AS6C1608-55TIN

AS6C1608 2048K X 8 BIT LOW POWER CMOS SRAM Rev. 1.1 REVISION HISTORY Revision Rev. 1.0 Rev. 1.1 Description Initial Issue Add package “48-ball 8mm × 10mm TFBGA” Revised ORDERING INFORMATION in page 11 Issue Date Jan.09.2012 July.12.2013 Alliance Memory Inc.reserves the rights to change the specifications and products without notice. Alliance Memory, Inc. 551 Taylor Way, Suite #1, San Carlos, CA 94070, USA Tel: +1 650 610 6800 Fax: +1 650 620 9211 0 AS6C1608 2048K X 8 BIT LOW POWER CMOS SRAM Rev. 1.1 FEATURES GENERAL DESCRIPTION  Fast access time : 55/70ns  Low power consumption: Operating current : 45/30mA (TYP.) Standby current : 4A (TYP.) SL-version  Single 2.7V ~ 3.6V power supply  All inputs and outputs TTL compatible  Fully static operation  Tri-state output  Data retention voltage : 1.2V (MIN.)  Green package available  Package : 44-pin 400 mil TSOP-II 48-ball 8mm x 10mm TFBGA The AS6C1608 is a 16,777,216-bit low power CMOS static random access memory organized as 2,097,152 words by 8 bits. It is fabricated using very high performance, high reliability CMOS technology. Its standby current is stable within the range of operating temperature. The AS6C1608 is well designed for very low power system applications, and particularly well suited for battery back-up nonvolatile memory application. The AS6C1608 operates from a single power supply of 2.7V ~ 3.6V and all inputs and outputs are fully TTL compatible PRODUCT FAMILY Product Family AS6C1608(I) Operating Temperature -40 ~ 85℃ Vcc Range Speed 2.7 ~ 3.6V 55/70ns FUNCTIONAL BLOCK DIAGRAM PIN DESCRIPTION Vcc Vss A0-A20 DECODER DQ0-DQ7 I/O DATA CIRCUIT CE# CE2 WE# OE# CONTROL CIRCUIT Power Dissipation Standby(ISB1,TYP.) Operating(Icc,TYP.) 4µA(SL) 45/30mA 2048Kx8 MEMORY ARRAY SYMBOL DESCRIPTION A0 – A20 Address Inputs DQ0 – DQ7 Data Inputs/Outputs CE#, CE2 Chip Enable Inputs WE# Write Enable Input OE# Output Enable Input VCC Power Supply VSS Ground NC No Connection COLUMN I/O PIN CONFIGURATION Alliance Memory Inc.reserves the rights to change the specifications and products without notice. Alliance Memory, Inc. 551 Taylor Way, Suite #1, San Carlos, CA 94070, USA Tel: +1 650 610 6800 Fax: +1 650 620 9211 1 AS6C1608 2048K X 8 BIT LOW POWER CMOS SRAM Rev. 1.1 44-pin TSOP(Type II) 48-ball 8mmx10mm TFBGA A NC OE# A0 A1 A2 CE2 B NC NC A3 A4 CE# NC C DQ0 NC A5 A6 NC DQ4 D Vss DQ1 A17 A7 DQ5 Vcc E Vcc DQ2 NC A16 DQ6 Vss F DQ3 NC A14 A15 NC DQ7 G NC A20 A12 A13 WE# NC H A18 A8 A9 A10 A11 A19 1 2 5 6 3 4 TFBGA Alliance Memory Inc.reserves the rights to change the specifications and products without notice. Alliance Memory, Inc. 551 Taylor Way, Suite #1, San Carlos, CA 94070, USA Tel: +1 650 610 6800 Fax: +1 650 620 9211 2 AS6C1608 2048K X 8 BIT LOW POWER CMOS SRAM Rev. 1.1 ABSOLUTE MAXIMUM RATINGS PARAMETER Voltage on VCC relative to VSS Voltage on any other pin relative to VSS SYMBOL VT1 VT2 RATING -0.5 to 4.6 -0.5 to VCC+0.5 UNIT V V TA -40 to 85(I grade) ℃ TSTG PD IOUT -65 to 150 1 50 ℃ Operating Temperature Storage Temperature Power Dissipation DC Output Current W mA *Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating