AS7C31025B-20JCN

March 2004 ® AS7C31025B 3.3V 128K X 8 CMOS SRAM (Center power and ground) Features • Industrial and commercial temperatures • Organization: 131,072 x 8 bits • High speed - 10/12/15/20 ns address access time - 5, 6, 7, 8 ns output enable access time • Low power consumption: ACTIVE - 252 mW / max @ 10 ns • Low power consumption: STANDBY - 18 mW / max CMOS • 6 T 0.18 u CMOS technology • • • • Easy memory expansion with CE, OE inputs Center power and ground TTL/LVTTL-compatible, three-state I/O JEDEC-standard packages - 32-pin, 300 mil SOJ - 32-pin, 400 mil SOJ • ESD protection ≥ 2000 volts • Latch-up current ≥ 200 mA Pin arrangement Logic block diagram VCC GND Input buffer A0 A1 A2 A3 A4 A5 A6 A7 A8 I/O7 32-pin SOJ (300 mil) 32-pin SOJ (400 mil) A0 A1 A2 A3 CE I/O0 I/O1 VCC GND I/O2 I/O3 WE A4 A5 A6 A7 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 32 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17 A16 A15 A14 A13 OE I/O7 I/O6 GND VCC I/O5 I/O4 A12 A11 A10 A9 A8 Row decoder 512 x 256 x 8 Array (1,048,576) I/O0 WE OE CE Column decoder A9 A10 A11 A12 A13 A14 A15 A16 Control circuit Selection guide -10 Maximum address access time Maximum output enable access time Maximum operating current Maximum CMOS standby current 10 5 70 5 -12 12 6 65 5 -15 15 7 60 5 -20 20 8 55 5 Unit ns ns mA mA 3/24/04, v. 1.3 Alliance Semiconductor AS7C31025B Sense amp P. 1 of 9 Copyright © Alliance Semiconductor. All rights reserved. AS7C31025B ® Functional description The AS7C31025B is a high-performance CMOS 1,048,576-bit Static Random Access Memory (SRAM) device organized as 131,072 x 8 bits. It is designed for memory applications where fast data access, low power, and simple interfacing are desired. Equal address access and cycle times (tAA, tRC, tWC) of 10/12/15/20 ns with output enable access times (tOE) of 5, 6, 7, 8 ns are ideal for high-performance applications. The chip enable input CE permits easy memory and expansion with multiple-bank memory systems. When CE is high the device enters standby mode. A write cycle is accomplished by asserting write enable (WE) and chip enable (CE). Data on the input pins I/O0 through I/O7 is written on the rising edge of WE (write cycle 1) or CE (write cycle 2). To avoid bus contention, external devices should drive I/O pins only after outputs have been disabled with output enable (OE) or write enable (WE). A read cycle is accomplished by asserting output enable (OE) and chip enable (CE), with write enable (WE) high. The chip drives I/O pins with the data word referenced by the input address. When either chip enable or output enable is inactive or write enable is active, output drivers stay in high-impedance mode. All chip inputs and outputs are TTL-compatible, and operation is from a single 3.3 V supply. The AS7C31025B is packaged in common industry standard packages. Absolute maximum ratings Parameter Voltage on VCC relative to GND Voltage on any pin relative to GND Power dissipation Storage temperature (plastic) Ambient temperature with VCC applied DC current into outputs (low) Symbol Vt1 Vt2 PD Tstg Tbias IOUT Min –0.50 –0.50 – –65 –55 – Max +5.0 VCC + 0.5 1.0 +150 +125 20 Unit V V W o C oC mA NOTE: Stresses greater than those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions outside those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability. Truth