AS4C32M32MD2A-25BIN

AS4C32M32MD2A-25BIN AS4C64M16MD2A-25BIN Revision History 1G (64M x 16 and 32M x 32) Low Power DDR2 SDRAM 134ball FBGA Package AS4C64M16MD2A-25BIN/AS4C32M32MD2A-25BIN Revision Rev 1.0 Details Preliminary datasheet Date Jan 2018 Alliance Memory Inc. 511 Taylor Way, San Carlos, CA 94070 TEL: (650) 610-6800 FAX: (650) 620-9211 Alliance Memory Inc. reserves the right to change products or specification without notice Confidential - 1 of 125 - Rev.1.0 Jan. 2018 AS4C32M32MD2A-25BIN AS4C64M16MD2A-25BIN DDR Sync DRAM Features • Functionality • Configuration - VDD2 = 1.14–1.30V - 64 Meg X 16 (8 Meg X 16 X 8 Banks). - VDDCA/VDDQ = 1.14–1.30V - 32 Meg X 32 (4 Meg X 32 X 8 Banks). • Low Power Features - VDD1 = 1.70–1.95V - Interface : HSUL_12 - Low voltage power supply. - Data width : x16 / x32 - Clock frequency range : 400 MHz - Auto TCSR (Temperature Compensated Self Refresh). - Four-bit pre-fetch DDR architecture - PASR (Partial Array Self Refresh) power-saving mode. - Eight internal banks for concurrent operation - DPD (Deep Power Down) Mode. - Multiplexed, double data rate, command/address inputs; - DS (Driver Strength) Control. • Timing – Cycle Time commands entered on every CK edge - Bidirectional/differential data strobe per byte of data(DQS/DQS#). - DM masks write date at the both rising and falling edge of - 2.5ns @ RL = 6 - 3.0ns @ RL = 5 • Operating Temperature Ranges - Industrial the data strobe (-40℃ to +85℃). • Package - Programmable READ and WRITE latencies (RL/WL) - 134-Ball FBGA(10.0mm x 11.5mm x 1.0mm) - Programmable burst lengths: 4, 8, or 16 - Auto refresh and self refresh supported - All bank auto refresh and per bank auto refresh supported - Clock stop capability Table 1. Ordering Information Product Part No. Org. Temperature Max Clock (MHz) Package AS4C64M16MD2A-25BIN 64M x 16 -40°C to 85°C 400 134-ball FBGA AS4C32M32MD2A-25BIN 32M x 32 -40°C to 85°C 400 134-ball FBGA Table 2. Speed Grade Information Speed Grade DDR2L-800 Confidential Clock Frequency RL WL 400 MHz 6 3 - 2 of 125 - tRCD (ns) 18 tRP (ns) 18 Rev.1.0 Jan. 2018 AS4C32M32MD2A-25BIN AS4C64M16MD2A-25BIN Logic Block Diagram Mode Registe r Row Address R Latch & decoders R Latch & decoders RLatch & decoders R Latch & decoders R Latch & decoders RLatch & decoders RLatch & decoders Latch & decoders Bank7 Bank6 Bank5 Control Logic Command / Address Multiplex and Decode CK # CK CKE CS# CA0 CA1 CA2 CA3 CA4 CA5 CA6 CA7 CA8 CA9 x Refresh Counter Row Address Mux Bank4 Bank3 Bank2 Bank1 Bank0 4n n DRVRS DATA x DQS Generator DQ0 – DQn-1 DQS , /DQS Sense amp Bank Control Logic I/O gating DM mask logic Write FIFO And Drivers 4n 4n Bank Control Logic Mux Memory Array 3 3 Read Latch ` CK, CK# CK out CK in Column Decoder 8 Mask 4n 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 DQS , DQS# RCVRS DM ` Confidential - 3 of 125 - Rev.1.0 Jan. 2018 AS4C32M32MD2A-25BIN AS4C64M16MD2A-25BIN General Description The 1Gb Mobile Low-Power DDR2 SDRAM (LPDDR2) is a high-speed CMOS, dynamic random-access memory containing 1,073,741,824 bits. The LPDDR2-S4 device is internally configured as an eight-bank DRAM. Each of the x16’s 134,217,728 -bit banks is organized as 8,192 rows by 1024 columns by 16 bits. Each of the x32’s 134,217,728-bit banks is organized as 8,192 rows by 512 columns by 32 bits. Simplified Bus Interface State Diagram Confidential - 4 of 125 - Rev.1.0 Jan. 2018 AS4C32M32MD2A-25BIN AS4C64M16MD2A-25BIN Address Table Parameter 64Mb X 16 32Mb X 32 Configuration 8Mb x 8banks x 16 4Mb x 8banks x 32 Bank Address BA0 ~ BA2 BA0 ~ BA2 Row Address R0 ~ R12 R0 ~ R12 Column Address C0 ~ C9 C0 ~ C8 Note : 1. The least-significant column address CA0 is not transmitted on the CA bus, and is implied to be zero. Pin Description(X16) Symbol Type Description CK, CK# Input Clock : CK and CK# are differential clock inputs. All CA inputs are sampled on both rising and falling edges of CK. CS and CKE inputs are sampled at the rising edge of CK. AC timings are referenced to clock. CKE Input Clock enable : CKE HIGH activates and CKE LOW deactivates the internal clock signals, input buffers, and output drivers. Power-saving modes are entered and exited via CKE transitions. CKE is considered part of the command code. CKE is sampled at the rising edge of CK. CS# Input Chip select : CS# is considered part of the command code and is sampled at the rising edge of CK. DM0–DM1 Input Input data mask : DM is an input mask signal for WRITE data. Although DM balls are input-only, the DM loading is designed to match that of DQ and DQS balls. DM[1:0] is DM for each of the two data bytes, respectively. DQ0 – DQ15 Input Data input/output : Bidirectional data bus. Data strobe : The data strobe is bidirectional (used for read and write data) and complementary (DQS and DQS#). It is edge-aligned output with read data and centered input with write data. DQS[1:0]/DQS[1:0]# is DQS for each of the two data bytes, respectively. DQS0 – DQS1 DQS0# – DQS1# I/O CA0 – CA9 Input VDDQ VSSQ VDDCA VSSCA VDD1 VDD2 VSS VREFCA, VREFDQ Supply Supply Supply Supply Supply Supply Supply DQ Power : Provide isolated power to DQs for improved noise immunity. DQ Ground : Provide isolated ground to DQs for improved noise immunity. Command/address power supply : Command/address power supply. Command/address ground : Isolated on the die for improved noise immunity. Core power : Supply 1. Core power : Supply 2. Common ground Supply Reference voltage : VREFCA is reference for command/address input buffers, VREFDQ is reference for DQ input buffers. ZQ Reference DNU NC – – Do not use : Must be grounded or left floating. No connect : Not internally connected. (NC) – No connect : Balls indicated as (NC) are no connects, however, they could be connected together internally. Confidential Command/address inputs: Provide the command and address inputs according to the command truth table. External impedance (240 ohm) : This signal is used to calibrate the device output impedance for S4 devices. For S2 devices, ZQ should be tied to VDDCA. - 5 of 125 - Rev.1.0 Jan. 2018 AS4C32M32MD2A-25BIN AS4C64M16MD2A-25BIN Address Table Parameter 64Mb X 16 32Mb X 32 Configuration 8Mb x 8banks x 16 4Mb x 8banks x 32 Bank Address BA0 ~ BA2 BA0 ~ BA2 Row Address R0 ~ R12 R0 ~ R12 Column Address C0 ~ C9 C0 ~ C8 Note : 1. The least-significant column address CA0 is not transmitted on the CA bus, and is implied to be zero. Pin Description(X32) Symbol Type Description CK, CK# Input Clock : CK and CK# are differential clock inputs. All CA inputs are sampled on both rising and falling edges of CK. CS and CKE inputs are sampled at the rising edge of CK. AC timings are referenced to clock. CKE Input Clock enable : CKE HIGH activates and CKE LOW deactivates the internal clock signals, input buffers, and output drivers. Power-saving modes are entered and exited via CKE transitions. CKE is considered part of the command code. CKE is sampled at the rising edge of CK. CS# Input Chip select : CS# is considered part of the command code and is sampled at the rising edge of CK. DM0–DM3 Input Input data mask : DM is an input mask signal for WRITE data. Although DM balls are input-only, the DM loading is designed to match that of DQ and DQS balls. DM[3:0] is DM for each of the four data bytes, respectively. DQ0 – DQ31 Input Data input/output : Bidirectional data bus. Data strobe : The data strobe is bidirectional (used for read and write data) and complementary (DQS and DQS#). It is edge-aligned output with read data and centered input with write data. DQS[3:0]/DQS[3:0]# is DQS for each of the four data bytes, respectively. DQS0 – DQS3 DQS0# – DQS3# I/O CA0 – CA9 Input VDDQ VSSQ VDDCA VSSCA VDD1 VDD2 VSS VREFCA, VREFDQ Supply Supply Supply Supply Supply Supply Supply DQ Power : Provide isolated power to DQs for improved noise immunity. DQ Ground : Provide isolated ground to DQs for improved noise immunity. Command/address power supply : Command/address power supply. Command/address ground : Isolated on the die for improved noise immunity. Core power : Supply 1. Core power : Supply 2. Common ground Supply Reference voltage : VREFCA is reference for command/address input buffers, VREFDQ is reference for DQ input buffers. ZQ Reference DNU NC – – Do not use : Must be grounded or left floating. No connect : Not internally connected. (NC) – No connect : Balls indicated as (NC) are no connects, however, they could be connected together internally. Confidential Command/address inputs: Provide the command and address inputs according to the command truth table. External impedance (240 ohm) : This signal is used to calibrate the device output impedance for S4 devices. For S2 devices, ZQ should be tied to VDDCA. - 6 of 125 - Rev.1.0 Jan. 2018 AS4C32M32MD2A-25BIN AS4C64M16MD2A-25BIN Functional Description Mobile LPDDR2 is a high-speed SDRAM internally configured as a 8-bank memory device. LPDDR2 devices use a double data rate architecture on the command/address (CA) bus to reduce the number of input pins in the system. The 10-bit CA bus is used to transmit command, address, and bank information. Each command uses one clock cycle, during which command information is transferred on both the rising and falling edges of the clock. LPDDR2-S4 devices use a double data rate architecture on the DQ pins to achieve high-speed operation. The double data rate architecture is essentially a 4n pre-fetch architecture with an interface designed to transfer two data bits per DQ every clock cycle at the I/O pins. A single read or WRITE access for the LPDDR2-S4 effectively consists of a single 4n-bit-wide, one-clock-cycle data transfer at the internal SDRAM core and four corresponding n-bit-wide, one-half-clock-cycle data transfers at the I/O pins. Read and write accesses are burst oriented; accesses start at a selected location and continue for a programmed number of locations in a programmed sequence. Accesses begin with the registration of an ACTIVATE command followed by a READ or WRITE command. The address and BA bits registered coincident with the ACTIVATE command are used to select the row and bank to be accessed. The address bits registered coincident with the READ or WRITE command are used to select the bank and the starting column location for the burst access. Confidential - 7 of 125 - Rev.1.0 Jan. 2018 AS4C32M32MD2A-25BIN AS4C64M16MD2A-25BIN Power-Up The following sequence must be used to power up the device. Unless specified otherwise, this procedure is mandatory (see Figure1). Power-up and initialization by means other than those specified will result in undefined operation. 1. Voltage Ramp While applying power (after Ta), CKE must be held LOW (≤0.2 ×VDDCA), and all other inputs must be between VILMIN and VIHMAX. The device outputs remain at High-Z while CKE is held LOW. On or before the completion of the voltage ramp (Tb), CKE must be held LOW. DQ, DM, DQS, and DQS# voltage levels must be Between VSSQ and VDDQ during voltage ramp to avoid latch-up. CK, CK#, CS#, and CA input levels must be between VSSCA and VDDCA during voltage ramp to avoid latch up. The following conditions apply for voltage ramp : • Ta is the point when any power supply first reaches 300mV. • Noted conditions apply betweenTa and power-down (controlled or uncontrolled). • Tb is the point at which all supply and reference voltages are within their defined operating ranges. • Power ramp duration tINIT0 (Tb -Ta) must not exceed 20ms. • For supply and reference voltage operating conditions, see the Recommended DC Operating Conditions table. • The voltage difference between any ofVSS,VSSQ, andVSSCA pins must not exceed 100mV. Voltage Ramp Completion. After Ta is reached : • VDD1 must be greater than VDD2 - 200mV • VDD1 and VDD2 must be greater than VDDCAㅡ200mV • VDD1 and VDD2 must be greater than VDDQㅡ200mV • VREF must always be less than all other supply voltages Beginning at Tb, CKE must remain LOW for at least tINIT1=100ns, after which CKE can be asserted HIGH. The clock must be stable at least tINIT2 = 5 × tCK prior to the first CKE LOW-to-HIGH transition (Tc). CKE, CS#, and CA inputs must observe setup and hold requirements (tIS, tIH) with respect to the first rising clock edge (and to subsequent falling and rising edges). If any MRRs are issued, the clock period must be within the range defined for tCKb(18ns to 100ns). MRWs can be issued at normal clock frequencies as long as all AC timings are met. Some AC parameters (for example, tDQSCK) could have relaxed timings (such as tDQSCKb) before the system is appropriately configured. While keeping CKE HIGH, NOP commands must be issued for at least tINIT3=200μs (Td). 2. RESET Command After tINIT3 is satisfied, the MRW RESET command must be issued (Td). An optional PRECHARGE ALL command can be issued prior to the MRW RESET command. Wait at least tINIT4 while keeping CKE asserted and issuing NOP commands. 3.MRRs and Device Auto Initialization (DAI) Polling After tINIT4 is satisfied (Te), only MRR commands and power-down entry/exit commands are supported. After Te, CKE can go LOW in alignment with power-down entry and exit specifications (see Power-Down (page 53)). The MRR command can be used to poll the DAI bit, which indicates when device auto initialization is complete; otherwise, the controller must wait a minimum of tINIT5, or until the DAI bit is set, before proceeding. Because the memory output buffers are not properly configured by Te, some AC parameters must use relaxed timing specifications before the system is appropriately configured. After the DAI bit (MR0, DAI) is set to zero by the memory device (DAI complete), the device is in the idle state (Tf). DAI status can be determined by issuing the MRR command to MR0. The device sets the DAI bit no later than tINIT5 after the RESET command. The controller must wait at least tINIT5 or until the DAI bit is set before proceeding. Confidential - 8 of 125 - Rev.1.0 Jan. 2018 AS4C32M32MD2A-25BIN AS4C64M16MD2A-25BIN 4.ZQ Calibration After tINIT5 (Tf), the MRW initialization calibration (ZQ calibration) command can be issued to the memory (MR10). This command is used to calibrate output impedance over process, voltage, and temperature. In systems where more than one Mobile LPDDR2 device exists on the same bus, the controller must not overlap MRW ZQ calibration commands. The device is ready for normal operation after tZQINIT. 