AS4C4M4F1-60JC

AS4C4M4F0 AS4C4M4F1 ® 5V 4M×4 CMOS DRAM (Fast Page mode) Features • Organization: 4,194,304 words × 4 bits • High speed - 50/60 ns RAS access time - 25/30 ns column address access time - 12/15 ns CAS access time • TTL-compatible, three-state I/O • JEDEC standard package • Latch-up current ≥ 200 mA • ESD protection ≥ 2000 mV • Industrial and commercial temperature available - 300 mil, 24/26-pin SOJ - 300 mil, 24/26-pin TSOP • Low power consumption - Active: 908 mW max - Standby: 5.5 mW max, CMOS I/O • Fast page mode • Refresh - 4096 refresh cycles, 64 ms refresh interval for AS4C4M4F0 - 2048 refresh cycles, 32 ms refresh interval for AS4C4M4F1 - RAS-only or CAS-before-RAS refresh or self-refresh Pin arrangement SOJ VCC I/O0 I/O1 WE RAS *NC/A11 A10 A0 A1 A2 A3 VCC 1 2 3 4 5 6 8 9 10 11 12 13 26 25 24 23 22 21 19 18 17 16 15 14 GND I/O3 I/O2 CAS OE A9 A8 A7 A6 A5 A4 GND VCC I/O0 I/O1 WE RAS *NC/A11 A10 A0 A1 A2 A3 VCC 1 2 3 4 5 6 8 9 10 11 12 13 Pin designation TSOP 26 25 24 23 22 21 19 18 17 16 15 14 GND I/O3 I/O2 CAS OE A9 A8 A7 A6 A5 A4 GND Pin(s) A0 to A11 RAS CAS WE I/O0 to I/O3 OE VCC GND Description Address inputs Row address strobe Column address strobe Write enable Input/output Output enable Power Ground AS4C4M4F0 *NC on 2K refresh version; A11 on 4K refresh version Selection guide Symbol Maximum RAS access time Maximum column address access time Maximum CAS access time Maximum output enable (OE) access time Minimum read or write cycle time Minimum fast page mode cycle time Maximum operating current Maximum CMOS standby current 4/11/01; v.0.9 AS4C4M4F0 AS4C4M4F0-50 AS4C4M4F1-50 50 25 12 13 85 25 135 1.0 AS4C4M4F0-60 AS4C4M4F1-60 60 30 15 15 100 30 120 1.0 Unit ns ns ns ns ns ns mA mA P. 1 of 18 tRAC tCAA tCAC tOEA tRC tPC ICC1 ICC5 Alliance Semiconductor Copyright © Alliance Semiconductor. All rights reserved. AS4C4M4F0 AS4C4M4F1 ® Functional description The AS4C4M4F0 and AS4C4M4F1 are high performance 16-megabit CMOS Dynamic Random Access Memory (DRAM) devices organized as 4,194,304 words × 4 bits. The devices are fabricated using advanced CMOS technology and innovative design techniques resulting in high speed, extremely low power and wide operating margins at component and system levels. The Alliance 16Mb DRAM family is optimized for use as main memory in PC, workstation, router and switch applications. These devices feature a high speed page mode operation where read and write operations within a single row (or page) can be executed at very high speed by toggling column addresses within that row. Row and column addresses are alternately latched into input buffers using the falling edge of RAS and CAS inputs respectively. Also, RAS is used to make the column address latch transparent, enabling application of column addresses prior to CAS assertion. Refresh on the 4096 address combinations of A0 to A11 must be performed every 64 ms using: • RAS-only refresh: RAS is asserted while CAS is held high. Each of the 4096 rows must be strobed. Outputs remain high impedence. • Hidden refresh: CAS is held low while RAS is toggled. Refresh address is generated internally. Outputs remain low impedence with previous valid data. • CAS-before-RAS refresh (CBR): CAS is asserted prior to RAS. Refresh address is generated internally. Outputs are