AS7C33256NTD18B-200TQCN

February 2005 ® AS7C33256NTD18B 3.3V 256K×18 Pipelined SRAM with NTDTM Features • Organization: 262,144 words × 18 bits • NTD™ architecture for efficient bus operation • Fast clock speeds to 200 MHz • Fast clock to data access: 3.0/3.5/4.0 ns • Fast OE access time: 3.0/3.5/4.0 ns • Fully synchronous operation • Asynchronous output enable control • Available in 100-pin TQFP package • Byte write enables • Clock enable for operation hold Logic block diagram A[17:0] 18 D • Multiple chip enables for easy expansion • 3.3V core power supply • 2.5V or 3.3V I/O operation with separate VDDQ • Self-timed write cycles • Interleaved or linear burst modes • Snooze mode for standby operation Address register Burst logic Q 18 CLK CE0 CE1 CE2 R/W BWa BWb ADV / LD LBO ZZ DQ [a:b] 18 Write delay addr. registers CLK D Q 18 Control logic CLK CLK Write Buffer 256K x 18 SRAM Array D Data Q Input Register CLK 18 18 18 18 CLK CEN CLK OE Output Register 18 OE DQ [a:b] Selection Guide -200 Minimum cycle time Maximum clock frequency Maximum clock access time Maximum operating current Maximum standby current Maximum CMOS standby current (DC) 5 200 3.0 375 135 30 -166 6 166 3.5 350 120 -133 7.5 133 4 325 110 Units ns MHz ns mA mA mA 30 30 2/8/05; v.1.5 Alliance Semiconductor P. 1 of 18 Copyright © Alliance Semiconductor. All rights reserved. AS7C33256NTD18B ® 4 Mb Synchronous SRAM products list1,2 Org 256KX18 128KX32 128KX36 256KX18 128KX32 128KX36 256KX18 128KX32 128KX36 256KX18 128KX32 128KX36 256KX18 128KX32 128KX36 Part Number AS7C33256PFS18B AS7C33128PFS32B AS7C33128PFS36B AS7C33256PFD18B AS7C33128PFD32B AS7C33128PFD36B AS7C33256FT18B AS7C33128FT32B AS7C33128FT36B AS7C33256NTD18B AS7C33128NTD32B AS7C33128NTD36B AS7C33256NTF18B AS7C33128NTF32B AS7C33128NTF36B Mode PL-SCD PL-SCD PL-SCD PL-DCD PL-DCD PL-DCD FT FT FT NTD-PL NTD-PL NTD-PL NTD-FT NTD-FT NTD-FT Speed 200/166/133 MHz 200/166/133 MHz 200/166/133 MHz 200/166/133 MHz 200/166/133 MHz 200/166/133 MHz 6.5/7.5/8.0/10 ns 6.5/7.5/8.0/10 ns 6.5/7.5/8.0/10 ns 200/166/133 MHz 200/166/133 MHz 200/166/133 MHz 6.5/7.5/8.0/10 ns 6.5/7.5/8.0/10 ns 6.5/7.5/8.0/10 ns 1 Core Power Supply: VDD = 3.3V + 0.165V 2 I/O Supply Voltage: VDDQ = 3.3V + 0.165V for 3.3V I/O VDDQ = 2.5V + 0.125V for 2.5V I/O PL-SCD PL-DCD FT NTD1-PL NTD-FT : : : : : Pipelined Burst Synchronous SRAM - Single Cycle Deselect Pipelined Burst Synchronous SRAM - Double Cycle Deselect Flow-through Burst Synchronous SRAM Pipelined Burst Synchronous SRAM with NTDTM Flow-through Burst Synchronous SRAM with NTDTM 1NTD: No Turnaround Delay. NTDTM is a trademark of Alliance Semiconductor Corporation. All trademarks mentioned in this document are the property of their respective owners. 