5.Normal Operation After (Tg), MRW commands must be used to properly configure the memory (output buffer drive strength, latencies, etc.). Specifically, MR1, MR2, and MR3 must be set to configure the memory for the target frequency and memory configuration. After the initialization sequence is complete, the device is ready for any valid command. After Tg, the clock frequency can be changed using the procedure described in Input Clock Frequency Changes and Clock Stop with CKE HIGH (page 62). Figure 1 : Voltage Ramp and Initialization Sequence Note : 1. High-Z on the CA bus indicates valid NOP. Table1 : Initialization Timing Parameters Parameter Value Min Max tINIT0 - 20 Unit ms Comment Maximum voltage ramp time tINIT1 100 - ns tINIT2 5 - tCK Minimum stable clock before first CKE HIGH Minimum CKE LOW time after completion of voltage ramp tINIT3 200 - μs Minimum idle time after first CKE assertion tINIT4 1 - μs Minimum idle time after RESET command tINIT5 - 10 μs Maximum duration of device auto initialization tZQINIT 1 - μs ZQ initial calibration (S4 devices only) tCKb 18 - μs Clock cycle time during boot Confidential - 9 of 125 - Rev.1.0 Jan. 2018 AS4C32M32MD2A-25BIN AS4C64M16MD2A-25BIN Initialization After RESET (Without Voltage Ramp) If the RESET command is issued before or after the power-up initialization sequence, the reinitialization procedure must begin at Td. Power-Off While powering off, CKE must be held LOW (≤0.2 ×VDDCA); all other inputs must be between VILMIN and VIHMAX. The device outputs remain at High-Z while CKE is held LOW. DQ, DM, DQS, and DQS# voltage levels must be between VSSQ and VDDQ during the power-off sequence to avoid latch-up. CK, CK#, CS#, and CA input levels must be between VSSCA and VDDCA during the power-off sequence to avoid latch-up. Tx is the point where any power supply drops below the minimum value specified in the Recommended DC Operating Conditions table. Tz is the point where all power supplies are below 300mV. After Tz, the device is powered off. Required Power Supply Conditions Between Tx and Tz: • VDD1 must be greater than VDD2 - 200mV. • VDD1 must be greater than VDDCA - 200mV. • VDD1 must be greater than VDDQ - 200mV. • VREF must always be less than all other supply voltages. The voltage difference between VSS,VSSQ, and VSSCA must not exceed 100mV. For supply and reference voltage operating conditions, see Recommended DC Operating Conditions table. Uncontrolled Power-Off When an uncontrolled power-off occurs, the following conditions must be met: • At Tx, when the power supply drops below the minimum values specified in the Recommended DC Operating Conditions table, all power supplies must be turned off and all power-supply current capacity must be at zero, except for any static charge remaining in the system. • After Tz (the point at which all power supplies first reach 300mV), the device must power off. The time between Tx and Tz must not exceed tPOFF. During this period, the relative voltage between power supplies is uncontrolled. VDD1 andVDD2 must decrease with a slope lower than 0.5V/μs between Tx and Tz. An uncontrolled power-off sequence can occur a maximum of 400 times over the life of the device. Table2 : Power-Off Timing Parameter Symbol Min Max Maximum power-off ramp time tPOFF - 2 Confidential - 10 of 125 - Unit Sec Rev.1.0 Jan. 2018 AS4C32M32MD2A-25BIN AS4C64M16MD2A-25BIN Mode Register Definition LPDDR2 devices contain a set of mode registers used for programming device operating parameters, reading device information and status, and for initiating special operations such as DQ calibration, ZQ calibration, and device reset. Mode Register Assignments and Definitions The MRR command is used to read from a register.The MRW command is used to write to a register. An “R” in the access column of the mode register assignment table indicates read-only; a “W” indicates write-only; “R/W” indicates read or WRITE capable or enabled. Table3 : Mode Register Assignments MR # MA [7:0] 0 00h Device info Function Access R OP7 OP6 RFU OP5 OP4 OP3 1 01h Device feature 1 W nWR (for AP) 2 02h Device feature 2 W 3 03h I/O config-1 W 4 04h SDRAM refresh rate R 5 05h Basic config-1 R LPDDR2 Manufacturer ID go to MR5 6 06h Basic config-2 R Revision ID1 go to MR6 7 07h Basic config-3 R Revision ID2 go to MR7 8 08h Basic config-4 R 9 09h Test mode W Vendor-specific test mode I/O calibration W Calibration code go to MR10 - RFU go to MR11 RZQI WC OP2 RFU I/O width OP0 DI DAI BT RFU TUF OP1 DNVI RFU BL Link go to MR0 go to MR1 RL and WL go to MR2 DS go to MR3 Refresh rate Density Type go to MR4 go to MR8 go to MR9 10 0Ah 11-15 0Bh≈0Fh 16 10h PASR_Bank W Bank mask go to MR16 17 11h PASR_Seg W Segment mask go to MR17 - RFU Reserved 18-19 12h–13h Reserved 20-31 14h–1Fh 32 20h 33-39 21h–27h 40 28h 41-47 29h–2Fh Reserved for NVM DQ calibration pattern A Do not use DQ calibration pattern B Do not use 48-62 30h–3Eh 63 3Fh 64-126 40h–7Eh Reserved 127 7Fh Do not use 128-190 80h–BEh 191 BFh 192-254 C0h–FEh 255 FFh Reserved RESET go to MR18 go to MR30 R See Table 28 go to MR32 go to MR33 R See Table 28 go to MR40 go to MR41 - RFU go to MR48 W X go to MR63 - RFU go to MR64 go to MR127 Reserved for vendor use RVU go to MR128 RVU go to MR192 Do not use go to MR191 Reserved for vendor use Do not use go to MR255 Notes : 1. RFU bits must be set to 0 during MRW. 2. RFU bits must be read as 0 during MRR. 3. For READs to a write-only or RFU register, DQS will be toggled and undefined data is returned. 4. RFU mode registers must not be written. 5. WRITEs to read-only registers must have no impact on the functionality of the device. Confidential - 11 of 125 - Rev.1.0 Jan. 2018 AS4C32M32MD2A-25BIN AS4C64M16MD2A-25BIN Table4 : MR0 Device information OP7 OP6 OP5 OP4 OP3 RFU RZQI OP2 OP1 DNVI DI OP0 DAI DAI (Device Auto-Initialization Status) Read–only OP0 0b : DAI complete 1b : DAI still in progress DI (Device Information) Read–only OP1 0b : SDRAM 1b : NVM DNVI (Data Not Valid Information) Read–only OP2 LPDDR2 SDRAM will not implement DNV functionality RZQI(Built in Self Test for RZQ Information) 00b : RZQ self test not executed 01b : ZQ-pin may connect to VDDCA or float Read–only OP[4:3] 10b : ZQ-pin may short to GND 11b : ZQ-pin self test completed, no error condition detected (ZQ-pin may not connect to VDDCA or float nor short to GND) Notes : 1. If RZQI is supported, it will be set upon completion of the MRW ZQ initialization calibration. 2. If ZQ is connected to VDDCA to set default calibration, OP[4:3] must be set to 01. If ZQ is not connected to VDDCA, either OP[4:3]=01 or OP[4:3]=10 could indicate a ZQ-pin assembly error. It is recommended that the assembly error be corrected. 3. In the case of a possible assembly error(either OP[4:3]=01 or OP[4:3]=10, as defined above), the device will default to factory trim settings for RON and will ignore ZQ calibration commands. In either case, the system might not function as Intended. 4. If a ZQ self test returns a value of 11b, this indicates that the device has detected a resistor connection to the ZQ pin. Note that this result cannot be used to validate the ZQ resistor value, nor does it indicate that the ZQ resistor tolerance meets the specified limits (240 ohms ±1%). Table5 : MR1 Device Feature 1 (MA[7:0] = 01h) OP7 OP6 OP5 nWR (for AP) OP4 OP3 WC BT OP2 OP1 OP0 BL 010b : BL4 (default) 011b : BL8 100b : BL16 All others : reserved BL Write - only OP[2:0] BT Write - only OP3 0b : Sequential (default) 1b : Interleaved WC Write – only OP4 0b : Wrap (default) 1b : No wrap (allowed for SDRAM BL4 only) nWR Write – only OP[7:5] 001b : nWR = 3 (default) 010b : nWR = 4 011b : nWR = 5 100b : nWR = 6 101b : nWR = 7 110b : nWR = 8 All others : reserved Note : 1. Programmed value in nWR register is the number of clock cycles which determines when to start internal precharge operation for a write burst with AP enabled. It is determined by RU(tWR / tCK). Confidential - 12 of 125 - Rev.1.0 Jan. 2018 AS4C32M32MD2A-25BIN AS4C64M16MD2A-25BIN Table6 : Burst Sequence by Burst Length(BL), Burst Type(BT), and Wrap Control(WC) BL BT Any 4 Any Seq 8 Int Any Seq 16 Int Any C3 C2 C1 C0 X X 0b 0b X X 1b 0b WC Wrap Burst Cycle Number and Burst Address Sequence 1 2 3 4 0 1 2 3 5 6 7 8 2 3 0 1 y y+ y+ y+ 0 1 1 2 2 3 3 4 5 6 7 X X X X 0b 0b No 0b Wrap 0b X 0b 1b 0b 2 3 4 5 6 7 0 1 X 1b 0b 0b 4 5 6 7 0 1 2 3 X 1b 1b 0b 6 7 0 1 2 3 4 5 X 0b 0b 0b 0 1 2 3 4 5 6 7 X 0b 1b 0b 2 3 0 1 6 7 4 5 X 1b 0b 0b 4 5 6 7 0 1 2 3 X 1b 1b 0b 6 7 4 5 2 3 0 1 Wrap 9 10 11 12 13 14 15 46 X X X 0b 0b 0b No 0b Wrap 0b 0 1 2 3 4 5 6 7 8 9 A B C D E F 0b 0b 1b 0b 2 3 4 5 6 7 8 9 A B C D E F 0 1 0b 1b 0b 0b 4 5 6 7 8 9 A B C D E F 0 1 2 3 0b 1b 1b 0b 6 7 8 9 A B C D E F 0 1 2 3 4 5 1b 0b 0b 0b Wrap 8 9 A B C D E F 0 1 2 3 4 5 6 7 1b 0b 1b 0b A B C D E F 0 1 2 3 4 5 6 7 8 9 1b 1b 0b 0b C D E F 0 1 2 3 4 5 6 7 8 9 A B 1b 1b 1b 0b E F 0 1 2 3 4 5 6 7 8 9 A B C D X X X 0b X No 0b Wrap X X illegal (not supported) illegal (not supported) illegal (not supported) Notes : 1. C0 input is not present on CA bus. It is implied zero. 2. For BL = 4, the burst address represents C[1:0]. 3. For BL = 8, the burst address represents C[2:0]. 4. For BL = 16, the burst address represents C[3:0]. 5. For no-wrap, BL4, the burst must not cross the page boundary or the sub-page boundary. The variable y can start at any address with C0 equal to 0, but must not start at any address shown in the following table. Confidential - 13 of 125 - Rev.1.0 Jan. 2018 AS4C32M32MD2A-25BIN AS4C64M16MD2A-25BIN Table7 : No – Wrap Restrictions Bus Width 1Gb Not across full page boundary X 16 3FE, 3FF, 000, 001 X 32 1FE, 1FF, 000, 001 Not across full page boundary X 16 1FE, 1FF, 200, 201 X 32 None Note : 1. No-wrap BL = 4 data orders shown are prohibited. Table8 : MR2 Device Feature 2 (MA[7:0] = 02h) OP7 OP6 OP5 OP4 OP3 OP2 RFU OP1 OP0 OP1 OP0 RL and WL 0001b : RL=3 / WL=1 (default) 0010b : RL=4 / WL=2 0011b : RL=5 / WL=2 RL and WL Write - only OP [3:0] 0100b : RL=6 / WL=3 0101b : RL=7 / WL=4 0110b : RL=8 / WL=4 All others : reserved Table9 : MR3 I/O Configuration 1 (MA [7:0] =03h) OP7 OP6 OP5 OP4 OP3 OP2 RFU DS 0000b : reserved 0001b : 34.3 ohm typical 0010b : 40 ohm typical 0011b : 48 ohm typical DS Write - only OP [3:0] 0100b : 60 ohm typical 0101b : reserved for 68.6 ohm typical 0110b : 80 ohm typical 0111b : 120 ohm typical All others : reserved Table10 : MR4 Device Temperature (MA [7:0] =04h) OP7 OP6 OP5 TUF OP4 OP3 OP2 RFU OP1 OP0 SDRAM Refresh Rate 000b : SDRAM Low temperature operating limit exceeded. SDRAM Refresh rate 001b : 4x tREF, 4x tREFlpb, 4x tREFW. Read - only OP [2:0] 010b : 2x tREF, 2x tREFlpb, 2x tREFW. 011b : 1x tREF, 1x tREFlpb, 1x tREFW ( tCK Figure 7 : Burst READ – RL = 3, BL = 8, tDQSCK < tCK Confidential - 21 of 125 - Rev.1.0 Jan. 2018 AS4C32M32MD2A-25BIN AS4C64M16MD2A-25BIN Figure 8 : tDQSCKDL Timing Notes : 1. tDQSCKDL = (tDQSCKn - tDQSCKm). 2. tDQSCKDL (MAX) is defined as the maximum of ABS (tDQSCKn - tDQSCKm) for any (tDQSCKn, tDQSCKm) pair within any 32ms rolling window. Confidential - 22 of 125 - Rev.1.0 Jan. 2018 AS4C32M32MD2A-25BIN AS4C64M16MD2A-25BIN Figure 9 : tDQSCKDM Timing Notes : 1. tDQSCKDM = (tDQSCKn - tDQSCKm). 2. tDQSCKDM (MAX) is defined as the maximum of ABS (tDQSCKn - tDQSCKm) for any (tDQSCKn, tDQSCKm) pair within any 1.6μs rolling window. Confidential - 23 of 125 - Rev.1.0 Jan. 2018 AS4C32M32MD2A-25BIN AS4C64M16MD2A-25BIN Figure 10 : tDQSCKDS Timing Notes : 1. tDQSCKDS = (tDQSCKn - tDQSCKm). 2. tDQSCKDS (MAX) is defined as the maximum of ABS (tDQSCKn - tDQSCKm) for any (tDQSCKn, tDQSCKm) pair for READs within a consecutive burst, within any 160ns rolling window. Confidential - 24 of 125 - Rev.1.0 Jan. 2018 AS4C32M32MD2A-25BIN AS4C64M16MD2A-25BIN Figure 11: Burst READ Followed by Burst WRITE – RL = 3, WL = 1, BL = 4 The minimum time from the burst READ command to the burstWRITE command is defined by the read latency (RL) and the burst length (BL). Minimum READ-to-WRITE latency is RL + RU(tDQSCK(MAX)/tCK) + BL/2 + 1 -WL clock cycles. Note that if a READ burst is truncated with a burstTERMINATE (BST) command, the effective burst length of the truncated READ burst should be used for BL when calculating the minimum READ-to-WRITE delay. Figure 12: Seamless Burst READ – RL = 3, BL = 4, CCD = 2 t A seamless burst READ operation is supported by enabling a READ command at every other clock cycle for BL = 4 operation, every fourth clock cycle for BL = 8 operation, and every eighth clock cycle for BL = 16 operation. This operation is supported as long as the banks are activated, whether the accesses read the same or different banks. Confidential - 25 of 125 - Rev.1.0 Jan. 2018 AS4C32M32MD2A-25BIN AS4C64M16MD2A-25BIN READs Interrupted by a READ A burst READ can be interrupted by another READ with a 4-bit burst boundary, provided that tCCD is met. A burst READ can be interrupted by other READs on any subsequent clock, provided that tCCD is met. Figure 13: READ Burst Interrupt Example – RL = 3, BL = 8, tCCD = 2 Note : 1. READs can only be interrupted by other READs or the BST command. Burst WRITE Command The burstWRITE command is initiated with CS# LOW, CA0 HIGH, CA1 LOW, and CA2 LOW at the rising edge of the clock. The command address bus inputs, CA5r–CA6r and CA1f–CA9f, determine the starting column address for the burst. Write latency (WL) is defined from the rising edge of the clock on which theWRITE command is issued to the rising edge of the clock from which the tDQSS delay is measured.The first valid data must be drivenWL × tCK + tDQSS from the rising edge of the clock from which the WRITE command is issued.The data strobe signal (DQS) must be driven LOW tWPRE prior to data input. The burst cycle data bits must be applied to the DQ pins tDS prior to the associated edge of the DQS and held valid until tDH after that edge. Burst data is sampled on successive edges of the DQS until the 4-, 8-, or 16-bit burst length is completed. After a burstWRITE operation, tWR must be satisfied before a PRECHARGE command to the same bank can be issued. Pin input timings are measured relative to the crosspoint of DQS and its complement, DQS#. Confidential - 26 of 125 - Rev.1.0 Jan. 2018 AS4C32M32MD2A-25BIN AS4C64M16MD2A-25BIN Figure 14 : Data Input (WRITE) Timing Figure 15 : Burst WRITE – WL = 1, BL = 4 Confidential - 27 of 125 - Rev.1.0 Jan. 2018 AS4C32M32MD2A-25BIN AS4C64M16MD2A-25BIN Figure 16: Burst WRITE Followed by Burst READ – RL = 3, WL = 1, BL = 4 Notes : 1.The minimum number of clock cycles from the burst WRITE command to the burst READ command for any bank is [WL + 1 + BL/2 + RU(tWTR / tCK)]. 