only and functional operation of the device or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to the absolute maximum rating conditions for extended period may affect device reliability. TRUTH TABLE CE# CE2 OE# WE# H X X X L Output Disable L Read L L MODE Standby Write Note: SUPPLY CURRENT X I/O OPERATION High-Z X X High-Z ISB,ISB1 H H H High-Z ICC,ICC1 H L H DOUT ICC,ICC1 H X L DIN ICC,ICC1 H = VIH, L = VIL, X = Don't care. Alliance Memory Inc.reserves the rights to change the specifications and products without notice. Alliance Memory, Inc. 551 Taylor Way, Suite #1, San Carlos, CA 94070, USA Tel: +1 650 610 6800 Fax: +1 650 620 9211 3 ISB,ISB1 AS6C1608 2048K X 8 BIT LOW POWER CMOS SRAM Rev. 1.1 DC ELECTRICAL CHARACTERISTICS SYMBOL TEST CONDITION PARAMETER Supply Voltage VCC *1 Input High Voltage VIH *2 Input Low Voltage VIL Input Leakage Current ILI VCC ≧ VIN ≧ VSS Output Leakage VCC ≧ VOUT ≧ VSS ILO Current Output Disabled Output High Voltage VOH IOH = -1mA Output Low Voltage VOL IOL = 2mA Cycle time = Min. - 55 CE# = VIL and CE2 = VIH ICC II/O = 0mA - 70 Other pins at VIL or VIH Average Operating Power supply Current Cycle time = 1µs CE#≦0.2V and CE2≧VCC-0.2V ICC1 II/O = 0mA Other pins at 0.2V or VCC-0.2V CE# = VIH or CE2 = VIL ISB Other pins at VIL or VIH *5 25℃ SL CE# ≧VCC-0.2V Standby Power *5 SLI Supply Current 40℃ or CE2≦0.2V ISB1 Other pins at 0.2V SL or VCC-0.2V SLI MIN. 2.7 2.2 - 0.2 -1 TYP. 3.0 - *4 MAX. 3.6 VCC+0.3 0.6 1 UNIT V V V µA -1 - 1 µA 2.2 - 2.7 - 0.4 V V - 45 60 mA - 30 45 mA - 8 16 mA - 0.3 2 mA - 4 4 4 4 10 10 30 40 µA µA µA µA Notes: 1. VIH(max) = VCC + 2.0V for pulse width less than 6ns. 2. VIL(min) = VSS - 2.0V for pulse width less than 6ns. 3. Over/Undershoot specifications are characterized on engineering evaluation stage, not for mass production test. 4. Typical values are included for reference only and are not guaranteed or tested. Typical valued are measured at VCC = VCC(TYP.) and TA = 25℃ 5. This parameter is measured at VCC = 3.0V CAPACITANCE (TA = 25℃, f = 1.0MHz) PARAMETER Input Capacitance Input/Output Capacitance SYMBOL CIN CI/O MIN. - MAX 6 8 Note : These parameters are guaranteed by device characterization, but not production tested. AC TEST CONDITIONS Input Pulse Levels Input Rise and Fall Times Input and Output Timing Reference Levels Output Load 0.2V to VCC - 0.2V 3ns 1.5V CL = 30pF + 1TTL, IOH/IOL = -1mA/2mA Alliance Memory Inc.reserves the rights to change the specifications and products without notice. Alliance Memory, Inc. 551 Taylor Way, Suite #1, San Carlos, CA 94070, USA Tel: +1 650 610 6800 Fax: +1 650 620 9211 4 UNIT pF pF AS6C1608 2048K X 8 BIT LOW POWER CMOS SRAM Rev. 1.1 AC ELECTRICAL CHARACTERISTICS (1) READ CYCLE PARAMETER Read Cycle Time Address Access Time Chip Enable Access Time Output Enable Access Time Chip Enable to Output in Low-Z Output Enable to Output in Low-Z Chip Disable to Output in High-Z Output Disable to Output in High-Z Output Hold from Address Change (2) WRITE CYCLE PARAMETER Write Cycle Time Address Valid to End of Write Chip Enable to End of Write Address Set-up Time Write Pulse Width