AS7C34096B-10TIN
AS7C34096B-10BIN
Revision History
AS7C34096B 512K X 8 BIT HIGH SPEED CMOS SRAM
Revision
Rev 1.0
Rev 1.1
Details
Initial Issue
Added 6mm x 8mm TFBGA Package
Confidential
Date
Aug. 2016
Sep. 2017
1/11
Rev 1.1 Sep 2017
AS7C34096B-10TIN
AS7C34096B-10BIN
GENERAL DESCRIPTION
FEATURES
The AS7C34096B is a 4,194,304-bit high speed
CMOS static random access memory organized as
524,288 words by 8 bits. It is fabricated using very
high performance, high reliability CMOS technology.
Its standby current is stable within the range of
operating temperature.
Fast access time : 10ns
Low power consumption:
Operating current:
40mA(TYP.)
Standby current:
2mA(TYP.)
Single 3.3V power supply
All inputs and outputs TTL compatible
Fully static operation
Tri-state output
The AS7C34096B operates from a single power
supply of 3.3V and all inputs and outputs are fully
TTL compatible
Data retention voltage : 1.5V (MIN.)
Package : 44-pin 400 mil TSOP-II
36-ball 6mm x 8mm TFBGA
Table 1. Ordering Information
Speed
Part Number
Temperature
Vcc Range
Package
AS7C34096B-10TIN
10ns
Industrial -40°C to +85°C
2.7 ~ 3.6V
44pin TSOPII
AS7C34096B-10BIN
10ns
Industrial -40°C to +85°C
2.7 ~ 3.6V
36ball FBGA
FUNCTIONAL BLOCK DIAGRAM
PIN DESCRIPTION
SYMBOL
A0 - A18
DQ0 – D7
CE#
WE#
OE#
VCC
VSS
NC
Vcc
Vss
A0-A18
DECODER
512Kx8
MEMORY ARRAY
DQ0-DQ7
I/O DATA
CIRCUIT
COLUMN I/O
CE#
WE#
OE#
CONTROL
CIRCUIT
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DESCRIPTION
Address Inputs
Data Inputs/Outputs
Chip Enable Inputs
Write Enable Input
Output Enable Input
Power Supply
Ground
No Connection
Rev 1.1 Sep 2017
AS7C34096B-10TIN
AS7C34096B-10BIN
PIN CONFIGURATION
NC
1
44
NC
NC
2
43
NC
A4
3
42
NC
A3
4
41
A5
5
40
A6
6
39
A7
A0
7
38
A8
CE#
8
37
OE#
DQ0
9
36
DQ7
DQ1
10
35
DQ6
Vcc
11
34
Vss
Vss
12
33
Vcc
DQ2
13
32
DQ5
DQ3
14
31
DQ4
WE#
15
A18
16
A17
17
A16
18
A15
19
A14
AS7C34096B-10TIN
A2
A1
30
A9
29
A10
28
A11
27
A12
26
A13
20
25
NC
NC
21
24
NC
NC
22
23
NC
TSOP II
AS7C34096B-10BIN
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Rev 1.1 Sep 2017
AS7C34096B-10TIN
AS7C34096B-10BIN
ABSOLUTE MAXIMUM RATINGS*
PARAMETER
Voltage on VCC relative to VSS
Voltage on any other pin relative to VSS
Operating Temperature
Storage Temperature
Power Dissipation
DC Output Current
SYMBOL
VT1
VT2
TA
TSTG
PD
IOUT
RATING
-0.5 to 4.6
-0.5 to VCC+0.5
-40 to 85
-65 to 150
1
50
UNIT
V
V
℃
℃
W
mA
*Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating
only and functional operation of the device or any other conditions above those indicated in the operational sections of this specification is
not implied. Exposure to the absolute maximum rating conditions for extended period may affect device reliability.
TRUTH TABLE
MODE
Standby
Output Disable
Read
Write
Note:
CE#
H
L
L
L
OE#
X
H
L
X
WE#
X
H
H
L
SUPPLY CURRENT
ISB,ISB1
ICC,ICC1
ICC,ICC1
ICC,ICC1
I/O OPERATION
High-Z
High-Z
DOUT
DIN
H = VIH, L = VIL, X = Don't care.
DC ELECTRICAL CHARACTERISTICS
PARAMETER
SYMBOL
TEST CONDITION
MIN.
TYP. *4
MAX.
