AS7C1025C

September 2006 Advance Information ® AS7C1025C 5V 128K X 8 CMOS SRAM (Center power and ground) Features • Industrial (-40o to 85oC) temperature. • Organization: 131,072 x 8 bits • High speed - 12 ns address access time - 6 ns output enable access time • Low power consumption via chip deselect • Easy memory expansion with CE, OE inputs • Center power and ground • TTL/LVTTL-compatible, three-state I/O • JEDEC-standard package - 32-pin, 400 mil SOJ • ESD protection ≥ 2000 volts Pin arrangement Logic block diagram 32-pin SOJ (400 mil) VCC GND Input buffer A0 A1 A2 A3 A4 A5 A6 A7 A8 Address decoder I/O7 A0 A1 A2 A3 CE I/O0 I/O1 VCC GND I/O2 I/O3 WE A4 A5 A6 A7 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 32 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17 A16 A15 A14 A13 OE I/O7 I/O6 GND VCC I/O5 I/O4 A12 A11 A10 A9 A8 131,072 x 8 Array (1,048,576) Sense amp I/O0 WE OE CE Address decoder A9 A10 A11 A12 A13 A14 A15 A16 Control circuit 12/5/06, v. 1.0 Alliance Memory AS7C1025C P. 1 of 9 Copyright © Alliance Memory. All rights reserved. AS7C1025C ® Functional description The AS7C1025C is a 5V high-performance CMOS 1,048,576-bit Static Random Access Memory (SRAM) devices organized as 131,072 x 8 bits. They are designed for memory applications where fast data access, low power, and simple interfacing are desired. Equal address access and cycle times (tAA, tRC, tWC) of 12 ns with output enable access times (tOE) of 6 ns are ideal for highperformance applications. The chip enable input CE permits easy memory and expansion with multiple-bank memory systems. When CE is high, the device enters standby mode. If inputs are still toggling, the device will consume ISB power. If the bus is static, then full standby power is reached (ISB1). A write cycle is accomplished by asserting write enable (WE) and chip enable (CE). Data on the input pins I/O0 through I/O7 is written on the rising edge of WE (write cycle 1) or CE (write cycle 2). To avoid bus contention, external devices should drive I/O pins only after outputs have been disabled with output enable (OE) or write enable (WE). A read cycle is accomplished by asserting output enable (OE) and chip enable (CE), with write enable (WE) high. The chips drive I/O pins with the data word referenced by the input address. When either chip enable or output enable is inactive or write enable is active, output drivers stay in high-impedance mode. All chip inputs and outputs are TTL-compatible, and operation is from a single 5 V supply. The AS7C1025C is packaged in common industry standard packages. Absolute maximum ratings Parameter Voltage on VCC relative to GND Voltage on any pin relative to GND Power dissipation Storage temperature (plastic) Ambient temperature with VCC applied DC current into outputs (low) Note: Stresses greater than those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions outside those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability. Symbol Vt1 Vt2 PD Tstg Tbias IOUT Min –0.50 –0.50 – –55 –55 – Max +7.0 VCC + 0.5 1.25 +125 +125 50 Unit V V W oC o C mA Truth table CE H L L L WE X H H L OE X H L X Data High Z High Z DOUT DIN Mode Standby (ISB, ISB1) Output disable (ICC) Read (ICC) Write (ICC) Key: X = don’t care, L = low, H = high. 12/5/06, v. 1.0 Alliance Memory P. 2 of 9 AS7C1025C ® Recommended operating conditions Parameter Supply voltage Input voltage Ambient operating temperature (Industrial) Notes: VIL min = -1.0V for pulse width less than 5ns, once per cycle. VIH max = VCC+2.0V for pulse width less than 5ns, once per cycle. Symbol VCC VIH VIL TA Min 4.5 2.2 –0.5 –40 Nominal 5.0 – – – Max 5.5 VCC + 0.5 0.8 85 Unit V V V oC DC operating characteristics (over the operating range)1 AS7C1025C-12 Parameter Input leakage current Output leakage current Operating power supply current Standby power supply current1 Symbol | ILI | | ILO | ICC ISB Test conditions VCC = Max, VIN = GND to VCC VCC = Max, CE = VIH, Vout = GND to VCC VCC = Max CE ≤ VIL, f = fMax, IOUT = 0 mA VCC = Max CE ≥ VIH, f = fMax VCC = Max CE ≥ VCC–0.2 V, VIN ≤ 0.2 V or VIN ≥ VCC –0.2 V, f=0 IOL = 8 mA, VCC = Min IOH = –4 mA, VCC = Min Min – – – – Max 5 5 160 40 Unit μA μA mA mA ISB1 10 mA Output voltage VOL VOH – 2.4 0.4 – V V Capacitance (f = 1 MHz, Ta = 25o C, VCC = NOMINAL)2 Parameter Input capacitance I/O capacitance Note: This parameter is guaranteed by device characterization, but is not production tested. Symbol CIN CI/O Signals A, CE, WE, OE I/O Test conditions VIN = 3dV VIN = VOUT = 3dV Max 8 8 Unit pF pF 12/5/06, v. 1.0 Alliance Memory P. 3 of 9 AS7C1025C ® Read cycle (over the operating range)3,9 AS7C1025C-12 Parameter Read cycle time Address access time Chip enable (CE) access time Output enable (OE) access time Output hold from address change CE low to output in low Z CE low to output in high Z OE low to output in low Z OE high to output in high Z Power up time Power down time Symbol tRC tAA tACE tOE tOH tCLZ tCHZ tOLZ tOHZ tPU tPD Min 12 – – – 4 3 0 0 0 0 – Max – 12 12 6 – – 6 – 5 – 12 Unit ns ns ns ns ns ns ns ns ns ns ns 5 4, 5 4, 5 4, 5 4, 5 4, 5 4, 5 3 3 Notes Key to switching waveforms Rising input Falling input Undefined/don’t care Read waveform 1 (address controlled)3,6,7,9 tRC Address DOUT tAA Data valid tOH Read waveform 2 (CE and OE controlled)3,6,8,9 CE tOE OE DOUT Supply current tACE tCLZ tPU Data valid tPD 50% 50% ICC ISB tOLZ tOHZ tCHZ tRC1 12/5/06, v. 1.0 Alliance Memory P. 4 of 9 AS7C1025C ® Write cycle (over the operating range)11 AS7C1025C-12 Parameter Write cycle time Chip enable (CE) to write end Address setup to write end Address setup time Write pulse width Write recovery time Address hold from end of write Data valid to write end Data hold time Write enable to output in high Z Output active from write end Symbol tWC tCW tAW tAS tWP tWR tAH tDW tDH tWZ tOW Min 12 8 8 0 8 0 0 6 0 – 3 Max – – – – – – – – – 5 – Unit ns ns ns ns ns ns ns ns ns ns ns 4, 5 4, 5 4, 5 Notes Write waveform 1 (WE controlled)10,11 tWC tAW Address tWP WE tAS DIN tWZ DOUT tDW Data valid tOW tDH tWR tAH 12/5/06, v. 1.0 Alliance Memory P. 5 of 9 AS7C1025C ® Write waveform 2 (CE controlled)10,11 tAW Address tAS CE tWP WE tWZ DIN DOUT tDW Data valid tDH tCW tWC tAH tWR AC test conditions – – – – Output load: see Figure B. Input pulse level: GND to 30 V. See Figure A. Input rise and fall times: 3 ns. See Figure A. Input and output timing reference levels: 1.5 V. +5 V 480 Ω Thevenin equivalent: 168 Ω +3.0V GND 90% 10% 3 ns 90% 10% DOUT 255 Ω C13 DOUT +1.728 V Figure A: Input pulse GND Figure B: 5 V Output load Notes: 1 2 3 4 5 6 7 8 9 10 11 12 13 During VCC power-up, a pull-up resistor to VCC on CE is required to meet ISB specification. This parameter is sampled, but not 100% tested. For test conditions, see AC Test Conditions, Figures A and B. tCLZ and tCHZ are specified with CL = 5 pF, as in Figure B. Transition is measured ±200 mV from steady-state voltage. This parameter is guaranteed, but not 100% tested. WE is high for read cycle. CE and OE are low for read cycle. Address is valid prior to or coincident with CE transition low. All read cycle timings are referenced from the last valid address to the first transitioning address. N/A All write cycle timings are referenced from the last valid address to the first transitioning address. N/A. C = 30 pF, except all high Z and low Z parameters where C = 5 pF. 12/5/06, v. 1.0 Alliance Memory P. 6 of 9 AS7C1025C ® Package dimensions 32-pin SOJ 400 mil Symbol 32-pin SOJ 400 mil e D Min 0.132 0.025 0.105 0.026 0.015 0.007 0.820 0.354 0.395 0.435 Max 0.146 0.115 0.032 0.020 0.013 0.830 0.378 0.405 0.445 A A1 A2 B E1 E2 b c D A b Seating plane Pin 1 A1 c A2 E B E E1 E2 e 0.050 BSC Note: This part is compatible with both pin numbering conventions used by various manufacturers. 12/5/06, v. 1.0 Alliance Memory P. 7 of 9 AS7C1025C ® Ordering Codes Package Plastic SOJ, 400 mil Volt/Temp 5V industrial 12 ns AS7C1025C-12JIN Part numbering system AS7C SRAM prefix 1025C Device number –XX Access time X Package: J = SOJ 400 mil X X Temperature range N = LEAD FREE I = industrial, -40° PART C to 85° C 12/5/06, v. 1.0 Alliance Memory P. 8 of 9 AS7C1025C ® ® Alliance Memory, Inc. 1116 South Amphlett San Mateo, CA 94402 Tel: 650-525-3737 Fax: 650-525-0449 www.alliancememory.com Copyright © Alliance Memory All Rights Reserved Part Number: AS7C1025C Document Version: v. 1.0 © Copyright 2003 Alliance Memory, Inc. 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