Write Recovery Time Data to Write Time Overlap Data Hold from End of Write Time Output Active from End of Write Write to Output in High-Z SYM. tRC tAA tACE tOE tCLZ* tOLZ* tCHZ* tOHZ* tOH SYM. tWC tAW tCW tAS tWP tWR tDW tDH tOW * tWHZ* AS6C1608-55 MIN. MAX. 55 55 55 30 10 5 20 20 10 - AS6C1608-70 MIN. MAX. 70 70 70 35 10 5 25 25 10 - UNIT AS6C1608-55 MIN. MAX. 55 50 50 0 45 0 25 0 5 20 AS6C1608-70 MIN. MAX. 70 60 60 0 55 0 30 0 5 25 UNIT *These parameters are guaranteed by device characterization, but not production tested. Alliance Memory Inc.reserves the rights to change the specifications and products without notice. Alliance Memory, Inc. 551 Taylor Way, Suite #1, San Carlos, CA 94070, USA Tel: +1 650 610 6800 Fax: +1 650 620 9211 5 ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns AS6C1608 2048K X 8 BIT LOW POWER CMOS SRAM Rev. 1.1 TIMING WAVEFORMS READ CYCLE 1 (Address Controlled) (1,2) tRC Address tAA Dout tOH Previous Data Valid Data Valid READ CYCLE 2 (CE# and CE2 and OE# Controlled) (1,3,4,5) tRC Address tAA CE# tACE CE2 OE# tOE tOH tOHZ tCHZ tOLZ tCLZ Dout High-Z Data Valid High-Z Notes : 1.WE# is high for read cycle. 2.Device is continuously selected OE# = low, CE# = low., CE2 = high. 3.Address must be valid prior to or coincident with CE# = low, CE2 = high; otherwise tAA is the limiting parameter. 4.tCLZ, tOLZ, tCHZ and tOHZ are specified with CL = 5pF. Transition is measured ±500mV from steady state. 5.At any given temperature and voltage condition, tCHZ is less than tCLZ , tOHZ is less than tOLZ. Alliance Memory Inc.reserves the rights to change the specifications and products without notice. Alliance Memory, Inc. 551 Taylor Way, Suite #1, San Carlos, CA 94070, USA Tel: +1 650 610 6800 Fax: +1 650 620 9211 6 AS6C1608 2048K X 8 BIT LOW POWER CMOS SRAM Rev. 1.1 WRITE CYCLE 1 (WE# Controlled) (1,2,3,5,6) tWC Address tAW CE# tCW CE2 tAS tWP tWR WE# tWHZ Dout TOW High-Z (4) tDW Din (4) tDH Data Valid WRITE CYCLE 2 (CE# and CE2 Controlled) (1,2,5,6) tWC Address tAW CE# tAS tWR tCW CE2 tWP WE# tWHZ Dout High-Z (4) tDW Din tDH Data Valid Notes : 1.WE#, CE# must be high or CE2 must be low during all address transitions. 2.A write occurs during the overlap of a low CE#, high CE2, low WE#. 3.During a WE#controlled write cycle with OE# low, tWP must be greater than tWHZ + tDW to allow the drivers to turn off and data to be placed on the bus. 4.During this period, I/O pins are in the output state, and input signals must not be applied. 5.If the CE#low transition and CE2 high transition occurs simultaneously with or after WE# low transition, the outputs remain in a high impedance state. 6.tOW and tWHZ are specified with CL = 5pF. Transition is measured ±500mV from steady state. Alliance Memory Inc.reserves the rights to change the specifications and products without notice. Alliance Memory, Inc. 551 Taylor Way, Suite #1, San Carlos, CA 94070, USA Tel: +1 650 610 6800 Fax: +1 650 620 9211 7 AS6C1608 2048K X 8 BIT LOW POWER CMOS SRAM Rev. 1.1 DATA RETENTION CHARACTERISTICS PARAMETER SYMBOL TEST CONDITION MIN. VCC for Data Retention VDR 1.2 CE# ≧ VCC - 0.2V or CE2≦0.2V SL 