2/8/05; v.1.5 Alliance Semiconductor P. 2 of 18 AS7C33256NTD18B ® Pin arrangement for TQFP (top view) 100 99 98 97 96 95 94 93 92 91 90 89 88 87 86 85 84 83 82 81 A A CE0 CE1 NC NC BWb BWa CE2 VDD VSS CLK R/W CEN OE ADV/LD NC NC A A VDDQ VSSQ NC NC DQb0 DQb1 VSSQ VDDQ DQb2 DQb3 NC VDD NC VSS DQb4 DQb5 VDDQ VSSQ DQb6 DQb7 DQPb NC VSSQ VDDQ NC NC NC NC NC NC 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 TQFP 14x20mm 80 79 78 77 76 75 74 73 72 71 70 69 68 67 66 65 64 63 62 61 60 59 58 57 56 55 54 53 52 51 A NC NC VDDQ VSSQ NC DQPa DQa7 DQa6 VSSQ VDDQ DQa5 DQa4 VSS NC VDD ZZ DQa3 DQa2 VDDQ VSSQ DQa1 DQa0 NC NC VSSQ VDDQ NC NC NC 2/8/05; v.1.5 LBO A A A A A1 A0 NC NC VSS VDD NC NC A A A A A A A Alliance Semiconductor 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 P. 3 of 18 AS7C33256NTD18B ® Functional description The AS7C33256NTD18B family is a high performance CMOS 4 Mbit synchronous Static Random Access Memory (SRAM) organized as 262,144 words × 18 bits and incorporates a LATE LATE Write. This variation of the 4Mb sychronous SRAM uses the No Turnaround Delay (NTD™) architecture, featuring an enhanced Write operation that improves bandwidth over pipeline burst devices. In a normal pipeline burst device, the write data, command, and address are all applied to the device on the same clock edge. If a Read command follows this Write command, the system must wait for two 'dead' cycles for valid data to become available. These dead cycles can significantly reduce overall bandwidth for applications requiring random access or Read-Modify-Write operations. NTD™ devices use the memory bus more efficiently by introducing a write 'latency' which matches the two (one)cycle pipeline (flowthrough) read latency. Write data is applied two cycles after the Write command and address, allowing the Read pipeline to clear. With NTD™, Write and Read operations can be used in any order without producing dead bus cycles. Assert R/W low to perform Write cycles. Byte Write enable controls write access to specific bytes, or can be tied low for full 18 bit writes. Write enable signals, along with the write address, are registered on a rising edge of the clock. Write data is applied to the device two clock cycles later. Unlike some asynchronous SRAMs, output enable OE does not need to be toggled for write operations; it can be tied low for normal operations. Outputs go to a high impedance state when the device is deselected by any of the three chip enable inputs (refer to Synchronous truth table on page 6). In pipeline mode, a two cycle deselect latency allows pending read or write operations to be completed. Use the ADV (burst advance) input to perform burst read, write and deselect operations. When ADV is high, external addresses, chip select, R/W pins are ignored, and internal address counters increment in the count sequence specified by the LBO control. Any device operations, including burst, can be stalled using the CEN=1 the clock enable input. The AS7C33256NTD18B operates with a 3.3V ± 5% power supply for the device core (VDD). DQ circuits use a separate power supply (VDDQ) that operates across 3.3V or 2.5V ranges. These devices are available in a 100-pin 14×20 mm TQFP package. TQFP Capacitance Parameter Input capacitance I/O capacitance *Guranteed not tested Symbol CIN* CI/O* Test conditions Vin = 0V Vin = Vout = 0V Min - Max 5 7 Unit pF pF TQFP thermal resistance Description Thermal resistance (junction to ambient)1 Thermal resistance (junction to top of case)1 1 This parameter is sampled Conditions 1–layer Test conditions follow standard test methods and procedures for measuring