2. tWTR starts at the rising edge of the clock after the last valid input data. 3. If a WRITE burst is truncated with a BST command, the effective burst length of the truncated WRITE burst should be used as BL to calculate the minimum WRITE-to-READ delay. Figure 17 : Seamless Burst WRITE – WL = 1, BL = 4, tCCD = 2 Note : 1. The seamless burst WRITE operation is supported by enabling a WRITE command every other clock for BL = 4 operation, every four clocks for BL = 8 operation, or every eight clocks for BL = 16 operation. This operation is supported for any activated bank. Confidential - 28 of 125 - Rev.1.0 Jan. 2018 AS4C32M32MD2A-25BIN AS4C64M16MD2A-25BIN WRITEs Interrupted by a WRITE A burstWRITE can only be interrupted by anotherWRITE with a 4-bit burst boundary, provided that tCCD (MIN) is met. AWRITE burst interrupt can occur on even clock cycles after the initial WRITE command, provided that tCCD (MIN) is met. Figure 18: WRITE Burst Interrupt Timing – WL = 1, BL = 8, tCCD = 2 Notes : 1. WRITEs can only be interrupted by other WRITEs or the BST command. 2. The effective burst length of the first WRITE equals two times the number of clock cycles between the first WRITE and the interrupting WRITE. BURST TERMINATE Command The BURSTTERMINATE (BST) command is initiated with CS# LOW, CA0 HIGH, CA1 HIGH, CA2 LOW, and CA3 LOW at the rising edge of the clock. A BST command can only be issued to terminate an active READ or WRITE burst. Therefore, a BST command can only be issued up to and including BL/2 - 1 clock cycles after a READ or WRITE command. The effective burst length of a READ or WRITE command truncated by a BST command is as follows : • Effective burst length = 2 × (number of clock cycles from the READ or WRITE command to the BST command). • If a READ or WRITE burst is truncated with a BST command, the effective burst length of the truncated burst should be used for BL when calculating the minimum READ-to-WRITE or WRITE-to-READ delay. • The BST command only affects the most recent READ or WRITE command. The BST command truncates an ongoing READ burst RL × tCK + tDQSCK + tDQSQ after the rising edge of the clock where the BST command is issued. The BST command truncates an on going WRITE burst WL X tCK + tDQSS after the rising edge of the clock where the BST command is issued. • The 4-bit prefetch architecture enables BST command assertion on even clock cycles following a WRITE or READ command. The effective burst length of a READ or WRITE command truncated by a BST command is thus an integer multiple of four. Confidential - 29 of 125 - Rev.1.0 Jan. 2018 AS4C32M32MD2A-25BIN AS4C64M16MD2A-25BIN Figure 19 : Burst WRITE Truncated by BST – WL = 1, BL = 16 Notes : 1. The BST command truncates an ongoing WRITE burst WL × tCK + tDQSS after the rising edge of the clock where the BST command is issued. 2. BST can only be issued an even number of clock cycles after the WRITE command. 3. Additional BST commands are not supported after T4 and must not be issued until after the next READ or WRITE command. Figure 20: Burst READ Truncated by BST – RL = 3, BL = 16 Notes : 1. The BST command truncates an ongoing READ burst (RL × tCK + tDQSCK + tDQSQ) after the rising edge of the clock where the BST command is issued. 2. BST can only be issued an even number of clock cycles after the READ command. 3. Additional BST commands are not supported after T4 and must not be issued until after the next READ or WRITE command. Confidential - 30 of 125 - Rev.1.0 Jan. 2018 AS4C32M32MD2A-25BIN AS4C64M16MD2A-25BIN Write Data Mask On LPDDR2 devices, one write data mask (DM) pin for each data byte (DQ) is supported, consistent with the implementation on LPDDR SDRAM. Each DM can mask its respective DQ for any given cycle of the burst. Data mask timings match data bit timing, but are inputs only. Internal data mask loading is identical to data bit loading to ensure matched system timing. Figure 21: Data Mask Timing Figure 22: Write Data Mask – Second Data Bit Masked Note : 1. For the data mask function, WL = 2, BL = 4 is shown; the second data bit is masked. Confidential - 31 of 125 - Rev.1.0 Jan. 2018 AS4C32M32MD2A-25BIN AS4C64M16MD2A-25BIN PRECHARGE Command The PRECHARGE command is used to precharge or close a bank that has been activated. The PRECHARGE command is initiated with CS# LOW, CA0 HIGH, CA1 HIGH, CA2 LOW, and CA3 HIGH at the rising edge of the clock. The PRECHARGE command can be used to precharge each bank independently or all banks simultaneously. For 4-bank devices, the AB flag and bank address bits BA0 and BA1 are used to determine which bank(s) to precharge. For 8-bank devices, the AB flag and the bank address bits BA0, BA1, and BA2 are used to determine which bank(s) to precharge. The precharged bank(s) will be available for subsequent row access tRPab after an all bank PRECHARGE command is issued, or tRPpb after a single-bank PRECHARGE command is issued. To ensure that 8-bank devices can meet the instantaneous current demand required to operate, the row precharge time (tRP) for an all bank PRECHARGE in 8-bank devices (tRPab) will be longer than the row precharge time for a single-bank PRECHARGE (tRPpb). ACTIVATE to PRECHARGE timing is shown in ACTIVATE Command (page 17). Table 22: Bank Selection for PRECHARGE by Address Bits AB(CA4r) BA2 (CA9r) BA1 (CA8r) BA0 (CA7r) Precharged Bank(s) 8-Bank Device 0 0 0 0 Bank 0 only 0 0 0 1 Bank 1 only 0 0 1 0 Bank 2 only 0 0 1 1 Bank 3 only 0 1 0 0 Bank 4 only 0 1 0 1 Bank 5 only 0 1 1 0 Bank 6 only 0 1 1 1 Bank 7 only 1 Don’t Care Don’t Care Don’t Care All Banks READ Burst Followed by PRECHARGE For the earliest possible precharge, the PRECHARGE command can be issued BL/2 clock cycles after a READ command. A new bank ACTIVATE command can be issued to the same bank after the row precharge time (tRP) has elapsed. A PRECHARGE command cannot be issued until after tRAS is satisfied. The minimum READ-to-PRECHARGE time (tRTP) must also satisfy a minimum analog time from the rising clock edge that initiates the last 4-bit prefetch of a READ command. tRTP begins BL/2 - 2 clock cycles after the READ command. If the burst is truncated by a BST command, the effective BL value is used to calculate when tRTP begins. Confidential - 32 of 125 - Rev.1.0 Jan. 2018 AS4C32M32MD2A-25BIN AS4C64M16MD2A-25BIN Figure 23: READ Burst Followed by PRECHARGE – RL = 3, BL = 8, RU(tRTP(MIN)/tCK) = 2 Figure 24: READ Burst Followed by PRECHARGE – RL = 3, BL = 4, RU(tRTP(MIN)/tCK) = 3 WRITE Burst Followed by PRECHARGE For WRITE cycles, a WRITE recovery time (tWR) must be provided before a PRECHARGE command can be issued. tWR delay is referenced from the completion of the burst WRITE. The PRECHARGE command must not be issued prior to the tWR delay. For WRITE-to-PRECHARGE timings see Table 23. These devices write data to the array in prefetch quadruples (prefetch = 4). An internal WRITE operation can only begin after a prefetch group has been completely latched. The minimum WRITE-to-PRECHARGE time for commands to the same bank is WL + BL/2 + 1 + RU(tWR/tCK) clock cycles. For untruncated bursts, BL is the value set in the mode register. For truncated bursts, BL is the effective burst length. Confidential - 33 of 125 - Rev.1.0 Jan. 2018 AS4C32M32MD2A-25BIN AS4C64M16MD2A-25BIN Figure 25 : WRITE Burst Followed by PRECHARGE – WL = 1, BL = 4 Auto Precharge Before a new row can be opened in an active bank, the active bank must be precharged using either the PRECHARGE command or the auto precharge function.When a READ or WRITE command is issued to the device, the auto precharge bit (AP) can be set to enable the active bank to automatically begin precharge at the earliest possible moment during the burst READ or WRITE cycle. If AP is LOW when the READ or WRITE command is issued, then normal READ or WRITE burst operation is executed and the bank remains active at the completion of the burst. If AP is HIGH when the READ or WRITE command is issued, the auto precharge function is engaged. This feature enables the PRECHARGE operation to be partially or completely hidden during burst READ cycles (dependent upon READ or WRITE latency), thus improving system performance for random data access. READ Burst with Auto Precharge If AP (CA0f) is HIGH when a READ command is issued, the READ with auto precharge function is engaged. These devices start an auto precharge on the rising edge of the clock BL/2 or BL/2 - 2 + RU(tRTP/tCK) clock cycles later than the READ with auto precharge command, whichever is greater. For auto precharge calculations see Table 23 . Following an auto precharge operation, an ACTIVATE command can be issued to the same bank if the following two conditions are satisfied simultaneously: • The RAS precharge time (tRP) has been satisfied from the clock at which the auto precharge begins. • The RAS cycle time (tRC) from the previous bank activation has been satisfied. Confidential - 34 of 125 - Rev.1.0 Jan. 2018 AS4C32M32MD2A-25BIN AS4C64M16MD2A-25BIN Figure 26 : READ Burst with Auto Precharge – RL = 3, BL = 4, RU(tRTP(MIN)/tCK) = 2 WRITE Burst with Auto Precharge If AP (CA0f) is HIGH when aWRITE command is issued, theWRITE with auto precharge function is engaged. The device starts an auto precharge at the clock rising edge tWR cycles after the completion of the burst WRITE. Following a WRITE with auto precharge, an ACTIVATE command can be issued to the same bank if the following two conditions are met: • The RAS precharge time (tRP) has been satisfied from the clock at which the auto precharge begins. • The RAS cycle time (tRC) from the previous bank activation has been satisfied. Figure 27 : Write Burst with Auto Precharge – WL=1, BL=4 Confidential - 35 of 125 - Rev.1.0 Jan. 2018 AS4C32M32MD2A-25BIN AS4C64M16MD2A-25BIN Table23 : Precharge and Auto Precharge Clarification From Command READ BST READ w/AP WRITE BST WRITE w/AP Precharge Precharge all To Command Precharge to same bank as read Minimum Delay Between Commands BL/2 + MAX(2, RU(tRTP/tCK)) - 2 Unit Notes CLK 1 Precharge all BL/2 + MAX(2, RU(tRTP/tCK)) - 2 CLK 1 Precharge to same bank as read 1 CLK 1 Precharge all 1 CLK 1 Precharge to same bank as read w/AP BL/2 + MAX(2, RU(tRTP/tCK)) - 2 CLK 1, 2 Precharge all BL/2 + MAX(2, RU(tRTP/tCK)) - 2 CLK 1 Activate to same bank as read w/AP BL/2 + MAX(2, RU(tRTP/tCK)) - 2 + RU(tRPpb/tCK) CLK 1 Write or WRITE w/AP (same bank) Illegal CLK 3 Write or WRITE w/AP (different bank) RL + BL/2 + RU(tDQSCKmax/tCK) - WL + 1 CLK 3 Read or read w/AP (same bank) Illegal CLK 3 Write or WRITE w/AP (different bank) BL/2 CLK 3 Precharge to same bank as write WL + BL/2 + RU(tWR/tCK) + 1 CLK 1 Precharge all WL + BL/2 + RU(tWR/tCK) + 1 CLK 1 Precharge to same bank as write Precharge all Precharge to same bank as WRITE w/AP Precharge all Activate to same bank as write w/AP Write or WRITE w/ap (same bank) Write or WRITE w/ap (different bank) Read or read w/ap (same bank) Read or read w/ap (different bank) Precharge to same bank as precharge Precharge all Precharge Precharge all WL + RU(tWR/tCK) + 1 WL + RU(tWR/tCK) + 1 CLK CLK 1 1 WL + BL/2 + RU(tWR/tCK) + 1 CLK 1, 2 WL + BL/2 + RU(tWR/tCK) + 1 WL + BL/2 + RU(tWR/tCK) + 1 + RU(tRPpb/tCK) Illegal BL/2 Illegal WL + BL/2 + RU(tWTR/tCK) + 1 1 1 1 1 CLK CLK CLK CLK CLK CLK CLK CLK CLK CLK 1 1 3 3 3 3 1 1 1 1 Notes : 1. For a given bank, the PRECHARGE period should be counted from the latest PRECHARGE command either a one-bank RECHARGE or PRECHARGE ALL issued to that bank. The PRECHARGE period is satisfied after tRP, depending on the latest PRECHARGE command issued to that bank. 2. Any command issued during the specified minimum delay time is illegal. 3. After READ with auto precharge, seamless READ operations to different banks are supported. After WRITE with auto precharge, seamless WRITE operations to different banks are supported. READ with auto precharge and WRITE with auto precharge must not be interrupted or truncated. Confidential - 36 of 125 - Rev.1.0 Jan. 2018 AS4C32M32MD2A-25BIN AS4C64M16MD2A-25BIN REFRESH Command The REFRESH command is initiated with CS# LOW, CA0 LOW, CA1 LOW, and CA2 HIGH at the rising edge of the clock. Per-bank REFRESH is initiated with CA3 LOW at the rising edge of the clock. All-bank REFRESH is initiated with CA3 HIGH at the rising edge of the clock. Per-bank REFRESH is only supported in devices with eight banks. A per-bank REFRESH command (REFpb) performs a per-bank REFRESH operation to the bank scheduled by the bank counter in the memory device.The bank sequence for per-bank REFRESH is fixed to be a sequential round-robin : 0-1-2-3-4-5-6-7-0-1-.... The bank count is synchronized between the controller and the SDRAM by resetting the bank count to zero. Synchronization can occur upon issuing a RESET command or at every exit from self refresh. Bank addressing for the per-bank REFRESH count is the same as established for the single-bank PRECHARGE command (see Table 22). A bank must be idle before it can be refreshed. The controller must track the bank being refreshed by the per-bank REFRESH command. The REFpb command must not be issued to the device until the following conditions have been met: • tRFCab has been satisfied after the prior REFab command. • tRFCpb has been satisfied after the prior REFpb command. • tRP has been satisfied after the prior PRECHARGE command to that bank . • tRRD has been satisfied after the prior ACTIVATE command (if applicable, for example after activating a row in a different bank than the one affected by the REFpb command). The target bank is inaccessible during per-bank REFRESH cycle time (tRFCpb), however, other banks within the device are accessible and can be addressed during the cycle. During the REFpb operation, any of the banks other than the one being refreshed can be maintained in an active state or accessed by a READ or WRITE command. When the per-bank REFRESH cycle has completed, the affected bank will be in the idle state. After issuing REFpb, the following conditions must be met: • tRFCpb must be satisfied before issuing a REFab command. • tRFCpb must be satisfied before issuing an ACTIVATE command to the same bank. • tRRD must be satisfied before issuing an ACTIVATE command to a different bank. • tRFCpb must be satisfied before issuing another REFpb command. An all-bank REFRESH command (REFab) issues a REFRESH command to all banks. All banks must be idle when REFab is issued (for instance, by issuing a PRECHARGE ALL command prior to issuing an all-bank REFRESH command). REFab also synchronizes the bank count between the controller