AS4C32M16D1-5TCN

AS4C32M16D1 32M x 16 bit DDR Synchronous DRAM (SDRAM) Alliance Memory Confidential Advanced (Rev. 1.1, July / 2011) Features Overview Fast clock rate: 200MHz Differential Clock CK & CK Bi-directional DQS DLL enable/disable by EMRS Fully synchronous operation Internal pipeline architecture Four internal banks, 8M x 16-bit for each bank Programmable Mode and Extended Mode registers - CAS Latency: 2, 2.5, 3 - Burst length: 2, 4, 8 - Burst Type: Sequential & Interleaved  Individual byte-write mask control  DM Write Latency = 0  Auto Refresh and Self Refresh  8192 refresh cycles / 64ms  Operating temperature range - Commercial (0 ~ 70°C) - Industrial (-40 ~ 85°C)  Precharge & active power down  Power supplies: VDD & VDDQ = 2.5V ± 0.2V  Interface: SSTL_2 I/O Interface  Package: 66 Pin TSOP II, 0.65mm pin pitch - Pb and Halogen free The 512Mb DDR AS4C32M16D1 SDRAM is a highspeed CMOS double data rate synchronous DRAM containing 512 Mbits. It is internally configured as a quad 8M x 16 DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CK). Data outputs occur at both rising edges of CK and CK .d Read and write accesses to the SDRAM are burst oriented; accesses start at a selected location and continue for a programmed number of locations in a programmed sequence. Accesses begin with the registration of a BankActivate command which is then followed by a Read or Write command. The DDR SDRAM provides programmable Read or Write burst lengths of 2, 4, or 8. An auto precharge function may be enabled to provide a self-timed row precharge that is initiated at the end of the burst sequence. The refresh functions, either Auto or Self Refresh are easy to use. In addition, The DDR AS4C32M16D1 features programmable DLL option. By having a programmable mode register and extended mode register, the system can choose the most suitable modes to maximize its performance. These devices are well suited for applications requiring high memory bandwidth and high performance.         Table 1.Ordering Information Temperature Temp Range Part Number Clock Data Rate Package 0 ~ 70°C AS4C32M16D1-5TCN 200MHz 400Mbps/pin 66pin TSOPII Commercial Industrial -40 ~ 85°C AS4C32M16D1-5TIN 200MHz 400Mbps/pin 66pin TSOPII T: indicates TSOP II package C: indicates Commercial temp. I: indicates Industrial temp. N: indicates lead free ROHS Confidential 1 Rev.1.1 July /2011 AS4C32M16D1 Figure 1. Pin Assignment (Top View) VDD DQ0 VDDQ DQ1 DQ2 VSSQ DQ3 DQ4 VDDQ DQ5 DQ6 VSSQ DQ7 NC VDDQ LDQS NC VDD NC LDM WE CAS RAS CS NC BA0 BA1 A10/AP A0 A1 A2 A3 VDD Confidential 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 66 65 64 63 62 61 60 59 58 57 56 55 54 53 52 51 50 49 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 2 VSS DQ15 VSSQ DQ14 DQ13 VDDQ DQ12 DQ11 VSSQ DQ10 DQ9 VDDQ DQ8 NC VSSQ UDQS NC VREF VSS UDM CK CK CKE NC A12 A11 A9 A8 A7 A6 A5 A4 VSS Rev.1.1 July /2011 AS4C32M16D1 Figure 2. Block Diagram CK CK DLL CLOCK BUFFER COMMAND DECODER A10/AP COLUMN COUNTER CONTROL SIGNAL GENERATOR MODE REGISTER 8M x 16 CELL ARRAY (BANK #0) Column Decoder Row Decoder CS RAS CAS WE Row Decoder CKE 8M x 16 CELL ARRAY (BANK #1) Column Decoder ~ A9 A11 A12 BA0 BA1 Row Decoder ADDRESS BUFFER A0 REFRESH COUNTER DATA STROBE BUFFER LDQS UDQS DQ0 8M x 16 CELL ARRAY (BANK #2) Column Decoder DQ Buffer Row Decoder ~ DQ15 LDM UDM Alliance Memory Confidential 3 8M x 16 CELL ARRAY (BANK #3) Column Decoder Rev.1.1 July /2011 AS4C32M16D1 Pin Descriptions Table 1. Pin Details Symbol Type Description CK, CK Input Differential Clock: CK and CK are differential clock inputs. All address and control input signals are sampled on the crossing of the positive edge of CK and negative edge of CK . Input and output data is referenced to the crossing of CK and CK (both directions of the crossing) CKE Input Clock Enable: CKE activates (HIGH) and deactivates (LOW) the CK signal. If CKE goes low synchronously with clock, the internal clock is suspended from the next clock cycle and the state of output and burst address is frozen as long as the CKE remains low. When all banks are in the idle state, deactivating the clock controls the entry to the Power Down and Self Refresh modes. BA0, BA1 Input Bank Activate: BA0 and BA1 define to which bank the BankActivate, Read, Write, or BankPrecharge command is being applied. A0-A12 Input Address Inputs: A0-A12 are sampled during the BankActivate command (row address A0-A12) and Read/Write command (column address A0-A9 with A10 defining Auto Precharge). CS Input Chip Select: CS enables (sampled LOW) and disables (sampled HIGH) the command decoder. All commands are masked when CS is sampled HIGH. CS provides for external bank selection on systems with multiple banks. It is considered part of the command code. RAS Input Row Address Strobe: The RAS signal defines the operation commands in conjunction with the CAS and WE signals and is latched at the positive edges of CK. When RAS and CS are asserted "LOW" and CAS is asserted "HIGH," either the BankActivate command or the Precharge command is selected by the WE signal. When the WE is asserted "HIGH," the BankActivate command is selected and the bank designated by BA is turned on to the active state. When the WE is asserted "LOW," the Precharge command is selected and the bank designated by BA is switched to the idle state after the precharge operation. CAS Input Column Address Strobe: The CAS signal defines the operation commands in conjunction with the RAS and WE signals and is latched at the positive edges of CK. When RAS is held "HIGH" and CS is asserted "LOW," the column access is started by asserting CAS "LOW." Then, the Read or Write command is selected by asserting WE "HIGH" or “LOW”. WE Input Write Enable: The WE signal defines the operation commands in conjunction with the RAS and CAS signals and is latched at the positive edges of CK. The WE input is used to select the BankActivate or Precharge command and Read or Write command. LDQS, Input / UDQS Output Bidirectional Data Strobe: Specifies timing for Input and Output data. Read Data Strobe is edge triggered. Write Data Strobe provides a setup and hold time for data and DQM. LDQS is for DQ0~7, UDQS is for DQ8~15. LDM, Input Data Input Mask: Input data is masked when DM is sampled HIGH during a write cycle. LDM masks DQ0-DQ7, UDM masks DQ8-DQ15. Input / Output Data I/O: The DQ0-DQ15 input and output data are synchronized with positive and negative edges of LDQS and UDQS. The I/Os are byte-maskable during Writes. UDM DQ0 - DQ15 Alliance Memory Confidential 4 Rev.1.1 July /2011 