thermal impedance, per EIA/JESD51 4–layer Symbol θJA θJA θJC Typical 40 22 8 Units °C/W °C/W °C/W 2/8/05; v.1.5 Alliance Semiconductor P. 4 of 18 AS7C33256NTD18B ® Signal descriptions Signal CLK CEN A, A0, A1 DQ[a,b] CE0, CE1, CE2 ADV/LD R/W BW[a,b] OE LBO ZZ NC I/O Properties Description I I I I/O I I I I I I I CLOCK SYNC SYNC SYNC SYNC SYNC SYNC SYNC ASYNC STATIC ASYNC Clock. All inputs except OE, LBO, and ZZ are synchronous to this clock. Clock enable. When de-asserted HIGH, the clock input signal is masked. Address. Sampled when all chip enables are active and ADV/LD is asserted. Data. Driven as output when the chip is enabled and OE is active. Synchronous chip enables. Sampled at the rising edge of CLK, when ADV/LD is asserted. Are ignored when ADV/LD is HIGH. Advance or Load. When sampled HIGH, the internal burst address counter will increment in the order defined by the LBO input value. When LOW, a new address is loaded. A HIGH during LOAD initiates a READ operation. A LOW during LOAD initiates a WRITE operation. Is ignored when ADV/LD is HIGH. Byte write enables. Used to control write on individual bytes. Sampled along with WRITE command and BURST WRITE. Asynchronous output enable. I/O pins are not driven when OE is inactive. Selects Burst mode. When tied to VDD or left floating, device follows interleaved Burst order. When driven Low, device follows linear Burst order. This signal is internally pulled High. Snooze. Places device in low power mode; data is retained. Connect to GND if unused. No connects. Snooze Mode SNOOZE MODE is a low current, power-down mode in which the device is deselected and current is reduced to ISB2. The duration of SNOOZE MODE is dictated by the length of time the ZZ is in a High state. The ZZ pin is an asynchronous, active high input that causes the device to enter SNOOZE MODE. When the ZZ pin becomes a logic High, ISB2 is guaranteed after the time tZZI is met. After entering SNOOZE MODE, all inputs except ZZ is disabled and all outputs go to High-Z. Any operation pending when entering SNOOZE MODE is not guaranteed to successfully complete. Therefore, SNOOZE MODE (READ or WRITE) must not be initiated until valid pending operations are completed. Similarly, when exiting SNOOZE MODE during tPUS, only a DESELECT or READ cycle should be given while the SRAM is transitioning out of SNOOZE MODE. Burst order Interleaved burst order (LBO = 1) A1 A0 Starting address First increment Second increment Third increment 00 01 10 11 A1 A0 01 00 11 10 A1 A0 10 11 00 01 A1 A0 11 10 01 00 Starting Address First increment Second increment Third increment Linear burst order (LBO = 0) A1 A0 00 01 10 11 A1 A0 01 10 11 00 A1 A0 10 11 00 01 A1 A0 11 00 01 10 2/8/05; v.1.5 Alliance Semiconductor P. 5 of 18 AS7C33256NTD18B ® Synchronous truth table[5,6,7,8,9,11] CE0 CE1 CE2 ADV/LD R/W BWn OE CEN Address source CLK Operation DQ Notes H X X X L X L X L X L X X X X L X H X H X H X H X X X H X X L X L X L X L X X L L L H L H L H L H L H X X X X X H X H X L X L X X X X X X X X X X L L H H X X X X X L L H H X X X X X L L L L L L L L L L L L H NA NA NA NA Next Next Next L to H L to H L to H L to H L to H L to H L to H