high-impedence (OE and WE are don't care). • Normal read or write cycles refresh the row being accessed. • Self-refresh cycles Refresh on the 2048 address combinations of A0 to A10 must be performed every 32 ms using: • RAS-only refresh: RAS is asserted while CAS is held high. Each of the 2048 rows must be strobed. Outputs remain high impedence. • Hidden refresh: CAS is held low while RAS is toggled. Refresh address is generated internally. Outputs remain low impedence with previous valid data. • CAS-before-RAS refresh (CBR): CAS is asserted prior to RAS. Refresh address is generated internally. Outputs are high-impedence (OE and WE are don't care). • Normal read or write cycles refresh the row being accessed. • Self-refresh cycles The AS4C4M4F0 and AS4C4M4F1 are available in the standard 24/26-pin plastic SOJ and 24/26-pin plastic TSOP packages. The AS4C4M4F0 and AS4C4M4F1 operate with a single power supply of 5V ± 0.5V and provide TTL compatible inputs and outputs. Logic block diagram for 4K refresh VCC GND Refresh controller Column decoder Sense amp Data I/O buffers I/O0 to I/O3 RAS RAS clock generator CAS CAS clock generator WE WE clock generator A0 A1 A2 A3 A4 A5 A6 A7 A8 A9 A10 A11 OE Address buffers Row decoder 4096 × 1024 × 4 Array (16,777,216) 4/11/01; v.0.9 Alliance Semiconductor P. 2 of 18 AS4C4M4F0 AS4C4M4F1 ® Logic block diagram for 2K refresh VCC GND Refresh controller Column decoder Sense amp Data I/O buffers I/O0 to I/O3 RAS RAS clock generator CAS CAS clock generator WE WE clock generator A0 A1 A2 A3 A4 A5 A6 A7 A8 A9 A10 OE Address buffers Row decoder 2048 × 2048 × 4 Array (16,777,216) Substrate bias generator Recommended operating conditions Parameter Supply voltage Input voltage Ambient operating temperature †V IL Symbol VCC GND VIH VIL Commercial Industrial TA Min 4.5 0.0 2.4 –0.5 0 -40 † Nominal 5.0 0.0 – – – – Max 5.5 0.0 VCC 0.8 70 85 Unit V V V V °C min -3.0V for pulse widths less than 5 ns. Recommended operating conditions apply throughout this document unlesss otherwise specified. 4/11/01; v.0.9 Alliance Semiconductor P. 3 of 18 AS4C4M4F0 AS4C4M4F1 ® Absolute maximum ratings Parameter Input voltage Input voltage (DQs) Power supply voltage Storage temperature (plastic) Soldering temperature × time Power dissipation Short circuit output current Symbol Vin VDQ VCC TSTG TSOLDER PD Iout Min -1.0 -1.0 -1.0 -55 – – – Max +7.0 VCC + 0.5 +7.0 +150 260 × 10 1 50 Unit V V V °C o C × sec W mA DC electrical characteristics -50 Parameter Input leakage current Output leakage current Operating power supply current TTL standby power supply current Average power supply current, RAS refresh mode or CBR Fast page mode average power supply current CMOS standby power supply current Output voltage CAS before RAS refresh current Symbol IIL IOL ICC1 ICC2 ICC3 ICC4 ICC5 VOH VOL ICC6 Test conditions 0V ≤ Vin ≤ +5.5V, Pins not under test = 0V DOUT disabled, 0V ≤ Vout ≤ +5.5V RAS, CAS Address cycling; tRC=min RAS = CAS ≥ VIH RAS cycling, CAS ≥ VIH, tRC = min of RAS low after XCAS low. RAS = VIL, CAS, address cycling: tHPC = min RAS = CAS = VCC - 0.2V IOUT = -5.0 mA IOUT = 4.2 mA RAS, CAS cycling, tRC = min RAS = UCAS = LCAS ≤ 0.2V, WE = OE ≥ VCC - 0.2V, all other inputs at 0.2V or VCC - 0.2V Min -5 -5 – – Max +5 +5 135 2.0 Min -5 -5 – – -60 Max +5 +5 120 2.0 