and the SDRAM to zero. The REFab command must not be issued to the device until the following conditions have been met: • tRFCab has been satisfied following the prior REFab command. • tRFCpb has been satisfied following the prior REFpb command. • tRP has been satisfied following the prior PRECHARGE commands. After an all-bank REFRESH cycle has completed, all banks will be idle. After issuing REFab: • tRFCab latency must be satisfied before issuing an ACTIVATE command. • tRFCab latency must be satisfied before issuing a REFab or REFpb command. Confidential - 37 of 125 - Rev.1.0 Jan. 2018 AS4C32M32MD2A-25BIN AS4C64M16MD2A-25BIN Table24 : Refresh Command Scheduling Separation Requirements Symbol Minimum delay From To Notes REFab tRFCab REFab ACTIVATE command to any bank REFpb REFab tRFCpb REFpb ACTIVATE command to same bank as REFpb REFpb REFpb tRRD ACTIVATE ACTIVATE command to a different bank than REFpb REFpb 1 ACTIVATE command to a different bank than the prior ACTIVATE command Note : 1. A bank must be in the idle state before it is refreshed, so REFab is prohibited following an ACTIVATE command. REFpb is supported only if it affects a bank that is in the idle state. Mobile LPDDR2 devices provide significant flexibility in scheduling REFRESH commands as long as the required boundary conditions are met (see Figure 32). In the most straightforward implementations, a REFRESH command should be scheduled every tREFI. In this case, self refresh can be entered at any time. Users may choose to deviate from this regular refresh pattern, for instance, to enable a period in which no refresh is required. As an example, using a 1Gb LPDDR2 device, the user can choose to issue a refresh burst of 4096 REFRESH comands at the maximum supported rate (limited by tREFBW), followed by an extended period without issuing any REFRESH commands, until the refresh window is complete. The maximum supported time without REFRESH commands is calculated as follows : tREFW - (R/8) × tREFBW = tREFW - R × 4 × tRFCab. For example, a 1Gb device atTC ≤ 85˚C can be operated without a refresh for up to 32ms - 4096 × 4 × 130ns ≈ 30ms. Both the regular and the burst/pause patterns can satisfy refresh requirements if they are repeated in every 32ms window. It is critical to satisfy the refresh requirement in every rolling refresh window during refresh pattern transitions. The supported transition from a burst pattern to a regular distributed pattern is shown in Figure 28. If this transition occurs immediately after the burst refresh phase, all rolling tREFW intervals will meet the minimum required number of REFRESH commands. A nonsupported transition is shown in Figure 55. In this example, the regular refresh pattern starts after the completion of the pause phase of the burst/pause refresh pattern. For several rolling tREFW intervals, the minimum number of REFRESH commands is not satisfied. Understanding this pattern transition is extremely important, even when only one pattern is employed. In self refresh mode, a regular distributed refresh pattern must be assumed. Alliance Memory recommends entering self refresh mode immediately following the burst phase of a burst/pause refresh pattern; upon exiting self refresh, begin with the burst phase (see Figure 31). Confidential - 38 of 125 - Rev.1.0 Jan. 2018 AS4C32M32MD2A-25BIN AS4C64M16MD2A-25BIN Figure29 : Regular Distributed Refresh Pattern Notes : 1. Compared to repetitive burst REFRESH with subsequent REFRESH pause. 2. As an example, in a 1Gb LPDDR2 device at TC ≤ 85˚C, the distributed refresh pattern has one REFRESH command per 7.8μs; the burst refresh pattern has one REFRESH command per 0.52μs, followed by ≈ 30ms without any REFRESH command. Confidential - 39 of 125 - Rev.1.0 Jan. 2018 AS4C32M32MD2A-25BIN AS4C64M16MD2A-25BIN Figure28 : Supported Transition from Repetitive REFRESH Burst Notes : 1. Shown with subsequent REFRESH pause to regular distributed refresh pattern. 2. As an example, in a 1Gb LPDDR2 device at TC ≤ 85˚C, the distributed refresh pattern has one REFRESH command per 7.8μs; the burst refresh pattern has one REFRESH command per 0.52μs, followed by ≈ 30ms without any REFRESH command. Confidential - 40 of 125 - Rev.1.0 Jan. 2018 AS4C32M32MD2A-25BIN AS4C64M16MD2A-25BIN Figure30 : Nonsupported Transition from Repetitive REFRESH Burst Notes : 1. Shown with subsequent REFRESH pause to regular distributed refresh pattern. 2. There are only ≈ 2048 REFRESH commands in the indicated tREFW window. This does not provide the required minimum number of REFRESH commands (R). PDF: Confidential - 41 of 125 - Rev.1.0 Jan. 2018 AS4C32M32MD2A-25BIN AS4C64M16MD2A-25BIN Figure31 : Recommended Self Refresh Entry and Exit Note : 1. In conjunction with a burst/pause refresh pattern. REFRESH Requirements 1. Minimum Number of REFRESH Commands Mobile LPDDR2 requires a minimum number, R, of REFRESH (REFab) commands within any rolling refresh window (tREFW = 32 ms @ MR4[2:0] = 011 orTC ≤ 85˚C). For actual values per density and the resulting average refresh interval (tREFI), (see Table 75). For tREFW and tREFI refresh multipliers at different MR4 settings, see the MR4 Device Temperature (MA[7:0] = 04h) table. For devices supporting per-bank REFRESH, a REFab command can be replaced by a full cycle of eight REFpb commands. 2. Burst REFRESH Limitation To limit current consumption, a maximum of eight REFab commands can be issued in any rolling tREFBW (tREFBW = 4 × 8 × tRFCab). This condition does not apply if REFpb commands are used. 3. REFRESH Requirements and Self Refresh If any time within a refresh window is spent in self refresh mode, the number of required REFRESH commands in that window is reduced to the following: R´ = RU tSRF = R - RU R × tSRF tREFW tREFI Where RU represents the round-up function. Confidential - 42 of 125 - Rev.1.0 Jan. 2018 AS4C32M32MD2A-25BIN AS4C64M16MD2A-25BIN Figure 32: tSRF Definition Notes : 1. Time in self refresh mode is fully enclosed in the refresh window (tREFW). 2. At self refresh entry. 3. At self refresh exit. 4. Several intervals in self refresh during one tREFW interval. In this example, tSRF = tSRF1 + tSRF2. Figure 33 All-Bank REFRESH Operation Figure 34 Per-Bank REFRESH Operation Notes : 1. Prior to T0, the REFpb bank counter points to bank 0. 2. Operations to banks other than the bank being refreshed are supported during the tRFCpb period. Confidential - 43 of 125 - Rev.1.0 Jan. 2018 AS4C32M32MD2A-25BIN AS4C64M16MD2A-25BIN SELF REFRESH Operation The SELF REFRESH command can be used to retain data in the array, even if the rest of the system is powered down. When in the self refresh mode, the device retains data without external clocking. The device has a built-in timer to accommodate SELF REFRESH operation. The SELF REFRESH command is executed by taking CKE LOW, CS# LOW, CA0 LOW, CA1 LOW, and CA2 HIGH at the rising edge of the clock. CKE must be HIGH during the clock cycle preceding a SELF REFRESH command. A NOP command must be driven in the clock cycle following the SELF REFRESH command. After the power-down command is registered, CKE must be held LOW to keep the device in self refresh mode. Mobile LPDDR2 devices can operate in self refresh mode in both the standard and extended temperature ranges. These devices also manage self refresh power consumption when the operating temperature changes, resulting in the lowest possible power consumption across the operating temperature range. See Table 59 for details. After the device has entered self refresh mode, all external signals other than CKE are “Don’t Care.” For proper self refresh operation, power supply pins (VDD1, VDD2, VDDQ, and VDDCA) must be at valid levels. VDDQ can be turned off during self refresh. If VDDQ is turned off, VREFDQ must also be turned off. Prior to exiting self refresh, both VDDQ and VREFDQ must be within their respective minimum/maximum operating ranges (see the Single-Ended AC and DC Input Levels for DQ and DM table). VREFDQ can be at any level between 0 and VDDQ; VREFCA can be at any level between 0 and VDDCA during self refresh. Before exiting self refresh, VREFDQ and VREFCA must be within specified limits (see AC and DC Logic Input Measurement Levels for Single-Ended Signals (page 78)). After entering self refresh mode, the device initiates at least one all-bank REFRESH command internally during tCKESR. The clock is internally disabled during SELF REFRESH operation to save power. The device must remain in self refresh mode for at least tCKESR. The user can change the external clock frequency or halt the external clock one clock after self refresh entry is registered; however, the clock must be restarted and stable before the device can exit SELF REFRESH operation. Exiting self refresh requires a series of commands. First, the clock must be stable prior to CKE returning HIGH. After the self refresh exit is registered, a minimum delay, at least equal to the self refresh exit interval (tXSR), must be satisfied before a valid command can be issued to the device. This provides completion time for any internal refresh in progress. For proper operation, CKE must remain HIGH throughout tXSR, except during self refresh re-entry. NOP commands must be registered on each rising clock edge during tXSR. Using self refresh mode introduces the possibility that an internally timed refresh event could be missed when CKE is driven HIGH for exit from self refresh mode. Upon exiting self refresh, at least one REFRESH command (one all-bank command or eight per-bank commands) must be issued before issuing a subsequent SELF REFRESH command. Confidential - 44 of 125 - Rev.1.0 Jan. 2018 AS4C32M32MD2A-25BIN AS4C64M16MD2A-25BIN Figure 35: SELF REFRESH Operation Notes : 1. Input clock frequency can be changed or stopped during self refresh, provided that upon exiting self-refresh, a minimum of two cycles of stable clocks are provided, and the clock frequency is between the minimum and maximum frequencies for the particular speed grade. 2. The device must be in the all banks idle state prior to entering self refresh mode. 3. tXSR begins at the rising edge of the clock after CKE is driven HIGH. 4. A valid command can be issued only after tXSR is satisfied. NOPs must be issued during tXSR. Partial-Array Self Refresh – Bank Masking Devices in densities of 64Mb–512Mb are comprised of four banks; densities of 1Gb and higher are comprised of eight banks. Each bank can be configured independently whether or not a SELF REFRESH operation will occur in that bank. One 8-bit mode register (accessible via the MRW command) is assigned to program the bank-masking status of each bank up to eight banks. For bank masking bit assignments, see the MR16 PASR Bank Mask (MA[7:0] = 010h) and MR16 Op-Code Bit Definitions tables. The mask bit to the bank enables or disables a refresh operation of the entire memory space within the bank. If a bank is masked using the bank mask register, a REFRESH operation to the entire bank is blocked and bank data retention is not guaranteed in self refresh mode.To enable a REFRESH operation to a bank, the corresponding bank mask bit must be programmed as “unmasked.”When a bank mask bit is unmasked, the array space being refreshed within that bank is determined by the programmed status of the segment mask bits. Partial-Array Self Refresh – Segment Masking Programming segment mask bits is similar to programming bank mask bits. For densities 1Gb and higher, eight segments are used for masking (see the MR17 PASR Segment Mask (MA[7:0] = 011h) and MR17 PASR Segment Mask Definitions tables). A mode register is used for programming segment mask bits up to eight bits. For densities less than 1Gb, segment masking is not supported. When the mask bit to an address range (represented as a segment) is programmed as “masked,” a REFRESH operation to that segment is blocked. Conversely, when a segment mask bit to an address range is unmasked, refresh to that segment is enabled. A segment masking scheme can be used in place of or in combination with a bank masking scheme. Each segment mask bit setting is applied across all banks. For segment masking bit assignments, see the tables noted above. Confidential - 45 of 125 - Rev.1.0 Jan. 2018 AS4C32M32MD2A-25BIN AS4C64M16MD2A-25BIN Table26 : Bank and Segment Masking Example Segment Mask(MR17) Bank0 Bank Mask(MR16) Bank1 Bank2 Bank3 Bank4 Bank5 Bank6 Bank7 0 1 0 0 0 0 0 1 Segment 0 0 - M - - - - - M Segment 1 0 - M - - - - - M Segment 2 1 M M M M M M M M Segment 3 0 - M - - - - - M Segment 4 0 - M - - - - - M Segment 5 0 - M - - - - - M Segment 6 0 - M - - - - - M Segment 7 1 M M M M M M M M Note : 1. This table provides values for an 8-bank device with REFRESH operations masked to banks 1 and 7, and segments 2 and 7. MODE REGISTER READ The MODE REGISTER READ (MRR) command is used to read configuration and status data from SDRAM mode registers. The MRR command is initiated with CS# LOW, CA0 LOW, CA1 LOW, CA2 LOW, and CA3 HIGH at the rising edge of the clock. The mode register is selected by CA1f–CA0f and CA9r–CA4r.The mode register contents are available on the first data beat of DQ[7:0] after RL × tCK + tDQSCK + tDQSQ and following the rising edge of the clock where MRR is issued. Subsequent data beats contain valid but undefined content, except in the case of the DQ calibration function, where subsequent data beats contain valid content as described in Table 28. All DQS are toggled for the duration of the mode register READ burst. The MRR command has a burst length of four. MRR operation (consisting of the MRR command and the corresponding data traffic) must not be interrupted.The MRR command period (tMRR) is two clock cycles. Figure 36: MRR Timing – RL = 3, tMRR = 2 Notes : 1. MRRs to DQ calibration registers MR32 and MR40 are described in DQ Calibration (page 48). Confidential - 46 of 125 - Rev.1.0 Jan. 2018 AS4C32M32MD2A-25BIN AS4C64M16MD2A-25BIN Notes : 1. MRRs to DQ calibration registers MR32 and MR40 are described in DQ Calibration (page 48). 2. Only the NOP command is supported during tMRR. 3. Mode register data is valid only on DQ[7:0] on the first beat. Subsequent beats contain valid but undefined data. DQ[MAX:8] contain valid but undefined data for the duration of the MRR burst. 4. Minimum MRR to write latency is RL + RU(tDQSCKmax/tCK) + 4/2 + 1 - WL clock cycles. 