DESELECT Cycle DESELECT Cycle DESELECT Cycle CONTINUE DESELECT Cycle READ Cycle (Begin Burst) READ Cycle (Continue Burst) DUMMY READ (Continue Burst) WRITE CYCLE (Begin Burst) WRITE CYCLE (Continue Burst) High-Z High-Z High-Z High-Z Q Q 1,10 2 3 1,3,10 2,3 1,2,3, 10 4 1 External L to H External L to H NOP/DUMMY READ (Begin Burst) High-Z External L to H D D High-Z High-Z - High-Z 1,2,10 External L to H NOP/WRITE ABORT (Begin Burst) Next L to H WRITE ABORT (Continue Burst) INHIBIT CLOCK Current L to H Key: X = Don’t Care, H = HIGH, L = LOW. BWn = H means all byte write signals (BWa and BWb) are HIGH. BWn = L means one or more byte write signals are LOW. Notes: 1 CONTINUE BURST cycles, whether READ or WRITE, use the same control inputs. The type of cycle performed (READ or WRITE) is chose in the initial BEGIN BURST cycle. A CONINUE DESELECT cycle can only be entered if a DESELECT CYCLE is executed first. 2 DUMMY READ and WRITE ABORT cycles can be considered NOPs because the device performs no external operation. A WRITE ABORT means a WRITE command is given, but no operation is performed. 3 OE may be wired LOW to minimize the number of control signal to the SRAM. The device will automatically turn off the output drivers during a WRITE cycle. OE may be used when the bus turn-on and turn-off times do not meet an application’s requirements. 4 If an INHIBIT CLOCK command occurs during a READ operation, the DQ bus will remain active (Low-Z). If it occurs during a WRITE cycle, the bus will remain in High-Z. No WRITE operations will be performed during the INHIBIT CLOCK cycle. 5 BWa enables WRITEs to byte “a” (DQa pins); BWb enables WRITEs to byte “b” (DQb pins). 6 All inputs except OE and ZZ must meet setup and hold times around the rising edge (LOW to HIGH) of CLK. 7 Wait states are inserted by setting CEN HIGH. 8 This device contains circuitry that will ensure that the outputs will be in High-Z during power-up. 9 The device incorporates a 2-bit burst counter. Address wraps to the initial address every fourth BURST CYCLE. 10 The address counter is incremented for all CONTINUE BURST cycles. 11 ZZ pin is always Low. 2/8/05; v.1.5 Alliance Semiconductor P. 6 of 18 AS7C33256NTD18B ® State diagram for NTD SRAM Read Read Burst Read Dse l Rea d Burs Dsel Burst Dsel ad Re W rit e Read Write Writ Write Dsel l Dse Burst ite Wr Burst Burst Dsel Burst Write Absolute maximum ratings Parameter Power supply voltage relative to GND Input voltage relative to GND (input pins) Input voltage relative to GND (I/O pins) Power dissipation Short circuit output current Storage temperature Temperature under bias Symbol VDD, VDDQ VIN VIN Pd IOUT Tstg Tbias Min –0.5 –0.5 –0.5 – – –65 –65 Max +4.6 VDD + 0.5 VDDQ + 0.5 1.8 20 +150 +135 Unit V V V W mA oC oC Stresses greater than those listed under “Absolute maximum ratings” may cause permanent damage to the device. This is a stress rating only, and functional operation of the device at these or any other conditions outside those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions may affect reliability. Recommended operating conditions at 3.3V I/O Parameter Supply voltage for inputs Supply voltage for I/O Ground