UNIT
Supply Voltage
VCC
2.7
3.3
3.6
V
Input High Voltage
Input Low Voltage
Input Leakage Current
Output Leakage
Current
Output High Voltage
Output Low Voltage
VIH*1
VIL*2
ILI
2.2
- 0.3
-1
-
VCC+0.3
0.8
1
V
V
µA
-1
-
1
µA
2.4
-
-
0.4
V
V
-
50
70
mA
-
40
55
mA
-
-
30
mA
-
2
10
mA
ILO
VOH
VOL
ICC
Average Operating
Power Supply Current
ICC1
Standby Power
Supply Current
ISB
ISB1
VCC ≧ VIN ≧ VSS
VCC ≧ VOUT ≧ VSS,
Output Disabled
IOH = -4mA
IOL = 8mA
Cycle time = Min.
CE# = VIL, II/O = 0mA,
Others at VIL or VIH
CE# ≦0.2,
Others at 0.2V or Vcc-0.2V
II/O = 0mA;f=max
CE# =VIH, Others at VIL or VIH
CE# ≧VCC - 0.2V,
Others at 0.2V or VCC - 0.2V
Notes:
1. VIH(max) = VCC + 2.0V for pulse width less than 6ns.
2. VIL(min) = VSS - 2.0V for pulse width less than 6ns.
3. Over/Undershoot specifications are characterized on engineering evaluation stage, not for mass production test.
4. Typical values are included for reference only and are not guaranteed or tested.
Typical valued are measured at VCC = VCC(TYP.) and TA = 25℃
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Rev 1.1 Sep 2017
AS7C34096B-10TIN
AS7C34096B-10BIN
CAPACITANCE (TA = 25℃, f = 1.0MHz)
PARAMETER
Input Capacitance
Input/Output Capacitance
SYMBOL
CIN
CI/O
MIN.
-
MAX
8
10
UNIT
pF
pF
Note : These parameters are guaranteed by device characterization, but not production tested.
AC TEST CONDITIONS
Speed
Input Pulse Levels
Input Rise and Fall Times
Input and Output Timing Reference Levels
Output Load
10ns
0.2V to VCC - 0.2V
3ns
1.5V
CL = 30pF + 1TTL, IOH/IOL = -4mA/8mA
AC ELECTRICAL CHARACTERISTICS
(1) READ CYCLE
PARAMETER
Read Cycle Time
Address Access Time
Chip Enable Access Time
Output Enable Access Time
Chip Enable to Output in Low-Z
Output Enable to Output in Low-Z
Chip Disable to Output in High-Z
Output Disable to Output in High-Z
Output Hold from Address Change
SYM.
tRC
tAA
tACE
tOE
tCLZ*
tOLZ*
tCHZ*
tOHZ*
tOH
AS7C34096B-10
UNIT
MIN.
MAX.
10
ns
10
ns
10
ns
4.5
ns
2
ns
0
ns
4
ns
4
ns
2
ns
(2) WRITE CYCLE
PARAMETER
Write Cycle Time
Address Valid to End of Write
Chip Enable to End of Write
Address Set-up Time
Write Pulse Width
Write Recovery Time
Data to Write Time Overlap
Data Hold from End of Write Time
Output Active from End of Write
Write to Output in High-Z
SYM.
tWC
tAW
tCW
tAS
tWP
tWR
tDW
tDH
tOW *
tWHZ*
AS7C34096B-10
MIN.
MAX.
10
8
8
0
8
0
6
0
2
4
UNIT
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
*These parameters are guaranteed by device characterization, but not production tested.
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Rev 1.1 Sep 2017
AS7C34096B-10TIN
AS7C34096B-10BIN
TIMING WAVEFORMS
READ CYCLE 1 (Address Controlled) (1,2)
tRC
Address
tAA
Dout
tOH
Previous Data Valid
Data Valid
READ CYCLE 2 (CE# and OE# Controlled) (1,3,4,5)
tRC
Address
tAA
CE#
tACE
OE#
tOE
tOH
tOHZ
tCHZ
tOLZ
tCLZ
Dout
High-Z
Data Valid
High-Z
Notes :
1.WE# is high for read cycle.
2.Device is continuously selected OE# = low, CE# = low.
3.Address must be valid prior to or coincident with CE# = low,; otherwise tAA is the limiting parameter.
4.tCLZ, tOLZ, tCHZ and tOHZ are specified with CL = 5pF. Transition is measured ±500mV from steady state.
5.At any given temperature and voltage condition, tCHZ is less than tCLZ , tOHZ is less than tOLZ.