5. Minimum MRR to MRW latency is RL + RU(tDQSCKmax/tCK) + 4/2 + 1 clock cycles. READ bursts andWRITE bursts cannot be truncated by MRR. Following a READ command, the MRR command must not be issued before BL/2 clock cycles have completed. Following A WRITE command, the MRR command must not be issued before WL + 1 + BL/2 + RU(tWTR/tCK) clock cycles have completed. If a READ or WRITE burst is truncated with a BST command, the effective burst length of the truncated burst should be used for the BL value. Figure 37: READ to MRR Timing – RL = 3, tMRR = 2 Notes : 1. The minimum number of clock cycles from the burst READ command to the MRR command is BL/2. 2. Only the NOP command is supported during tMRR. Confidential - 47 of 125 - Rev.1.0 Jan. 2018 AS4C32M32MD2A-25BIN AS4C64M16MD2A-25BIN Figure 38: Burst WRITE Followed by MRR – RL = 3, WL = 1, BL = 4 Notes : 1. The minimum number of clock cycles from the burst WRITE command to the MRR command is [WL+1+BL/2+ RU(tWTR/tCK)]. 2. Only the NOP command is supported during tMRR. Temperature Sensor Mobile LPDDR2 devices feature a temperature sensor whose status can be read from MR4. This sensor can be used to determine an appropriate refresh rate, determine whether AC timing derating is required in the extended temperature range, and/or monitor the operating temperature. Either the temperature sensor or the device operating temperature can be used to determine whether operating temperature requirements are being met (see Operating Temperature Range table). Temperature sensor data can be read from MR4 using the mode register read protocol. Upon exiting self-refresh or power-down, the device temperature status bits will be no older than tTSI. When using the temperature sensor, the actual device case temperature may be higher than the operating temperature specification that applies for the standard or extended temperature ranges (see table noted above). For example,TCASE could be above 85˚C when MR4[2:0] equals 011b. To ensure proper operation using the temperature sensor, applications must accommodate the parameters in the temperature sensor definitions table. Table 27: Temperature Sensor Definitions and Operating Conditions Parameter Description Symbol System Maximum temperature gradient experienced by the memory TempGradient Temperature Gradient device at the temperature of interest over a range of 2˚C MR4 READ interval Time period between MR4 READs from the System Temperature Sensor interval Maximum delay between internal updates of MR4 System response delay Maximum response time from an MR4 READ to the system response Device temperature margin Confidential Margin above maximum temperature to support controller response - 48 of 125 - Min/Max MAX Value Unit System dependent System dependent ˚C/s ReadInterval MAX tTSI MAX 32 ms SysRespDelay MAX System dependent ms TempMargin MAX 2 ˚C Rev.1.0 ms Jan. 2018 AS4C32M32MD2A-25BIN AS4C64M16MD2A-25BIN Mobile LPDDR2 devices accommodate the temperature margin between the point at which the device temperature enters the extended temperature range and the point at which the controller reconfigures the system accordingly. To determine the required MR4 polling frequency, the system must use the maximum TempGradient and the maximum response time of the system according to the following equation: TempGradient × (ReadInterval + tTSI + SysRespDelay) ≤ 2°C For example, ifTempGradient is 10˚C/s and the SysRespDelay is 1ms: 10°C/s X (ReadInterval + 32ms +1ms) ≤ 2°C In this case, ReadInterval must not exceed 167ms. Figure 39: Temperature Sensor Timing DQ Calibration Mobile LPDDR2 devices feature a DQ calibration function that outputs one of two predefined system timing calibration patterns. For x16 devices, pattern A (MRR to MRR32), and pattern B (MRR to MRR40), will return the specified pattern on DQ0 and DQ8; x32 devices return the specified pattern on DQ0, DQ8, DQ16, and DQ24. For x16 devices, DQ[7:1] and DQ[15:9] drive the same information as DQ0 during the MRR burst. For x32 devices, DQ[7:1], DQ[15:9], DQ[23:17], and DQ[31:25] drive the same information as DQ0 during the MRR burst. MRR DQ calibration commands can occur only in the idle state. Confidential - 49 of 125 - Rev.1.0 Jan. 2018 AS4C32M32MD2A-25BIN AS4C64M16MD2A-25BIN Figure 40: MR32 and MR40 DQ Calibration Timing – RL = 3, tMRR = 2 Note : 1. Only the NOP command is supported during tMRR. Table28 : Data Calibration Pattern Description Pattern MR# Bit Time 0 Bit Time 1 Bit Time 2 Bit Time 3 Description Pattern A MR32 1 0 1 0 Reads to MR32 return DQ calibration pattern A Pattern B MR40 0 0 1 1 Reads to MR40 return DQ calibration pattern B Confidential - 50 of 125 - Rev.1.0 Jan. 2018 AS4C32M32MD2A-25BIN AS4C64M16MD2A-25BIN MODE REGISTER WRITE Command The MODE REGISTER WRITE (MRW) command is used to write configuration data to the mode registers. The MRW command is initiated with CS# LOW, CA0 LOW, CA1 LOW, CA2 LOW, and CA3 LOW at the rising edge of the clock. The mode register is selected by CA1f–CA0f, CA9r–CA4r.The data to be written to the mode register is contained in CA9f–CA2f. The MRW command period is defined by tMRW. MRWs to read-only registers have no impact on the functionality of the device. MRW can only be issued when all banks are in the idle precharge state. One method of ensuring that the banks are in this state is to issue a PRECHARGE ALL command. Figure 41: MODE REGISTER WRITE Timing – RL = 3, tMRW = 5 Notes : 1. At time Ty, the device is in the idle state. 2. Only the NOP command is supported during tMRW. Table29 : Truth Table for MRR and MRW Current State All banks idle Bank(s) active Command MRR MRW MRW (RESET) MRR MRW MRW (RESET) Intermediate State Reading mode register, all banks idle Writing mode register, all banks idle Resetting, device auto initialization Reading mode register, bank(s) idle Not allowed Not allowed Next State All banks idle All banks idle All banks idle Bank(s) active Not allowed Not allowed MRW RESET Command The MRW RESET command brings the device to the device auto initialization (resetting) state in the power-on initialization sequence (see 2. RESET Command under Power-Up (page 7)). The MRW RESET command can be issued from the idle state. This command resets all mode registers to their default values. Only the NOP command is supported during tINIT4. After MRW RESET, boot timings must be observed until the device initialization sequence is complete and the device is in the idle state. Array data is undefined after the MRW RESET command has completed. For MRW RESET timing, see Figure 1. Confidential - 51 of 125 - Rev.1.0 Jan. 2018 AS4C32M32MD2A-25BIN AS4C64M16MD2A-25BIN MRW ZQ Calibration Commands The MRW command is used to initiate a ZQ calibration command that calibrates output driver impedance across process, temperature, and voltage. LPDDR2-S4 devices support ZQ calibration.To achieve tighter tolerances, proper ZQ calibration must be performed. There are four ZQ calibration commands and related timings: tZQINIT, tZQRESET, tZQCL, and tZQCS. tZQINIT is used for initialization calibration; tZQRESET is used for resetting ZQ to the default output impedance; tZQCL is used for long calibration(s); and tZQCS is used for short calibration(s). See the MR10 Calibration (MA[7:0] = 0Ah) table for ZQ calibration command code definitions. ZQINIT must be performed for LPDDR2 devices. ZQINIT provides an output impedance accuracy of ±15%. After initialization, the ZQ calibration long (ZQCL) can be used to recalibrate the system to an output impedance accuracy of ±15%. A ZQ calibration short (ZQCS) can be used periodically to compensate for temperature and voltage drift in the system. ZQRESET resets the output impedance calibration to a default accuracy of ±30% across process, voltage, and temperature. This command is used to ensure output impedance accuracy to ±30% when ZQCS and ZQCL commands are not used. One ZQCS command can effectively correct at least 1.5% (ZQ correction) of output impedance errors within tZQCS for all speed bins, assuming the maximum sensitivities specified in Table 68 and Table 69 are met.The appropriate interval between ZQCS commands can be determined using these tables and system-specific parameters. Mobile LPDDR2 devices are subject to temperature drift rate (Tdriftrate) and voltage drift rate (Vdriftrate) in various applications. To accommodate drift rates and calculate the necessary interval between ZQCS commands, apply the following formula: ZQcorrection (Tsens× Tdriftrate) + (Vsens×Vdriftrate) Where Tsens = MAX (dRONdT) andVsens = MAX (dRONdV) define temperature and voltage sensitivities. For example, ifTsens = 0.75%/˚C,Vsens= 0.20%/mV,Tdriftrate = 1˚C/sec, and Vdriftrate = 15 mV/sec, then the interval between ZQCS commands is calculated as: 1.5 = 0.4s (0.75 × 1) + (0.20 × 15) A ZQ calibration command can only be issued when the device is in the idle state with all banks precharged. No other activities can be performed on the data bus during calibration periods (tZQINIT, tZQCL, or tZQCS). The quiet time on the data bus helps to accurately calibrate output impedance. There is no required quiet time after the ZQRESET command. If multiple devices share a single ZQ resistor, only one device can be calibrating at any given time. After calibration is complete, the ZQ ball circuitry is disabled to reduce power consumption. In systems sharing a ZQ resistor between devices, the controller must prevent tZQINIT, tZQCS, and tZQCL overlap between the devices. ZQRESET overlap is acceptable. If the ZQ resistor is absent from the system, ZQ must be connected to VDDCA. In this situation, the device must ignore ZQ calibration commands and the device will use the default calibration settings. Confidential - 52 of 125 - Rev.1.0 Jan. 2018 AS4C32M32MD2A-25BIN AS4C64M16MD2A-25BIN Figure 42: ZQ Timings Notes : 1. Only the NOP command is supported during ZQ calibrations. 2. CKE must be registered HIGH continuously during the calibration period. 3. All devices connected to the DQ bus should be High-Z during the calibration process. ZQ External Resistor Value, Tolerance, and Capacitive Loading To use the ZQ calibration function, a 240 ohm (±1% tolerance) external resistor must be connected between the ZQ pin And ground. A single resistor can be used for each device or one resistor can be shared between multiple devices if the ZQ calibration timings for each device do not overlap.The total capacitive loading on the ZQ pin must be limited (see the Input/Output Capacitance table). Confidential - 53 of 125 - Rev.1.0 Jan. 2018 AS4C32M32MD2A-25BIN AS4C64M16MD2A-25BIN Power-Down Power-down is entered synchronously when CKE is registered LOW and CS# is HIGH at the rising edge of clock. A NOP command must be driven in the clock cycle following power-down entry. CKE must not go LOW while MRR, MRW, READ, or WRITE operations are in progress. CKE can go LOW while any other operations such as ACTIVATE, PRECHARGE, auto precharge, or REFRESH are in progress, but the power-down IDD specification will not be applied until such operations are complete. If power-down occurs when all banks are idle, this mode is referred to as idle power-down; if power-down occurs when there is a row active in any bank, this mode is referred to as active power-down. Entering power-down deactivates the input and output buffers, excluding CK, CK#, and CKE. In power-down mode, CKE must be held LOW; all other input signals are “Don’t Care.” CKE LOW must be maintained until tCKE is satisfied.VREFCA must be Maintained at a valid level during power-down. VDDQ can be turned off during power-down. IfVDDQ is turned off,VREFDQ must also be turned off. Prior to exiting power-down, bothVDDQ andVREFDQ must be within their respective minimum/maximum operating ranges (see AC and DC Operating Conditions). No refresh operations are performed in power-down mode.The maximum duration in power-down mode is only limited by the refresh requirements outlined in REFRESH Command. The power-down state is exited when CKE is registered HIGH. The controller must drive CS# HIGH in conjunction with CKE HIGH when exiting the power-down state. CKE HIGH must be maintained until tCKE is satisfied. A valid, executable command can be applied with power-down exit latency tXP after CKE goes HIGH. Powerdown exit latency is defined in the ACTiming section. Confidential - 54 of 125 - Rev.1.0 Jan. 2018 AS4C32M32MD2A-25BIN AS4C64M16MD2A-25BIN Figure 43: Power-Down Entry and Exit Timing Note : 1. Input clock frequency can be changed or the input clock stopped during power-down, provided that the clock frequency is between the minimum and maximum specified frequencies for the speed grade in use, and that prior to power-down exit, a minimum of two stable clocks complete. Figure 44: CKE Intensive Environment Figure 45: REFRESH-to-REFRESH Timing in CKE Intensive Environments Note : 1. The pattern shown can repeat over an extended period of time. With this pattern, all AC and DC timing and voltage specifications with temperature and voltage drift are ensured. Confidential - 55 of 125 - Rev.1.0 Jan. 2018 AS4C32M32MD2A-25BIN AS4C64M16MD2A-25BIN Figure 46: READ to Power-Down Entry Notes : 1. CKE must be held HIGH until the end of the burst operation. 2. CKE can be registered LOW at (RL + RU(tDQSCK(MAX)/tCK) + BL/2 + 1) clock cycles after the clock on which the READ command is registered. Confidential - 56 of 125 - Rev.1.0 Jan. 2018 AS4C32M32MD2A-25BIN AS4C64M16MD2A-25BIN Figure 47: READ with Auto Precharge to Power-Down Entry Notes : 1. CKE must be held HIGH until the end of the burst operation. 2. CKE can be registered LOW at (RL + RU(tDQSCK/tCK)+ BL/2 + 1) clock cycles after the clock on which the READ command is registered. 3. BL/2 with tRTP = 7.5ns and tRAS (MIN) is satisfied. 4. Start internal PRECHARGE. Confidential - 57 of 125 - Rev.1.0 Jan. 2018 AS4C32M32MD2A-25BIN AS4C64M16MD2A-25BIN Figure 48: WRITE to Power-Down Entry Note : 1. CKE can be registered LOW at (WL + 1 + BL/2 + RU(tWR/tCK)) clock cycles after the clock on which the WRITE command is registered. Confidential - 58 of 125 - Rev.1.0 Jan. 2018 AS4C32M32MD2A-25BIN AS4C64M16MD2A-25BIN Figure 49: WRITE with Auto Precharge to Power-Down Entry Notes : 1. CKE can be registered LOW at (WL + 1 + BL/2 + RU(tWR/tCK + 1) clock cycles after the WRITE command is registered. 