Unit µA µA mA mA 1,2 Notes – 120 – 110 mA 1 – – 2.4 – – 130 1.0 – 0.4 120 – – 2.4 – – 120 1.0 – 0.4 110 mA mA V V mA 1, 2 Self refresh current ICC7 – 0.6 – 0.6 mA 4/11/01; v.0.9 Alliance Semiconductor P. 4 of 18 AS4C4M4F0 AS4C4M4F1 ® AC parameters common to all waveforms -50 Symbol tRC tRP tRAS tCAS tRCD tRAD tRSH tCSH tCRP tASR tRAH tT tREF tCP tRAL tASC tCAH Parameter Random read or write cycle time RAS precharge time RAS pulse width CAS pulse width RAS to CAS delay time RAS to column address delay time CAS to RAS hold time RAS to CAS hold time CAS to RAS precharge time Row address setup time Row address hold time Transition time (rise and fall) Refresh period CAS precharge time Column address to RAS lead time Column address setup time Column address hold time Min 80 30 50 8 15 12 10 40 5 0 8 1 – 8 25 0 8 Max – – 10K 10K 35 25 – – – – – 50 64 – – – Min 100 40 60 10 15 12 10 50 5 0 10 1 – 10 30 0 10 -60 Max – – 10K 10K 43 30 – – – – – 50 64 – – – – Unit ns ns ns ns ns ns ns ns ns ns ns ns ms ns ns ns ns 4,5 3 6 7 Notes Read cycle -50 Symbol tRAC tCAC tAA tRCS tRCH tRRH Parameter Access time from RAS Access time from CAS Access time from address Read command setup time Read command hold time to CAS Read command hold time to RAS Min – – – 0 0 0 Max 50 12 25 – – – Min – – – 0 0 0 -60 Max 60 15 30 – – – Unit ns ns ns ns ns ns 9 9 Notes 6 6,13 7,13 4/11/01; v.0.9 Alliance Semiconductor P. 5 of 18 AS4C4M4F0 AS4C4M4F1 ® Write cycle -50 Symbol tWCS tWCH tWP tRWL tCWL tDS tDH Parameter Write command setup time Write command hold time Write command pulse width Write command to RAS lead time Write command to CAS lead time Data-in setup time Data-in hold time Min 0 10 10 10 8 0 8 Max – – – – – – – Min 0 10 10 10 10 0 10 -60 Max – – – – – – – Unit ns ns ns ns ns ns ns 12 12 Notes 11 11 Read-modify-write cycle -50 Symbol tRWC tRWD tCWD tAWD Parameter Read-write cycle time RAS to WE delay time CAS to WE delay time Column address to WE delay time Min 113 67 32 42 Max – – – – Min 135 77 35 47 -60 Max – – – – Unit ns ns ns ns 11 11 11 Notes Refresh cycle -50 Symbol tCSR tCHR tRPC tCPT Parameter CAS setup time (CAS-before-RAS) CAS hold time (CAS-before-RAS) RAS precharge to CAS hold time CAS precharge time (CBR counter test) Min 5 8 0 10 Max – – – Min 5 10 0 10 -60 Max – – – – Unit ns ns ns ns Notes 3 3 4/11/01; v.0.9 Alliance Semiconductor P. 6 of 18 AS4C4M4F0 AS4C4M4F1 ® Fast page mode cycle -50 Symbol tCPA tRASP tPC tCP tPCM tCRW Parameter Access time from CAS precharge RAS pulse width -60 Max 28 100K – – – – Min – 60 35 10 85 15 Max 35 100K – – – – Unit Notes 13 Min – 50 30 10 80 12 Read-write cycle time CAS precharge time (fast page) Fast page mode RMW cycle Page mode CAS pulse width (RMW) Output enable -50 Symbol tCLZ tROH tOEA tOED tOEZ tOEH tOLZ tOFF Parameter CAS to output in Low Z RAS hold time referenced to OE OE access time OE to data delay Output buffer turnoff delay from OE OE command hold time OE to output in Low Z Output buffer turn-off time Min 0 8 – 13 0 10 0 0 Max – – 13 – 13 – – 13 Min 0 10 – 15 0 10 0 0 -60 Max – – 15 – 15 – – 15 Unit ns ns ns ns ns ns ns ns 8,10 8 Notes 8 Self refresh cycle Std Symbol tRASS tRPS tCHS -50 Parameter RAS pulse width (CBR self refresh) RAS precharge time (CBR self refresh) CAS hold time (CBR self refresh) -60 Max – – – Min 100 105 10 Max – – – Unit µs ns ns Notes Min 100 90 8 4/11/01; v.0.9 Alliance Semiconductor P. 7 of 18 AS4C4M4F0 AS4C4M4F1 ® Notes 1 2 3 ICC1, ICC3, ICC4, and ICC6 are dependent on frequency. ICC1 and ICC4 depend on output loading. Specified values are obtained with the output open. An initial pause of 200 µs is required after power-up followed by any 8 RAS cycles before proper device operation is achieved. In the case of an internal refresh counter, a minimum of 8 CAS-before-RAS initialization cycles instead of 8 RAS cycles are required. 8 initialization cycles are required after extended periods of bias without clocks (greater than 8 ms). AC Characteristics assume tT = 2 ns. All AC parameters are measured with a load equivalent to two TTL loads and 100 pF, VIL (min) ≥ GND and VIH (max) ≤ VCC. VIH (min) and VIL (max) are reference levels for measuring timing of input signals. Transition times are measured between VIH and VIL. Operation within the tRCD (max) limit insures that tRAC (max) can be met. tRCD (max) is specified as a reference point only. If tRCD is greater than the specified tRCD (max) limit, then access time is controlled exclusively by tCAC. Operation within the tRAD (max) limit insures that tRAC (max) can be met. tRAD (max) is specified as a reference point only. If tRAD is greater than the specified tRAD (max) limit, then access time is controlled exclusively by tAA. Assumes three state test load (5 pF and a 380 Ω Thevenin equivalent). Either tRCH or tRRH must be satisfied for a read cycle. tOFF (max) defines the time at which the output achieves the open circuit condition; it is not referenced to output voltage levels. tOFF is referenced from rising edge of RAS or CAS, whichever occurs last. tWCS, tWCH, tRWD, tCWD and tAWD are not restrictive operating parameters. They are included in the datasheet as electrical characteristics only. If tWS ≥ tWS (min) and tWH ≥ tWH (min), the cycle is an early write cycle and data out pins will remain open circuit, high impedance, throughout the cycle. If tRWD ≥ tRWD (min), tCWD ≥ tCWD (min) and tAWD ≥ tAWD (min), the cycle is a read-write cycle and the data out will contain data read from the selected cell. If neither of the above conditions is satisfied, the condition of the data out at access time is indeterminate. These parameters are referenced to CAS leading edge in early write cycles and to WE leading edge in read-write cycles. Access time is determined by the longest of tCAA or tCAC or tCPA tASC ≥ tCP to achieve tPC (min) and tCPA (max) values. These parameters are sampled and not 100% tested. These characteristics apply to AS4C4M4F0 5V devices. 4 5 6 7 8 9 10 11 12 13 14 15 16 AC test conditions - Access times are measured with output reference levels of VOH = 2.4V and VOL = 0.4V, VIH = 2.4V and VIL = 0.8V - Input rise and fall times: 2 ns +5V R1 = 828Ω Dout 100 pF* R2 = 295Ω *including scope and jig capacitance +3.3V R1 = 828Ω Dout 50 pF* R2 = 295Ω *including scope and jig capacitance GND Figure A: Equivalent output load (AS4C4M4E0) GND Figure B: Equivalent output load (AS4LC4M4E0) Key to switching waveforms Rising input Falling input Undefined output/don’t care 4/11/01; v.0.9 Alliance Semiconductor P. 8 of 18 AS4C4M4F0 AS4C4M4F1 ® Read waveform tRC tRAS tRCD tRSH tRP RAS tCSH tCRP tASC