supply Symbol VDD VDDQ Vss Min 3.135 3.135 0 Nominal 3.3 3.3 0 Max 3.465 3.465 0 Unit V V V Recommended operating conditions at 2.5V I/O Parameter Supply voltage for inputs Supply voltage for I/O Ground supply Symbol VDD VDDQ Vss Min 3.135 2.375 0 Nominal 3.3 2.5 0 Max 3.465 2.625 0 Unit V V V 2/8/05; v.1.5 Alliance Semiconductor P. 7 of 18 AS7C33256NTD18B ® DC electrical characteristics for 3.3V I/O operation Parameter Input leakage current† Sym |ILI| |ILO| VIH VIL VOH VOL Conditions VDD = Max, 0V < VIN < VDD OE ≥ VIH, VDD = Max, 0V < VOUT < VDDQ Address and control pins I/O pins Address and control pins I/O pins IOH = –4 mA, VDDQ = 3.135V IOL = 8 mA, VDDQ = 3.465V Min -2 -2 2* 2* -0.3** -0.5** 2.4 – Max 2 2 VDD+0.3 VDDQ+0.3 0.8 0.8 – 0.4 Unit µA µA V Output leakage current Input high (logic 1) voltage Input low (logic 0) voltage Output high voltage Output low voltage V V V DC electrical characteristics for 2.5V I/O operation Parameter Input leakage current† Output leakage current Input high (logic 1) voltage Sym |ILI| |ILO| VIH VIL VOH VOL Conditions VDD = Max, 0V < VIN < VDD OE ≥ VIH, VDD = Max, 0V < VOUT < VDDQ Address and control pins I/O pins Address and control pins I/O pins IOH = –4 mA, VDDQ = 2.375V IOL = 8 mA, VDDQ = 2.625V Min -2 -2 1.7* 1.7* -0.3** -0.3** 1.7 – Max 2 2 VDD+0.3 VDDQ+0.3 0.7 0.7 – 0.7 Unit µA µA V V V V V V Input low (logic 0) voltage Output high voltage Output low voltage † LBO and ZZ pins have an internal pull-up or pull-down, and input leakage = ±10 µA. * VIH max < VDD +1.5V for pulse width less than 0.2 X tCYC **V IL min = -1.5 for pulse width less than 0.2 X tCYC IDD operating conditions and maximum limits Parameter Operating power supply current1 Sym ICC ISB Standby power supply current ISB1 ISB2 Test conditions CE0 < VIL, CE1 > VIH, CE2 < VIL, f = fMax, IOUT = 0 mA, ZZ < VIL All VIN ≤ 0.2V or > VDD – 0.2V, Deselected, f = fMax, ZZ < VIL Deselected, f = 0, ZZ < 0.2V, all VIN ≤ 0.2V or ≥ VDD – 0.2V Deselected, f = fMax, ZZ ≥ VDD – 0.2V, all VIN ≤ VIL or ≥ VIH -200 375 135 30 30 -166 350 120 30 30 -133 325 110 30 30 Unit mA mA 1 ICC given with no output loading. ICC increases with faster cycle times and greater output loading. 2/8/05; v.1.5 Alliance Semiconductor P. 8 of 18 AS7C33256NTD18B ® Timing characteristics over operating range -200 Parameter Clock frequency Cycle time Clock access time Output enable Low to data valid Clock High to output Low Z Data output invalid from clock High Output enable Low to output Low Z Output enable High to output High Z Clock High to output High Z Clock High to output High Z Clock High pulse width Clock Low pulse width Address setup to clock High Data setup to clock High Write setup to clock High Chip select setup to clock High Clock enable setup to clock High ADV/LD setup to clock High -166 Min 6 0 1.5 0 2.4 2.4 1.5 1.5 1.5 1.5 1.5 1.5 0.5 0.5 0.5 0.5 0.5 0.5 Max 166 3.5 3.5 3.5 3.5 1.5 - -133 Min 7.5 0 1.5 0 2.5 2.5 1.5 1.5 1.5 1.5 1.5 1.5 0.5 0.5 0.5 0.5 0.5 0.5 Max 133 4.0 4.0 4.0 4.0 2.0 Unit MHz ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns 2,3,4 4 2,3,4 2,3,4 2,3,4 5 6 6 7 7 7 7 7 7 7 7 7 7 7 7 Notes1 Sym fMAX tCYC tCD tOE tLZC tOH tLZOE tHZOE