2. Start internal PRECHARGE. Confidential - 59 of 125 - Rev.1.0 Jan. 2018 AS4C32M32MD2A-25BIN AS4C64M16MD2A-25BIN Figure 50: REFRESH Command to Power-Down Entry Note : 1. CKE can go LOW tIHCKE after the clock on which the REFRESH command is registered. Figure 51: ACTIVATE Command to Power-Down Entry Note : 1. CKE can go LOW at tIHCKE after the clock on which the ACTIVATE command is registered. Figure 52: PRECHARGE Command to Power-Down Entry Note : 1. CKE can go LOW tIHCKE after the clock on which the PRECHARGE command is registered. Confidential - 60 of 125 - Rev.1.0 Jan. 2018 AS4C32M32MD2A-25BIN AS4C64M16MD2A-25BIN Figure 53: MRR Command to Power-Down Entry Note : 1. CKE can be registered LOW at (RL + RU(tDQSCK/tCK)+ BL/2 + 1) clock cycles after the clock on which the MRR command is registered. Figure 54: MRW Command to Power-Down Entry Note : 1. CKE can be registered LOW tMRW after the clock on which the MRW command is registered. Deep Power-Down Deep power-down (DPD) is entered when CKE is registered LOW with CS# LOW, CA0 HIGH, CA1 HIGH, and CA2 LOW at the rising edge of the clock.The NOP command must be driven in the clock cycle following power-down entry. CKE must not go LOW while MRR or MRW operations are in progress. CKE can go LOW while other operations such as ACTIVATE, auto precharge, PRECHARGE, or REFRESH are in progress, however, deep power-down IDD specifications will not be applied until those operations complete. The contents of the array will be lost upon entering DPD mode. In DPD mode, all input buffers except CKE, all output buffers, and the power supply to internal circuitry are disabled within the device.VREFDQ can be at any level between 0 and VDDQ, andVREFCA can be at any level between 0 andVDDCA during DPD. All power supplies (including VREF) must be within the specified limits prior to exiting DPD (see AC and DC Operating Conditions). To exit DPD, CKE must be HIGH, tISCKE must be complete, and the clock must be stable. To resume operation, the device must be fully reinitialized using the power-up initialization sequence. Confidential - 61 of 125 - Rev.1.0 Jan. 2018 AS4C32M32MD2A-25BIN AS4C64M16MD2A-25BIN Figure 55: Deep Power-Down Entry and Exit Timing Notes : 1. The initialization sequence can start at any time after Tx + 1. 2. tINIT3 and Tx + 1 refer to timings in the initialization sequence. For details, see Mode Register Definition. Input Clock Frequency Changes and Stop Events Input Clock Frequency Changes and Clock Stop with CKE LOW During CKE LOW, Mobile LPDDR2 devices support input clock frequency changes and clock stop under the following conditions: • Refresh requirements are met • Only REFab or REFpb commands can be in process • Any ACTIVATE or PRECHARGE commands have completed prior to changing the frequency • Related timing conditions,tRCD and tRP, have been met prior to changing the frequency • The initial clock frequency must be maintained for a minimum of two clock cycles after CKE goes LOW • The clock satisfies tCH(abs) and tCL(abs) for a minimum of two clock cycles prior to CKE going HIGH For input clock frequency changes, tCK(MIN) and tCK(MAX) must be met for each clock cycle. After the input clock frequency is changed and CKE is held HIGH, additional MRW commands may be required to set theWR, RL, etc. These settings may require adjustment to meet minimum timing requirements at the target clock frequency. For clock stop, CK is held LOW and CK# is held HIGH. Confidential - 62 of 125 - Rev.1.0 Jan. 2018 AS4C32M32MD2A-25BIN AS4C64M16MD2A-25BIN Input Clock Frequency Changes and Clock Stop with CKE HIGH During CKE HIGH, LPDDR2 devices support input clock frequency changes and clock stop under the following conditions: • REFRESH requirements are met. • Any ACTIVATE, READ, WRITE, PRECHARGE, MRW, or MRR commands must have completed, including any associated data bursts, prior to changing the frequency. • Related timing conditions, tRCD, tWR, tWRA, tRP, tMRW, and tMRR, etc., are met • CS# must be held HIGH • Only REFab or REFpb commands can be in process The device is ready for normal operation after the clock satisfies tCH(abs) and tCL(abs) for a minimum of 2 × tCK + tXP. For input clock frequency changes, tCK(MIN) and tCK(MAX) must be met for each clock cycle. After the input clock frequency is changed, additional MRW commands may be required to set the WR, RL, etc. These settings may require adjustment to meet minimum timing requirements at the target clock frequency. For clock stop, CK is held LOW and CK# is held HIGH. NO OPERATION Command The NO OPERATION (NOP) command prevents the device from registering any unwanted commands issued between operations. A NOP command can only be issued at clock cycle N when the CKE level is constant for clock cycle N-1 and clock cycle N. The NOP command has tw possible encodings: CS# HIGH at the clock rising edge N; and CS# LOW with CA0, CA1, CA2 HIGH at the clock rising edge N. The NOP command will not terminate a previous operation that is still in process, such as a READ burst or WRITE burst cycle. Simplified Bus Interface State Diagram The state diagram provides a simplified illustration of the bus interface, supported state transitions, and the commands that control them. For a complete description of device behavior, use the information provided in the state diagram with the truth tables and timing specifications. The truth tables describe device behavior and applicable restrictions when considering the actual state of all banks. Truth Tables Truth tables provide complementary information to the state diagram.They also clarify device behavior and applicable restrictions when considering the actual state of the banks. Unspecified operations and timings are illegal.To ensure proper operation after an illegal event, the device must be powered down and then restarted using the specified initialization sequence before normal operation can continue. Confidential - 63 of 125 - Rev.1.0 Jan. 2018 AS4C32M32MD2A-25BIN AS4C64M16MD2A-25BIN Table30 : Command Truth table Notes 1–11 apply to all parameters conditions Command Pins Command CKE CK(n-1) CK(n) CA Pins /CS CA0 CA1 CA2 CA3 CA4 CA5 CA6 CA7 CA8 CA9 H H L L L L L MA0 MA1 MA2 MA3 MA4 MA5 H H X MA6 MA7 OP0 OP1 OP2 OP3 OP4 OP5 OP6 OP7 H H L L L L H MA0 MA1 MA2 MA3 MA4 MA5 H H X MA6 MA7 REFRESH (per bank) H H L L L H L H H X REFRESH (all banks) H H L L L H H H H X Enter self refresh H L L L L H X L X ACTIVATE (bank) H H L L H R8 BA0 BA1 BA2 H H X R0 R1 R2 H H L H L L H H X AP C3 C4 H H L H L H H X AP C3 H H L H H L H H X H H L H H X H L L X L X MRW MRR WRITE(bank) READ bank) PRECHARGE (bank) BST Enter DPD NOP Maintain PD, SREF, DPD, (NOP) NOP Maintain PD, SREF, DPD, (NOP) Enter power-down Exit PD, SREF, DPD CK Edge X X X X X X X R9 R10 R11 R12 R3 R4 R5 R6 R7 R13 R14 RFU RFU C1 C2 BA0 BA1 BA2 C5 C6 C7 C8 C9 C10 C11 H RFU RFU C1 C2 BA0 BA1 BA2 C4 C5 C6 C7 C8 C9 C10 C11 H AB X X BA0 BA1 BA2 X H H L L X X H H L X X H H L H H X H H H X L L L L L X X H H H X H H X X L L H X L L X X H L H X X H H H X X L X X L H H X X H X X Notes : 1. All commands are defined by the current state of CS#, CA0, CA1, CA2, CA3, and CKE at the rising edge of the clock. 2. Bank addresses (BA) determine which bank will be operated upon. 3. AP HIGH during a READ or WRITE command indicates that an auto precharge will occur To the bank associated with the READ or WRITE command. Confidential - 64 of 125 - Rev.1.0 Jan. 2018 AS4C32M32MD2A-25BIN AS4C64M16MD2A-25BIN 4. X indicates a “Don’t Care” state, with a defined logic level, either HIGH (H) or LOW (L). 5. Self refresh exit and DPD exit are asynchronous. 6. VREF must be between 0 and VDDQ during self refresh and DPD operation. 7. CAxr refers to command/address bit “x” on the rising edge of clock. 8. CAxf refers to command/address bit “x” on the falling edge of clock. 9. CS# and CKE are sampled on the rising edge of the clock. 10. Per-bank refresh is only supported in devices with eight banks. 11. he least-significant column address C0 is not transmitted on the CA bus, and is inferred to be zero. Table31 : CKE Truth Table Notes 1–5 apply to all parameters and conditions ; L=LOW , H=HIGH , X=“Don’t Care” Current State Active power-down Idle power-down CKEn-1 CKEn CS# Command n Operation n Next State L L X X L H H NOP L L X X L H H NOP L L X X L H H NOP Exit resetting power-down Idle or resetting L L X X Maintain deep power-down Deep power-down L H H NOP Active power-down Maintain active power-down Exit active power-down Active 6, ,7 Idle power-down Maintain idle power-down Exit idle power-down Idle 6, 7 Resetting power-down Maintain resetting power-down Resetting idle power-down Deep power-down Exit deep power-down 6, 7, 8 Power-on L L X X L H H NOP Exit self refresh H L H NOP Enter active power-down Active power-down H L H NOP Enter idle power-down Idle power-down H L L Enter self refresh Enter self refresh Self refresh H L L DPD Enter deep power-down Deep power-down Resetting H L H NOP Other states H H Self refresh Bank(s) active All banks idle Notes Maintain self refresh 9 Self refresh Idle Enter deep power-down 10, 11 Resetting power-down Refer to the command truth table Notes : 1. Current state = the state of the device immediately prior to the clock rising edge n. 2. All states and sequences not shown are illegal or reserved unless explicitly described elsewhere in this document. 3. CKEn = the logic state of CKE at clock rising edge n; CKEn-1 was the state of CKE at the previous clock edge. 4. CS#= the logic state of CS# at the clock rising edge n. 5. Command n = the command registered at clock edge n, and operation n is a result of command n. 6. Power-down exit time (tXP) must elapse before any command other than NOP is issued. Confidential - 65 of 125 - Rev.1.0 Jan. 2018 AS4C32M32MD2A-25BIN AS4C64M16MD2A-25BIN 7. The clock must toggle at least twice prior to the tXP period. 8. Upon exiting the resetting power-down state, the device will return to the idle state if tINIT5 has expired. 9. The DPD exit procedure must be followed as described in Deep Power-Down (page 60). 10. Self refresh exit time (tXSR) must elapse before any command other than NOP is issued. 11. The clock must toggle at least twice prior to the tXSR time. Table32 : Current State Bank n to Command to Bank n Truth Table Notes 1–5 apply to all parameters and conditions Current State Command Any NOP ACTIVATE Operation Next State Continue previous operation Notes Current state Select and activate row Active Refresh (per bank) Begin to refresh Refreshing (per bank) 6 Refresh (all banks) Begin to refresh Refreshing (all banks) 7 MR writing 7 Idle MRW Load value to mode register MRR Read value from mode register Idle, MR reading RESET Begin device auto initialization Resetting 7, 8 9, 10 PRECHARGE Deactivate row(s) in bank or banks Precharging READ Select column and start read burst Reading WRITE Row active MRR PRECHARGE Reading Writing Active MR reading Precharging 9 READ Select column and start new read burst Reading 11, 12 WRITE Select column and start write burst Writing 11, 12, 13 BST WRITE Writing Select column and start write burst Read value from mode register READ BST Deactivate row(s) in bank or banks Read burst terminate Active 14 Select column and start new write burst Writing 11, 12 Select column and start read burst Reading 11, 12, 15 Active 14 7, 9 Write burst terminate Power-on MRW RESET Begin device auto initialization Resetting Resetting MRR Read value from mode register Resetting MR reading Notes : 1. Values in this table apply when both CKEn -1 and CKEn are HIGH, and after tXSR or tXP has been met, if the previous state was power-down. 2. All states and sequences not shown are illegal or reserved. 3. Current state definitions: Idle: The bank or banks have been precharged, and tRP has been met. Active : A row in the bank has been activated, and tRCD has been met. No data bursts or accesses and no register accesses are in progress. Reading: A READ burst has been initiated with auto precharge disabled and has not yet terminated or been terminated. Writing: A WRITE burst has been initiated with auto precharge disabled and has not yet terminated or been terminated. 4. The states listed below must not be interrupted by a command issued to the same bank. NOP commands or supported commands to the other bank must be issued on any clock edge occurring during these states. Supported commands to the other banks are determined by that bank’s current state, and the definitions given in Table 33 . Confidential - 66 of 125 - Rev.1.0 Jan. 2018 AS4C32M32MD2A-25BIN AS4C64M16MD2A-25BIN Precharge: Starts with registration of a PRECHARGE command and ends when tRP is met. After tRP is met, the bank is in the idle state. Row activate: Starts with registration of an ACTIVATE command and ends when tRCD is met. After tRCD is met, the bank is in the active state. READ with AP enabled: Starts with registration of a READ command with auto precharge enabled and ends when tRP is met. After tRP is met, the bank is in the idle state. WRITE with AP enabled: Starts with registration of a WRITE command with auto precharge enabled and ends when tRP is met. After tRP is met, the bank is in the idle state. 5. The states listed below must not be interrupted by any executable command. NOP commands must be applied to each rising clock edge during these states. Refresh (per bank): Starts with registration of a REFRESH (per bank) command and ends when tRFCpb is met. After tRFCpb is met, the bank is in the idle state. Refresh (all banks): Starts with registration of a REFRESH (all banks) command and ends when tRFCab is met. After tRFCab is met, the device is in the all banks idle state. Idle MR reading: Starts with registration of the MRR command and ends when tMRR is met. After tMRR is met, the device is in the all banks idle state. Resetting MR reading: Starts with registration of the MRR command and ends when tMRR is met. After tMRR is met, the device is in the all banks idle state. Active MR reading: Starts with registration of the MRR command and ends when tMRR is met. After tMRR is met, the bank is in the active state. MR writing: Starts with registration of the MRW command and ends when tMRW is met. After tMRW is met, the device is in the all banks idle state. Precharging all: Starts with registration of a PRECHARGE ALL command and ends when tRP is met. After tRP is met, the device is in the all banks idle state. 6. Bank-specific; requires that the bank is idle and no bursts are in progress. 7. Not bank-specific; requires that all banks are idle and no bursts are in progress. 8. Not bank-specific. 9. This command may or may not be bank specific. If all banks are being precharged, they must be in a valid state for precharging. 10. If a PRECHARGE command is issued to a bank in the idle state, tRP still applies. 