AS4C32M16D1 VDD Supply Power Supply: 2.5V ± 0.2V . VSS Supply Ground VDDQ Supply DQ Power: 2.5V ± 0.2V . Provide isolated power to DQs for improved noise immunity. VSSQ Supply DQ Ground: Provide isolated ground to DQs for improved noise immunity. VREF Supply Reference Voltage for Inputs: +0.5*VDDQ NC - No Connect: These pins should be left unconnected. Alliance Memory Confidential 5 Rev.1.1 July /2011 AS4C32M16D1 Operation Mode Table 3 shows the truth table for the operation commands. Table 2. Truth Table (Note (1), (2)) Command BankActivate State CKEn-1 CKEn DM BA0,1 A10 A0-9, 11-12 CS RAS CAS WE Idle(3) H X X V Row address L L H H BankPrecharge Any H X X V L X L L H L PrechargeAll Any H X X X H X L L H L Column address (A0 ~ A9) L H L L L H L L Column address (A0 ~ A9) L H L H L H L H Write Active(3) H X X V L Write and AutoPrecharge Active(3) H X X V H Read Active(3) H X X V L Read and Autoprecharge Active(3) H X X V H Mode Register Set Idle H X X OP code L L L L Extended MRS Idle H X X OP code L L L L No-Operation Any H X X X X X L H H H Active(4) H X X X X X L H H L Device Deselect Any H X X X X X H X X X AutoRefresh Idle H H X X X X L L L H SelfRefresh Entry Idle H L X X X X L L L H SelfRefresh Exit Idle L H X X X X H X X X L H H H H X X X L H H H H X X X L H H H H X X X L V V V H X X X L H H H X X X X X Data Input Mask Enable(5) Active H X H X X X Note: 1. V=Valid data, X=Don't Care, L=Low level, H=High level 2. CKEn signal is input level when commands are provided. CKEn-1 signal is input level one clock cycle before the commands are provided. 3. These are states of bank designated by BA signal. 4. Device state is 2, 4, and 8 burst operation. 5. LDM and UDM can be enabled respectively. X X X X Burst Stop (SelfRefresh) Precharge Power Down Mode Entry Precharge Power Down Mode Exit Idle Any H L L H X X X X X X X X (PowerDown) Active Power Down Mode Entry Active Power Down Mode Exit Active Any H L L H X X X X X X X X (PowerDown) Data Input Mask Disable Alliance Memory Confidential Active H X 6 L X X Rev.1.1 July /2011 AS4C32M16D1 Mode Register Set (MRS) The Mode Register stores the data for controlling various operating modes of a DDR SDRAM. It programs CAS Latency, Burst Type, and Burst Length to make the DDR SDRAM useful for a variety of applications. The default value of the Mode Register is not defined; therefore the Mode Register must be written by the user. Values stored in the register will be retained until the register is reprogrammed. The Mode Register is written by asserting Low on CS , RAS , CAS , WE , BA1 and BA0 (the device should have all banks idle with no bursts in progress prior to writing into the mode register, and CKE should be High). The state of address pins A0~A12 and BA0, BA1 in the same cycle in which CS , RAS , CAS and WE are asserted Low is written into the Mode Register. A minimum of two clock cycles, tMRD, are required to complete the write operation in the Mode Register. The Mode Register is divided into various fields depending on functionality. The Burst Length uses A0~A2, Burst Type uses A3, and CAS Latency (read latency from column address) uses A4~A6. A logic 0 should be programmed to all the undefined addresses to ensure future compatibility. Reserved states should not be used to avoid unknown device operation or incompatibility with future versions. Refer to the table for specific codes for various burst lengths, burst types and CAS latencies. Table 3. Mode Register Bitmap BA1 BA0 A12 0 A8 0 1 X 0 A11 A10 A9 RFU must be set to “0” A7 Test Mode 0 Normal mode 0 DLL Reset 1 Test mode BA0 Mode 0 MRS 1 EMRS A6 0 0 0 0 1 1 1 1 A5 0 0 1 1 0 0 1 1 A8 A7 A6 T.M. A5 A4 CAS Latency A4 CAS Latency 0 Reserved 1 Reserved 0 2 3 1 Reserved 0 Reserved 1 2.5 0 Reserved 1 A3 Burst Type 0 Sequential 1 Interleave A3 BT A2 0 0 0 0 1 1 1 1 A2 A1 A0 Burst Length A1 0 0 1 1 0 0 1 1 Address Field Mode Register A0 Burst Length 0 Reserved 1 2 0 4 1 8 0 Reserved 1 Reserved 0 Reserved 1 Reserved  Burst Length Field (A2~A0) This field specifies the data length of column access using the A2~A0 pins and selects the Burst Length to be 2, 4, 8. Table 4. Burst Length A2 A1 A0 Burst Length 0 0 0 Reserved 0 0 1 2 0 1 0 4 0 1 1 8 1 0 0 Reserved 1 0 1 Reserved 1 1 0 Reserved 1 1 1 Reserved Alliance Memory Confidential 7 Rev.1.1 July /2011 AS4C32M16D1  Addressing Mode Select Field (A3) The Addressing Mode can be one of two modes, either Interleave Mode or Sequential Mode. Both Sequential Mode and Interleave Mode support burst length of 2, 4 and 8. Table 5. Addressing Mode  A3 Addressing Mode 0 Sequential 1 Interleave Burst Definition, Addressing Sequence of Sequential and Interleave Mode Table 6. Burst Address ordering Burst Length 2 4 8 A2 X X X X X X 0 0 0 0 1 1 1 1 Start Address A1 X X 0 0 1 1 0 0 1 1 0 0 1 1 A0 0 1 0 1 0 1 0 1 0 1 0 1 0 1 Sequential Interleave 0, 1 1, 0 0, 1, 2, 3 1, 2, 3, 0 2, 3, 0, 1 3, 0, 1, 2 0, 1, 2, 3, 4, 5, 6, 7 1, 2, 3, 4, 5, 6, 7, 0 2, 3, 4, 5, 6, 7, 0, 1 3, 4, 5, 6, 7, 0, 1, 2 4, 5, 6, 7, 0, 1, 2, 3 5, 6, 7, 0, 1, 2, 3, 4 6, 7, 0, 1, 2, 3, 4, 5 7, 0, 1, 2, 3, 4, 5, 6 0, 1 1, 0 0, 1, 2, 3 1, 0, 3, 2 2, 3, 0, 1 3, 2, 1, 0 0, 1, 2, 3, 4, 5, 6, 7 1, 0, 3, 2, 5, 4, 7, 6 2, 3, 0, 1, 6, 7, 4, 5 3, 2, 1, 0, 7, 6, 5, 4 4, 5, 6, 7, 0, 1, 2, 3 5, 4, 7, 6, 1, 0, 3, 2 6, 7, 4, 5, 2, 3, 0, 1 7, 6, 5, 4, 3, 2, 1, 0  CAS Latency Field (A6~A4) This field specifies the number of clock cycles from the assertion of the Read command to the first read data. The minimum whole value of CAS Latency depends on the frequency of CK. The minimum whole value satisfying the following formula must be programmed into this field. tCAC(min)  CAS Latency X tCK Table 7. CAS Latency A6 A5 A4 CAS Latency 0 0 0 Reserved 0 0 1 Reserved 0 1 0 2 clocks 0 1 1 3 clocks 1 0 0 Reserved 1 0 1 Reserved 1 1 0 2.5 clocks 1 1 1 Reserved Alliance Memory Confidential 8 Rev.1.1 July /2011 AS4C32M16D1  Test Mode field (A8~A7) These two bits are used to enter the test mode and must be programmed to "00" in normal operation. Table 8. Test Mode A8 A7 Test Mode 0 0 Normal mode 1 0 DLL Reset  ( BA0, BA1) Table 9. MRS/EMRS BA1 BA0 A12 ~ A0 RFU 0 MRS Cycle RFU 1 Extended Functions (EMRS) Alliance Memory Confidential 9 Rev.1.1 July /2011 AS4C32M16D1 Extended Mode Register Set (EMRS) The Extended Mode Register Set stores the data for enabling or disabling DLL and selecting output driver strength. The default value of the extended mode register is not defined, therefore must be written after power up for proper operation. The Extened Mode Register is written by asserting Low on CS , RAS , CAS , WE , BA1 and BA0 (the device should have all banks idle with no bursts in progress prior to writing into the mode register, and CKE should be High). The state of A0 ~ A12, BA0 and BA1 is written in the mode register in the same cycle as CS , RAS , CAS , and WE going low. The DDR SDRAM should be in all bank precharge with CKE already high prior to writing into the extended mode register. A1 is used for setting driver strength to normal, or weak. Two clock cycles are required to complete the write operation in the extended mode register. The mode register contents can be changed using the same command and clock cycle requirements during operation as long as all banks are in the idle state. A0 is used for DLL enable or disable. "High" on BA0 is used for EMRS. Refer to the table for specific codes. Table 10. Extended Mode Register Bitmap BA1 BA0 A12 A11 A10 0 BA0 0 1 1 Mode MRS EMRS A9 A8 RFU must be set to “0” A7 A6 A5 A4 A3 A2 A1 Address Field DS1 RFU must be set to “0” DS0 DLL Extended Mode Register A6 A1 Drive Strength Comment 0 0 Full 0 1 Weak 1 0 RFU Reserved For Future 1 1 Matched impedance Output driver matches impedance Alliance Memory Confidential A0 10 A0 0 1 DLL Enable Disable Rev.1.1 July /2011 AS4C32M16D1 Table 11. Absolute Maximum Rating Symbol Item Rating Unit VIN, VOUT Input, Output Voltage - 0.5~ VDDQ + 0.5 V VDD, VDDQ Power Supply Voltage - 1~3.6 V Commercial 0~70 °C Industrial -40~85 °C - 55~150 °C 260 °C 1 W TA TSTG TSOLDER PD Ambient Temperature Storage Temperature Soldering Temperature Power Dissipation IOS Short Circuit Output Current 50 mA Note1: Stress greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. Note2: These voltages are relative to Vss Table 12. Recommended D.C. Operating Conditions (TA = 0 ~ 70 C) Symbol Parameter Min. Max. Unit VDD Power Supply Voltage 2.3 2.7 V VDDQ Power Supply Voltage (for I/O Buffer) 2.3 2.7 V VREF Input Reference Voltage 0.49*VDDQ 0.51* VDDQ V VIH (DC) Input High Voltage (DC) VREF + 0.15 VDDQ + 0.3 V VIL (DC) Input Low Voltage (DC) VTT VIN (DC) VID (DC) -0.3 Termination Voltage VREF – 0.15 V VREF - 0.04 VREF + 0.04 V Note Input Voltage Level, CK and CK inputs -0.3 VDDQ + 0.3 V Input Different Voltage, CK and CK inputs 0.36 VDDQ + 0.6 V Input leakage current -2 2 A IOZ Output leakage current -5 5 A IOH Output High Current -16.2 - mA VOH = 1.95V 16.2 - mA VOL = 0.35V Min. Max. Unit II IOL Output Low Current Note : All voltages are referenced to VSS. Table 13. Capacitance (VDD = 2.5V, f = 1MHz, TA = 25 C) Symbol Parameter CIN1 Input Capacitance (CK, CK ) 2 3 pF CIN2 Input Capacitance (All other input-only pins) 2 3 pF CI/O DQ, DQS, DM Input/Output Capacitance 4 5 pF Note: These parameters are guaranteed by design, periodically sampled and are not 100% tested Alliance Memory Confidential 11 Rev.1.1 July /2011 AS4C32M16D1 Table 14. D.C. Characteristics (VDD = 2.5V  0.2V, TA = -40~85 C) Parameter & Test Condition OPERATING CURRENT: One bank; Active-Precharge; tRC=tRC(min); tCK=tCK(min); DQ,DM and DQS inputs changing once per clock cycle; Address and control inputs changing once every two clock cycles. OPERATING CURRENT : One bank; Active-ReadPrecharge; BL=4; tRC=tRC(min); tCK=tCK(min); lout=0mA; Address and control inputs changing once per clock cycle PRECHARGE POWER-DOWN STANDBY CURRENT: All banks idle; power-down mode; tCK=tCK(min); CKE=LOW IDLE STANDBY CURRENT : CKE = HIGH; CS =HIGH(DESELECT); All banks idle; tCK=tCK(min); Address and control inputs changing once per clock cycle; VIN=VREF for DQ, DQS and DM ACTIVE POWER-DOWN STANDBY CURRENT : one bank active; power-down mode; CKE=LOW; tCK=tCK(min) ACTIVE STANDBY CURRENT : CS =HIGH;CKE=HIGH; one bank active ; tRC=tRC(max);tCK=tCK(min);Address and control inputs changing once per clock cycle; DQ,DQS,and DM inputs changing twice per clock cycle OPERATING CURRENT BURST READ : BL=2; READS; Continuous burst; one bank active; Address and control inputs changing once per clock cycle; tCK=tCK(min); lout=0mA;50% of data changing on every transfer OPERATING CURRENT BURST Write : BL=2; WRITES; Continuous Burst ;one bank active; address and control inputs changing once per clock cycle; tCK=tCK(min); DQ,DQS,and DM changing twice per clock cycle; 50% of data changing on every transfer AUTO REFRESH CURRENT : tRC=tRFC(min); tCK=tCK(min) SELF REFRESH CURRENT: Self Refresh Mode ; CKE≦ 0.2V;tCK=tCK(min) BURST OPERATING CURRENT 4 bank operation: Four bank interleaving READs; BL=4;with Auto Precharge; tRC=tRC(min); tCK=tCK(min); Address and control inputs change only during Active, READ , or WRITE command Alliance Memory Confidential 12 Symbol -5 Max. Unit Note IDD0 220 mA IDD1 250 mA IDD2P 40 mA IDD2N 70 mA IDD3P 55 mA IDD3N 100 mA IDD4R 420 mA IDD4W 420 mA IDD5 290 mA IDD6 6 mA IDD7 480 mA Rev.1.1 1 July /2011 AS4C32M16D1 Table 15. Electrical Characteristics and Recommended A.C.Operating Condition (VDD = 2.5V ± 0.2V, TA = -40~85 C) Symbol -5 Parameter CL = 2 CL = 2.5 CL = 3 Min. 7.5 6 5 0.45 0.45 tCLMIN or tCHMIN Max. 12 12 7.5 0.55 0.55 - Unit Note ns ns ns tCK tCK ns 2 tCK Clock cycle time tCH tCL tHP Clock high level width Clock low level width Clock half period tHZ Data-out-high impedance time from CK, CK - 0.7 ns 3 tLZ Data-out-low impedance time from CK, CK -0.7 0.7 ns 3 tDQSCK DQS-out access time from CK, CK -0.6 0.6 ns tAC Output access time from CK, CK -0.7 0.7 ns 0.9 0.4 0.72 0 0.25 0.4 0.35 0.35 0.7 0.7 0.4 0.4 tHP - tQHS 55 70 40 15 15 10 15 2 10 200 75 tWR+tRP 1.75 2.2 0.2 0.2 0.4 1.1 0.6 1.25 0.6 120K 7.8 0.5 - ns tCK tCK tCK ns tCK tCK tCK tCK ns ns ns ns ns ns ns ns ns ns ns ns tCK ns s tCK ns ns ns ns ns tCK tCK tDQSQ DQS-DQ Skew tRPRE Read preamble tRPST Read postamble tDQSS CK to valid DQS-in tWPRES DQS-in setup time tWPRE DQS Write preamble tWPST DQS write postamble tDQSH DQS in high level pulse width tDQSL DQS in low level pulse width tIS Address and Control input setup time tIH Address and Control input hold time tDS DQ & DM setup time to DQS tDH DQ & DM hold time to DQS tQH DQ/DQS output hold time from DQS tRC Row cycle time tRFC Refresh row cycle time tRAS Row active time tRCD Active to Read or Write delay tRP Row precharge time tRRD Row active to Row active delay tWR Write recovery time tWTR Internal Write to Read Command Delay tMRD Mode register set cycle time tREFI Average Periodic Refresh interval tXSRD Self refresh exit to read command delay tXSNR Self refresh exit to non-read command delay tDAL Auto Precharge write recovery + precharge time tDIPW DQ and DM input pulse width tIPW Control and Address input pulse width tQHS Data Hold Skew Factor tDSS DQS falling edge to CK setup time tDSH DQS falling edge hold time from CK Alliance Memory Confidential 13 Rev.1.1 4 5 6 6 7 July /2011 AS4C32M16D1 Table 16. Recommended A.C. Operating Conditions (VDD = 2.5V ± 0.2V, TA = 0~70 C) Parameter Symbol Min. Max. Unit VIH (AC) VREF + 0.31 - V Input Low Voltage (AC) VIL (AC) - VREF – 0.31 V Input Different Voltage, CK and CK inputs VID (AC) 0.7 VDDQ + 0.6 V Input Crossing Point Voltage, CK and CK inputs VIX (AC) 0.5*VDDQ-0.2 0.5*VDDQ+0.2 V Input High Voltage (AC) Note: 1) Enables on-chip refresh and address counters. 