tHZC tHZCN tCH tCL tAS tDS tWS tCSS tCENS tADVS tAH tDH tWH tADVH tCENH tCSH Min – 5 – – 0 1.5 0 – – – 2.0 2.3 1.4 1.4 1.4 1.4 1.4 1.4 0.4 0.4 0.4 0.4 0.4 0.4 Max 200 – 3.0 3.0 – – – 3.0 3.0 1.5 – – – – – – – – – – – – – – Address hold from clock High Data hold from clock High Write hold from clock High ADV/LD hold from clock High Clock enable hold from clock High Chip select hold from clock High 1 See “Notes” on page 15. Snooze Mode Electrical Characteristics Description Conditions Symbol Min Max Units Current during Snooze Mode ZZ active to input ignored ZZ inactive to input sampled ZZ active to SNOOZE current ZZ inactive to exit SNOOZE current ZZ > VIH ISB2 tPDS tPUS tZZI tRZZI 30 2 2 2 0 mA cycle cycle cycle cycle 2/8/05; v.1.5 Alliance Semiconductor P. 9 of 18 AS7C33256NTD18B ® Key to switching waveforms Rising input Falling input don’t care Undefined Timing waveform of read cycle tCH CLK tCES tCEH tCL tCYC CEN tAS Address A1 tAH A2 A3 tWS tWH R/W tWS tWH BWn tCSH CE0,CE2 CE1 tADVS tADVH ADV/LD OE tOE Dout tLZOE tHZOE Q(A1) Q(A2) Q(A2Y‘01) Read Q(A1) DSEL Read Q(A2) Continue Read Q(A2Y‘01) Continue Read Q(A2Y‘10) Continue Read Q(A2Y‘11) Inhibit Clock Q(A2Y‘10) Q(A2Y‘11) Read Q(A3) Continue Read Q(A3Y‘01) Q(A3) tHLZC 2/8/05; v.1.5 Alliance Semiconductor P. 10 of 18 AS7C33256NTD18B ® Timing waveform of write cycle tCH CLK tCES tCEH tCL tCYC CEN tAS Address A1 tAH A2 A3 R/W BWn tCSH CE0,CE2 CE1 tADVS tADVH ADV/LD OE tDS Din tHZOE Dout Q(n-2) Q(n-1) tDH D(A3) D(A1) D(A2) D(A2Y‘01) D(A2Y‘10) D(A2Y‘11) Write D(A1) DSEL Write D(A2) Continue Write D(A2Y‘01) Continue Write D(A2Y‘10) Continue Write D(A2Y‘11) Inhibit Clock Write D(A3) Continue Write D(A3Y‘01) 2/8/05; v.1.5 Alliance Semiconductor P. 11 of 18 AS7C33256NTD18B ® Timing waveform of read/write cycle tCH CLK tCENS CEN tCL tCYC tCENH CE1 tCSS CE0, CE2 tADVS ADV/LD tWS R/W tWS BWn tAS ADDRESS A1 tCSH tADVH tWH tWH tAH A2 A3 A4 A5 A6 A7 tCD tDS tDH D/Q D(A1) D(A2) tLZC D(A2Ý01) tOH Q(A3) Q(A4) tOE tHZC Q(A4Ý01) D(A5) Q(A6) tHZOE tLZOE OE Command Write D(A1) Write D(A2) Burst Write D(A2Ý01) Read Q(A3) Read Q(A4) Burst Read Q(A4Ý01) Write D(A5) Read Q(A6) Write D(A7) DSEL Note: Ý = XOR when LBO = high/no connect. Ý = ADD when LBO = low. BW[a:d] is don’t care. 2/8/05; v.1.5 Alliance Semiconductor P. 12 of 18 AS7C33256NTD18B ® NOP, stall and deselect cycles CLK CEN CE1 CE0, CE2 ADV/LD R/W BWn Address A1 A2 A3 D/Q Q(A1) Q(A1Ý01) Q(A1Ý10) D(A2) Command Read Q(A1) Burst Q(A1Ý01) STALL Burst Q(A1Ý10) DSEL Burst DSEL Write D(A2) Burst NOP D(A2Ý01) Burst D(A2Ý10) Write NOP D(A3) Note: Ý = XOR when LBO = high/no connect; Ý = ADD when LBO = low. OE is low. 2/8/05; v.1.5 Alliance Semiconductor P. 13 of 18 AS7C33256NTD18B ® Timing waveform of snooze mode CLK tPUS ZZ setup cycle ZZ tZZI ZZ recovery cycle Isupply ISB2 tRZZI All inputs (except ZZ) Deselect or Read Only Deselect or Read Only Normal operation Cycle Dout High-Z 2/8/05; v.1.5 Alliance Semiconductor P. 14 of 18 AS7C33256NTD18B ® AC test conditions • • • • Output Load: see Figure B, except for tLZC, tLZOE, tHZOE, tHZC see Figure C. Input pulse level: GND to 3V. See Figure A. Input rise and fall time (Measured at 0.3V and 2.7V): 2 