table CE H L L L WE X H H L OE X H L X Data High Z High Z DOUT DIN Mode Standby (ISB, ISB1) Output disable (ICC) Read (ICC) Write (ICC) Key: X = don’t care, L = low, H = high. 3/24/04, v. 1.3 Alliance Semiconductor P. 2 of 9 AS7C31025B ® Recommended operating conditions Parameter Supply voltage Input voltage Ambient operating temperature VIL = -1.0V for pulse width less than 5ns VIH = VCC + 1.5V for pulse width less than 5ns Symbol VCC VIH VIL TA TA Min 3.0 2.0 –0.5 0 –40 Nominal 3.3 – – – – Max 3.6 VCC + 0.5 0.8 70 85 Unit V V V o C oC DC operating characteristics (over the operating range)1 -10 Parameter Input leakage current Output leakage current Operating power supply current -12 -15 -20 Sym | ILI | | ILO | Test conditions VCC = Max, VIN = GND to VCC VCC = Max, CE = VIH, Vout = GND to VCC VCC = Max CE ≤ VIL, f = fMax, IOUT = 0 mA VCC = Max CE ≥ VIH, f = fMax VCC = Max, CE ≥ VCC–0.2 V, VIN ≤ 0.2 V or VIN ≥ VCC –0.2 V, f=0 IOL = 8 mA, VCC = Min IOH = –4 mA, VCC = Min Min Max Min Max Min Max Min Max Unit – – 1 1 – – 1 1 – – 1 1 – – 1 1 µA µA ICC – 70 – 65 – 60 – 55 mA ISB Standby power supply current1 ISB1 VOL VOH – 30 – 25 – 20 – 20 mA – – 2.4 5 0.4 – – – 2.4 5 0.4 – – – 2.4 5 0.4 – – – 2.4 5 0.4 – mA V V Output voltage Capacitance (f = 1 MHz, Ta = 25o C, VCC = NOMINAL)2 Parameter Input capacitance I/O capacitance Symbol CIN CI/O Signals A, CE, WE, OE I/O Test conditions VIN = 0 V VIN = VOUT = 0 V Max 5 7 Unit pF pF 3/24/04, v. 1.3 Alliance Semiconductor P. 3 of 9 AS7C31025B ® Read cycle (over the operating range)3,9 -10 Parameter Read cycle time Address access time Chip enable (CE) access time Output enable (OE) access time Output hold from address change CE low to output in low Z CE high to output in high Z OE low to output in low Z OE high to output in high Z Power up time Power down time Symbol tRC tAA tACE tOE tOH tCLZ tCHZ tOLZ tOHZ tPU tPD Min 10 – – – 3 3 – 0 – 0 – Max – 10 10 5 – – 3 – 5 – 10 12 – – – 3 3 – 0 – 0 – -12 Min Max – 12 12 6 – – 3 – 6 – 12 15 – – – 3 3 – 0 – 0 – -15 Min Max – 15 15 7 – – 4 – 7 – 15 20 – – – 3 3 – 0 – 0 – -20 Min Max – 20 20 8 – – 5 – 8 – 20 Unit ns ns ns ns ns ns ns ns ns ns ns 5 4, 5 4, 5 4, 5 4, 5 4, 5 4, 5 3 3 Notes Key to switching waveforms Rising input Falling input Undefined/don’t care Read waveform 1 (address controlled)3,6,7,9 tRC Address DOUT tAA Data valid tOH Read waveform 2 (CE and OE controlled)3,6,8,9 CE tOE OE DOUT Supply current tACE tCLZ tPU Data valid tPD 50% 50% ICC ISB tOLZ tOHZ tCHZ tRC1 3/24/04, v. 1.3 Alliance Semiconductor P. 4 of 9 AS7C31025B ® Write cycle (over the operating range)11 -10 Parameter Write cycle time Chip enable (CE) to write end Address setup to write end Address setup time Write pulse width Write recovery time Address hold from end of write Data valid to write end Data hold time Write enable to output in high Z Output active from write end Symbol tWC tCW tAW tAS tWP tWR tAH tDW tDH tWZ tOW 10 8 8 0 7 0 0 5 0 – 1 – – – – – – – – – 5 – 12 9 9 0 8 0 0 6 0 – 1 -12 – – – – – – – – – 6 – 15 10 10 0 9 0 0 8 0 – 1 -15 – – – – – – – – – 7 – 20 12 12 0 12 0 0 10 0 – 1 -20 Unit ns ns ns ns ns ns ns ns ns ns ns 4, 5 4, 5 4, 5 Notes – – – – – – – – – 8 – Min Max Min Max Min Max Min Max Write waveform 1 (WE controlled)10,11 tWC tAW Address tWP WE tAS DIN tWZ DOUT tDW Data valid tOW tDH tWR tAH Write