2) Min(tCL, tCH) refers to ther smaller of the actual clock low time and actual clock high time as provided to the device. 3) tHZ and tLZ transitions occur in the same access time windows as valid data transitions. These parameters are not referenced to a specific voltage level, but specify when the device output is no longer driving(HZ), or begins driving(LZ). 4) The specific requirement is that DQS be valid (High, Low, or at some point on a valid transition) on or before this CLK edge. A valid transition is defined as monotonic, and meeting the input slew rate specifications of the device. When no writes were previously in progress on the bus, DQS will be transitioning from High-Z to logic LOW. If a previous write was in progress, DQS could be HIGH, LOW, or transitioning from HIGH to LOW at this time, depending on tDQSS. 5) The maximum limit for this parameter is not a device limit. The device will operate with a greater value for this parameter, but system performance (bus turnaround) will degrade accordingly. 6) For command/address and CK & CK slew rate ≧ 1.0V/ns. 7) A maximum of eight AUTO REFRESH commands can be posted to any given DDR SDRAM device. 8) Power-up sequence is described in Note 10 9) A.C. Test Conditions Alliance Memory Confidential 14 Rev.1.1 July /2011 AS4C32M16D1 Table 17. SSTL _2 Interface Reference Level of Output Signals (VREF) 0.5 * VDDQ Output Load Reference to the Test Load Input Signal Levels VREF+0.31 V / VREF-0.31 V Input Signals Slew Rate 1 V/ns Reference Level of Input Signals 0.5 * VDDQ Figure 3. SSTL_2 A.C. Test Load 0.5 * VDDQ 50Ω DQ, DQS Z0=50Ω 30pF 10) Power up Sequence Power up must be performed in the following sequence. 1) Apply power to VDD before or at the same time as VDDQ, VTT and VREF when all input signals are held "NOP" state and maintain CKE “LOW”. 2) Start clock and maintain stable condition for minimum 200s. 3) Issue a “NOP” command and keep CKE “HIGH” 4) Issue a “Precharge All” command. 5) Issue EMRS – enable DLL. 6) Issue MRS – reset DLL. (An additional 200 clock cycles are required to lock the DLL). 7) Precharge all banks of the device. 8) Issue two or more Auto Refresh commands. 9) Issue MRS – with A8 to low to initialize the mode register. Alliance Memory Confidential 15 Rev.1.1 July /2011 AS4C32M16D1 Timing Waveforms Figure 4. Activating a Specific Row in a Specific Bank CK CK CKE HIGH CS RAS CAS WE Address RA BA0,1 BA RA=Row Address BA=Bank Address Don’t Care Alliance Memory Confidential 16 Rev.1.1 July /2011 AS4C32M16D1 Figure 5. tRCD and tRRD Definition CK CK COMMAND ACT Address Row Row Col BA0,BA1 Bank A Bank B Bank B NOP NOP ACT tRRD NOP NOP RD/WR NOP tRCD Don’t Care Figure 6. READ Command CK CK CKE HIGH CS RAS CAS WE A0 - A9 CA EN AP A10 DIS AP BA0,1 BA CA=Column Address BA=Bank Address EN AP=Enable Autoprecharge DIS AP=Disable Autoprecharge Don’t Care Alliance Memory Confidential 17 Rev.1.1 July /2011 AS4C32M16D1 Figure 7. Read Burst Required CAS Latencies (CL=2) CK CK COMMAND READ ADDRESS Bank A, Col n NOP NOP NOP NOP NOP CL=2 DQS DO n DQ DO n=Data Out from column n Burst Length=4 3 subsequent elements of Data Out appear in the programmed order following DO n Don’t Care Read Burst Required CAS Latencies (CL=2.5) CK CK COMMAND READ ADDRESS Bank A, Col n NOP NOP NOP NOP NOP CL=2.5 DQS DO n DQ DO n=Data Out from column n Burst Length=4 3 subsequent elements of Data Out appear in the programmed order following DO n Don’t Care Alliance Memory Confidential 18 Rev.1.1 July /2011 AS4C32M16D1 Read Burst Required CAS Latencies (CL=3) CK CK COMMAND READ ADDRESS Bank A, Col n NOP NOP NOP NOP NOP CL=3 DQS DO n DQ DO n=Data Out from column n Burst Length=4 3 subsequent elements of Data Out appear in the programmed order following DO n Don’t Care Alliance Memory Confidential 19 Rev.1.1 July /2011 AS4C32M16D1 Figure 8. Consecutive Read Bursts Required CAS Latencies (CL=2) CK CK COMMAND ADDRESS READ NOP READ NOP NOP NOP Bank, Col o Bank, Col n CL=2 DQS DO n DQ DO o DO n (or o)=Data Out from column n (or column o) Burst Length=4 or 8 (if 4, the bursts are concatenated; if 8, the second burst interrupts the first) 3 subsequent elements of Data Out appear in the programmed order following DO n 3 (or 7) subsequent elements of Data Out appear in the programmed order following DO o Read commands shown must be to the same device Don’t Care Alliance Memory Confidential 20 Rev.1.1 July /2011 AS4C32M16D1 Consecutive Read Bursts Required CAS Latencies (CL=2.5) CK CK COMMAND ADDRESS READ NOP READ NOP NOP NOP Bank, Col o Bank, Col n CL=2.5 DQS DO n DQ DO o DO n (or o)=Data Out from column n (or column o) Burst Length=4 or 8 (if 4, the bursts are concatenated; if 8, the second burst interrupts the first) 3 subsequent elements of Data Out appear in the programmed order following DO n 3 (or 7) subsequent elements of Data Out appear in the programmed order following DO o Read commands shown must be to the same device Don’t Care Alliance Memory Confidential 21 Rev.1.1 July /2011 AS4C32M16D1 Consecutive Read Bursts Required CAS Latencies (CL=3) CK CK COMMAND ADDRESS READ NOP Bank, Col n READ NOP NOP NOP Bank, Col o CL=3 DQS DO n DQ DO o DO n (or o)=Data Out from column n (or column o) Burst Length=4 or 8 (if 4, the bursts are concatenated; if 8, the second burst interrupts the first) 3 subsequent elements of Data Out appear in the programmed order following DO n 3 (or 7) subsequent elements of Data Out appear in the programmed order following DO o Read commands shown must be to the same device Don’t Care Alliance Memory Confidential 22 Rev.1.1 July /2011 AS4C32M16D1 Figure 9. Non-Consecutive Read Bursts Required CAS Latencies (CL=2) CK CK COMMAND ADDRESS READ NOP NOP READ NOP NOP Bank, Col o Bank, Col n CL=2 DQS DO n DQ DO o DO n (or o)=Data Out from column n (or column o) Burst Length=4 3 subsequent elements of Data Out appear in the programmed order following DO n (and following DO o) Don’t Care Non-Consecutive Read Bursts Required CAS Latencies (CL=2.5) CK CK COMMAND ADDRESS READ NOP NOP READ NOP NOP NOP Bank, Col o Bank, Col n CL=2.5 DQS DO n DQ DO o DO n (or o)=Data Out from column n (or column o) Burst Length=4 3 subsequent elements of Data Out appear in the programmed order following DO n (and following DO o) Don’t Care Alliance Memory Confidential 23 Rev.1.1 July /2011 AS4C32M16D1 Non-Consecutive Read Bursts Required CAS Latencies (CL=3) CK CK COMMAND ADDRESS READ NOP NOP READ NOP NOP NOP Bank, Col o Bank, Col n CL=3 DQS DO n DQ DO o DO n (or o)=Data Out from column n (or column o) Burst Length=4 3 subsequent elements of Data Out appear in the programmed order following DO n (and following DO o) Don’t Care Alliance Memory Confidential 24 Rev.1.1 July /2011 AS4C32M16D1 Figure 10. Random Read Accesses Required CAS Latencies (CL=2) CK CK COMMAND ADDRESS READ READ READ READ Bank, Col n Bank, Col o Bank, Col p Bank, Col q NOP NOP CL=2 DQS DO n' DO n DQ DO o' DO o DO p DO p' DO q DO n, etc. =Data Out from column n, etc. n', etc. =the next Data Out following DO n, etc. according to the programmed burst order Burst Length=2,4 or 8 in cases shown. If burst of 4 or 8, the burst is interrupted Reads are to active rows in any banks Don’t Care Random Read Accesses Required CAS Latencies (CL=2.5) CK CK COMMAND ADDRESS READ READ READ READ Bank, Col n Bank, Col o Bank, Col p Bank, Col q NOP NOP CL=2.5 DQS DO n DQ DO n' DO o DO o' DO p DO p' DO n, etc. =Data Out from column n, etc. n', etc. =the next Data Out following DO n, etc. according to the programmed burst order Burst Length=2,4 or 8 in cases shown. If burst of 4 or 8, the burst is interrupted Reads are to active rows in any banks Don’t Care Alliance Memory Confidential 25 Rev.1.1 July /2011 AS4C32M16D1 Random Read Accesses Required CAS Latencies (CL=3) CK CK COMMAND ADDRESS READ READ READ READ Bank, Col n Bank, Col o Bank, Col p Bank, Col q NOP NOP CL=3 DQS DO n DQ DO n' DO o DO o' DO p DO n, etc. =Data Out from column n, etc. n', etc. =the next Data Out following DO n, etc. according to the programmed burst order Burst Length=2,4 or 8 in cases shown. If burst of 4 or 8, the burst is interrupted Reads are to active rows in any banks Don’t Care Alliance Memory Confidential 26 Rev.1.1 July /2011 AS4C32M16D1 Figure 11. Terminating a Read Burst Required CAS Latencies (CL=2) CK CK COMMAND READ ADDRESS Bank A, Col n NOP BST NOP NOP NOP CL=2 DQS DO n DQ DO n = Data Out from column n Cases shown are bursts of 8 terminated after 4 data elements 3 subsequent elements of Data Out appear in the programmed order following DO n Don’t Care Terminating a Read Burst Required CAS Latencies (CL=2.5) CK CK COMMAND READ ADDRESS Bank A, Col n NOP BST NOP NOP NOP CL=2.5 DQS DO n DQ DO n = Data Out from column n Cases shown are bursts of 8 terminated after 4 data elements 3 subsequent elements of Data Out appear in the programmed order following DO n Don’t Care Alliance Memory Confidential 27 Rev.1.1 July /2011 AS4C32M16D1 Terminating a Read Burst Required CAS Latencies (CL=3) CK CK COMMAND READ ADDRESS Bank A, Col n NOP BST NOP NOP NOP CL=3 DQS DO n DQ DO n = Data Out from column n Cases shown are bursts of 8 terminated after 4 data elements 3 subsequent elements of Data Out appear in the programmed order following DO n Don’t Care Alliance Memory Confidential 28 Rev.1.1 July /2011 AS4C32M16D1 Figure 12. Read to Write Required CAS Latencies (CL=2) CK CK COMMAND ADDRESS READ BST NOP NOP WRITE NOP Bank, Col o Bank, Col n tDQSS min CL=2 DQS DO n DQ DI o DM DO n (or o)= Data Out from column n (or column o) Burst Length= 4 in the cases shown (applies for bursts of 8 as well; if burst length is 2, the BST command shown can be NOP) 1 subsequent element of Data Out appears in the programmed order following DO n Data in elements are applied following DI o in the programmed order Don’t Care Alliance Memory Confidential 29 Rev.1.1 July /2011 AS4C32M16D1 Read to Write Required CAS Latencies (CL=2.5) CK CK COMMAND ADDRESS READ BST NOP NOP NOP WRITE Bank, Col o Bank, Col n CL=2.5 tDQSS min DQS DO n DQ DI o DM DO n (or o)= Data Out from column n (or column o) Burst Length= 4 in the cases shown (applies for bursts of 8 as well; if burst length is 2, the BST command shown can be NOP) 1 subsequent element of Data Out appears in the programmed order following DO n Data in elements are applied following DI o in the programmed order Don’t Care Alliance Memory Confidential 30 Rev.1.1 July /2011 AS4C32M16D1 Read to Write Required CAS Latencies (CL=3) CK CK COMMAND ADDRESS READ BST NOP NOP NOP WRITE Bank, Col o Bank, Col n tDQSS min CL=3 DQS DO n DQ DI o DM DO n (or o)= Data Out from column n (or column o) Burst Length= 4 in the cases shown (applies for bursts of 8 as well; if burst length is 2, the BST command shown can be NOP) 1 subsequent element of Data Out appears in the programmed order following DO n Data in elements are applied following DI o in the programmed order Don’t Care Alliance Memory Confidential 31 Rev.1.1 July /2011 AS4C32M16D1 Figure 13. Read to Precharge Required CAS Latencies (CL=2) CK CK COMMAND READ NOP PRE NOP NOP ACT tRP ADDRESS Bank A, Col n Bank (a or all) Bank A, Row CL=2 DQS DO n DQ DO n = Data Out from column n Cases shown are either uninterrupted bursts of 4, or interrupted bursts of 8 3 subsequent elements of Data Out appear in the programmed order following DO n Precharge may be applied at (BL/2) tCK after the READ command Note that Precharge may not be issued before tRAS ns after the ACTIVE command for applicable banks The Active command may be applied if tRC has been met Don’t Care Alliance Memory Confidential 32 Rev.1.1 July /2011 AS4C32M16D1 Read to Precharge Required CAS Latencies (CL=2.5) CK CK COMMAND READ NOP PRE NOP NOP ACT tRP ADDRESS Bank A, Col n Bank (a or all) Bank A, Row CL=2.5 DQS DO n DQ DO n = Data Out from column n Cases shown are either uninterrupted bursts of 4, or interrupted bursts of 8 3 subsequent elements of Data Out appear in the programmed order following DO n Precharge may be applied at (BL/2) tCK after the READ command Note that Precharge may not be issued before tRAS ns after the ACTIVE command for applicable banks The Active command may be applied if tRC has been met Don’t Care Alliance Memory Confidential 33 Rev.1.1 July /2011 AS4C32M16D1 Read to Precharge Required CAS Latencies (CL=3) CK CK COMMAND READ NOP PRE NOP NOP ACT tRP ADDRESS Bank A, Col n Bank (a or all) Bank A, Row CL=3 DQS DO n DQ DO n = Data Out from column n Cases shown are either uninterrupted bursts of 4, or interrupted bursts of 8 3 subsequent elements of