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Rev 1.1 Sep 2017
AS7C34096B-10TIN
AS7C34096B-10BIN
WRITE CYCLE 1 (WE# Controlled) (1,2,4,5)
tWC
Address
tAW
CE#
tCW
tAS
tWP
tWR
WE#
tWHZ
Dout
TOW
High-Z
(4)
tDW
Din
(4)
tDH
Data Valid
WRITE CYCLE 2 (CE# Controlled) (1,4,5)
tWC
Address
tAW
CE#
tAS
tWR
tCW
tWP
WE#
tWHZ
Dout
High-Z
(4)
tDW
Din
tDH
Data Valid
Notes :
1.A write occurs during the overlap of a low CE#, low WE#.
2.During a WE# controlled write cycle with OE# low, tWP must be greater than tWHZ + tDW to allow the drivers to turn off and data to be
placed on the bus.
3.During this period, I/O pins are in the output state, and input signals must not be applied.
4.If the CE# low transition occurs simultaneously with or after WE# low transition, the outputs remain in a high impedance state.
5.tOW and tWHZ are specified with CL = 5pF. Transition is measured ±500mV from steady state.
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Rev 1.1 Sep 2017
AS7C34096B-10TIN
AS7C34096B-10BIN
DATA RETENTION CHARACTERISTICS
PARAMETER
VCC for Data Retention
Data Retention Current
Chip Disable to Data
Retention Time
Recovery Time
tRC* = Read Cycle Time
SYMBOL TEST CONDITION
VDR
CE# ≧ VCC - 0.2V
VCC = 1.5V
IDR
CE# ≧ VCC - 0.2V
Others at 0.2V or Vcc – 0.2V
See Data Retention
tCDR
Waveforms (below)
tR
MIN.
1.5
TYP.
-
MAX.
3.6
UNIT
V
-
2
10
mA
0
-
-
ns
tRC*
-
-
ns
DATA RETENTION WAVEFORM
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Rev 1.1 Sep 2017
AS7C34096B-10TIN
AS7C34096B-10BIN
PACKAGE OUTLINE DIMENSION
44-pin 400mil TSOP-Ⅱ Package Outline Dimension
SYMBOLS
A
A1
A2
b
c
D
E
E1
e
L
ZD
y
Θ
Confidential
DIMENSIONS IN MILLMETERS
MIN.
NOM.
MAX.
1.20
0.05
0.10
0.15
0.95
1.00
1.05
0.30
0.45
0.12
0.21
18.212
18.415
18.618
11.506
11.760
12.014
9.957
10.160
10.363
0.800
0.40
0.50
0.60
0.805
0.076
3o
6o
0o
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DIMENSIONS IN MILS
MIN.
NOM.
MAX.
47.2
2.0
3.9
5.9
37.4
39.4
41.3
11.8
17.7
4.7
8.3
717
725
733
453
463
473
392
400
408
31.5
15.7
19.7
23.6
31.7
3
0o
3o
6o
Rev 1.1 Sep 2017
AS7C34096B-10TIN
AS7C34096B-10BIN
36 ball 6mm × 8mm TFBGA Package Outline Dimension
Confidential
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Rev 1.1 Sep 2017
AS7C34096B-10TIN
AS7C34096B-10BIN
PART NUMBERING SYSTEM
AS7C
SRAM
34096B
34096=512k x 8
B=B die
10
10=10ns
T/B
T = TSOPII
B=TFBGA
I
I=Industrial
(-40° C~+85° C)
N
Indicates Pb and
Halogen Free
Alliance Memory, Inc.
511 Taylor Way,
San Carlos, CA 94070
Tel: 650-610-6800
Fax: 650-620-9211
www.alliancememory.com
Copyright © Alliance Memory
All Rights Reserved
© Copyright 2007 Alliance Memory, Inc. All rights reserved. Our three-point logo, our name and Intelliwatt are
trademarks or registered trademarks of Alliance. All other brand and product names may be the trademarks of their
respective companies. Alliance reserves the right to make changes to this document and its products at any time
without notice. Alliance assumes no responsibility for any errors that may appear in this document. The data
contained herein represents Alliance's best data and/or estimates at the time of issuance. Alliance reserves the right
to change or correct this data at any time, without notice. If the product described herein is under development,
significant changes to these specifications are possible. The information in this product data sheet is intended to be
general descriptive information for potential customers and users, and is not intended to operate as, or provide, any
guarantee or warrantee to any user or customer. Alliance does not assume any responsibility or liability arising out of
the application or use of any product described herein, and disclaims any express or implied warranties related to the
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Rev 1.1 Sep 2017