waveform 2 (CE controlled)10,11 tAW Address tAS CE WE tWZ DIN DOUT tWP tDW Data valid tDH tCW tWC tAH tWR 3/24/04, v. 1.3 Alliance Semiconductor P. 5 of 9 AS7C31025B ® AC test conditions – – – – Output load: see Figure B. Input pulse level: GND to 3.0 V. See Figure A. Input rise and fall times: 2 ns. See Figure A. Input and output timing reference levels: 1.5 V. Thevenin equivalent: 168 Ω DOUT +1.728 V +3.3 V 320 Ω +3.0 V GND 90% 10% 2 ns 90% 10% DOUT 255 Ω C13 Figure A: Input pulse GND Figure B: 3.3 V Output load Notes 1 2 3 4 5 6 7 8 9 10 11 12 13 During VCC power-up, a pull-up resistor to VCC on CE is required to meet ISB specification. This parameter is sampled, but not 100% tested. For test conditions, see AC Test Conditions, Figures A and B. tCLZ and tCHZ are specified with CL = 5 pF, as in Figure B. Transition is measured ±500 mV from steady-state voltage. This parameter is guaranteed, but not 100% tested. WE is high for read cycle. CE and OE are low for read cycle. Address is valid prior to or coincident with CE transition low. All read cycle timings are referenced from the last valid address to the first transitioning address. N/A All write cycle timings are referenced from the last valid address to the first transitioning address. N/A. C = 30 pF, except all high Z and low Z parameters where C = 5 pF. 3/24/04, v. 1.3 Alliance Semiconductor P. 6 of 9 AS7C31025B ® Package dimensions 32-pin SOJ 300 mil/400 mil e D E1 E2 Pin 1 A1 c A2 E B A b Seating plane 32-pin SOJ 300 mil Symbol A A1 A2 B b c D E E1 E2 e Min 0.128 0.025 0.095 0.026 0.016 0.007 0.820 0.255 0.295 0.330 Max 0.145 0.105 0.032 0.020 0.010 0.830 0.275 0.305 0.340 32-pin SOJ 400 mil Min 0.132 0.025 0.105 0.026 0.015 0.007 0.820 0.354 0.395 0.435 Max 0.146 0.115 0.032 0.020 0.013 0.830 0.378 0.405 0.445 0.050 BSC 0.050 BSC 3/24/04, v. 1.3 Alliance Semiconductor P. 7 of 9 AS7C31025B ® Ordering Codes Package \ Access time 300-mil SOJ 400-mil SOJ Temperature Commercial Industrial Commercial Industrial 10 ns AS7C31025B-10TJC AS7C31025B-10TJI AS7C31025B-10JC AS7C31025B-10JI 12 ns AS7C31025B-12TJC AS7C31025B-12TJI AS7C31025B-12JC AS7C31025B-12JI 15 ns AS7C31025B-15TJC AS7C31025B-15TJI AS7C31025B-15JC AS7C31025B-15JI 20 ns AS7C31025B-20TJC AS7C31025B-20TJI AS7C31025B-20JC AS7C31025B-0JI Note: Add suffix ‘N’ to the above part number for lead free parts (Ex. AS7C31025B-10TJCN) Part numbering system AS7C SRAM prefix X Voltage: 3 = 3.3 V CMOS 1025B Device number –XX Access time X X X N=Lead Free Part Package: Temperature range TJ = SOJ 300 mil C = commercial, 0° C to 70° C J = SOJ 400 mil I = industrial, -40° C to 85° C 3/24/04, v. 1.3 Alliance Semiconductor P. 8 of 9 AS7C31025B ® ® Alliance Semiconductor Corporation 2575, Augustine Drive, Santa Clara, CA 95054 Tel: 408 - 855 - 4900 Fax: 408 - 855 - 4999 www.alsc.com Copyright © Alliance Semiconductor All Rights Reserved Part Number: AS7C31025B Document Version: v. 1.3 © Copyright 2003 Alliance Semiconductor Corporation. All rights reserved. Our three-point logo, our name and Intelliwatt are trademarks or registered trademarks of Alliance. All other brand and product names may be the trademarks of their respective companies. Alliance reserves the right to make changes to this document and its products at any time without notice. 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