Data Out appear in the programmed order following DO n Precharge may be applied at (BL/2) tCK after the READ command Note that Precharge may not be issued before tRAS ns after the ACTIVE command for applicable banks The Active command may be applied if tRC has been met Alliance Memory Confidential 34 Don’t Care Rev.1.1 July /2011 AS4C32M16D1 Figure 14. Write Command CK CK CKE HIGH CS RAS CAS WE A0 - A9 CA EN AP A10 DIS AP BA0,1 BA CA=Column Address BA=Bank Address EN AP=Enable Autoprecharge DIS AP=Disable Autoprecharge Don’t Care Alliance Memory Confidential 35 Rev.1.1 July /2011 AS4C32M16D1 Figure 15. Write Max DQSS CK T0 T1 T2 T3 T4 T5 T6 T7 CK COMMAND WRITE ADDRESS Bank A, Col n NOP NOP NOP tDQSS max DQS DI n DQ DM DI n = Data In for column n 3 subsequent elements of Data In are applied in the programmed order following DI n A non-interrupted burst of 4 is shown A10 is LOW with the WRITE command (AUTO PRECHARGE disabled) Don’t Care Alliance Memory Confidential 36 Rev.1.1 July /2011 AS4C32M16D1 Figure 16. Write Min DQSS CK T0 T1 T2 T3 T4 T5 T6 CK COMMAND ADDRESS NOP WRITE NOP NOP Bank A, Col n tDQSS min DQS DI n DQ DM DI n = Data In for column n 3 subsequent elements of Data In are applied in the programmed order following DI n A non-interrupted burst of 4 is shown A10 is LOW with the WRITE command (AUTO PRECHARGE disabled) Don’t Care Alliance Memory Confidential 37 Rev.1.1 July /2011 AS4C32M16D1 Figure 17. Write Burst Nom, Min, and Max tDQSS CK T0 T1 T2 T3 T4 T5 T6 T7 T8 T9 T10 T11 CK COMMAND ADDRESS NOP WRITE NOP NOP NOP NOP Bank , Col n tDQSS (nom) DQS DI n DQ DM tDQSS (min) DQS DQ DI n DM tDQSS (max) DQS DI n DQ DM DI n = Data In for column n 3 subsequent elements of Data are applied in the programmed order following DI n A non-interrupted burst of 4 is shown A10 is LOW with the WRITE command (AUTO PRECHARGE disabled) DM=UDM & LDM Don’t Care Alliance Memory Confidential 38 Rev.1.1 July /2011 AS4C32M16D1 Figure 18. Write to Write Max tDQSS CK T0 T1 T2 T3 T4 T5 T6 T7 T8 T9 T10 T11 CK COMMAND ADDRESS WRITE NOP WRITE NOP NOP NOP Bank , Col o Bank , Col n tDQSS (max) DQS DI n DQ DI o DM DI n , etc. = Data In for column n,etc. 3 subsequent elements of Data In are applied in the programmed order following DI n 3 subsequent elements of Data In are applied in the programmed order following DI o Non-interrupted bursts of 4 are shown DM= UDM & LDM Don’t Care Alliance Memory Confidential 39 Rev.1.1 July /2011 AS4C32M16D1 Figure 19. Write to Write Max tDQSS, Non Consecutive CK T0 T1 T2 T3 T4 T5 T6 T7 T8 T9 T10 T11 CK COMMAND ADDRESS WRITE NOP NOP Bank Col n WRITE NOP NOP Bank Col o tDQSS (max) DQS DI n DQ DI o DM DI n, etc. = Data In for column n, etc. 3 subsequent elements of Data In are applied in the programmed order following DI n 3 subsequent elements of Data In are applied in the programmed order following DI o Non-interrupted bursts of 4 are shown DM= UDM & LDM Don’t Care Alliance Memory Confidential 40 Rev.1.1 July /2011 AS4C32M16D1 Figure 20. Random Write Cycles Max tDQSS CK T0 T1 T2 T4 T3 T5 T6 T8 T7 T9 CK COMMAND ADDRESS WRITE WRITE WRITE WRITE WRITE Bank Col n Bank Col o Bank Col p Bank Col q Bank Col r tDQSS (max) DQS DI n DQ DI n' DI o DI o' DI p DI p' DI q DI q' DM DI n, etc. = Data In for column n, etc. n', etc. = the next Data In following DI n, etc. according to the programmed burst order Programmed Burst Length 2, 4, or 8 in cases shown If burst of 4 or 8, the burst would be truncated Each WRITE command may be to any bank and may be to the same or different devices DM= UDM & LDM Don’t Care Alliance Memory Confidential 41 Rev.1.1 July /2011 AS4C32M16D1 Figure 21. Write to Read Max tDQSS Non Interrupting CK T0 T1 T2 T3 T4 T5 T6 T7 T8 T9 T10 T11 T12 CK COMMAND WRITE NOP NOP NOP READ NOP NOP tWTR ADDRESS Bank Col o Bank Col n CL=3 tDQSS (max) DQS DI n DQ DM DI n, etc. = Data In for column n, etc. 1 subsequent elements of Data In are applied in the programmed order following DI n A non-interrupted burst of 2 is shown tWTR is referenced from the first positive CK edge after the last Data In Pair A10 is LOW with the WRITE command (AUTO PRECHARGE is disabled) The READ and WRITE commands are to the same devices but not necessarily to the same bank DM= UDM & LDM Alliance Memory Confidential Don’t Care 42 Rev.1.1 July /2011 AS4C32M16D1 Figure 22. Write to Read Max tDQSS interrupting CK T0 T1 T2 T3 T4 T5 T6 T7 T8 T9 T10 T11 T12 CK COMMAND WRITE NOP NOP NOP READ NOP tWTR ADDRESS Bank Col o Bank Col n CL=3 tDQSS (max) DQS DI n DQ DM DI n, etc. = Data In for column n, etc. 1 subsequent elements of Data In are applied in the programmed order following DI n An interrupted burst of 8 is shown, 2 data elements are written tWTR is referenced from the first positive CK edge after the last Data In Pair A10 is LOW with the WRITE command (AUTO PRECHARGE is disabled) The READ and WRITE commands are to the same devices but not necessarily to the same bank DM= UDM & LDM Don’t Care Alliance Memory Confidential 43 Rev.1.1 July /2011 AS4C32M16D1 Figure 23. Write to Read Max tDQSS, ODD Number of Data, Interrupting T0 T1 T2 T3 T4 T5 T6 T7 T8 T9 T10 T11 T12 CK CK COMMAND WRITE NOP NOP NOP READ NOP tWTR ADDRESS Bank Col o Bank Col n CL=3 tDQSS (max) DQS DI n DQ DM DI n = Data In for column n An interrupted burst of 8 is shown, 1 data elements are written tWTR is referenced from the first positive CK edge after the last Data In Pair (not the last desired Data In element) A10 is LOW with the WRITE command (AUTO PRECHARGE is disabled) The READ and WRITE commands are to the same devices but not necessarily to the same bank DM= LDM & UDM Don’t Care Alliance Memory Confidential 44 Rev.1.1 July /2011 AS4C32M16D1 Figure 24. Write to Precharge Max tDQSS, NON- Interrupting CK T0 T1 T2 T3 T4 T5 T6 T7 T8 T9 T10 T11 CK COMMAND WRITE NOP NOP NOP NOP PRE tWR ADDRESS Bank a, Col n Bank (a or al) tRP tDQSS (max) DQS DI n DQ DM DI n = Data In for column n 1 subsequent elements of Data In are applied in the programmed order following DI n A non-interrupted burst of 2 is shown tWR is referenced from the first positive CK edge after the last Data In Pair A10 is LOW with the WRITE command (AUTO PRECHARGE is disabled) DM= UDM & LDM Don’t Care Alliance Memory Confidential 45 Rev.1.1 July /2011 AS4C32M16D1 Figure 25. Write to Precharge Max tDQSS, interrupting CK T0 T1 T2 T3 T4 T5 T6 T8 T7 T9 T10 T11 CK COMMAND WRITE NOP NOP NOP PRE NOP tWR ADDRESS Bank a, Col n Bank (a or all) tDQSS (max) tRP *2 DQS DI n DQ DM *1 *1 *1 *1 DI n = Data In for column n An interrupted burst of 4 or 8 is shown, 2 data