademarks of their
respective companies. Alliance reserves the right to make changes to this document and its products at any time
without notice. Alliance assumes no responsibility for any errors that may appear in this document. The data
contained herein represents Alliance's best data and/or estimates at the time of issuance. Alliance reserves the right
to change or correct this data at any time, without notice. If the product described herein is under development,
significant changes to these specifications are possible. The information in this product data sheet is intended to be
general descriptive information for potential customers and users, and is not intended to operate as, or provide, any
guarantee or warrantee to any user or customer. Alliance does not assume any responsibility or liability arising out of
the application or use of any product described herein, and disclaims any express or implied warranties related to the
sale and/or use of Alliance products including liability or warranties related to fitness for a particular purpose,
merchantability, or infringement of any intellectual property rights, except as express agreed to in Alliance's Terms
and Conditions of Sale (which are available from Alliance). All sales of Alliance products are made exclusively
according to Alliance's Terms and Conditions of Sale. The purchase of products from Alliance does not convey a
license under any patent rights, copyrights; mask works rights, trademarks, or any other intellectual property rights of
Alliance or third parties. Alliance does not authorize its products for use as critical components in life-supporting
systems where a malfunction or failure may reasonably be expected to result in significant injury to the user, and the
inclusion of Alliance products in such life-supporting systems implies that the manufacturer assumes all risk of such
use and agrees to indemnify Alliance against all claims arising from such use.
Confidential
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Rev.1.0
May 2015