ns. See Figure A. Input and output timing reference levels: 1.5V. Z0=50Ω 50Ω VL=1.5V 30 pF* Thevenin equivalent: +3.3V for 3.3V I/O; /+2.5V for 2.5V I/O DOUT 353Ω / 1538Ω 319Ω / 1667Ω 5 pF* GND *including scope and jig capacitance +3.0V 90% 10% GND 90% 10% Dout Figure A: Input waveform Figure B: Output load (A) Figure C: Output load (B) Notes: 6 1 For test conditions, see AC Test Conditions, Figures A, B, C. 2 This parameter measured with output load condition in Figure C 7 3 This parameter is sampled and not 100% tested. 4 tHZOE is less than tLZOE; and tHZC is less than tLZC at any given temperature and voltage. 5 tHZCN is a‘no load’ parameter to indicate exactly when SRAM outputs have stopped driving. tCH measured as HIGH above VIH, and tCL measured as LOW below VIL This is a synchronous device. All addresses must meet the specified setup and hold times for all rising edges of CLK. All other synchronous inputs must meet the setup and hold times with stable logic levels for all rising edges of CLK when chip is enabled. 2/8/05; v.1.5 Alliance Semiconductor P. 15 of 18 AS7C33256NTD18B ® Package Dimensions: 100-pin quad flat pack (TQFP) Hd A1 A2 b c D E e Hd He L L1 a TQFP Min Max 0.05 0.15 1.35 1.45 0.22 0.38 0.09 0.20 13.90 14.10 19.90 20.10 0.65 nominal 15.90 16.10 21.90 22.10 0.45 0.75 1.00 nominal 0° 7° Dimensions in millimeters c L1 L D b e He E α A1 A2 2/8/05; v.1.5 Alliance Semiconductor P. 16 of 18 AS7C33256NTD18B ® Ordering information Package TQFP TQFP Width ×18 ×18 -200 AS7C33256NTD18B-200TQC AS7C33256NTD18B-200TQI -166 AS7C33256NTD18B-166TQC AS7C33256NTD18B-166TQI -133 AS7C33256NTD18B-133TQC AS7C33256NTD18B-133TQI Note: Add suffix ‘N’ to the above part numbers for lead free parts (Ex AS7C33256NTD18B-166TQCN) Part numbering guide AS7C 1 33 2 256 3 NTD 4 18 5 B 6 –XXX 7 TQ 8 C/I 9 X 10 1.Alliance Semiconductor SRAM prefix 2.Operating voltage: 33=3.3V 3.Organization: 256=256K 4.NTDTM=No Turn-around Delay, Pipelined mode. 5.Organization: 18=x18 6.Production version: B = Product revision 7.Clock speed (MHz) 8.Package type: TQ=TQFP 9.Operating temperature: C=Commercial (0° C to 70° C); I=Industrial (-40° C to 85° C) 10. N = Lead Free Part 2/8/05; v.1.5 Alliance Semiconductor P. 17 of 18 AS7C33256NTD18B ® ® Alliance Semiconductor Corporation 2575, Augustine Drive, Santa Clara, CA 95054 Tel: 408 - 855 - 4900 Fax: 408 - 855 - 4999 www.alsc.com Copyright © Alliance Semiconductor All Rights Reserved Part Number: AS7C33256NTD18B Document Version: v.1.5 © Copyright 2003 Alliance Semiconductor Corporation. All rights reserved. Our three-point logo, our name and Intelliwatt are trademarks or registered trademarks of Alliance. All other brand and product names may be the trademarks of their respective companies. Alliance reserves the right to make changes to this document and its products at any time without notice. Alliance assumes no responsibility for any errors that may appear in this document. The data contained herein represents Alliance's best data and/or estimates at the time of issuance. Alliance reserves the right to change or correct this data at any time, without notice. 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