elements are written tWR is referenced from the first positive CK edge after the last Data In Pair A10 is LOW with the WRITE command (AUTO PRECHARGE is disabled) *1 = can be don't care for programmed burst length of 4 *2 = for programmed burst length of 4, DQS becomes don't care at this point DM= UDM & LDM Don’t Care Alliance Memory Confidential 46 Rev.1.1 July /2011 AS4C32M16D1 Figure 26. Write to Precharge Max tDQSS ODD Number of Data Interrupting CK T0 T1 T2 T3 T4 T5 T6 T8 T7 T9 T10 T11 CK COMMAND WRITE NOP NOP NOP NOP PRE tWR ADDRESS Bank a, Col n Bank (a or all) tDQSS (max) tRP *2 DQS DI n DQ DM *1 *1 *1 *1 DI n = Data In for column n An interrupted burst of 4 or 8 is shown, 1 data element is written tWR is referenced from the first positive CK edge after the last Data In Pair A10 is LOW with the WRITE command (AUTO PRECHARGE is disabled) *1 = can be don't care for programmed burst length of 4 *2 = for programmed burst length of 4, DQS becomes don't care at this point DM= UDM & LDM Don’t Care Alliance Memory Confidential 47 Rev.1.1 July /2011 AS4C32M16D1 Figure 27. Precharge Command CK CK CKE HIGH CS RAS CAS WE A0-A9, A11,A12 ALL BANKS A10 ONE BANK BA0,1 BA BA= Bank Address (if A10 is LOW, otherwise don't care) Don’t Care Alliance Memory Confidential 48 Rev.1.1 July /2011 AS4C32M16D1 Figure 28. Power-Down T0 T1 T2 T3 T4 Tn Tn+1 Tn+2 Tn+3 Tn+4 Tn+5 Tn+6 CK CK tIS tIS CKE COMMAND NOP NOP VALID Exit power-down mode Enter power-down mode No column access in progress VALID Don’t Care Figure 29. Clock Frequency Change in Precharge T0 T1 T2 T4 Tx Tx+1 Ty Ty+1 Ty+2 Ty+3 Ty+4 Tz CK CK CMD CKE NOP NOP NOP Frequency Change Occurs here tRP Alliance Memory Confidential 49 NOP NOP Valid tIS Stable new clock Before power down exit Minmum 2 clocks Required before Changing frequency DLL RESET 200 Clocks Rev.1.1 July /2011 AS4C32M16D1 Figure 30. Data input (Write) Timing tDQSH tDQSL DQS tDS DQ tDH tDS DI n DM tDH DI n = Data In for column n Burst Length = 4 in the case shown 3 subsequent elements of Data In are applied in the programmed order following DI n Don’t Care Figure 31. Data Output (Read) Timing tCH tCL CK CK DQS DQ tDQSQ max tDQSQ max tQH tQH Burst Length = 4 in the case shown Alliance Memory Confidential 50 Rev.1.1 July /2011 AS4C32M16D1 Figure 32. Initialize and Mode Register Sets VDD VDDQ tVDT>=0 VTT (system*) tCK tCH tCL VREF CK CK tIS tIH CKE LVCMOS LOW LEVEL tIS tIH NOP COMMAND PRE MRS EMRS PRE AR AR MRS ACT CODE RA CODE RA BA0=L BA1=L BA DM tIS tIH A0-A9, A11,A12 CODE ALL BANKS A10 tIS tIH CODE tIS tIH ALL BANKS CODE CODE tIS tIH tIS tIH BA0=H BA1=L BA0,BA1 BA0=L BA1=L High-Z DQS High-Z DQ T=200µs **tMRD **tMRD Extended mode Register set Power-up: VDD and CLK stable tRP tRFC tRFC **tMRD 200 cycles of CK** Load Mode Register, Reset DLL (with A8=H) Load Mode Register, (with A8=L) *=VTT is not applied directly to the device, however tVTD must be greater than or equal to zero to avoid device latch-up. ** = tMRD is required before any command can be applied, and 200 cycles of CK are required before any executable command can be applied the two auto Refresh commands may be moved to follow the first MRS but precede the second PRECHARGE ALL command. Don’t Care Alliance Memory Confidential 51 Rev.1.1 July /2011 AS4C32M16D1 Figure 33. Power Down Mode tCK tCH tCL CK CK tIS tIH tIS tIS CKE tIS tIH COMMAND NOP NOP VALID* VALID tIS tIH ADDR VALID VALID DQS DQ DM Enter power-down mode Exit power-down mode No column accesses are allowed to be in progress at the time Power-Down is entered *=If this command is a PRECHARGE ALL (or if the device is already in the idle state) then the Power-Down mode shown is Precharge Power Down. If this command is an ACTIVE (or if at least one row is already active) then the Power-Down mode shown is active Power Down. Don’t Care Alliance Memory Confidential 52 Rev.1.1 July /2011 AS4C32M16D1 Figure 34. Auto Refresh Mode tCK tCH tCL CK CK tIS tIH CKE VALID VALID tIS tIH COMMAND NOP PRE NOP NOP AR NOP AR NOP NOP ACT A0-A9 RA A11,A12 RA ALL BANKS RA A10 ONE BANKS tIS tIH BA0,BA1 BA *Bank(s) DQS DQ DM tRP tRFC tRFC * = “Don't Care”, if A10 is HIGH at this point; A10 must be HIGH if more than one bank is active (i.e., must precharge all active banks) PRE = PRECHARGE, ACT = ACTIVE, RA = Row Address, BA = Bank Address, AR = AUTOREFRESH NOP commands are shown for ease of illustration; other valid commands may be possible after tRFC DM, DQ and DQS signals are all “Don't Care”/High-Z for operations shown Don’t Care Alliance Memory Confidential 53 Rev.1.1 July /2011 AS4C32M16D1 Figure 35. Self Refresh Mode tCK tCH CK Clock must be stable before Exiting Self Refresh mode tCL CK tIS tIH CKE tIS tIS tIS tIH COMMAND NOP NOP AR VALID tIS tIH VALID ADDR DQS DQ DM tRP* tXSNR/ tXSRD** Enter Self Refresh mode Exit Self Refresh mode * = Device must be in the “All banks idle” state prior to entering Self Refresh mode ** = tXSNR is required before any non-READ command can be applied, and tXSRD (200 cycles of CK) is required before a READ command can be applied. Don’t Care Alliance Memory Confidential 54 Rev.1.1 July /2011 AS4C32M16D1 Figure 36. Read without Auto Precharge tCK tCH tCL CK CK tIH tIS tIH CKE VALID VALID VALID NOP NOP NOP tIS tIH NOP COMMAND READ PRE NOP NOP NOP ACT tIS tIH Col n A0-A9 RA RA A11,A12 tIS tIH ALL BANKS RA A10 DIS AP ONE BANKS tIS tIH Bank X BA0,BA1 Bank X *Bank X CL=3 tRP DM Case 1: tAC/tDQSCK=min tDQSCK min tRPRE tRPST DQS tLZ min DQ DO n tLZ tAC min Case 2: tAC/tDQSCK=max min tDQSCK max tRPRE tRPST DQS tLZ max DQ tLZ max tHZ max DO n tAC max DO n = Data Out from column n Burst Length = 4 in the case shown 3 subsequent elements of Data Out are provided in the programmed order following DO n DIS AP = Disable Autoprecharge * =“Don't Care”, if A10 is HIGH at this point PRE = PRECHARGE, ACT = ACTIVE, RA = Row Address, BA = Bank Address, AR = AUTOREFRESH NOP commands are shown for ease of illustration; other commands may be valid at these times Precharge may not be issued before tRAS ns after the ACTIVE command for applicable banks Alliance Memory Confidential 55 Don’t Care Rev.1.1 July /2011 AS4C32M16D1 Figure 37. Read with Auto Precharge tCK tCH tCL CK CK tIH tIS tIH CKE VALID VALID VALID NOP NOP NOP tIS tIH NOP COMMAND READ NOP NOP NOP NOP ACT tIS tIH Col n A0-A9 RA RA A11,A12 EN AP RA A10 tIS tIH tIS tIH Bank X BA0,BA1 Bank X CL=3 tRP DM Case 1: tAC/tDQSCK=min tDQSCK min tRPRE DQS tRPST tLZ min DO n DQ tLZ tAC min min Case 2: tAC/tDQSCK=max tDQSCK max tRPRE tRPST DQS tLZ max DQ tHZ max DO n tLZ max tAC max DO n = Data Out from