25℃ VCC = 1.2V SLI 40℃ Data Retention Current IDR CE# ≧VCC-0.2V or CE2≦0.2V SL Other pins at 0.2V or VCC-0.2V SLI Chip Disable to Data See Data Retention tCDR 0 Retention Time Waveforms (below) Recovery Time tR tRC* tRC* = Read Cycle Time TYP. 2.5 2.5 2.5 2.5 MAX. 3.6 10 10 30 40 UNIT V µA µA µA µA - - ns - - ns DATA RETENTION WAVEFORM Low Vcc Data Retention Waveform (1) (CE# controlled) VDR ¡Ù 1.2V Vcc Vcc(min.) Vcc(min.) tCDR CE# VIH tR CE# ¡Ù Vcc-0.2V VIH Low Vcc Data Retention Waveform (2) (CE2 controlled) VDR ¡Ù 1.2V Vcc Vcc(min.) Vcc(min.) tCDR CE2 tR CE2 ¡Ø 0.2V VIL VIL Alliance Memory Inc.reserves the rights to change the specifications and products without notice. Alliance Memory, Inc. 551 Taylor Way, Suite #1, San Carlos, CA 94070, USA Tel: +1 650 610 6800 Fax: +1 650 620 9211 8 AS6C1608 2048K X 8 BIT LOW POWER CMOS SRAM Rev. 1.1 PACKAGE OUTLINE DIMENSION 44-pin 400mil TSOP-II Package Outline Dimension SYMBOLS A A1 A2 b c D E E1 e L ZD y Θ DIMENSIONS IN MILLMETERS MIN. NOM. MAX. 1.20 0.05 0.10 0.15 0.95 1.00 1.05 0.30 0.45 0.12 0.21 18.212 18.415 18.618 11.506 11.760 12.014 9.957 10.160 10.363 0.800 0.40 0.50 0.60 0.805 0.076 o o o 0 3 6 DIMENSIONS IN MILS MIN. NOM. MAX. 47.2 2.0 3.9 5.9 37.4 39.4 41.3 11.8 17.7 4.7 8.3 717 725 733 453 463 473 392 400 408 31.5 15.7 19.7 23.6 31.7 3 o o o 0 3 6 Alliance Memory Inc.reserves the rights to change the specifications and products without notice. Alliance Memory, Inc. 551 Taylor Way, Suite #1, San Carlos, CA 94070, USA Tel: +1 650 610 6800 Fax: +1 650 620 9211 9 AS6C1608 Rev. 1.1 2048K X 8 BIT LOW POWER CMOS SRAM 48-ball 8mm × 10mm TFBGA Package Outline Dimension Alliance Memory Inc.reserves the rights to change the specifications and products without notice. Alliance Memory, Inc. 551 Taylor Way, Suite #1, San Carlos, CA 94070, USA Tel: +1 650 610 6800 Fax: +1 650 620 9211 10 AS6C1608 2048K X 8 BIT LOW POWER CMOS SRAM Rev. 1.1 ORDERING INFORMATION Alliance Part no Organisation Vcc Range Package Operating Temp Speed ns AS6C1608-XXBIN - Tray 2048 x 8 2.7V – 3.6V 48-ball 8mm x 10mm -40℃~85℃ TFBGA 55/70 AS6C1608-XXBINTR – Tape & Reel 2048 x 8 2.7V – 3.6V 48-ball 8mm x 10mm -40℃~85℃ TFBGA 55/70 AS6C1608-XXTIN – Tray 2048 x 8 2.7V – 3.6V 44-pin 400mil 2048 x 8 2.7V – 3.6V 44-pin 400mil AS6C1608-XXTINTR – Tape & Reel TSOP-II TSOP-II -40℃~85℃ 55/70 -40℃~85℃ 55/70 PART NUMBERING SYSTEM AS6C LOW POWER SRAM PREFIX 1608 DEVICE NUMBER 16 = 16M 08 = by 8 -55/70 Access Time B or T B = 48ball TFBGA (8mm x 10mm) Or T = 44-pin 400mil TSOP-II I Temperature range: I = Industrial (-40°C to 85°C) Alliance Memory Inc.reserves the rights to change the specifications and products without notice. Alliance Memory, Inc. 551 Taylor Way, Suite #1, San Carlos, CA 94070, USA Tel: +1 650 610 6800 Fax: +1 650 620 9211 11 N N = Lead Free ROHS Compliant Part AS6C1608 Rev. 1.1 2048K X 8 BIT LOW POWER CMOS SRAM THIS PAGE IS LEFT BLANK INTENTIONALLY. Alliance Memory Inc.reserves the rights to change the specifications and products without notice. Alliance Memory, Inc. 551 Taylor Way, Suite #1, San Carlos, CA 94070, USA Tel: +1 650 610 6800 Fax: +1 650 620 9211 12