11. A command other than NOP should not be issued to the same bank while a burst READ or burst WRITE with auto precharge is enabled. 12. The new READ or WRITE command could be auto precharge enabled or auto precharge disabled. 13. A WRITE command can be issued after the completion of the READ burst; otherwise, a BST must be issued to end the READ prior to asserting a WRITE command. 14. Not bank-specific. The BST command affects the most recent READ/WRITE burst started by the most recent READ / WRITE command, regardless of bank. 15. A READ command can be issued after completion of the WRITE burst; otherwise, a BST must be used to end the WRITE prior to asserting another READ command. Confidential - 67 of 125 - Rev.1.0 Jan. 2018 AS4C32M32MD2A-25BIN AS4C64M16MD2A-25BIN Table 33: Current State Bank n to Command to Bank m Truth Table Notes 1–6 apply to all parameters and conditions Current State of Bank n Any Idle Row activating, active, or precharging Reading (auto precharge disabled) Writing (auto precharge disabled) Reading with auto precharge Writing with auto precharge Command to Bank m Operation Next State for Bank m NOP Continue previous operation Current State of Bank m notes Any Any command supported to Bank m - 7 ACTIVATE Select and activate row in bank m Active 8 READ Select column and start READ Burst from bank m Reading 9 WRITE Select column and start WRITE burst to bank m Writing 9 PRECHARGE Deactivate row(s) in bank or banks 10 MRR READ value from mode register Precharging Idle MR reading or Active MR reading BST READ or WRITE burst terminates an ongoing READ/WRITE from/to bank m Active 7 READ Select column and start READ burst from bank m Reading 9 WRITE Select column and start WRITE burst to bank m Writing 9,14 11,12,13 ACTIVATE Select and activate row in bank m Active PRECHARGE Deactivate row(s) in bank or banks Precharging 10 READ Select column and start READ burst from bank m Reading 9,15 WRITE Select column and start WRITE burst to bank m Writing 9 ACTIVATE Select and activate row in bank m Active PRECHARGE Deactivate row(s) in bank or banks Precharging 10 READ Select column and start READ burst from bank m Reading 9,16 WRITE Select column and start WRITE burst to bank m Writing 9,14,16 ACTIVATE Select and activate row in bank m Active PRECHARGE Deactivate row(s) in bank or banks Precharging 10 READ Select column and start READ burst from bank m Reading 9,15,16 WRITE Select column and start WRITE burst to bank m Writing 9,16 ACTIVATE Select and activate row in bank m Active PRECHARGE Deactivate row(s) in bank or banks Precharging 10 Power-on MRW RESET Begin device auto initialization Resetting 17,18 Resetting MRR Read value from mode register Resetting MR reading Notes : 1. This table applies when: the previous state was self refresh or power-down ; after tXSR or tXP has been met; and both CKEn -1 and CKEn are HIGH. 2. All states and sequences not shown are illegal or reserved. Confidential - 68 of 125 - Rev.1.0 Jan. 2018 AS4C32M32MD2A-25BIN AS4C64M16MD2A-25BIN 3. Current state definitions: Idle: The bank has been precharged and tRP has been met. Active: A row in the bank has been activated, tRCD has been met, no data bursts or accesses and no register accesses are in progress. Read: A READ burst has been initiated with auto precharge disabled and the READ has not yet terminated or been terminated. Write: A WRITE burst has been initiated with auto precharge disabled and the WRITE has not yet terminated or been terminated. 4. Refresh, self refresh, and MRW commands can only be issued when all banks are idle. 5. A BST command cannot be issued to another bank; it applies only to the bank represented by the current state. 6. The states listed below must not be interrupted by any executable command. NOP commands must be applied during each clock cycle while in these states: Idle MRR: Starts with registration of the MRR command and ends when tMRR has been met. After tMRR is met, the device is in the all banks idle state. Reset MRR: Starts with registration of the MRR command and ends when tMRR has been met. After tMRR is met, the device is in the all banks idle state. Active MRR: Starts with registration of the MRR command and ends when tMRR has been met. After tMRR is met, the bank is in the active state. MRW: Starts with registration of the MRW command and ends when tMRW has been met. After tMRW is met, the device is in the all banks idle state. 7. BST is supported only if a READ or WRITE burst is ongoing. 8. tRRD must be met between the ACTIVATE command to bank n and any subsequent ACTIVATE command to bank m. 9. READs or WRITEs listed in the command column include READs and WRITEs with or without auto precharge enabled. 10. This command may or may not be bank-specific. If all banks are being precharged, they must be in a valid state for precharging. 11. MRR is supported in the row-activating state. 12. MRR is supported in the precharging state. 13. The next state for bank m depends on the current state of bank m (idle, row-activating, precharging, or active). 14. A WRITE command can be issued after the completion of the READ burst; otherwise a BST must be issued to end the READ prior to asserting a WRITE command. 15. A READ command can be issued after the completion of the WRITE burst; otherwise, a BST must be issued to end the WRITE prior to asserting another READ command. 16. A READ with auto precharge enabled or a WRITE with auto precharge enabled can be followed by any valid command to other banks provided that the timing restrictions in the PRECHARGE and Auto Precharge Clarification table are met. 17. Not bank-specific; requires that all banks are idle and no bursts are in progress. 18. RESET command is achieved through MODE REGISTER WRITE command. Table 34: DM Truth Table Functional Name Write enable DM DQ notes L Valid 1 Write inhibit H X 1 Note : 1. Used to mask write data, and is provided simultaneously with the corresponding input data. Confidential - 69 of 125 - Rev.1.0 Jan. 2018 AS4C32M32MD2A-25BIN AS4C64M16MD2A-25BIN Electrical Specifications Absolute Maximum Ratings Stresses greater than those listed below may cause permanent damage to the device. This is a stress rating only, and functional operation of the device at these or any other conditions outside those indicated in the operational sections of this document is not implied. Exposure to absolute maximum rating conditions for extended periods may adversely affect reliability. Table 35: Absolute Maximum DC Ratings Symbol Min Max Unit Notes VDD1 supply voltage relative to VSS VDD1 –0.4 +2.3 V 1 VDD2 supply voltage relative to VSS VDD2 (1.2V) –0.4 +1.6 V 1 Parameter VDDCA supply voltage relative to VSSCA VDDQ supply voltage relative to VSSQ Voltage on any ball relative to VSS VDDCA –0.4 +1.6 V 1,2 VDDQ –0.4 +1.6 V 1,3 VIN, VOUT –0.4 +1.6 V TSTG -55 +125 ˚C Storage temperature 4 Notes : 1. See 1. Voltage Ramp under Power-Up (page 7). 2. VREFCA 0.6 ≤ VDDCA; however, VREFCA may be ≥ VDDCA provided that VREFCA ≤ 300mV. 3. VREFDQ 0.6 ≤ VDDQ; however, VREFDQ may be ≥ VDDQ provided that VREFDQ ≤ 300mV. 4. Storage temperature is the case surface temperature on the center/top side of the device. For measurement conditions, refer to the JESD51-2 standard. Input/Output Capacitance Table 36: Input/Output Capacitance Note 1 applies to all parameters and conditions Parameter Symbol LPDDR2 800-466 LPDDR2 400-200 Unit Notes pF 1 Min Max Min Max 1.0 2.0 1.0 2.0 CDCK 0 0.2 0 0.25 pF 1 CI 1.0 2.0 1.0 2.0 pF 1,2 Input capacitance delta, all other input Only pins CDI -0.40 +0.40 -0.50 +0.50 pF 1,3 Input/output capacitance, DQ,DM,DQS, DQS# CIO 1.25 2.5 1.25 2.5 pF CDDQS 0 0.25 0 0.30 pF Input/output capacitance delta, DQ,DM CDIO -0.5 +0.5 -0.6 +0.6 pF Input/output capacitance ZQ CZQ 0 2.5 0 2.5 pF Input capacitance, CK and CK# Input capacitance delta, CK and CK# Input capacitance, all other input Only pins Input/output capacitance delta, DQS, DQS# CCK 4 Notes : 1. TC –40˚C to +105˚C; VDDQ = 1.14–1.3V; VDDCA = 1.14–1.3V; VDD1 = 1.7–1.95V; VDD2 = 1.14–1.3V. 2. This parameter applies to die devices only (does not include package capacitance). 3. This parameter is not subject to production testing. It is verified by design and characterization. The capacitance is measured according to JEP147 (procedure for measuring input capacitance using a vector network analyzer), with VDD1, VDD2, VDDQ, VSS, VSSCA, and VSSQ applied; all other pins are left floating. 4. Absolute value of CCK - CCK#. 5. CI applies to CS#, CKE, and CA[9:0]. Confidential - 70 of 125 - Rev.1.0 Jan. 2018 AS4C32M32MD2A-25BIN AS4C64M16MD2A-25BIN 6. CDI = CI - 0.5 × (CCK + CCK#). 7. DM loading matches DQ and DQS. 8. MR3 I/O configuration drive strength OP[3:0] = 0001b (34.3 ohm typical). 9. Absolute value of CDQS and CDQS#. 10. CDIO = CIO - 0.5 × (CDQS + CDQS#) in byte-lane. 11. Maximum external load capacitance on ZQ pin: 5pF. Electrical Specifications – IDD Specifications and Conditions The following definitions and conditions are used in the IDD measurement tables unless stated otherwise: • LOW:VIN ≤VIL(DC)max • HIGH:VIN ≥VIH(DC)min • STABLE: Inputs are stable at a HIGH or LOW level • SWITCHING: See the following three tables Table 37: Switching for CA Input Signals Notes 1–3 apply to all parameters and conditions Parameter CK Rising/ CK Rising/ CK Rising/ CK Rising/ CK Rising/ CK Rising/ CK# Falling CK# Falling CK# Falling CK# Falling CK# Falling CK# Falling Cycle N CS# N+1 HIGH CA0 CK Rising/ CK Rising/ CK# Falling CK# Falling N+2 HIGH N+3 HIGH H L L L L CA1 H H H L L CA2 H L L L L CA3 H H H L L CA4 H L L L L HIGH H H H L L H H H H L L H H H H CA5 H H H L L L L H CA6 H L L L L H H H CA7 H H H L L L L H CA8 H L L L L H H H CA9 H H H L L L L H Notes : 1. CS# must always be driven HIGH. 2. For each clock cycle, 50% of the CA bus is changing between HIGH and LOW. 3. The noted pattern (N, N + 1, N + 2, N + 3...) is used continuously during IDD measurement for IDD values that require switching on the CA bus. Confidential - 71 of 125 - Rev.1.0 Jan. 2018 AS4C32M32MD2A-25BIN AS4C64M16MD2A-25BIN Table 38: Switching for IDD4R Clock CKE CS# Clock Cycle Number Command CA[2:0] CA[9:3] All DQ Rising H L N Read_Rising HLH LHLHLHL L Falling H L N Read_Falling LLL LLLLLLL L Rising H H N+1 NOP LLL LLLLLLL H Falling H H N+1 NOP HLH LHLLHLH L Rising H L N+2 Read_Rising HLH LHLLHLH H Falling H L N+2 Read_Falling LLL HHHHHHH H Rising H H N+3 NOP LLL HHHHHHH H Falling H H N+3 NOP HLH LHLHLHL L Notes : 1. Data strobe (DQS) is changing between HIGH and LOW with every clock cycle. 2. The noted pattern (N, N + 1...) is used continuously during IDD measurement for IDD4R Table 39: Switching for IDD4W Clock CKE CS# Clock Cycle Number Command CA[2:0] CA[9:3] All DQ Rising H L N Write Rising LLH LHLHLHL L Falling H L N Write Falling LLL LLLLLLL L Rising H H N+1 NOP LLL LLLLLLL H Falling H H N+1 NOP LLH LHLLHLH L Rising H L N+2 Write Rising LLH LHLLHLH H Falling H L N+2 Write Falling LLL HHHHHHH H Rising H H N+3 NOP LLL HHHHHHH H Falling H H N+3 NOP LLH LHLHLHL L Notes : 1. Data strobe (DQS) is changing between HIGH and LOW with every clock cycle. 2. Data masking (DM) must always be driven LOW. 3. The noted pattern (N, N + 1...) is used continuously during IDD measurement for IDD4W . Confidential - 72 of 125 - Rev.1.0 Jan. 2018 AS4C32M32MD2A-25BIN AS4C64M16MD2A-25BIN Table 40: IDD Specification and Conditions(X16) Parameter / Condition Operating one bank active-precharge current (SDRAM) : tCK = tCKmin; tRC = tRCmin; CKE is HIGH; CS# is HIGH between valid commands; CA bus inputs are switching; Data bus inputs are stable Idle power-down standby current: tCK = tCKmin; CKE is LOW; CS# is HIGH; All banks are idle; CA bus inputs are switching; Data bus inputs are stable Idle power-down standby current with clock stop: CK = LOW, CK# = HIGH; CKE is LOW; CS# is HIGH; All banks are idle; CA bus inputs are stable; Data bus inputs are stable Idle non-power-down standby current: tCK = tCKmin; CKE is HIGH; CS# is HIGH; All banks are idle; CA bus inputs are switching; Data bus inputs are stable Idle non-power-down standby current with clock stopped: CK = LOW; CK# = HIGH; CKE is HIGH; CS# is HIGH; All banks are idle; CA bus inputs are stable; Data bus inputs are stable Active power-down standby current: tCK = tCKmin; CKE is LOW; CS# is HIGH; One bank is active; CA bus inputs are switching; Data bus inputs are stable Power Supply IDD01 VDD1 15 IDD02 VDD2 50 IDD0in VDDCA,VDDQ 6 IDD2P1 VDD1 400 Active non-power-down standby current with clock stopped : CK = LOW, CK# = HIGH CKE is HIGH; CS# is HIGH; One bank is active; CA bus inputs are stable; Data bus inputs are stable Confidential -25 IDD2P2 VDD2 500 IDD2P,in VDDCA,VDDQ 40 IDD2PS1 VDD1 400 IDD2PS2 VDD2 500 IDD2PS,in VDDCA,VDDQ IDD2N1 VDD1 0.6 VDD2 30 IDD2N,in VDDCA,VDDQ 6 IDD2NS1 VDD1 0.6 IDD2NS2 VDD2 12 IDD2NS,in VDDCA, VDDQ Unit Notes mA 4 μA 4 μA 4 40 IDD2N2 mA 4 mA 4 6 IDD3P1 VDD1 500 μA IDD3P2 VDD2 4 mA IDD3P,in VDDCA, VDDQ 40 μA IDD3PS1 VDD1 500 μA 4 mA 40 μA Active power-down standby current with clock stop: CK = LOW, CK# = HIGH; CKE is LOW; CS# is HIGH; One bank is active; CA IDD3PS2 VDD2 bus inputs are stable; Data bus inputs are stable IDD3PS,in VDDCA, VDDQ Active non-power-down standby current: tCK = tCKmin; CKE is HIGH; CS# is HIGH; One bank is active; CA bus inputs are switching; Data bus inputs are stable Data Rate Symbol IDD3N1 VDD1 2 IDD3N2 VDD2 35 IDD3N,in VDDCA, VDDQ 6 IDD3NS1 VDD1 2 IDD3NS2 VDD2 10 IDD3NS,in VDDCA, VDDQ - 73 of 125 - 4 4 mA 4 mA 4 6 Rev.1.0 Jan. 2018 AS4C32M32MD2A-25BIN AS4C64M16MD2A-25BIN Table 41: IDD Specification and Conditions(X16) (continued) Data Rate Parameter / Condition Symbol Power Supply Operating burst READ current: tCK = tCKmin; CS# is HIGH between valid commands; One bank is active; BL = 4; RL = RL (MIN); CA bus inputs are switching; 50% data change each burst transfer Operating burst WRITE current: tCK = tCKmin; CS# is HIGH between valid commands; One bank is active; BL = 4; WL = WLmin; CA bus inputs are switching; 50% data change each burst transfer IDD4R1 VDD1 5 IDD4R2 VDD2 150 IDD4R,in VDDCA 6 IDD4W1 VDD1 5 IDD4W2 VDD2 130 All-bank REFRESH burst current: tCK = tCKmin; CKE is HIGH between valid commands; tRC = tRFCabmin; Burst refresh; CA bus inputs are switching; Data bus inputs are stable All-bank REFRESH average current: tCK = tCKmin; CKE is HIGH between valid commands; tRC = tREFI; CA bus inputs are switching; Data bus inputs are stable IDD4W,in VDDCA, VDDQ VDD1 15 IDD52 VDD2 100 IDD5IN VDDCA, VDDQ 6 IDD5AB1 VDD1 2 IDD5AB2 VDD2 25 Self refresh current (–25˚C to +85˚C): CK = LOW, CK# = HIGH; CKE is LOW; CA bus inputs are stable; Data bus inputs are stable; Maximum 1x self refresh rate Deep power-down current: CK = LOW, CK# = HIGH; CKE is LOW; CA bus inputs are stable; Data bus inputs are stable mA mA 4 mA 4 mA 4 6 IDD5PB1 VDD1 2 IDD5PB2 VDD2 25 IDD5PB,in VDDCA, VDDQ Unit Notes 10 IDD51 IDD5AB,in VDDCA, VDDQ Per-bank REFRESH average current: tCK = tCKmin; CKE is HIGH between valid commands; tRC = tREFI/8; CA bus inputs are switching; Data bus inputs are stable -25 5 mA 5 6 4, 5 VDD1 500 6 IDD62 VDD2 1000 IDD6IN VDDCA, VDDQ 30 IDD61 IDD81 VDD1 10 IDD82 VDD2 30 IDD8IN VDDCA, VDDQ 30 μA 6 4,6 7 μA 7 4, 7 Notes : 1. IDD values are the maximum of the distribution of the arithmetic mean. 2. IDD current specifications are tested after the device is properly initialized. 