column n Burst Length = 4 in the case shown 3 subsequent elements of Data Out are provided in the programmed order following DO n EN AP = Enable Autoprecharge ACT = ACTIVE, RA = Row Address NOP commands are shown for ease of illustration; other commands may be valid at these times The READ command may not be issued until tRAP has been satisfied. If Fast Autoprecharge is supported, tRAP = tRCD, else the READ may not be issued prior to tRASmin – (BL*tCK/2) Don’t Care Alliance Memory Confidential 56 Rev.1.1 July /2011 AS4C32M16D1 Figure 38. Bank Read Access tCK tCH tCL CK CK tIS tIH CKE tIS tIH NOP COMMAND ACT NOP NOP NOP READ NOP PRE NOP NOP ACT tIS tIH A0-A9 RA A11,A12 RA Col n RA tIS A10 tIH ALL BANKS RA RA tIS tIH BA0,BA1 RA Bank X DIS AP ONE BANKS Bank X *Bank X Bank X tRC tRAS tRCD tRP CL=3 DM Case 1: tAC/tDQSCK=min tDQSCK min tRPRE DQS tLZ DO n min DQ tLZ tAC tDQSCK min Case 2: tAC/tDQSCK=max min max tRPRE DQS DO n = Data Out from column n Burst Length = 4 in the case shown 3 subsequent elements of Data Out are provided in the programmed order following DO n tRPST tHZ tLZ max max DQ tRPST DO n tLZ max tAC max DIS AP = Disable Autoprecharge * = ”Don't Care”, if A10 is HIGH at this point PRE = PRECHARGE, ACT = ACTIVE, RA = Row Address, BA = Bank Address NOP commands are shown for ease of illustration; other commands may be valid at these times Note that tRCD > tRCD MIN so that the same timing applies if Autoprecharge is enabled (in which case tRAS would be limiting) Alliance Memory Confidential 57 Don’t Care Rev.1.1 July /2011 AS4C32M16D1 Figure 39. Write without Auto Precharge tCK tCH tCL CK CK tIH tIS tIH CKE VALID tIS tIH COMMAND NOP NOP NOP NOP WRITE NOP PRE NOP NOP ACT tIS tIH A0-A9 RA Col n RA A11,A12 tIS tIH ALL BANKS RA A10 ONE BANKS DIS AP tIS tIH BA0,BA1 Bank X Case 1: tDQSS=min tDQSS BA *Bank X tDSH tDQSH tRP tDSH tWR tWPST DQS tDQSL tWPRES tWPRE DI n DQ DM tDSS Case 2: tDQSS=max tDQSS tDQSH tDSS tWPST DQS tWPRES tDQSL tWPRE DI n DQ DM DI n = Data In from column n Burst Length = 4 in the case shown 3 subsequent elements of Data In are provided in the programmed order following DI n DIS AP = Disable Autoprecharge *=”Don't Care”, if A10 is HIGH at this point PRE = PRECHARGE, ACT = ACTIVE, RA = Row Address, BA = Bank Address, AR = AUTOREFRESH NOP commands are shown for ease of illustration; other commands may be valid at these times Although tDQSS is drawn only for the first DQS rising edge, each rising edge of DQS must fall within the + 25% window of the corresponding positive clock edge Precharge may not be issued before tRAS ns after the ACTIVE command for applicable banks Alliance Memory Confidential 58 Don’t Care Rev.1.1 July /2011 AS4C32M16D1 Figure 40. Write with Auto Precharge tCK tCH tCL CK CK tIS tIH CKE VALID VALID VALID NOP NOP NOP tIS tIH COMMAND NOP NOP NOP NOP WRITE NOP ACT tIS tIH A0-A9 RA Col n RA A11,A12 DIS AP RA A10 tIS tIH BA0,BA1 Bank X BA tDAL Case 1: tDQSS=min tDQSS tDSH tDQSH tDSH tWPST DQS tWPRES tDQSL tWPRE DI n DQ DM Case 2: tDQSS=max tDQSS tDSS tDQSH tDSS tWPST DQS tWPRES tDQSL tWPRE DI n DQ DM DI n = Data In from column n Burst Length = 4 in the case shown 3 subsequent elements of Data Out are provided in the programmed order following DI n EN AP = Enable Autoprecharge ACT = ACTIVE, RA = Row Address, BA = Bank Address NOP commands are shown for ease of illustration; other commands may be valid at these times Although tDQSS is drawn only for the first DQS rising edge, each rising edge of DQS must fall within the + 25% window of the corresponding positive clock edge Don’t Care Alliance Memory Confidential 59 Rev.1.1 July /2011 AS4C32M16D1 Figure 41. Bank Write Access tCK tCH tCL CK CK tIS tIH CKE tIS tIH NOP COMMAND ACT NOP NOP WRITE NOP NOP NOP NOP PRE tIS tIH A0-A9 RA A11,A12 RA A10 RA Col n tIS tIH ALL BANKS DIS AP ONE BANK tIS tIH Bank X BA0,BA1 Bank X *Bank X tRAS tRCD tWR Case 1: tDQSS=min tDQSS tDSH tDQSH tDSH tWPST DQS tWPRES tWPRE tDQSL DI n DQ DM tDSS Case 2: tDQSS=max tDQSS tDSS tDQSH tWPST DQS tWPRES tDQSL tWPRE DI n DQ DM DI n = Data In from column n Burst Length = 4 in the case shown 3 subsequent elements of Data Out are provided in the programmed order following DI n DIS AP = Disable Autoprecharge *=”Don't Care”, if A10 is HIGH at this point PRE = PRECHARGE, ACT = ACTIVE, RA = Row Address, BA = Bank Address NOP commands are shown for ease of illustration; other commands may be valid at these times Although tDQSS is drawn only for the first DQS rising edge, each rising edge of DQS must fall within the + 25% window of the corresponding positive clock edge Precharge may not be issued before tRAS ns after the ACTIVE command for applicable banks Alliance Memory Confidential 60 Don’t Care Rev.1.1 July /2011 AS4C32M16D1 Figure 42. Write DM Operation tCK tCH tCL CK CK tIS tIH CKE VALID tIS tIH COMMAND NOP NOP NOP NOP WRITE NOP PRE NOP NOP ACT tIS tIH A0-A9 RA Col n RA A11,A12 tIS tIH ALL BANKS RA A10 ONE BANKS DIS AP tIS tIH BA0,BA1 Bank X Case 1: tDQSS=min tDQSS BA *Bank X tDSH tDQSH tRP tDSH tWR tWPST DQS tDQSL tWPRES tWPRE DI n DQ DM tDSS Case 2: tDQSS=max tDQSS tDSS tDQSH tWPST DQS tWPRES tDQSL tWPRE DI n DQ DM DI n = Data In from column n Burst Length = 4 in the case shown 3 subsequent elements of Data In are provided in the programmed order following DI n DIS AP = Disable Autoprecharge *=”Don't Care”, if A10 is HIGH at this point PRE = PRECHARGE, ACT = ACTIVE, RA = Row Address, BA = Bank Address NOP commands are shown for ease of illustration; other commands may be valid at these times Although tDQSS is drawn only for the first DQS rising edge, each rising edge of DQS must fall within the + 25% window of the corresponding positive clock edge Precharge may not be issued before tRAS ns after the ACTIVE command for applicable banks Alliance Memory Confidential 61 Don’t Care Rev.1.1 July /2011 AS4C32M16D1 Figure 43. 66 Pin TSOP II Package Outline Drawing Information Units: mm D D C A2 L HE E L1 C A θ b e A1 S F (TYP) Symbol A A1 A2 b e C D E HE L L1 F θ S D y Dimension in mm Min Nom Max --0.05 0.9 0.22 --0.095 22.09 10.03 11.56 0.40 ----0° ----- ----1.0 --0.65 0.125 22.22 10.16 11.76 0.5 0.8 0.25 --0.71 --- Alliance Memory Confidential 1.2 0.2 1.1 0.45 --0.21 22.35 10.29 11.96 0.6 ----8° --0.10 Dimension in inch Min Nom Max --0.002 0.035 0.009 --0.004 0.87 0.395 0.455 0.016 ----0° ----- 62 ----0.039 --0.026 0.005 0.875 0.4 0.463 0.02 0.032 0.01 --0.028 --- 0.047 0.008 0.043 0.018 --0.008 0.88 0.405 0.471 0.024 ----8° --0.004 Rev.1.1 July /2011 AS4C32M16D1 Alliance Memory Confidential 63 Rev.1.1 July /2011