tRCS tCAH tCAS CAS tRAD tASR tRAH Column address tRRH tRCH tRAL Address Row address WE tROH tROH tWEZ OE tRAC tAA tOEA tCAC tCLZ tREZ Data out tOLZ tOEZ tOFF (see note 11) DQ Early write waveform tRC tRAS tRP RAS tCSH tRSH tCRP tRCD tRAD tASC tASR tRAH tCAH Column address tCWL tRWL tWP tWCS tWCH tCAS tRAL CAS Address Row address WE OE tDS tDH Data in DQ 4/11/01; v.0.9 Alliance Semiconductor P. 9 of 18 AS4C4M4F0 AS4C4M4F1 ® Write waveform tRC tRAS tRP OE controlled RAS tCSH tCRP tRCD tRSH tCAS tRAL tRAD tRAH tASC tCAH Column address tRWL tCWL tWP CAS tASR Address Row address WE tOEH OE tOED tDS tDH DQ Data in Read-modify-write waveform tRWC tRAS tRP tCAS tCRP tRCD tCSH tRSH RAS CAS tRAD tASR tRAH Row address tAR tRAL tASC tCAH Column address tRWD tAWD tRCS tCWD tOEA tOEZ tOED tCWL tWP tRWL Address WE OE tRAC tAA tCAC tCLZ tDS tDH Data in DQ tOLZ Data out 4/11/01; v.0.9 Alliance Semiconductor P. 10 of 18 AS4C4M4F0 AS4C4M4F1 ® Fast page mode read waveform tRASP tRP RAS tCSH tCRP tRCD tCAS tCP tPC tRSH CAS tAR tRAD tASR tRAH tASC tRAL tCAH Address WE Row Column tRCS tRCH tOEA Column tRCS Column tRCH tOEA tRRH OE tRAC tCLZ tAA tOEZ tCAP tOFF tCAC I/O Data out Data out Data out Fast page mode byte write waveform tRASP tRP RAS tPCM tCSH tRCD tCAS tCP tCRP CAS tASR tRAD tRAH tCAH tCAH tRAL tCAH Address Row tRCS Column tRWD tCWD tAWD Column tCWL tCWD Column tRWL tCWD tAWD tCWL tWP WE tOEA tOEZ tAA tRAC tCLZ tCAC tDS tDH tDS tCLZ tCAC tCAP tCLZ tCAC tOED tOEA OE I/O Data in Data out Data in Data out Data in Data out 4/11/01; v.0.9 Alliance Semiconductor P. 11 of 18 AS4C4M4F0 AS4C4M4F1 ® Fast page mode early write waveform tRASP tRAH tRWL tRCD tCSH tCAS tASC tWCS tCP tRAL tRSH tPC tCAH RAS tCRP CAS tAR tASR tRAD Address Row Column Column Column tCWL tWP tWCH tOEH WE OE tHDR tDS tDH tOED I/O Data In Data in Data in CAS before RAS refresh waveform tRC tRP tRAS WE = VIH RAS tRPC tCP tCSR tCHR CAS DQ OPEN RAS only refresh waveform tRC tRAS tRP tRPC WE = OE = VIH or VIL RAS tCRP CAS tASR tRAH Row address Address 4/11/01; v.0.9 Alliance Semiconductor P. 12 of 18 AS4C4M4F0 AS4C4M4F1 ® Hidden refresh waveform (read) tRC tRAS tRP tCHR tRCD tRSH tCRP tRAS tRC tRP RAS tCRP CAS tRAD tRAH tASR tASC Row tRCS Col address tRRH tOEA tAR tCAH Address WE OE tRAC tAA tCAC tCLZ tOEZ Data out tOFF DQ Hidden refresh waveform (write) tRC tRAS tRP tCHR RAS tCRP tRCD tRSH CAS tAR tRAD tRAH tASR tASC Row address tWCR tWP tWCS tWCH Col address tRWL tRAL tCAH Address WE tDS tDHR tDH Data in DQ OE 4/11/01; v.0.9 Alliance Semiconductor P. 13 of 18 AS4C4M4F0 AS4C4M4F1 ® CAS before RAS refresh counter test waveform tRAS tRSH tRP RAS tCSR tCHR tCPT tCAS CAS tASC tCAH tRAL Address Col address tAA tCAC tCLZ tOFF tOEZ Data out tRCS tRRH tRCH DQ Read cycle WE tROH tOEA OE tRWL tCWL tWP tWCH tWCS Write cycle WE tDH tDS DQ OE Data in tRCS tCWD tAWD tRWL tWP tCWL WE Read-Write cycle tOEA tOED OE t AA tCLZ tCAC tOEZ tDS Data out Data in tDH DQ 4/11/01; v.0.9 Alliance Semiconductor P. 14 of 18 AS4C4M4F0 AS4C4M4F1 ® CAS-before-RAS self refresh cycle tRP tRASS tRPS RAS tRPC tCP tCSR tCHS tRPC UCAS, LCAS tCEZ DQ Typical DC and AC characteristics 1.5 Normalized access time 1.4 1.3 1.2 1.1 1.0 0.9 0.8 4.0 4.5 5.0 5.5 Supply voltage (V) Typical supply current ICC vs. supply voltage VCC 6.0 Ta = 25°C Normalized