3. The 1x self refresh rate is the rate at which the device is refreshed internally during self refresh, before going into the extended temperature range. 4. Measured currents are the sum of VDDQ and VDDCA. 5. Per-bank REFRESH is only applicable for LPDDR2-S4 device densities 1Gb or higher. 6. This is the general definition that applies to full-array self refresh. 7. IDD6ET and IDD8 are typical values, are sampled only, and are not tested. Confidential - 74 of 125 - Rev.1.0 Jan. 2018 AS4C32M32MD2A-25BIN AS4C64M16MD2A-25BIN Table 42: IDD Specification and Conditions(X32) Parameter / Condition Operating one bank active-precharge current (SDRAM) : tCK = tCKmin; tRC = tRCmin; CKE is HIGH; CS# is HIGH between valid commands; CA bus inputs are switching; Data bus inputs are stable Idle power-down standby current: tCK = tCKmin; CKE is LOW; CS# is HIGH; All banks are idle; CA bus inputs are switching; Data bus inputs are stable Idle power-down standby current with clock stop: CK = LOW, CK# = HIGH; CKE is LOW; CS# is HIGH; All banks are idle; CA bus inputs are stable; Data bus inputs are stable Idle non-power-down standby current: tCK = tCKmin; CKE is HIGH; CS# is HIGH; All banks are idle; CA bus inputs are switching; Data bus inputs are stable Idle non-power-down standby current with clock stopped: CK = LOW; CK# = HIGH; CKE is HIGH; CS# is HIGH; All banks are idle; CA bus inputs are stable; Data bus inputs are stable Active power-down standby current: tCK = tCKmin; CKE is LOW; CS# is HIGH; One bank is active; CA bus inputs are switching; Data bus inputs are stable Power Supply IDD01 VDD1 15 IDD02 VDD2 50 IDD0in VDDCA,VDDQ 6 IDD2P1 VDD1 400 Active non-power-down standby current with clock stopped : CK = LOW, CK# = HIGH CKE is HIGH; CS# is HIGH; One bank is active; CA bus inputs are stable; Data bus inputs are stable Confidential -25 IDD2P2 VDD2 500 IDD2P,in VDDCA,VDDQ 40 IDD2PS1 VDD1 400 IDD2PS2 VDD2 500 IDD2PS,in VDDCA,VDDQ IDD2N1 VDD1 0.6 VDD2 30 IDD2N,in VDDCA,VDDQ 6 IDD2NS1 VDD1 0.6 IDD2NS2 VDD2 12 IDD2NS,in VDDCA, VDDQ Unit Notes mA 4 μA 4 μA 4 40 IDD2N2 mA 4 mA 4 6 IDD3P1 VDD1 500 μA IDD3P2 VDD2 4 mA IDD3P,in VDDCA, VDDQ 40 μA IDD3PS1 VDD1 500 μA 4 mA 40 μA Active power-down standby current with clock stop: CK = LOW, CK# = HIGH; CKE is LOW; CS# is HIGH; One bank is active; CA IDD3PS2 VDD2 bus inputs are stable; Data bus inputs are stable IDD3PS,in VDDCA, VDDQ Active non-power-down standby current: tCK = tCKmin; CKE is HIGH; CS# is HIGH; One bank is active; CA bus inputs are switching; Data bus inputs are stable Data Rate Symbol IDD3N1 VDD1 2 IDD3N2 VDD2 35 IDD3N,in VDDCA, VDDQ 6 IDD3NS1 VDD1 2 IDD3NS2 VDD2 10 IDD3NS,in VDDCA, VDDQ - 75 of 125 - 4 4 mA 4 mA 4 6 Rev.1.0 Jan. 2018 AS4C32M32MD2A-25BIN AS4C64M16MD2A-25BIN Table 43: IDD Specification and Conditions(X32) (continued) Data Rate Parameter / Condition Symbol Power Supply Operating burst READ current: tCK = tCKmin; CS# is HIGH between valid commands; One bank is active; BL = 4; RL = RL (MIN); CA bus inputs are switching; 50% data change each burst transfer Operating burst WRITE current: tCK = tCKmin; CS# is HIGH between valid commands; One bank is active; BL = 4; WL = WLmin; CA bus inputs are switching; 50% data change each burst transfer IDD4R1 VDD1 5 IDD4R2 VDD2 150 IDD4R,in VDDCA 6 IDD4W1 VDD1 5 IDD4W2 VDD2 130 All-bank REFRESH burst current: tCK = tCKmin; CKE is HIGH between valid commands; tRC = tRFCabmin; Burst refresh; CA bus inputs are switching; Data bus inputs are stable All-bank REFRESH average current: tCK = tCKmin; CKE is HIGH between valid commands; tRC = tREFI; CA bus inputs are switching; Data bus inputs are stable IDD4W,in VDDCA, VDDQ VDD1 15 IDD52 VDD2 100 IDD5IN VDDCA, VDDQ 6 IDD5AB1 VDD1 2 IDD5AB2 VDD2 25 Self refresh current (–25˚C to +85˚C): CK = LOW, CK# = HIGH; CKE is LOW; CA bus inputs are stable; Data bus inputs are stable; Maximum 1x self refresh rate Deep power-down current: CK = LOW, CK# = HIGH; CKE is LOW; CA bus inputs are stable; Data bus inputs are stable mA mA 4 mA 4 mA 4 6 IDD5PB1 VDD1 2 IDD5PB2 VDD2 25 IDD5PB,in VDDCA, VDDQ Unit Notes 10 IDD51 IDD5AB,in VDDCA, VDDQ Per-bank REFRESH average current: tCK = tCKmin; CKE is HIGH between valid commands; tRC = tREFI/8; CA bus inputs are switching; Data bus inputs are stable -25 5 mA 5 6 4, 5 VDD1 500 6 IDD62 VDD2 1000 IDD6IN VDDCA, VDDQ 30 IDD61 IDD81 VDD1 10 IDD82 VDD2 30 IDD8IN VDDCA, VDDQ 30 μA 6 4,6 7 μA 7 4, 7 Notes : 1. IDD values are the maximum of the distribution of the arithmetic mean. 2. IDD current specifications are tested after the device is properly initialized. 3. The 1x self refresh rate is the rate at which the device is refreshed internally during self refresh, before going into the extended temperature range. 4. Measured currents are the sum of VDDQ and VDDCA. 5. Per-bank REFRESH is only applicable for LPDDR2-S4 device densities 1Gb or higher. 6. This is the general definition that applies to full-array self refresh. 7. IDD6ET and IDD8 are typical values, are sampled only, and are not tested. Confidential - 76 of 125 - Rev.1.0 Jan. 2018 AS4C32M32MD2A-25BIN AS4C64M16MD2A-25BIN Table 44: IDD6 Partial-Array Self Refresh Current VDD2, VDDQ, VDDCA = 1.14–1.30V; VDD1 = 1.70–1.95V PASR Full array 1/2 array 1/4 array 1/8 array Confidential Symbol Power Supply VDD1 1200 VDD2 2500 VDDi 100 VDD1 1000 VDD2 2000 VDDi 100 VDD1 900 VDD2 1700 VDDi 100 VDD1 900 VDD2 1500 VDDi 100 - 77 of 125 - Unit μA Rev.1.0 Jan. 2018 AS4C32M32MD2A-25BIN AS4C64M16MD2A-25BIN AC and DC Operating Conditions Operation or timing that is not specified is illegal.To ensure proper operation, the device must be initialized properly. Table 45: Recommended DC Operating Conditions LPDDR2-S4B Symbol Power Supply Unit 1.95 Core power 1 V 1.30 Core power2 V Min Typ Max VDD1 1.70 1.80 VDD2 1.14 1.20 VDDCA 1.14 1.20 1.30 Input buffer power V VDDQ 1.14 1.20 1.30 I/O buffer power V Note : 1. VDD1 uses significantly less power than VDD2. Table 46: Input Leakage Current Parameter/Condition Input leakage current : For CA, CKE, CS#, CK, CK#; Any input 0V ≤ VIN ≤ VDDCA; (All other pins not under test = 0V) VREF supply leakage current : VREFDQ=VDDQ/2, or VREFCA=VDDCA/2; (All other pins not under test = 0V) Symbol Min Max Unit Notes IL -2 2 uA 1 IVREF -1 1 uA 2 Note : 1. Although DM is for input only, the DM leakage must match the DQ and DQS/DQS# output leakage specification. 2. The minimum limit requirement is for testing purposes. The leakage current on VREFCA and VREFDQ pins should be minimal. Table 47: Operating Temperature Range Parameter/Condition Symbol Min Max Unit IT temperature range TCASE -40 +85 ˚C Note : 1. Operating temperature is the case surface temperature at the center of the top side of the device. For measurement conditions, refer to the JESD51-2 standard. 2. Some applications require operation in the maximum case temperature range, between 85˚C and 105˚C. For some LPDDR2 devices, derating may be necessary to operate in this range (see the MR4 Device Temperature (MA[7:0] = 04h) table). 3. Either the device operating temperature or the temperature sensor can be used to set an appropriate refresh rate, determine the need for AC timing derating, and/or monitor the operating temperature (see Temperature Sensor (page 47)). When using the temperature sensor, the actual device case temperature may be higher than the TCASE rating that applies for the operating temperature range. For example, TCASE could be above 85˚C when the temperature sensor indicates a temperature of less than 85˚C. Confidential - 78 of 125 - Rev.1.0 Jan. 2018 AS4C32M32MD2A-25BIN AS4C64M16MD2A-25BIN AC and DC Logic Input Measurement Levels for Single-Ended Signals Table 48: Single-Ended AC and DC Input Levels for CA and CS# Inputs Symbol Parameter VIHCA(AC) LPDDR2-800 to LPDDR2-466 LPDDR2-400 to LPDDR2-200 Unit notes Min Max Min Max AC input logic HIGH VREF+0.220 Note 2 VREF+0.300 Note 2 V 1,2 VREF-0.300 V 1,2 VDDCA V 1 VILCA(AC) AC input logic LOW DC input logic HIGH note 2 VREF+0.130 VREF-0.220 VIHCA(DC) VDDCA note 2 VREF+0.200 VILCA(DC) DC input logic LOW VSSCA VREF-0.130 VSSCA VREF-0.200 V 1 VREFCA(DC) Reference voltage for CA and CS# inputs 0.49 × VDDCA 0.51 × VDDCA 0.49 × VDDCA 0.51 × VDDCA V 3, 4 Note : 1. For CA and CS# input-only pins. VREF = VREFCA(DC). 2. See Figure 65. 3. The AC peak noise on VREFCA could prevent VREFCA from deviating more than ±1% VDDCA from VREFCA(DC) (for reference, approximately ±12mV). 4. For reference, approximately VDDCA/2 ±12mV. Table 49: Single-Ended AC and DC Input Levels for CKE Symbol VIHCKE Parameter Min Max Unit notes CKE input HIGH level 0.8 X VDDCA Note 1 V 1 VILCKE CKE input LOW level Note 1 0.2 X VDDCA V 1 Note : 1. See Figure 65. Table 50: Single-Ended AC and DC Input Levels for DQ and DM Symbol Parameter VIHDQ(AC) LPDDR2-800 to LPDDR2-466 LPDDR2-400 to LPDDR2-200 Unit notes Min Max Min Max AC input logic HIGH VREF+0.220 Note 2 VREF+0.300 Note 2 V 1,2 VILDQ(AC) AC input logic LOW VREF-0.220 V 1,2 DC input logic HIGH VDDQ Note 2 VREF+0.200 VREF-0.300 VIHDQ(DC) note 2 VREF+0.130 VDDQ V 1 VILDQ(DC) DC input logic LOW VSSQ VREF-0.130 VSSQ VREF-0.200 V 1 VREFDQ(DC) Reference voltage for DQ and DM inputs 0.49 X VDDQ 0.51X VDDQ 0.49 X VDDQ 0.51 X VDDQ V 3, 4 Note : 1. For DQ input-only pins. VREF = VREFDQ(DC). 2. See Figure 65. 3. The AC peak noise on VREFDQ could prevent VREFDQ from deviating more than ±1% VDDQ from VREFDQ(DC) (for reference, approximately ±12mV). 4. For reference, approximately. VDDQ/2 ±12mV. Confidential - 79 of 125 - Rev.1.0 Jan. 2018 AS4C32M32MD2A-25BIN AS4C64M16MD2A-25BIN VREF Tolerances The DC tolerance limits and AC noise limits for the reference voltages VREFCA and VREFDQ are illustrated below. This figure shows a valid reference voltageVREF(t) as a function of time.VDD is used in place ofVDDCA forVREFCA, and VDDQ for VREFDQ. VREF(DC) is the linear average ofVREF(t) over a very long period of time (for example, 1 second) and is specified as a fraction of the linear average ofVDDQ orVDDCA, also over a very long period of time (for example, 1 second).This average must meet the MIN/MAX requirements in Table 48. Additionally,VREF(t) can temporarily deviate from VREF(DC) by no more than ±1%VDD. VREF(t) cannot track noise onVDDQ orVDDCA if doing so would forceVREF outside these specifications. Figure 56: VREF DC Tolerance and VREF AC Noise Limits The voltage levels for setup and hold time measurementsVIH(AC),VIH(DC),VIL(AC), and VIL(DC) are dependent onVREF. VREF DC variations affect the absolute voltage a signal must reach to achieve a valid HIGH or LOW, as well as the time from which setup and hold times are measured. When VREF is outside the specified levels, devices will function correctly with appropriate timing deratings as long as: • VREF is maintained between 0.44 xVDDQ (orVDDCA) and 0.56 xVDDQ (orVDDCA), and • the controller achieves the required single-ended AC and DC input levels from instantaneous VREF (see Table). System timing and voltage budgets must account forVREF deviations outside this range. The setup/hold specification and derating values must include time and voltage associated withVREF AC noise. Timing and voltage effects due to AC noise onVREF up to the specified limit (±1%VDD) are included in LPDDR2 timings and their associated deratings. Confidential - 80 of 125 - Rev.1.0 Jan. 2018 AS4C32M32MD2A-25BIN AS4C64M16MD2A-25BIN Input Signal Figure 57: LPDDR2-466 to LPDDR2-800 Input Signal Notes : 1. Numbers reflect typical values. 2. For CA[9:0], CK, CK#, and CS# VDD stands for VDDCA. For DQ, DM, DQS, and DQS#, VDD stands for VDDQ. 3. For CA[9:0], CK, CK#, and CS# VSS stands for VSSCA. For DQ, DM, DQS, and DQS#, VSS stands for VSSQ. Confidential - 81 of 125 - Rev.1.0 Jan. 2018 AS4C32M32MD2A-25BIN AS4C64M16MD2A-25BIN Figure 58: LPDDR2-200 to LPDDR2-400 Input Signal Notes : 1. Numbers reflect typical values. 2. For CA[9:0], CK, CK#, and CS# VDD stands for VDDCA. For DQ, DM, DQS, and DQS#, VDD stands for VDDQ. 3. For CA[9:0], CK, CK#, and CS# VSS stands for VSSCA. For DQ, DM, DQS, and DQS#, VSS stands for VSSQ. Confidential - 82 of 125 - Rev.1.0 Jan. 2018 AS4C32M32MD2A-25BIN AS4C64M16MD2A-25BIN Figure 59: Differential AC Swing Time and tDVAC Table 51: Differential AC and DC Input Levels For CK and CK#, VREF = VREFCA(DC); For DQS and DQS# VREF = VREFDQ(DC) Symbol Parameter LPDDR2-800 to LPDDR2-466 Min VIH,diff(AC) Differential input HIGH AC 2 × (VIH(AC) - VREF) VIL,diff(AC) Differential input LOW AC VIH,diff(DC) Differential input HIGH VIL,diff(DC) Differential input LOW LPDDR2-400 to LPDDR2-200 Max Min Max note1 2 × (VIH(AC) - VREF) note1 note 1 2 × (VIH(AC) – VREF) note 1 2 × (VREF - VIL(AC)) 2 × (VIH(DC) - VREF) note 1 2 × (VIH(DC) - VREF) note 1 note1 2 × (VREF - VIL(DC)) note1 2 × (VREF - VIL(DC)) Unit notes V 2 V 2 V 3 V 3 Notes : 1. These values are not defined, however the single-ended signals CK, CK#, DQS, and DQS# must be within the respective limits (VIH(DC)max, VIL(DC)min) for single-ended signals and must comply with the specified limitations for overshoot and undershoot (see Figure 65). 2. For CK and CK#, use VIH/VIL(AC) of CA and VREFCA; for DQS and DQS#, use VIH/VIL(AC) of DQ and VREFDQ. If a reduced AC HIGH or AC LOW is used for a signal group, the reduced voltage level also applies. 3. Used to define a differential signal slew rate. Confidential - 83 of 125 - Rev.1.0 Jan. 2018 AS4C32M32MD2A-25BIN AS4C64M16MD2A-25BIN Table 52: CK/CK# and DQS/DQS# Time Requirements Before Ringback (tDVAC) Slew Rate (V/ns) tDVAC(ps) at VIH/VILdiff(AC) = 440mV tDVAC(ps) at VIH/VILdiff(AC) = 600mV Min Min >4.0 175 75 4.0 170 57 3.0 167 50 2.0 163 38 1.8 162 34 1.6 161 29 1.4 159 22 1.2 155 13 1.0 150 0