access time tRAC vs. supply voltage VCC 1.5 Normalized access time 1.4 1.3 1.2 1.1 1.0 0.9 0.8 –55 –10 35 80 125 Ambient temperature (°C) Typical supply current ICC vs. ambient temperature Ta Typical access time Normalized access time tRAC vs. ambient temperature Ta 100 90 80 -70 70 60 50 40 30 50 100 150 200 Load capacitance (pF) 250 -60 -50 Typical access time tRAC vs. load capacitance CL 170 160 Supply current (mA) 150 140 130 120 110 100 4.0 170 160 Supply current (mA) 150 140 130 120 110 35 30 Power-on current (mA) Typical power-on current IPO vs. cycle rate 1/tRC -50 -60 -70 25 20 15 10 5 0.0 2 4 6 8 Cycle rate (MHz) 10 -50 -60 -70 4.5 5.0 5.5 Supply voltage (V) 6.0 100 –55 –10 35 80 125 Ambient temperature (°C) 4/11/01; v.0.9 Alliance Semiconductor P. 15 of 18 AS4C4M4F0 AS4C4M4F1 ® Typical refresh current ICC3 vs. supply voltage VCC Typical refresh current ICC3 vs. Ambient temperature Ta 160 140 -50 -60 -70 Refresh current (mA) 120 100 80 60 40 4.5 5.0 5.5 Supply voltage (V) 6.0 20 0.0 20 40 60 80 Ambient temperature (°C) Typical output sink current IOL vs. output voltage VOL Output source current (mA) Stand-by current (mA) -50 -60 -70 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 4.0 4.5 5.0 5.5 Supply voltage (V) 6.0 Typical TTL stand-by current ICC2 vs. supply voltage VCC 160 140 Refresh current (mA) 120 100 80 60 40 20 4.0 3.5 3.0 Stand-by current (mA) 2.5 2.0 1.5 1.0 0.5 0.0 Typical TTL stand-by current ICC2 vs. ambient temperature Ta Output sink current (mA) 70 60 50 40 30 20 10 0.0 0.0 70 60 50 40 30 20 10 0.0 Typical output source current IOH vs. output voltage VOH 0 20 40 60 80 Ambient temperature (°C) 0.5 1.0 1.5 Output voltage (V) 2.0 0.0 1.0 2.0 3.0 Output voltage (V) 4.0 Hyper page mode current (mA) 120 100 80 60 40 20 0.0 0 20 40 60 80 Ambient temperature (°C) -50 -60 -70 Hyper page mode current (mA) 140 Typical fast page mode current ICC4 vs. ambient temperature Ta 140 120 100 80 60 40 20 Typical fast page mode current ICC4 vs. supply voltage VCC -50 -60 -70 0.0 4.0 4.5 5.0 5.5 Supply voltage (V) 6.0 4/11/01; v.0.9 Alliance Semiconductor P. 16 of 18 AS4C4M4F0 AS4C4M4F1 ® Capacitance 15 Parameter Input capacitance DQ capacitance Symbol CIN1 CIN2 CDQ Signals A0 to A9 RAS, UCAS, LCAS, WE, OE DQ0 to DQ15 ƒ = 1 MHz, Ta = Room temperature Test conditions Vin = 0V Vin = 0V Vin = Vout = 0V Max 5 7 7 Unit pF pF pF AS4C4M4F0 ordering information Package \ RAS access time Plastic SOJ, 300 mil, 24/26-pin Plastic TSOP, 300 mil, 24/26-pin 5V 5V 50 ns AS4C4M4F0-50JC AS4C4M4F0-50JI AS4C4M4F0-50TC AS4C4M4F0-50TI 60 ns AS4C4M4F0-60JC AS4C4M4F0-60JI AS4C4M4F0-60TC AS4C4M4F0-60TI AS4C4M4F1 ordering information Package \ RAS access time Plastic SOJ, 300 mil, 24/26-pin Plastic TSOP, 300 mil, 24/26-pin 5V 5V 50 ns AS4C4M4F1-50JC AS4C4M4F1-50JI AS4C4M4F1-50TC AS4C4M4F1-50TI 60 ns AS4C4M4F1-60JC AS4C4M4F1-60JI AS4C4M4F1-60TC AS4C4M4F1-60TI AS4C4M4F0/F1 family part numbering system AS4 DRAM prefix C C = 5V CMOS 4M4 4M×4 F0/F1 F0=4K refresh F1=2K refresh –XX RAS access time X X Package: Temperature range J = SOJ 300 mil, 24/26 C=Commercial, 0°C to 70 °C T = TSOP 300 mil, 24/26 I=Industrial, -40°C to 85°C 4/11/01; v.0.9 Alliance Semiconductor P. 17 of 18 © Copyright Alliance Semiconductor Corporation. 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